Microchip Technology, Inc. Single IGBTs APT50GN120L2DQ2G

Description
IGBT NPT, Trench Field Stop 1200V 134A 543W Through Hole
Request a Quote Datasheet
Description
IGBT NPT, Trench Field Stop 1200V 134A 543W Through Hole
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - APT50GN120L2DQ2G-ND - DigiKey
Thief River Falls, MN, United States
IGBT NPT, Trench Field Stop 1200V 134A 543W Through Hole

IGBT NPT, Trench Field Stop 1200V 134A 543W Through Hole

Buy Now Datasheet
Singapore
1200V 134A 543W IGBT Transistor
279-APT50GN120L2DQ2G
1200V 134A 543W IGBT Transistor 279-APT50GN120L2DQ2G
IGBT 1200V 134A 543W TO264 Product overview: APT50GN120L2DQ2G from Microchip Technology is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 134A, 543W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 134A, 543W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-APT50GN120L2DQ2G can be used for catalog matching and distributor lookup.

IGBT 1200V 134A 543W TO264 Product overview: APT50GN120L2DQ2G from Microchip Technology is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 134A, 543W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 134A, 543W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-APT50GN120L2DQ2G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - Single - 1324938-APT50GN120L2DQ2G - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - IGBTs - Single
1324938-APT50GN120L2DQ2G
Discrete Semiconductor Products - Transistors - IGBTs - Single 1324938-APT50GN120L2DQ2G
Manufacturer: Microchip Technology Win Source Part Number: 1324938-APT50GN120L2 DQ2G Category: Discrete Semiconductor Products>Transistors - IGBTs - Single Packaging: Tube Standard Package: 25 Mounting: Through Hole Power - Max: 543 W IGBT Type: NPT, Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 134 A Current - Collector Pulsed (Icm): 150 A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Switching Energy: 4495µJ (off) Input Type: Standard Gate Charge: 315 nC Td (on/off) @ 25°C: 28ns/320ns Test Condition: 800V, 50A, 2.2Ohm, 15V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: TO-264-3, TO-264AA ECCN: EAR99 Fake Threat In the Open Market: 85 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Other Part Number: APT50GN120L2DQ2GMI-N D,APT50GN120L2DQ2GMI Base Product Number: APT50GN120 RoHS Status: RoHS Compliant

Manufacturer: Microchip Technology
Win Source Part Number: 1324938-APT50GN120L2DQ2G
Category: Discrete Semiconductor Products>Transistors - IGBTs - Single
Packaging: Tube
Standard Package: 25
Mounting: Through Hole
Power - Max: 543 W
IGBT Type: NPT, Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 134 A
Current - Collector Pulsed (Icm): 150 A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Switching Energy: 4495µJ (off)
Input Type: Standard
Gate Charge: 315 nC
Td (on/off) @ 25°C: 28ns/320ns
Test Condition: 800V, 50A, 2.2Ohm, 15V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: TO-264-3, TO-264AA
ECCN: EAR99
Fake Threat In the Open Market: 85
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: APT50GN120L2DQ2GMI-ND,APT50GN120L2DQ2GMI
Base Product Number: APT50GN120
RoHS Status: RoHS Compliant

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - APT50GN120L2DQ2G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
APT50GN120L2DQ2G
Discrete Semiconductor Products - Transistors - IGBTs APT50GN120L2DQ2G
IGBT 1200V 134A 543W TO264

IGBT 1200V 134A 543W TO264

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number APT50GN120L2DQ2G-ND 279-APT50GN120L2DQ2G 1324938-APT50GN120L2DQ2G APT50GN120L2DQ2G
Product Name Single IGBTs 1200V 134A 543W IGBT Transistor Discrete Semiconductor Products - Transistors - IGBTs - Single Discrete Semiconductor Products - Transistors - IGBTs
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-264-3, TO-264AA Tube SOT3; TO-264-3, TO-264AA
Packing Method Tube Tube Tube; Tube Tube; Tube
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