Microchip Technology, Inc. Power IGBT Transistor APT25GN120B2DQ2G

Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT's have a very short, low amplitude tail current and low Eoff. The Trench Gate design results in superior VCE(on) performance. Easy paralleling results from very tight parameter distribution and slightly positive VCE(on) temperature coefficient. Built-in gate resistance ensures ultra-reliable operation. Low gate charge simplifies gate drive design and minimizes losses.

IGBT 1200V 67A 272W TMAX Product overview: APT25GN120B2DQ2G from Microchip Technology is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 67A, 272W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 67A, 272W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-APT25GN120B2DQ2G can be used for catalog matching and distributor lookup.

IGBT NPT, Trench Field Stop 1200V 67A 272W Through Hole

Manufacturer: Microchip Technology
Win Source Part Number: 911633-APT25GN120B2DQ2G
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: IGBT NPT, Trench Field Stop 1200 V 67 A 272 W Through Hole
Package: Tube
Package: TO-247-3 Variant
Mounting: Through Hole
Family Name: APT25GN120
Categories: Discrete Semiconductor Products
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance
Quantity per package: 1
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 35 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: APT25GN120B2DQ2GMI, APT25GN120B2DQ2GMI-ND