DIODES Incorporated Single IGBTs DGTD65T15H2TF

Description
IGBT Field Stop 650V 30A 48W Through Hole ITO-220AB
Request a Quote Datasheet
Description
IGBT Field Stop 650V 30A 48W Through Hole ITO-220AB
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - DGTD65T15H2TFDI-ND - DigiKey
Thief River Falls, MN, United States
IGBT Field Stop 650V 30A 48W Through Hole ITO-220AB

IGBT Field Stop 650V 30A 48W Through Hole ITO-220AB

Buy Now Datasheet
Singapore, Singapore
IGBT Transistor
279-DGTD65T15H2TF
IGBT Transistor 279-DGTD65T15H2TF
IGBT600V-XITO-220AB Product overview: DGTD65T15H2TF from Diodes Incorporated is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-DGTD65T15H2TF can be used for catalog matching and distributor lookup.

IGBT600V-XITO-220AB Product overview: DGTD65T15H2TF from Diodes Incorporated is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-DGTD65T15H2TF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - Single - 1055484-DGTD65T15H2TF - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - IGBTs - Single
1055484-DGTD65T15H2TF
Discrete Semiconductor Products - Transistors - IGBTs - Single 1055484-DGTD65T15H2TF
Win Source Part Number: 1055484-DGTD65T15H2T F Category: Discrete Semiconductor Products>Transistors - IGBTs - Single Package: Tube Standard Package: 1,000 Power - Max: 48 W Reverse Recovery Time (trr): 150 ns IGBT Type: Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 30 A Current - Collector Pulsed (Icm): 60 A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A Switching Energy: 270µJ (on), 86µJ (off) Input Type: Standard Gate Charge: 61 nC Td (on/off) @ 25°C: 19ns/128ns Test Condition: 400V, 15A, 10Ohm, 15V Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Supplier Device Package: ITO-220AB Temperature Range - Operating: -40°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 59 pct. MSL Level: Not Applicable REACH Status: REACH Affected HTSUS: 8541.29.0095 Mfr: Diodes Incorporated Other Names: DGTD65T15H2TFDI Base Product Number: DGTD65

Win Source Part Number: 1055484-DGTD65T15H2TF
Category: Discrete Semiconductor Products>Transistors - IGBTs - Single
Package: Tube
Standard Package: 1,000
Power - Max: 48 W
Reverse Recovery Time (trr): 150 ns
IGBT Type: Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 30 A
Current - Collector Pulsed (Icm): 60 A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Switching Energy: 270µJ (on), 86µJ (off)
Input Type: Standard
Gate Charge: 61 nC
Td (on/off) @ 25°C: 19ns/128ns
Test Condition: 400V, 15A, 10Ohm, 15V
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AB
Temperature Range - Operating: -40°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 59 pct.
MSL Level: Not Applicable
REACH Status: REACH Affected
HTSUS: 8541.29.0095
Mfr: Diodes Incorporated
Other Names: DGTD65T15H2TFDI
Base Product Number: DGTD65

Buy Now Datasheet
Igbt, Single, 650V, 30A, Ito-220Ab Rohs Compliant Diodes Inc. - 28AK8339 - Newark, An Avnet Company
Chicago, IL, United States
Igbt, Single, 650V, 30A, Ito-220Ab Rohs Compliant Diodes Inc.
28AK8339
Igbt, Single, 650V, 30A, Ito-220Ab Rohs Compliant Diodes Inc. 28AK8339
IGBT, SINGLE, 650V, 30A, ITO-220AB ROHS COMPLIANT: YES

IGBT, SINGLE, 650V, 30A, ITO-220AB ROHS COMPLIANT: YES

Supplier's Site
Integrated Circuits (ICs) - Transistors - IGBTs - DGTD65T15H2TF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Transistors - IGBTs
DGTD65T15H2TF
Integrated Circuits (ICs) - Transistors - IGBTs DGTD65T15H2TF
Integrated Circuits (ICs) - Transistors - IGBTs

Integrated Circuits (ICs) - Transistors - IGBTs

Supplier's Site
Single IGBTs - DGTD65T15H2TF - ODG (Origin Data Global)
Shenzhen, China
Single IGBTs
DGTD65T15H2TF
Single IGBTs DGTD65T15H2TF
IGBT600V-XITO-220AB

IGBT600V-XITO-220AB

Supplier's Site Datasheet

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global)
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number DGTD65T15H2TFDI-ND 279-DGTD65T15H2TF 1055484-DGTD65T15H2TF 28AK8339 DGTD65T15H2TF DGTD65T15H2TF
Product Name Single IGBTs IGBT Transistor Discrete Semiconductor Products - Transistors - IGBTs - Single Igbt, Single, 650V, 30A, Ito-220Ab Rohs Compliant Diodes Inc. Integrated Circuits (ICs) - Transistors - IGBTs Single IGBTs
TJ -40 to 175 C (-40 to 347 F) -40 to 175 C (-40 to 347 F) -40 to 175 C (-40 to 347 F) -40 to 175 C (-40 to 347 F)
Package Type TO-220; TO-220-3 Full Pack, Isolated Tab Tube TO-220; SOT3 TO-3; TO-220 TO-220; TO-220-3 Full Pack, Isolated Tab
Packing Method Tube Tube
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