Infineon Technologies AG Single IGBTs AIKQB160N75CP2AKSA1

AIKQB160N75CP2 is a 750 V EDT2 IGBT with a 160 A continuous collector current rating, co-packed with a soft and fast recovery emitter-controlled diode, housed in a TO247PLUS package with 6.6 mm creepage distance and resistive weldable pins. It supports reflow soldering per JEDEC J-STD-020 (MSL2), has a typical collector-emitter saturation voltage of 1.4 V at 160 A and 25°C, and withstands short circuits for 5 µs at 470 V collector-emitter voltage. The device features a positive thermal coefficient, tight parameter distribution for easy paralleling, low gate charge, and qualifies for automotive applications per AEC-Q101. Thermal resistance from junction to case is 0.15-0.21 K/W for the IGBT and 0.28-0.36 K/W for the diode. Junction-to-ambient thermal resistance is 40 K/W, with an operating junction temperature of up to 175°C and a storage temperature range of -55°C to 150°C.