IGBT FIELD STOP 600V 120A TO247
IGBT Field Stop 600V 120A 378W Through Hole TO-247-3
IGBT, Field Stop, 600V, 60A, 450-TUBE Product overview: FGH60N60SFDTU from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 60A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 60A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGH60N60SFDTU can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001175-FGH60N60SFDTU
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 55ns
IGBT Type: Field Stop
Input Type: Standard
Gate Charge: 188nC
Family Name: FGH60N60SFD
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247
Maximum Current Collector: 120A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 378W
Pulsed Collector Current: 180A
Collector-emitter saturation voltage(Max): 2.9V @ 15V, 60A
Total Switching Energy(Ets): 1.97mJ (on), 570μJ (off)
Turn-on and Turn-off delay time: 26ns/134ns
Testing Conditions: 400V, 60A, 5 Ohm, 15V
Alternative Parts (Cross-Reference): FGH60N60SFDTU-F085 ; STGWA80H65DFB; STGW60H65DRF; STGW60V60DF;
Introduction Date: August 01, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance
IGBT FIELD STOP 600V 120A TO247
TO-247-3 IGBTs ROHS
IGBT Transistors N-Ch/ 60A 600V FS
| ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | FGH60N60SFDTU | FGH60N60SFDTU-ND | 279-FGH60N60SFDTU | 001175-FGH60N60SFDTU | FGH60N60SFDTU | FGH60N60SFDTU | FGH60N60SFDTU |
| Product Name | Single IGBTs | Single IGBTs | 600V 60A IGBT Transistor | IGBTs - Single - FGH60N60SFDTU | Discrete Semiconductor Products - Transistors - IGBTs | Triode/MOS Tube/Transistor >> IGBTs | IGBT Transistors |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | |||
| Package Type | TO-247; TO-247-3 | TO-247; TO-247-3 | TO-247; SOT3; TO-247 | TO-247 | |||
| Packing Method | Tube | Rail; Tube; Tube/Rail | Tube; Tube |