Richardson RFPD Datasheets for RF Amplifiers
RF amplifiers are devices that accept a varying input signal and produce an output signal that varies in the same way, but with larger amplitude.
RF Amplifiers: Learn more
| Product Name | Notes |
|---|---|
| 0.1–1.0 GHz LOW NOISE WIDE BAND AMPLIFIER. WBA0110A integrates WanTcom proprietary low noise amplifier technology, high frequency micro electronic assembly techniques, and high reliability design to realize optimum low noise... | |
| 0.1-2.1 GHz LOW NOISE WIDE BAND AMPLIFIER. WBA0121A integrates WanTcom proprietary low noise amplifier technology, high frequency micro electronic assembly techniques, and high reliability design to realize optimum low noise... | |
| 0.10–1.0 GHz LOW NOISE WIDE BAND AMPLIFIER. WBA0110B integrates WanTcom proprietary low noise amplifier technology, high frequency micro electronic assembly techniques, and high reliability design to realize optimum low noise... | |
| 0.2- 0.65 GHz LOW NOISE WIDE BAND AMPLIFIER. WBA0205A integrates WanTcom proprietary low noise amplifier technology, high frequency micro electronic assembly techniques, and high reliability design to realize optimum low... | |
| 0.2-4.2 GHz LOW NOISE WIDE BAND AMPLIFIER. WBA0145A integrates WanTcom proprietary low noise amplifier technology, high frequency micro electronic assembly techniques, and high reliability design to realize optimum low noise... | |
| 0.2-8.2 GHz LOW NOISE WIDE BAND AMPLIFIER. WBA0180A integrates WanTcom proprietary low noise amplifier technology, high frequency micro electronic assembly techniques, and high reliability design to realize optimum low noise... | |
| 0.35- 2.0 GHz LOW NOISE WIDE BAND AMPLIFIER. WBA0320A integrates WanTcom proprietary low noise amplifier technology, high frequency micro electronic assembly techniques, and high reliability design to realize optimum low... | |
| 0.5 – 2.8 GHz LOW NOISE WIDE BAND AMPLIFIER. WBA0530A integrates WanTcom proprietary power amplifier technology, high frequency micro electronic assembly techniques, and high reliability design to realize optimum low... | |
| 0.5 - 1.25 GHz LOW NOISE WIDE BAND AMPLIFIER. WBA0512AS integrates WanTcom proprietary low noise amplifier technology, high frequency micro electronic assembly techniques, and high reliability design to realize optimum... | |
| 0.5- 1.25 GHz SUPER LOW NOISE AMPLIFIER WBA0512AS. WBA0512AS is a super low noise figure, wideband, and high linearity amplifier. The amplifier offers typical 0.40 dB noise figure, +/-0.25 dB... | |
| 0.5- 2.0 GHz LOW NOISE WIDE BAND AMPLIFIER. WBA0520-45A integrates WanTcom proprietary low noise amplifier technology, high frequency micro electronic assembly techniques, and high reliability design to realize optimum low... | |
| 0.5- 2.0 GHz LOW NOISE WIDE BAND AMPLIFIER. WBA0520B integrates WanTcom proprietary low noise amplifier technology, high frequency micro electronic assembly techniques, and high reliability design to realize optimum low... | |
| 0.5- 2.1 GHz LOW NOISE WIDE BAND AMPLIFIER. WBA0520P integrates WanTcom proprietary low noise amplifier technology, high frequency micro electronic assembly techniques, and high reliability design to realize optimum low... | |
| 0.8- 2.2 GHz LOW NOISE AMPLIFIER WBA0822A. WBA0822A is a low noise figure, wideband, and high linearity amplifier. The amplifier offers typical 0.80 dB noise figure, +/- 0.25 dB exceptional... | |
| 0.90- 1.70 GHz LOW NOISE WIDE BAND AMPLIFIER. WBA0918A integrates WanTcom proprietary low noise amplifier technology, high frequency micro electronic assembly techniques, and high reliability design to realize optimum low... | |
| 1 – 3000 MHz LOW NOISE WIDE BAND AMPLIFIER. WBA0030-30A integrates WanTcom proprietary low noise amplifier technology, high frequency micro electronic assembly techniques, and high reliability design to realize optimum... | |
| 1 to 75 GHz Distributed Amplifier (DA) | |
| 1 to 80 GHz Distributed Amplifier (DA) | |
| 1.0 – 4.0 GHz LOW NOISE WIDE BAND AMPLIFIER. WBA1040A integrates WanTcom proprietary low noise amplifier technology, high frequency micro electronic assembly techniques, and high reliability design to realize optimum... | |
| 1.2 - 1.6 GHz SUPER LOW NOISE AMPLIFIER. WBA1216A integrates WanTcom proprietary low noise amplifier technology, high frequency micro electronic assembly techniques, and high reliability design to realize optimum low... | |
| 1.2- 2.4 GHz SUPER LOW NOISE AMPLIFIER. WBA1225A integrates WanTcom proprietary low noise amplifier technology, high frequency micro electronic assembly techniques, and high reliability design to realize optimum low noise... | |
| 1.2-1.6 GHz SUPER LOW NOISE AMPLIFIER. WBA1216A integrates WanTcom proprietary low noise amplifier technology, high frequency micro electronic assembly techniques, and high reliability design to realize optimum low noise figure,... | |
| 1.7 – 2.2 GHz LOW NOISE AMPLIFIER WBA1722A. WBA1722A LNA is a supper low noise figure, wideband, and high linearity connectorized amplifier with unconditional stable design. The amplifier offers typical... | |
| 1.7- 2.2 GHz LOW NOISE WIDE BAND AMPLIFIER. WBA1722A integrates WanTcom proprietary low noise amplifier technology, high frequency micro electronic assembly techniques, and high reliability design to realize optimum low... | |
| 1.7-2.5 GHz LOW NOISE WIDE BAND AMPLIFIER. WBA1725A integrates WanTcom proprietary low noise amplifier technology, high frequency micro electronic assembly techniques, and high reliability design to realize optimum low noise... | |
| 10 -3000 MHz Low Noise Wide Band Amplifier. Applications used in are Mobile Infrastructures, GPS, CATV/DBS, Defense, PCS &3G, Measurement and Fixed Wireless. ; SMA connectorized WP-6 Gold plated housing. | |
| 10 W Power Amplifier 2 - 6 GHz. The MAAP-010169 is a two stage MMIC power amplifier designed for broadband high power applications. It can be used as either a... | |
| 100KHz- 1.6 GHz LOW NOISE WIDE BAND AMPLIFIER. WBA0016A integrates WanTcom proprietary low noise amplifier technology, high frequency micro electronic assembly techniques, and high reliability design to realize optimum low... | |
| 130–180 MHz LOW NOISE WIDE BAND AMPLIFIER. WBA0102A integrates WanTcom proprietary low noise amplifier technology, high frequency micro electronic assembly techniques, and high reliability design to realize optimum low noise... | |
| 1400-3000 MHz LOW NOISE POWER AMPLIFIER WBA1530A. WBA1530A LNA is a low noise figure, wideband, and high linearity power amplifiers with unconditional stable design. The amplifier offers typical noise figure... | |
| 150–450 MHz Low Noise Wide Band Amplifier. WBA0104R is integrated with WanTcom proprietary low noise amplifier technology, high frequency micro electronic assembly techniques, and high reliability design to realize optimum... | |
| 17.3 to 21.2 GHz High Efficiency Power Amplifier, 1W | |
| 1700- 3000 MHz LOW NOISE AMPLIFIER WBA1730-40A. WBA1730-40A LNA is a low noise figure, wideband, and high linearity amplifier with unconditional stable design. The amplifier offers 0.80 dB typical noise... | |
| 2 Watt InGaP HBT Power Amplifier ISM 800–1000 MHz Band | |
| 2-16 GHz, Power-Selectable Wideband Amplifier. MMA017AA is a general purpose wideband amplifier for applications across 2-16 GHz. Four different output power levels can be achieved by selecting different bonding options. | |
| 2-22 GHz, 12.5 dB Gain Low-Noise Wideband Distributed Amplifier. MMA005AA is a general purpose wideband distributed amplifier for applications across 2-22 GHz. Gain flatness is +/-0.75 dB and noise figure... | |
| 2-6 GHz Low Noise Wide Band Amplifier. WBA2060-30A integrates WanTcom proprietary low noise amplifier technology, high frequency micro electronic assembly techniques, and high reliability design to realize optimum low noise... | |
| 2.0 – 3.0 GHz High Linearity, Active Bias Low-Noise Amplifier | |
| 2.0 – 6.0 GHz LOW NOISE WIDE BAND AMPLIFIER. WBA2060-40A integrates WanTcom proprietary low noise amplifier technology, high frequency micro electronic assembly techniques, and high reliability design to realize optimum... | |
| 2.0 - 2.6 GHz LOW NOISE WIDE BAND AMPLIFIER. WBA2026A integrates WanTcom proprietary low noise amplifier technology, high frequency micro electronic assembly techniques, and high reliability design to realize optimum... | |
| 2.0- 2.6 GHz LOW NOISE WIDE BAND AMPLIFIER. WBA2026A integrates WanTcom proprietary low noise amplifier technology, high frequency micro electronic assembly techniques, and high reliability design to realize optimum low... | |
| 2.4 GHz High Power Wireless LAN Power Amplifier | |
| 2.4 GHz Power Amplifier with Power Detector | |
| 2.4–2.5 GHz WLAN/Zigbee® Power Amplifier | |
| 20 – 3000 MHz LOW NOISE WIDE BAND AMPLIFIER. WBA0030A integrates WanTcom proprietary low noise amplifier technology, high frequency micro electronic assembly techniques, and high reliability design to realize optimum... | |
| 20 - 3000 MHz LOW NOISE POWER AMPLIFIER WBA0030A. WBA0030A is a low noise figure, wideband, and high linearity power amplifier with unconditional stable design. The amplifier offers typical 3.0... | |
| 22 to 28 GHz Power Amplifier | |
| 22 to 30 GHz GaN Driver Amplifier | |
| 22-26 GHz Low Noise Driver | |
| 23 to 28 GHz Power Amplifier | |
| 24 to 29 GHz Power Amplifier | |
| 24 to 30 GHz Power Amplifier in a 6x6 package | |
| 24 to 30 GHz Power Amplifier on 0.15mm CuMoCu Tab with DC bypass Capacitors | |
| 24 to 30 GHz Power Amplifier | |
| 24-31 GHz Low Noise Amplifier | |
| 24-31 GHz Power Amplifier | |
| 24.5 to 29 GHz High Power Amplifier on 0.15mm CuMoCu Tab with DC bypass Capacitors | |
| 24.5 to 29 GHz High Power Amplifier | |
| 25 to 29.5 GHz High Power Amplifier | |
| 26 to 29.5 GHz High Power Amplifier | |
| 26.5 to 31.5 GHz Power Amplifier | |
| 27 to 31 GHz Power Amplifier in 11x17 Flange Mount Package | |
| 27 to 31 GHz Power Amplifier on 0.15mm CuMoCu Tab with DC bypass Capacitors | |
| 27 to 31 GHz Power Amplifier | |
| 3 to 16 GHz ADC Interface High Linearity Quasi Differential Amplifier (TMC160D+TMC810-1D) | |
| 3 to 16 GHz ADC Interface High Linearity Quasi Differential Amplifier | |
| 3 to 16 GHz DAC Interface High Linearity Quasi Differential Amplifier (TMC160D+TMC810-1D) | |
| 3 to 16 GHz DAC Interface High Linearity Quasi Differential Amplifier | |
| 3 to 16 GHz Dual-Channel DAC Interface High Linearity Quasi Differential Amplifier ( 2xTMC160D+2xTMC810-1 D) | |
| 3 to 16 GHz Dual-ChannelADC Interface High Linearity Quasi Differential Amplifier ( 2xTMC160D+2xTMC810-1 D) | |
| 32Gb/s Broadband 3V Driver Amplifier. The UAS3LK is a small, single channel, two stage, high-performance broadband 32 Gb/s amplifier with low jitter, 3V amplitude and 20dB gain. Integrated bias-Ts decouple... | |
| 36 to 41 GHz Power Amplifier | |
| 37-43 GHz Low Noise Amplifier | |
| 37-43 GHz Power Amplifier | |
| 5 GHz, 26dBm Power Amplifier with Power Detector | |
| 5-18 GHz Surface Mount Amplifier with Integrated Bias. The UA5M15MP is a two-stage pHEMT amplifier MMIC in a Pb-free leadless plastic QFN package. The IC features a positive gain slope... | |
| 5-20 GHz, 20 dBm P3dB, 18 dB Gain Wideband Amplifier. MMA002AA is a wideband medium power amplifier with 18 dB gain and positive gain slope. The amplifier has... | |
| 5-20GHz MMIC Amplifier with Integrated Bias. The MMA021AA is a two-stage PHEMT high gain amplifier designed to be insensitive to process or temperature changes. Its high isolation makes it ideal... | |
| 6-18 GHz, 21.5 dB Gain, 1.5 dB NF Low Noise Amplifier. MMA004AA is a wideband amplifier with an excellent combination of bandwidth, low-noise and high associated gain. The gain flatness... | |
| DC to 120 GHz Distributed Amplifier (DA) | |
| DC to 160 GHz Distributed Amplifier (DA) | |
| DC to 180 GHz Distributed Amplifier (DA) | |
| DC to 26.5 GHz Driver Amplifier in Overmold 5x5 QFN | |
| DC to 26.5 GHz Driver Amplifier | |
| DC to 26.5 GHz Power Amplifier in Overmold 5x5 QFN | |
| DC to 26.5 GHz Power Amplifier | |
| DC to 30GHz Broadband MMIC Low-Noise Amplifier. The MMA022AA is an eight stage traveling wave amplifier. The amplifier has been designed for low noise, flat gain, and good return loss... | |
| DC to 30GHz Broadband MMIC Low-Noise Amplifier. The MMA025AA is an eight stage traveling wave amplifier. The amplifier has been designed for low noise, flat gain, and good return loss... | |
| DC to 30GHz Broadband MMIC Low-Noise Amplifier. The MMA026AA is an eight stage traveling wave amplifier. The amplifier has been designed for flat gain, excellent return loss, and medium power. | |
| DC to 30GHz Broadband MMIC Low-Power Amplifier. The MMA027AA is a seven stage traveling wave amplifier. The amplifier has been designed for low power dissipation, high drain efficiency, and low... | |
| DC to 30GHz Broadband MMIC Medium-Power Amplifier. The MMA023AA is an eight stage traveling wave amplifier. The amplifier has been designed for power, flat gain, and good return loss to... | |
| DC to 30GHz Broadband MMIC Medium-Power Amplifier. The MMA024AA is an eight stage traveling wave amplifier. The amplifier has been designed for high output power, excellent return loss, and high... | |
| DC to 45GHz Broadband MMIC Low-Noise Amplifier. The MMA030AA is a seven stage traveling wave amplifier. The amplifier features Microsemi PLFX (Passive Low Frequency eXtension) circuitry designed to reduce the... | |
| DC to 55 GHz Low Noise Distributed Amplifier (DA) | |
| DC to 60 GHz Low Noise Distributed Amplifier (DA) | |
| DC to 65GHz Broadband MMIC Amplifier with PLFX. The MMA0035AA is an eight stage traveling wave amplifier. The amplifier features Microsemi PLFX (Passive Low Frequency eXtension) circuitry designed to reduce... | |
| DC to 65GHz Broadband MMIC Low-Noise Amplifier with PLFX. The MMA036AA is a seven stage traveling wave amplifier. The amplifier features Microsemi PLFX (Passive Low Frequency eXtension) circuitry designed to... | |
| DC to 65GHz Broadband MMIC Medium-Power Amplifier with PLFX. The MMA034AA is an eight stage traveling wave amplifier. The amplifier features Microsemi PLFX (Passive Low Frequency eXtension) circuitry designed to... | |
| DC to 75 GHz Distributed Amplifier (DA) | |
| DC to 80 GHz Distributed Amplifier (DA) | |
| DC-14 GHz, Power-Selectable Wideband Amplifier. MMA015AA is a general purpose wideband amplifier for applications across DC-14 GHz. Four different output power levels can be achieved by selecting different bonding options. | |
| DC-20 GHz High Linearity Amplifier in Overmold 5x5 QFN | |
| DC-20 GHz High Linearity Amplifier | |
| DC-20 GHz Low Noise Amplifier in Overmold 5x5 QFN | |
| DC-20 GHz Low Noise Amplifier | |
| Driver or Pre--driver Amplifier for Doherty Power Amplifiers. The MMG20241H is a 1/4 W high gain amplifier designed as a driver or pre--driver for Doherty power amplifiers in wireless infrastructure... | |
| Enhancement Mode pHEMT Technology (E-pHEMT). High Linearity Amplifier. The MMG1524H is a high dynamic range, low noise amplifier MMIC, housed in a SOT-89 standard plastic package. It is ideal for... | |
| Heterojunction Bipolar Transistor (InGaP HBT) Broadband High Linearity Amplifier. The MMG3H21NT1 is a General Purpose Amplifier that is internally input matched and internally output matched. It is designed for a... | |
| Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier. The MMZ09312B is a 2-stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in... | |
| InGaP Cascadable Amplifier 0.1–6 GHz | |
| InGaP Cascadable Amplifier LF–12 GHz | |
| InGaP Cascadable Amplifier LF–3 GHz | |
| Linear Power Amplifier Driver, 1 W 400-2300 MHz | |
| MAAM-011286-DIE is an easy-to-use, wideband amplifier that operates from 30 kHz to 44 GHz. The amplifier provides 16 dB gain, 22 dBm output power and 5.3 dB noise figure. It... | |
| MAAM26100 is a GaAs MMIC two stage high efficiency power amplifier. The MAAM26100 is a fully monolithic design which eliminates the need for external circuitry in 50-ohm systems. The MAAM26100... | |
| MAAM26100-B1 is a GaAs MMIC two stage high efficiency power amplifier in a small, lead-free, 7-lead ceramic package. The MAAM26100-B1 is a fully monolithic design which eliminates the need for... | |
| MAAM26100-P1 is a GaAs MMIC two stage high efficiency power amplifier in a lead-free high performance bolt down ceramic package. The MAAM26100-P1 is a fully monolithic design which eliminates the... | |
| MAAM71100 is a GaAs MMIC two stage high efficiency power amplifier. The MAAM71100 is a fully monolithic design for operation in 50-ohm systems, with an on-chip negative bias network which... | |
| MACOM’s MAAM02350-A2 is a wide band, MMIC amplifier housed in a small, lead-free, 8-lead ceramic package. It includes two integrated gain stages and employs resistive feedback to obtain flat gain... | |
| MACOM’s MAAM28000 is a wide band, MMIC amplifier. It includes two distributed gain stages to obtain flat gain and a good, 50-ohm input and output impedance match over a very... | |
| MACOM's MAAM12000-A1 is a wide band, low noise, MMIC amplifier housed in a lead-free, small 8-lead ceramic package. It includes two integrated gain stages and employs series inductive feedback to... | |
| MACOM's MAAM28000-A1 is a wide band, MMIC amplifier housed in a small, lead-free, 8-lead ceramic package. It includes two distributed gain stages to obtain flat gain and a good, 50-ohm... | |
| MACOM's MAAM37000 die is a wide-band, low noise, MMIC amplifier. It includes two integrated gain stages and employs series inductive feedback to obtain excellent noise figure and a good 50-ohm,... | |
| MACOM's MAAM37000-A1 is a wide-band, low noise, MMIC amplifier housed in a small, lead-free, 8-lead ceramic package. It includes two integrated gain stages and employs series inductive feedback to obtain... | |
| MACOM's MAAM71200 die is a wide-band, low noise, MMIC amplifier. It includes two integrated gain stages and employs series inductive feedback to obtain excellent noise figure and a good, 50-ohm,... | |
| MACOM's MAAM71200-H1 is a wide band, low noise GaAs MMIC amplifier enclosed in a leadless ceramic package. The MAAM71200-H1 is a packaged version of MACOM's MAAM71200 low noise MMIC amplifier... | |
| MACOM's MAAMSS0001 is a GaAs PHEMT MMIC amplifier in a surface mount SOICN - 16 package. The MMIC design is configured as a pair of cascade PHEMT amplifiers for broadband... | |
| MACOM's MAAMSS0044 is a GaAs PHEMT MMIC amplifier in a lead-free 4 mm 20-lead PQFN package. The MMIC design is configured as a pair of cascade PHEMT amplifiers for broadband... | |
| Microwave amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This single stage PHEMT feedback amplifier design displays impressive performance characteristics... | |
| Microwave amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This two stage GaAs FET feedback amplifier design displays impressive performance... | |
| MMA040AA is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high-electron mobility transistor (pHEMT) low-noise distributed amplifier die that operates between DC and 28 GHz. The amplifier provides... | |
| MMA040PP5 is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high-electron-mobili ty transistor (pHEMT) low-noise distributed amplifier in a leadless 5 mm × 5 mm surface-mount package that... | |
| MMA041AA is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high-electron mobility transistor (pHEMT) distributed amplifier die that operates between DC and 26 GHz. It is ideal for... | |
| MMA041PP5 is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high-electron-mobili ty transistor (pHEMT) distributed amplifier in a leadless 5 mm × 5 mm surface-mount package that operates... | |
| MMA042AA is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high-electron mobility transistor (pHEMT) distributed amplifier die that operates between 2 GHz and 26 GHz. It is ideal... | |
| MMA042PP4 is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high-electron mobility transistor (pHEMT) distributed amplifier that operates between 2 GHz and 26 GHz. It is ideal for... | |
| MMA051PP45 is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high-electron-mobili ty transistor (pHEMT) distributed amplifier that operates between DC and 22 GHz. It is ideal for test... | |
| MMA052AA is a self-biased gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high-electron-mobili ty transistor (pHEMT) distributed amplifier in die form that operates between DC and 26 GHz. It... | |
| MMA052PP45 is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high-electron-mobili ty transistor (pHEMT) distributed self-biased amplifier in plastic package form that operates between DC and 24GHz. It... | |
| MMA053AA is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pHEMT distributed power amplifier die that operates between DC and 8 GHz. The amplifier provides 17 dB of gain,... | |
| MMA053PP5 is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pHEMT distributed power amplifier that operates between DC and 10 GHz. The plastic packaged amplifier provides 17 dB of... | |
| MMA155PP5 is a broadband, Gallium Arsenide (GaAs), pseudomorphic high-electron-mobili ty transistors (PHEMT), Monolithic Microwave Integrated Circuit (MMIC) Distributed Amplifier operating from DC to 16 GHz. It is ideal for test... | |
| OM8443-22 is a hybrid multimode multiband (MMMB) Power Amplifier Module (PAM) that supports 3G/4G handsets and operates efficiently in CDMA, WCDMA, TD-SCDMA, and LTE modes. The module is fully programmable... | |
| OM8443-62 is a hybrid multimode multiband (MMMB) Power Amplifier Module (PAM) that supports 3G/4G handsetsand operates efficiently in CDMA, WCDMA, TD-SCDMA, and LTE modes. The module is fully programmable through... | |
| OM9902-11 is a Phase 5N Power Amplifier Module (PAM) that supports 3G/4G/5G NR handsets and operates efficiently in CDMA, WCDMA, TD-SCDMA, and LTE/NR modes. The module is fully programmable through... | |
| Power Amplifier, 12 W, 8.5 - 11.5 GHz. The MAAP-015035 is a three stage 8.5 - 11.5 GHz GaAs pHEMT MMIC power amplifier capable of achieving a saturated pulsed output... | |
| Power Amplifier, 13 W, 8.5 - 11.75 GHz. The MAAP-015030 two stage 8.5 - 11.75 GHz GaAs MMIC power amplifier has a saturated pulsed output power of 41 dBm and... | |
| Power Amplifier, 15 W, 8.5 - 10.5 GHz. The MAAP-015036 is a two stage GaAs MMIC power amplifier operating from 8.5 - 10.5 GHz, with a saturated pulsed output power... | |
| Power Amplifier, 4 W. The MAAP-011139-DIE is a 4-stage, 4 W power amplifier in bare die form. This power amplifier operates from 29 to 31 GHz and provides 24 dB... | |
| Power Amplifier, 71 - 86 GHz. The MAAP-011106 is a bare die power amplifier that operates from 71 - 86 GHz. The amplifier provides 20 dB small signal gain. The... | |
| RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. The 2 stage silicon bipolar feedback amplifier design displays impressive performance... | |
| RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This feedback amplifier design uses 2 GaAs FET transistors In parallel,... | |
| RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This push-pull cascade design offers the benefits of low noise figure... | |
| RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This single stage bipolar transistor feedback amplifier design displays impressive performance... | |
| RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This single stage GaAs FET feedback amplifier design displays impressive performance... | |
| RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for consistent performance and high reliability. This 2 stage bipolar transistor feedback amplifier design displays impressive performance... | |
| RF amplifier is a discrete thin film hybrid design, which incorporates the use of thin film manufacturing processes for accurate performance an high reliability. This single stage bipolar transistor feedback... | |
| RF amplifier is a discrete thin film hybrid design, which incorporates the use of thin film manufacturing processes for accurate performance and high reliability. This single stage bipolar transistor feedback... | |
| RF LDMOS Wideband Integrated Power Amplifier. The MD8IC925N wideband integrated circuit is designed with on−chip matching that makes it usable from 728 to 960 MHz. This multi−stage structure is rated... | |
| RF LDMOS Wideband Integrated Power Amplifier. The MW7IC915N wideband integrated circuit is designed with on- chip matching that makes it usable from 698 to 960 MHz. This multi- stage structure... | |
| Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the... | |
| SKY65162-70LF: 400-2700 MHz Linear Power Amplifier. Skyworks SKY65162-70LF is a high performance, ultra-wideband Power Amplifier (PA) with superior output power, low noise, high linearity, and high efficiency. The device provides... | |
| SKY66295-11 is a high-efficiency fully input/output matched power amplifier (PA) with high gain and linearity. The compact 5 x 5 mm PA is designed for FDD and TDD 2G/3G/4G LTE... | |
| SKY67150-396LF: 300 to 2200 MHz Ultra Low-Noise Amplifier. The SKY67150-396LF is GaAs, pHEMT Low-Noise Amplifier (LNA) with an active bias, high linearity, superior gain, and industryleading Noise Figure (NF) performance. | |
| SKY67153-396LF: 0.7 to 3.8 GHz Ultra Low-Noise Amplifier. The SKY67153-396LF is GaAs, pHEMT Low-Noise Amplifier (LNA) with an active bias, high linearity, superior gain, and industry leading Noise Figure (NF)... | |
| Skyworks SKY65095-360LF is a high performance, ultra-wideband Power Amplifier (PA) driver with superior output power, low noise, and linearity. The device provides excellent Noise Figure (NF) and high output power... | |
| Skyworks SKY65173-70LF is a high performance, wideband, lownoise, highly linear Power Amplifier (PA) driver. The device provides a 2.6 dB Noise Figure (NF) and an output power at 1 dB... | |
| The A70-1 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance an high reliability. This single stage bipolar transistor feedback amplifier design displays... | |
| The A70-2 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This single stage bipolar transistor feedback amplifier design displays... | |
| The A70-3 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This single stage bipolar transistor feedback amplifier design displays... | |
| The A74 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for consistent performance and high reliability. This 2 stage bipolar transistor feedback amplifier design displays... | |
| The A75 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This single stage bipolar transistor feedback amplifier design displays... | |
| The A75-3 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This single stage bipolar transistor feedback amplifier design displays... | |
| The A76 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for consistent performance and high reliability. This 2 stage bipolar transistor feedback amplifier design displays... | |
| The A76-1 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for consistent performance and high reliability. This 2 stage bipolar transistor feedback amplifier design displays... | |
| The A77 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. The single stage bipolar transistor feedback amplifier design displays... | |
| The A78 RF amplifier is a discrete thin film hybrid design, which incorporates the use of thin film manufacturing processes for accurate performance and high reliability. This single stage bipolar... | |
| The A79 RF amplifier is a discrete thin film hybrid design, which incorporates the use of thin film manufacturing processes for accurate performance and high reliability. This single stage bipolar... | |
| The A80 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. The 2 stage silicon bipolar feedback amplifier design displays... | |
| The A81 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. The 2 stage silicon bipolar feedback amplifier design displays... | |
| The A81-1 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. The 2 stage silicon bipolar feedback amplifier design displays... | |
| The A81-2 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. The 2 stage silicon bipolar feedback amplifier design displays... | |
| The A82 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. The 2 stage silicon bipolar feedback amplifier design displays... | |
| The A87-1 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This single stage bipolar transistor feedback amplifier design displays... | |
| The A87-2 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This single stage bipolar transistor feedback amplifier design displays... | |
| The A88-1 RF amplifier is a discrete thin film hybrid design, which incorporates the use of thin film manufacturing processes for accurate performance and high reliability. This single stage bipolar... | |
| The AL7 limiting amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This design uses a Schottky diode limiter circuit at... | |
| The LA17 limiting amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This design uses a Schottky diode limiter circuit at... | |
| The LA7 limiting amplifier is a discrete hybrid design, which used thin film manufacturing processes for accurate performance and high reliability. This design uses a Schottky diode limiter circuit at... | |
| The MAAM-011139 is a driver amplifier assembled in a lead-free 4 mm 24-lead PQFN plastic package that operates from 27.5-33.4 GHz. The amplifier provides 21 dB small signal gain. The... | |
| The MAAM-011300 is an RF amplifier assembled ina SOT-89 plastic package. This amplifier provides17.5 dB of ultra flat gain while biased at either 5 or 8volts. The amplifier provides excellent... | |
| The MAAM-011324 is a wideband high linearity driver amplifier packaged in a compact 3 mm 16-Lead QFN package. This driver amplifier provides 17 dB gain and 26 dBm OP1dB with... | |
| The MAAM02350 is a wide band, MMIC amplifier. It includes two integrated gain stages and employs resistive feedBack to obtain flat gain and a good, 50 ohm input, and output... | |
| The MAAP-008516 is a three stage power amplifier, designed for WLAN applications. This power amplifier is available in a lead free 2.5 X 2 mm 14-Lead PQFN plastic package. The... | |
| The MAAP-008924 is a 3-stage, high linearity 1.2 W GaAs power amplifier in a 5mm, 20 lead PQFN package, allowing easy assembly. This PA product is fully matched to 50... | |
| The MAAP-010150 is a packaged linear power amplifier that operates over the range 10.0 - 15.35 GHz. The device typically provides 27 dB of gain and 42 dBm OIP3 with... | |
| The MAAP-010168 is a two stage MMIC power amplifier designed for broadband high power applications. It can be used as either a driver or an output stage amplifier. This device... | |
| The MAAP-010512 is a 4-stage, high linearity 1W power amplifier in a 7x7 mm laminate package, allowing easy assembly. This PA product is fully matched to 50 ohms on both... | |
| The MAAP-011145-STD is a power amplifier assembled in a 7 mm surface mount package with a temperature compensated integrated power detector operating from 17.65 to 19.75 GHz. The circuit provides... | |
| The MAAP-011146-STD is a power amplifier assembled in a 7 mm surface mount package with a temperature compensated integrated power detector operating from 21.15 to 23.65 GHz. The circuit provides... | |
| The MAAP-011199 is a balanced 3 stage GaAs pHEMT MMIC power amplifier. The device operates from 80 to 100 GHz and provides typically 24 dBm of output power. The power... | |
| The MAAP-011202 is a packaged linear power amplifier that operates from 12.7 - 15.4 GHz. The device provides 30 dB gain and 41 dBm OIP3 with 2 W typical output... | |
| The MAAP-011316 is a 2 W, 4-stage power amplifier assembled in a lead-free 5 mm 32-lead air cavity QFN plastic package. This power amplifier operates from 27.5 to 31 GHz... | |
| The MAAP-011319 is a 1/2 W Ka-band poweramplifier. The PA has a 26 dBm typical P1dB and a27 dBm typical P3dB with 24 dB of gain. The drainbias supply is... | |
| The MAAP-011324 is a 0.25 W distributed poweramplifier offered in a lead-free 5 mm 32-lead AQFNpackage. The power amplifier operates from DC to27 GHz and provides 18 dB of linear... | |
| The MAAP-011324-DIE is a 0.25 W distributedpower amplifier offered in bare die form. The poweramplifier operates from DC to 27 GHz and provides18 dB of linear gain and 26 dBm... | |
| The MAAP-011325-DIE is a 0.25 W distributed power amplifier offered in die form. The power amplifier operates from DC to 40 GHz and provides 11.5 dB of linear gain and... | |
| The MAAP-011340-DIE is a 1/4 W Ka-band amplifier. The amplifier has a 24 dBm typical P1dB and a 25 dBm typical P3dB with 24 dB of gain. The typical OIP3... | |
| The MAAP-011341 is a 1/2 W Ka-band poweramplifier. The PA has a 27 dBm typical P1dB and a28 dBm typical P3dB with 28 dB of gain. The drainbias supply is... | |
| The MAAP-011341-DIE is a 1/2 W Ka-band poweramplifier in bare die form. The power amplifier has a26.5 dBm typical P1dB and a 27.5 dBm typical P3dBwith 27 dB of gain. | |
| The MAAP-011358-DIE is a 4-stage, 6 W poweramplifier in bare die form. This power amplifieroperates from 27.5 to 30.0 GHz and provides 24 dBof linear gain, 6 W saturated output... | |
| The MAAP-015016-DIE is a wideband power amplifier operating from 32 to 38 GHz, with a saturated output power of 37 dBm, 23% PAE and small signal gain of 18 dB. | |
| The MAAP-018260 is a packaged linear power amplifier that operates over the frequency range 17.7 - 26.5 GHz. The device provides 27 dB of gain and 40 dBm OIP3 with... | |
| The MAAPSS0113 is a three stage power amplifier designed for Digitally Enhanced Cordless Telephone applications. The power amplifier is available in a lead-free 3 mm 12-lead PQFN plastic package. The... | |
| The MAMG-100227-010C0L is a broadband two-stage GaN-on-Si hybrid power amplifier module in an air-cavity laminate package. A gold-plated copper heat sink is attached to the bottom side of the laminate... | |
| The MHV5IC1810N wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 1990 MHz. This multi-stage structure is rated for 24 to 32 Volt operation... | |
| The MMA043AA is a gallium arsenide (GaAs) pseudomorphic high-electron mobility transistor (pHEMT) low-noise wideband amplifier die that operates between 0.5 GHz and 12 GHz. The MMA043AA die provides 16.5 dB... | |
| The MMA043PP4 is a gallium arsenide (GaAs) pseudomorphic high-electron-mobili ty transistor (pHEMT) low-noise wideband amplifier in a leadless 4 mm × 4 mm surface-mount package that operates between 0.5 GHz... | |
| The MMA044AA is a gallium arsenide (GaAs) pseudomorphic high-electron mobility transistor (pHEMT) monolithic microwave integrated circuit (MMIC) low-noise wideband amplifier die that operates between 6 GHz and 18 GHz. The... | |
| The MMA047PP4 is a Gallium Arsenide (GaAs), monolithic microwave integrated circuit (MMIC), Pseudomorphic High Electron Mobility Transistor (PHEMT), distributed amplifier operating from 4 to 14 GHz. Packaged in a fully... | |
| The MMG3014NT1 is a General Purpose Amplifier that is internally input matched and internally output prematched. It is designed for a broad range of Class A, small - signal, high... | |
| The MMG30301B is a 1 W high gain amplifier designed as a driver or pre-driver for Doherty power amplifiers in wireless infrastructure equipment operating in the 900 to 4300 MHz... | |
| The MMRF2010N is a 2-stage RFIC designed for IFF transponder applications operating from 1030 to 1090 MHz. These devices are suitable for use in pulse applications such as IFF and... | |
| The MMZ09332B is a 2-stage, high linearity InGaP HBT broadband amplifier designed for femtocell, picocell, smart grid, W-CDMA, TD--SCDMA and LTE wireless broadband applications. It provides exceptional linearity for LTE... | |
| The MMZ25333B is a versatile 3--stage power amplifier targeted at driver and pre--driver applications for macro and micro base stations and final--stage applications for small cells. Its versatile design allows... | |
| The MW6IC2240N wideband integrated circuit is designed with on-chip matching that makes it usable from 2110 to 2170 MHz. This multi-stage structure is rated for 26 to 32 Volt operation... | |
| The MW7IC2020N wideband integrated circuit is designed with on—chip matching that makes it usable from 1805 to 2170 MHz. This multi—stage structure is rated for 26 to 32 Volt operation... | |
| The OM9901-11 power amplifier module (PAM) is designed and optimized for 2G quad-band cellular handsets supporting user-optional control of linear RF or analog Vramp of the GMSK envelope. The low... | |
| The PA2010 power amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This Double stage GaAs FET feedback amplifier design displays... | |
| The PA2010 power amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This single stage GaAs FET feedback amplifier design displays... | |
| The PA38-2 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This two stage GaAs FET feedback amplifier design displays... | |
| The PA48 power amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This two stage GaAs FET feedback amplifier design displays... | |
| The PA511 RF amplifier is a discrete thin film hybrid design, which incorporates the use of thin film manufacturing processes for accurate performance and high reliability. This single stage bipolar... | |
| The PA512 0.5 watt RF power amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance an high reliability. This 2 stage GaAs FET transistor... | |
| The RA36 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for consistent performance and high reliability. This 3 stage bipolar transistor feedback amplifier design displays... | |
| The RA46 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This two stage GaAs FET feedback amplifier design displays... | |
| The RA62 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This two stage GaAs FET feedback amplifier design displays... | |
| The RA63-1 microwave amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This two stage GaAs FET feedback amplifier design displays... | |
| The RA66 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for consistent performance and high reliability. This 3 stage bipolar transistor feedback amplifier design displays... | |
| The RA69 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for consistent performance and high reliability. This 2 stage bipolar transistor feedback amplifier design displays... | |
| The RA89 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for consistent performance and high reliability. This two stage bipolar transistor feedback amplifier design displays... | |
| The RA89-1 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for consistent performance and high reliability. This 2 stage bipolar transistor feedback amplifier design displays... | |
| The SE2622L is a 2.4 GHz power amplifier designed for use in the 2.4 GHz ISM band for wireless LAN applications. The device incorporates a power detector for closed loop... | |
| The SKY66185-11 is a high-linearity power amplifier (PA) with fully matched input/output and high gain. The compact 5 x 5 mm PA is designed for FDD 3G/4G LTE small cell... | |
| The SKY66289-11 is a high-efficiency fully input/output matched power amplifier (PA) with high gain and linearity. The compact 5 x 5 mm PA is designed for FDD and TDD 2G/3G/4G... | |
| The SKY66292-11 is a high-efficiency fully input/output matched power amplifier (PA) with high gain and linearity. The compact 5 x 5 mm PA is designed for FDD and TDD 2G/3G/4G... | |
| The SKY66296-11 is a high-efficiency fully input/output matched power amplifier (PA) with high gain and linearity. The compact 5 x 5 mm PA is designed for FDD and TDD 2G/3G/4G... | |
| The SKY66318-21 is a highly efficient, wide instantaneous bandwidth, fully input/output matched power amplifier (PA) with high gain and linearity. The compact 5 x 5 mm PA is designed for... | |
| The SKY67021-396LF is GaAs, pHEMT Low-Noise Amplifier (LNA) with an active bias and high linearity performance. The advanced GaAs pHEMT enhancement mode process provides good return loss, low noise, and... | |
| The SKY67022-396LF is GaAs, pHEMT Low-Noise Amplifier (LNA) with an active bias and high linearity performance. The advanced GaAs pHEMT enhancement mode process provides good return loss, low noise, and... | |
| The SKY67023-396LF is GaAs, pHEMT Low-Noise Amplifier (LNA) with an active bias and high linearity performance. The advanced GaAs pHEMT enhancement mode process provides good return loss, low noise, and... | |
| The SKY67151-396LF is GaAs, pHEMT Low-Noise Amplifier (LNA) with an active bias, high linearity, superior gain, and industry-leading Noise Figure (NF) performance from 700 to 3800 MHz. The device features... | |
| The SKY67161-306LF is a GaAs pHEMT and HBT two-stage, Low-Noise Amplifier (LNA) with active bias and high linearity performance. The pHEMT front end of the device provides an ultra-low Noise... | |
| The SKY67181-396LF is a wide-band low-noise amplifier with superior gain flatness and exceptional linearity. The compact 2 x 2 mm, 8-pin Dual Flat No Lead packaged LNA is designed for... | |
| The SKY67183-396LF is a wide-band low-noise amplifier with superior gain flatness and exceptional linearity. The compact 2 x 2 mm, 8-pin Dual Flat No Lead packaged LNA is designed for... | |
| The SKY67189-396LF is a wide-band low-noise amplifier withsuperior gain flatness and exceptional linearity. The compact 2 x 2 mm, 8-pin Dual Flat No Lead packaged LNA is designed for 2G/3G/4G/5G... | |
| The SKY67226-11 LNA is comprised of a single stage high linearity, high gain low noise GaAs pHEMT amplifier integrated with all required matching components, greatly reducing PCB area and offering... | |
| The SKY77778-21 Power Amplifier Module (PAM) is a fully matched, 10-pad surface mount (SMT) module developed for LTE applications. The module includes broadband coverage of LTE FDD Band 7 and... | |
| The SKYA21051 is an automotive ultra-broadband low-noise amplifier with superior gain flatness and exceptional linearity. The compact 2 x 2 mm, 8-pin Dual Flat No Lead packaged LNA is designed... | |
| The SMA18-1 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This single stage GaAs FET feedback amplifier design displays... | |
| This 12.5 W CW RF power integrated circuit is designed for RF energy applications operating in the 2450 MHz ISM band. | |
| This LNA is a low noise figure, wideband, and excellent gain flatness amplifier with very compact design. The amplifier offers the 2 dB noise figure, 22 dB gain, and 10... | |
| This LNA is a low noise figure, wideband, and high linearity low noise amplifier with exceptional gain flatness design. The amplifier offers typical 1 dB noise figure, 17 dB gain,... | |
| WA0304A is integrated with WanTcom proprietary low noise amplifier technology, high frequency micro electronic assembly techniques, and high reliability design to realize optimum low noise figure, wideband, high linearity, and... | |
| WA0405A is integrated with WanTcom proprietary low noise amplifier technology, high frequency micro electronic assembly techniques, and high reliability design to realize optimum low noise figure, wideband, high linearity, and... | |
| WA0510A is integrated with WanTcom proprietary low noise amplifier technology, high frequency micro electronic assembly techniques, and high reliability design to realize optimum low noise figure, wideband, high linearity, and... | |
| WA55-1520A is integrated with WanTcom proprietary low noise amplifier technology, high frequency micro electronic assembly techniques, and high reliability design to realize optimum low noise figure, wideband, high linearity, and... | |
| WBA0001A 1~300 MHz LOW NOISE AMPLIFIER. WBA0001A integrates WanTcom proprietary power amplifier technology, high frequency micro electronic assembly techniques, and high reliability design to realize optimum low noise figure, wideband,... | |
| WBA0001B integrates WanTcom proprietary power amplifier technology, high frequency micro electronic assembly techniques, and high reliability design to realize optimum low noise figure, wideband, high linearity, and exceptional gain flatness... | |
| WBA0003A integrates WanTcom proprietary low noise amplifier technology, high frequency micro electronic assembly techniques, and high reliability design to realize optimum low noise figure, wideband, high linearity, and unconditional stable... | |
| WBA0010-45A is integrated with WanTcom proprietary low noise amplifier technology, high frequency micro electronic assembly techniques, and high reliability design to realize optimum low noise figure, wideband, high linearity, and... | |
| WBA0010A integrates WanTcom proprietary amplifier technology, high frequency microelectronic assembly techniques, and high reliability design to optimize low noise figure, high linearity, and exceptional gain flatness performance. | |
| WBA0030L integrates WanTcom proprietary low noise amplifier technology, high frequency micro electronic assembly techniques, and high reliability design to realize optimum low noise figure, wideband, high linearity, and unconditional stable... | |
| WBA0105A is integrated with WanTcom proprietary low noise amplifier technology, high frequency micro electronic assembly techniques, and high reliability design to realize optimum low noise figure, wide bandwidth, high linearity,... | |
| WBA0105B is integrated with WanTcom proprietary low noise amplifier technology, high frequency micro electronic assembly techniques, and high reliability design to realize optimum low noise figure, wide bandwidth, high linearity,... | |
| WBA0130-45A is integrated with WanTcom proprietary low noise amplifier technology, high frequency micro electronic assembly techniques, and high reliability design to realize optimum low noise figure, wideband, exceptional gain flatness,... | |
| WBA0130A integrates WanTcom proprietary power amplifier technology, high frequency micro electronic assembly techniques, and high reliability design to realize optimum low noise figure, wideband, high linearity, and unconditional stable performances... | |
| WBA0180210A is integrated with WanTcom proprietary low noise amplifier technology, high frequency micro electronic assembly techniques, and high reliability design to realize optimum low noise figure, wideband, high linearity, and... | |
| WBA0204A is integrated with WanTcom proprietary low noise amplifier technology, high frequency micro electronic assembly techniques, and high reliability design to realize optimum low noise figure, wide bandwidth, high linearity,... | |
| WBA0204B is integrated with WanTcom proprietary low noise amplifier technology, high frequency micro electronic assembly techniques, and high reliability design to realize optimum low noise figure, wide bandwidth, high linearity,... | |
| WBA0242F integrates WanTcom proprietary lownoise amplifier technology, high frequency microelectronic assembly techniques, and high reliabilitydesign to realize optimum low noise figure,wideband, high linearity, and unconditional stableperformances together. With single +5.0V... | |
| WBA0320A integrates WanTcom proprietary low noise amplifier technology, high frequency micro electronic assembly techniques, and high reliability design to realize optimum low noise figure, wideband, high linearity, and unconditional stable... | |
| WBA0520-45A integrates WanTcom proprietary low noise amplifier technology, high frequency micro electronic assembly techniques, and high reliability design to realize optimum low noise figure, wideband, high linearity, and unconditional stable... | |
| WBA0913AS is integrated with WanTcomproprietary low noise amplifier technology, highfrequency micro electronic assembly techniques,and high reliability design to realize optimum lownoise figure, wideband, high linearity, andexceptional gain flatness performances together.With... | |
| WBA0915-60A integrates WanTcom proprietary low noise amplifier technology, high frequency micro electronic assembly techniques, and high reliability design to realize optimum low noise figure, wideband, high linearity, and unconditional stable... | |
| WBA1020-50A integrates WanTcom proprietary low noise amplifier technology, high frequency micro electronic assembly techniques, and high reliability design to realize optimum low noise figure, wideband, high linearity, and unconditional stable... | |
| WBA1030A is integrated with WanTcom proprietary low noise amplifier technology, high frequency micro electronic assembly techniques, and high reliability design to realize optimum low noise figure, wide bandwidth, high linearity,... | |
| WBA1216-28A integrates WanTcom proprietary low noise amplifier technology, high frequency micro electronic assembly techniques, and high reliability design to realize optimum low noise figure, wideband, high linearity, and unconditional stable... | |
| WBA1225-45AS is integrated with WanTcom proprietary low noise amplifier technology, high frequency micro electronic assembly techniques, and high reliability design to realize optimum low noise figure, wide bandwidth, high linearity,... | |
| WBA1535-25A is integrated with WanTcom proprietary low noise amplifier technology, high frequency micro electronic assembly techniques, and high reliability design to realize optimum low noise figure, wide bandwidth, high linearity,... | |
| WBA220260A is integrated with WanTcom proprietary low noise amplifier technology, high frequency micro electronic assembly techniques, and high reliability design to realize optimum low noise figure, wideband, high linearity, and... | |
| WBA60180B integrates WanTcom proprietary low noise amplifier technology, high frequency micro electronic assembly techniques, and high reliability design to realize optimum low noise figure, wideband, high linearity, and excellent gain... | |
| WBA80180AC integrates WanTcom proprietary low noise amplifier technology, high frequency micro electronic assembly techniques, and high reliability design to realize optimum low noise figure, wideband, high linearity, and unconditional stable... | |
| WBA80180B integrates WanTcom proprietary low noise amplifier technology, high frequency micro electronic assembly techniques, and high reliability design to realize optimum low noise figure, wideband, high linearity, and excellent gain... | |
| WBA80180C integrates WanTcom proprietary low noise amplifier technology, high frequency micro electronic assembly techniques, and high reliability design to realize optimum low noise figure, wideband, high linearity, and unconditional stable... |
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