Richardson RFPD Datasheets for Diodes
Diodes are electronic components that conduct electric current in only one direction, functioning as a one-way valve. Diodes are manufactured using semiconductor materials such as silicon, germanium or selenium and are used as voltage regulators, signal rectifiers, oscillators and signal modulators / demodulators.
Diodes: Learn more
| Product Name | Notes |
|---|---|
| 50 ns Ultra-Fast Recovery High Voltage Rectifier Diodes|•PIV to 10,000 Volts|•50 ns ultra-fast recovery|•Small size|•Exceptionally low leakage|•High surge capability|•Avalanch e characteristics | |
| 6th Generation 650 V, 6 A Silicon Carbide Schottky Diode With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher... | |
| Abrupt Junction Varactor Diode Chip | |
| Avalanche Diode|•Avalanche type reverse characteristic|•Tran sient voltage proof within specified limits|•Taped for automatic insertion|•Available with formed leads on request|•Plastic material used carries Underwriter Laboratories flammability classification 94V-0|Typical Applications:|•DC supply for... | |
| Bridge Rectifier|•Compact design|•One screw mounting|•Heat transfer and insulation through direct copper bonded aluminum oxide ceramic (DCB)|•Up to 1600V reverse voltage|•High surge currents|•Glass passived diodes chips|•UL recognized, file no. E 63... | |
| Bridge Rectifier|•Compact design|•SKiiP technology: thermal pressure contact, no base plate and no hard mould|•Two screws mounting|•Heat transfer and isolation through direct copper board (low Rth)|•Low resistance in steady-state and high... | |
| DIODE FULL BRIDGE POWER MODULE. Application: Uninterruptible Power Supply (UPS), Induction Heating, Welding Equipment, High Speed Rectifiers. Features: Ultra Fast Recovery Times, Soft Recovery Characteristics, High Blocking Voltage, High Current,... | |
| DIODE PHASE LEG POWER MODULE. Application: Anti-Parallel Diode, Uninterruptible Power Supply (UPS), Induction Heating, Welding Equipment, High Speed Rectifiers. Features: Ultra Fast Recovery Times, Soft Recovery Characteristics, High Blocking Voltage,... | |
| DME, DMF, DMJ Series: Silicon Beam-Lead Schottky Mixer Diodes—Singles, Pairs and Quads Bondable and Packaged Chips | |
| DQ Diode Features Ultrafast recovery times Soft recovery Low leakage current Avalanche energy rated AEC-Q101 qualified DQ Diode Benefits Higher switching frequency Low switching losses Low noise (EMI) switching Easy... | |
| DSG9500-000: Planar Beam Lead PIN Diode | |
| Dual Diode - Common Cathode Configuration: MACOM offers silicon PIN diodes in five standard, low cost, surface mount plastic packages for use as switches and attenuators. These diodes are offered... | |
| Dual Diode - Common Cathode Configuration: MACOM's MA4ST1200 series is a highly repeatable, UHCVD/ion-implanted, hyper abrupt silicon tuning varactor in a cost effective surface mount package. This series of varactors... | |
| Dual Diode - Connected (Anti-Parallel) Configuration: The MA4E2508 SURMOUNT™ Anti-Parallel Diode Series are Silicon Low, Medium, & High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC)... | |
| Dual Diode - Reverse Series Pair (Reverse Tee) Configuration: MACOM offers silicon PIN diodes in five standard, low cost, surface mount plastic packages for use as switches and attenuators. These... | |
| Dual Diode - Reverse Series Pair (Reverse Tee) Configuration: MACOM's MA4E1317 single, MA4E1318 anti-parallel pair, MA4E1319-1 reverse tee, MA4E1319-2 series tee and MA4E2160 unconnected anti-parallel pair are gallium arsenide flip... | |
| Dual Diode - Series Pair (Tee) Configuration: The MA4E1340 series is a silicon medium barrier schottky diode suitable for use in mixer, detector and limiter circuits. These diodes are also... | |
| Dual Diode - Series Pair (Tee) Configuration: The MA4E2200 series are Silicon zero bias P-type detector diodes assembled in low cost surface mount plastic packages. They are designed for usage... | |
| FAST DIODE FULL BRIDGE POWER MODULE. Application: Uninterruptible Power Supply (UPS), Induction Heating, Welding Equipment, High Speed Rectifiers. Features: Ultra Fast Recovery Times, Soft Recovery Characteristics, High Blocking Voltage, High... | |
| Fast Diode Full Bridge Power Module | |
| Fast Diode Module|•CAL (controlled axial lifetime) technology, patent No. DE 43 10 44|•Heat transfer through ceramic isolated metal baseplate|•Very short recovery times|•Soft recovery|•Low switching losses|•SKKD half bridge connection|•UL recognized, file... | |
| Fast Diode Module|•Heat transfer through ceramic isolated metal baseplate|•Hard soldered joints for high reliability|•SKKD half bridge connection|•UL recognized, file no. E 63 532|Typical Applications:|•Self- commutated inverters|•DC choppers|•AC motor speed control|•Inductive... | |
| Fast Diode Module|•Very soft recovery over the whole current range|•Very short recovery times|•Low switching losses|•Heat transfer through ceramic isolated metal baseplate|•Materials and distances according to UL|Typical Applications:|•Self- commutated inverters|•DC choppers|•AC... | |
| Fast Recovery Rectifier Diode|•Small recovered charge|•Soft recovery|•Hermetic metal case with glass insulator|•Threaded stud M12|•SKN: anode to stud; SKR: cathode to stud|Typical Applications:|•Inver se diode for GTO and asymmetric thyristor|•Inverters and... | |
| Fast Recovery Rectifier Diode|•Small recovered charge|•Soft recovery|•Up to 1500 V reverse voltage|•Hermetic metal case with glass insulator|•Threaded studs ISO M6 and M8|•SKN: anode to stud; SKR: cathode to stud|Typical Applications:|•Inver... | |
| Fast Recovery Rectifier, 300 Amperes Average, 1600 Volts. | |
| Fast Switching Speed, Low Capacitance, Plastic Packaged PIN Diodes | |
| Features 4th Generation SiC Merged PIN Schottky Technology Zero Reverse Recovery Current High-Frequency Operation Temperature-Independ ent Switching Behavior AEC-Q101 Qualified and PPAP Capable Humidity Resistant Benefits Replace Bipolar with Unipolar... | |
| Features 600-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independ ent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient... | |
| Features 600-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independ ent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on VF Benefits Replace Bipolar... | |
| Features 650 Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independ ent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on VF Benefits Replace... | |
| Features 650-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independ ent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on VF Benefits Replace Bipolar... | |
| Features New 6th Generation Technology Low Forward Voltage Drop (VF) Zero Reverse Recovery Current Zero Forward Recovery Voltage Low Leakage Current (Ir) Temperature-Independ ent Switching... | |
| Features SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature Independent switching behavior, Positive temperature coefficient on VF M5 power connectors AlN substrate for improved thermal performance Benefits Outstanding... | |
| Features SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature Independent switching behavior, Positive temperature coefficient on VF M5 power connectors Low stray inductance AlN substrate for improved thermal... | |
| Features Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF M5 power connectors Aluminum nitride (AlN) substrate for improved... | |
| Features Ultra fast recovery times Soft recovery characteristics Low forward voltage Low leakage current Avalanche-energy rated RoHS compliant Benefits High switching frequency Low switching losses Low noise (EMI) switching Higher... | |
| General Purpose Rectifier 200 - 300 Amperes Average, 1400 - 2600 Volts | |
| General purpose rectifier | |
| Glass Passivated Rectifier Diode Modules | |
| High Voltage 50 mA Silicon Rectifiers|•Small size molded packages|•PRV 10,000 to 15,000 volts|•Fast recovery (R series)|•Avalanche characteristics|•Low leakage | |
| High Voltage Rectifier Assemblies|•Quick disconnect tab terminals|•Universal mounting|•PRV 5,000 to 15,000 volts|•Average current to 1 Amperes | |
| HIGH VOLTAGE SCHOTTKY DIODE. Applications: Parallel Diode, Free Wheeling Diode, Snubber Diode, Uninterruptible Power Supply (UPS), 48 Volt Output Rectifiers, High Speed Rectifiers. Features: Ultrafast Recovery Times, Soft Recovery Characteristics,... | |
| HIGH VOLTAGE SILICON RECTIFIERS | |
| High Voltage Silicon Rectifiers|•Small size molded packages|•PRV 15,000 to 30,000 volts|•Fast recovery|•Avalanche characteristics|•Low leakage | |
| High Voltage, High Current, Fast Recovery Silicon Rectifier Diodes|•Up to 250 ns max. recovery|•Small size|•Exceptionally low leakage|•Avalanche characteristics | |
| Hitachi ABB Power Grids’ power semiconductorsprovid e the ultimate in reliability and are the epitomeof quality. Whether efficiently driving industrialmotors, smoothly accelerating fans andpumps or supplying power to demanding applications– | |
| Hyberabrupt Junction Tuning Varactor Diode | |
| Hyberabrupt Junction Tuning Varactor | |
| Hyperabrupt Junction Tuning Varactor | |
| Hyperabrupt Tuning Varactors Supplied on Film Frame and Waffle Packs | |
| Low Capacitance Plastic Packaged PIN Diodes | |
| Low Resistance Low Capacitance Plastic Packaged PIN Diodes | |
| Low Resistance Plastic Packaged PIN Diodes | |
| Low-Distortion Attenuator Plastic Packaged PIN Diodes | |
| M/A-COM Technology Solutions MADP-000907-14020 is a solderable, flip-chip Aluminum Gallium Arsenide (AlGaAs) PIN diode. It is fabricated with MOCVD grown epitaxy using a process and design that optimizes device to... | |
| M/A-COM's MADP-007167-12250T RoHS equivalent product is a wideband, moderate insertion loss, high IP3, PIN Diode π Quad Attenuator in a low-cost, surface mount SOT-25 package. Four PIN Diodes in one... | |
| MACOM's MA4P7455-1225T is a wideband, lower insertion loss, high IP3, Quad PIN Diode ? Attenuator in a low-cost, surface mount SOT-25 package. Four PIN Diodes in one package reduce design... | |
| Minibridge® 27.5 Amperes Three-Phase Full-Wave Bridge|•Heat Sink|•Chassis Mounting|•UL Recognized | |
| PIN-Schottky Anti-Parallel Diode Limiter. The MADL-011021 is a lead-free 1.5 x 1.2 mm TDFN surface mount plastic packaged that provides both low and high signal frequency operation from 10 MHz... | |
| Power Bridge Rectifier | |
| Power Bridge Rectifier|•Isolated metal case with screw terminals|•Blocking voltage up to 1600 V|•High surge currents|•Easy chassis mounting|•UL recognized, file no. E 63 532|Typical Applications:|•Three phase rectifiers for power supplies|•Input rectifiers... | |
| Power Bridge Rectifier|•Robust plastic case with screw terminals|•Large, isolated base plate|•Blocking voltage to 1600 V|•High surge currents|•Three phase bridge rectifier|•Easy chassis mounting|•UL recognized, file no. E 63 532|Typical Applications:|•Three phase... | |
| Power Bridge Rectifier|•Robust plastic case with screw terminals|•Large, isolated base plate|•Blocking voltage up to 1800 V|•High surge currents|•Three phase bridge rectifier|•Easy chassis mounting|•UL recognition applied for file no. E 63... | |
| Power Bridge Rectifier|•Robust plastic case with screw terminals|•Large, isolated base plate|•Blocking voltage up to 1800 V|•High surge currents|•Three phase bridge rectifier|•Easy chassis mounting|•UL recognized, file no. E 63 532|Typical Applications:|•Three... | |
| Powerex Dual Diode Modules are designed for use in applications requiring rectification and isolated packaging. The modules are isolated for easy mounting with other components on a common heatsink. POW-R-BLOK™ | |
| Powerex Fast Recovery Diode Modules are designed for use in applications requiring fast switching. The modules are isolated for easy mounting with other components on a common heatsink. | |
| Powerex Fast Recovery Welder Diode Modules are designed for use in applications requiring fast switching. The modules are isolated for easy mounting with other components on common heat sinks. | |
| Powerex Single Diode Modules are designed for use in applications requiring rectification and isolated packaging. The modules are isolated for easy mounting with other components on a common heatsink. POW-R-BLOK™ | |
| Powerex Single Non-isolated Discrete is designed specially for customer high voltage applications. | |
| Powerex Super Fast Recovery Dual Diode Modules are designed for use in applications requiring high speed rectification or voltage clamping in isolated packaging. The modules are insulated for easy mounting... | |
| Powerex Three-Phase Diode Bridge Modules are designed for use in applications requiring rectification of three-phase AC lines into DC voltage. Each module consists of six diodes and the interconnect required... | |
| Powerex Three-Phase Diode Bridge Modules are designed for use in three-phase bridge application. The modules are isolated consisting of six rectifier diodes. | |
| Powerex Three-Phase SCR/Diode Bridge Modules are designed for use in applications requiring variable DC Voltage control from AC mains. The modules are isolated for easy mounting with other components on... | |
| Product Applications Anti-Parallel Diode Free Wheeling Diode Snubber Diode PFC Product Features Ultrafast Recovery Times Soft Recovery Characteristics Popular TO-247 Package Low Forward Voltage Low Leakage Current Product Benefits Low... | |
| Quad Diode Ring Configuration: The MA4E2532-1113 Series SURMOUNT™ Low and Medium Barrier, Silicon Schottky Ring Quad Diodes are fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits... | |
| Rectifier Diode Modules | |
| Rectifier Diode Module|•Heat transfer through aluminum nitride ceramic isolated metal baseplate|•Precisiou s metal pressure contacts for high reliability|•UL recognized, file no. E 63 532|Typical Applications:|•Uncon trolled rectifiers for AC/AC converters|•Line... | |
| Rectifier Diode Module|•Heat transfer through aluminum oxide ceramic isolated metal baseplate|•Hard soldered joints for high reliability|•Center- tap connections SKMD common cathode|•UL recognized, file no. E 63 532|Typical Applications:|•Non-c ontrollable rectifiers... | |
| Rectifier Diode Module|•Heat transfer through aluminum oxide ceramic isolated metal baseplate|•Hard soldered joints for high reliability|•SKKD half bridge connection|•UL recognized, file no. E 63 532|Typical Applications:|•Non-c ontrollable rectifiers for AC/AC... | |
| Rectifier Diode Module|•Heat transfer through aluminum oxide ceramic isolated metal baseplate|•Hard soldered joints for high reliability|•UL recognized, file no. E 63 532|Typical Applications:|•Non-c ontrollable rectifiers for AC/AC converters|•Line rectifiers for... | |
| Rectifier Diode Features Reverse voltages up to 3000 V Hermetic metal case with ceramic insulator with extra long creepage distances Threaded stud ISO M24 x 1,5 SKN: anode to stud... | |
| Rectifier Diode|•Capsule type metal-ceramic package with precious metal pressure contacts|•Medium voltage, high current rectifier diode with slim package for lowest thermal resistance|•Low power dissipation|•Especia lly suited for water cooling|•Forward selections... | |
| Rectifier Diode|•Reverse voltages up to 1600 V|•Hermetic metal case with glass insulator|•Threaded stud ISO M24 x 1.5|•SKR: cathode to stud|Typical Applications:|•All-p urpose high power rectifier diodes|•Cooling via heatsinks|•Non-contr ollable and... | |
| Rectifier Diode|•Reverse voltages up to 1600 V|•Hermetic metal case with glass insulator|•Threaded stud ISO M8 and also 1/4-28 UNF|•SKR: cathode to stud|Typical Applications:|•All-p urpose mean power rectifier diodes|•Cooling via heatsinks|•Non-contr... | |
| Rectifier Diode|•Reverse voltages up to 1600 V|•Hermetic metal case with glass insulator|•Threaded stud ISO M8|•SKR: cathode to stud|Typical Applications:|•All-p urpose mean power rectifier diodes|•Cooling via heatsinks|•Non-contr ollable and half-controllable rectifiers|•Free-whe... | |
| Rectifier Diode|•Reverse voltages up to 1800 V|•Hermetic metal case with glass insulator|•Threaded stud ISO M12 (also 1/2 - 20 UNF, 3/8 - 24 UNF and M12 x 1.5)|•SKN: anode to... | |
| Rectifier Diode|•Reverse voltages up to 1800 V|•Hermetic metal case with glass insulator|•Threaded stud ISO M12 (also 1/2 - 20 UNF, 3/8 - 24 UNF and M12 x 1.5)|•SKR: cathode to... | |
| Rectifier Diode|•Reverse voltages up to 1800 V|•Hermetic metal case with glass insulator|•Threaded stud ISO M16 x 1.5|•SKN 240/04 ... /16 also available with threaded stud 3/4 - 16 UNF|•SKN: anode... | |
| Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the... | |
| SEMIPACK® 2 Rectifier Diode Modules Features Heat transfer through aluminium oxide ceramic isolated metal baseplate Hard soldered joints for high reliability Typical Applications Non-controllable rectifiers for AC/AC converters Line... | |
| SEMISTACK® CLASSICS - B6U, Three phase uncontrolled rectifier | |
| Silicon Beamless Schottky Diodes—Pairs and Quads | |
| Silicon Beamless Schottky Diodes-Pairs and Quads | |
| Silicon Carbide Schottky Diode | |
| Silicon Carbide Schottky Diode Features 650-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independ ent Switching Behavior Extremely Fast... | |
| Silicon Carbide Schottky Diode Features 650-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independ ent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on V... | |
| Silicon Limiter Diodes, Packaged and Bondable Chips | |
| Silicon PIN Diode Chips | |
| Silicon Schottky Barrier Diodes: Packaged, Bondable Chips and Beam-Leads | |
| Silicon Schottky Diode Chips | |
| Single Diode Configuration: Gallium Arsenide PIN diodes offer improved performance characteristics over silicon in many microwave semiconductor applications These benefits result from the intrinsic semiconductor properties of GaAs. Its inherent... | |
| Single Diode Configuration: HIPAX PIN diode series is designed for usage in switch and attenuator applications requiring high power handling and low distortion. HIPAX PIN diodes incorporate a fully passivated... | |
| Single Diode Configuration: Kilovolt PIN diodes utilize modern semiconductor and packaging technology that assures low loss, low distortion, and reliable performance in multi-kilowatt switch applications at frequencies as low as... | |
| Single Diode Configuration: MA4GP907 is a Gallium Arsenide Flip-Chip PIN diode. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low... | |
| Single Diode Configuration: MACOM offers a comprehensive line of low capacitance, planar and mesa, silicon PIN diode chips which use ceramic glass and silicon nitride passivation technology. The Silicon PIN... | |
| Single Diode Configuration: MACOM offers four families of low cost surface mount gallium arsenide tuning varactors. All families have silicon nitride protected junctions for low leakage current and high reliability. | |
| Single Diode Configuration: MACOM offers silicon PIN diodes in five standard, low cost, surface mount plastic packages for use as switches and attenuators. These diodes are offered with standard Sn/Pb... | |
| Single Diode Configuration: MACOM produces a series of silicon PIN limiter diodes with small and medium I-region lengths which are specifically designed for high signal applications. The devices are designed... | |
| Single Diode Configuration: MACOM's Broad line of packaged PIN diodes encompasses a comprehensive range of electrical characteristics and package outlines. This diverse union of semiconductor technology and chip packaging gives... | |
| Single Diode Configuration: MACOM's series of low and medium power glass PIN diodes are specifically designed for use in switches, duplexers, electrically tuned digital filters AGC attenuators, TR switches and... | |
| Single Diode Configuration: The MA45300 series of silicon abrupt junction tuning varactors has been designed to obtain the highest Q possible. All diodes in this series have a high density... | |
| Single Diode Configuration: The MA46450, MA46470 and MA46410 series of tuning varactors are hyperabrupt junction Gallium Arsenide diodes featuring constant gamma 1.0 (MA46450 series), 1.25 (MA46470 series) or 1.5 (MA46410... | |
| Single Diode Configuration: The MA4E1339 series is a silicon medium barrier Schottky diode suitable for use in mixer, detector and limiter circuits. These diodes are also usable in anti-parallel, shunt... | |
| Single Diode Configuration: The MA4E1340 series is a silicon medium barrier schottky diode suitable for use in mixer, detector and limiter circuits. These diodes are also suitable for usage in... | |
| Single Diode Configuration: The MA4ST400 series are ion-implanted, hyperabrupt junction, silicon tuning varactors in the SOT-23 surface mount package. These thermal oxide passivated diodes feature high capacitance ratio and quality... | |
| Single Diode Configuration: The MA4ST550 family of high Q Silicon Hyperabrupt Tuning Varactors is available in a series of low parasitic capacitance microwave packages or in chip form. The MA4ST550... | |
| Single Diode Configuration: This device is a Silicon-Glass PIN diode chip fabricated with MACOM's patented HMIC™ process. This device features two silicon pedestals embedded in a low loss, low dispersion... | |
| Single Diode Configuration: This family of low capacitance Schottky diodes is designed to give superior performance in video detectors and power monitors from 100 MHz through 40 GHz. They have... | |
| Single Diode Configuration: This family of Zero Bias Detector (ZBD) diodes is designed for use in video detectors and power monitors eliminating the need to provide external DC Bias to... | |
| Single Diode Configuration: This series of M/ACOM semiconductor products is hermetically sealed strip-line package PIN diode designed to drop into a 50 ohm strip-line circuit without external matching. The MA47200... | |
| Single Diode Configuration: This Zero Bias Detector (ZBD) diode is suitable for use in microstrip or stripline detector circuits. The 4 mil diameter gold pad and sturdy construction allow you... | |
| SMV2026 Series: Surface-Mount, Silicon Hyperabrupt Tuning Varactor Diodes. The SMV2026 series are silicon surface-mount, hyperabrupt tuning varactor diodes, excellent for use as high-Q tuning elements in an RF Voltage Controlled... | |
| Surface Mount Mixer and Detector Schottky Diodes | |
| Surface Mount PIN Diode | |
| The first is attenuators where current consumption is the most important design consideration. The second application for this series of diodes is in switches where low capacitance is the driving... | |
| The GC4700 series diodes are specially processed PIN diodes designed for use in passive or active limiters at frequencies through Ku band. Thirteen categories of devices are offered for flexibility... | |
| The MA44700 series of Step Recovery diodes is designed for use in low power multipliers with output frequencies of up to 5 GHz. These Step Recovery diodes generate harmonics by... | |
| The MA4E2054 series are low barrier n-type silicon Schottky diodes assembled in low cost surface mount plastic packages. They are designed for use as high performance mixer and detector diodes. | |
| The MA4E2200 series are silicon zero bias P-type detector diodes assembled in low cost surface mount plastic packages. They are designed for usage in a wide variety of detector applications. | |
| The MADP-000235-10720T is a surface mount PIN diode in a non-magnetic Metal Electrode Leadless Faced (MELF) package. The MADP-000235-10720T is manufactured using M/A-COM Technology Solutions time proven HIPAX technology. The... | |
| The MLP71xx Series limiter diodes are specially processed PIN diodes with thin intrinsic regions designed for use in passive or active limiters from 100 MHz to beyond 20 GHz. The... | |
| The MMP4400 series are high-voltage, high-power (cathode base) PIN diodes. These high-resistivity silicon devices are glass passivated for high stability and reliability, and have been proven by thousands of device... | |
| The MSWSE-020-05 is a SPST PIN diode switchelement designed for medium incident powerapplications, up to 20 W CW. It has low insertionloss and medium isolation below 0.5 GHz. | |
| The silicon carbide (SiC) power Schottky barrier diode (SBD) product line from Microsemi increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. | |
| The silicon carbide (SiC) power Schottky barrier diodes (SBD) product line from Microsemi increases your performance over silicon diode solutions while lowering your total cost of ownership for high voltage... | |
| The SKY16603-632LF is a fully integrated dual PIN diodehigh-linearity limiter module in a surface-mount package. It isdesigned for use as a passive receiver protector in wireless orother RF systems for... | |
| The SMP1331-085LF is a surface mountable, low capacitance silicon PIN diode designed as a shunt connected PIN diode for high power, high volume switch and attenuator applications from 10 MHz... | |
| The SMV1405-040LF is a silicon abrupt junction varactor diode designed for use in Voltage Controlled Oscillators (VCOs) that require tight capacitance tolerances. The low resistance of this varactor makes it... | |
| The SMV1763-079LF is a silicon hyperabrupt junction varactor diode specifically designed for 3 V platforms. The specified high capacitance ratio and low reverse voltage make this varactor appropriate for low... | |
| The SMV1801-079LF is a silicon hyperabrupt junction varactor diode specifically designed for battery operation. The specified high capacitance ratio and low series resistance make this varactor appropriate for low phase... | |
| The SMV2019-SMV2023 series are silicon hyperabrupt junction varactor diodes. The capacitance ratio and low series resistance of these varactors make them attractive for low phase noise Voltage-Controlled Oscillators (VCOs) in... | |
| The SMV2025 series are silicon surface mount, hyperabrupt tuning varactor diodes, excellent for use as high-Q tuning elements in an RF Voltage Controlled Oscillator (VCO), voltage-controlled phase shifter, or tunable... | |
| The UM4000 series features high power PIN diodes with long carrier lifetimes and thick I-regions. They are especially suitable for use in low distortion switches and attenuators, in HF through... | |
| The UM4300 series combine a diode chip of extremely thick intrinsic region with a low thermal resistance construction. This results in diodes uniquely applicable to very low distortion linear attenuators... | |
| The UM7200 series offer moderately high power handling in combination with reasonably low levels of both series resistance and capacitance. The UM7200 series offers the lowest series resistance, but the... | |
| The UM7300 series combine a diode chip of extremely thick intrinsic region with a low thermal resistance construction. This results in diodes uniquely applicable to very low distortion linear attenuators... | |
| The UM9601-UM9608 series of PIN diodes was developed for shunt mount applications in microstrip circuits. Good switch performance is demonstrated at frequencies from UHF to 4 GHz and higher. This... | |
| The UM9995 was developed for switching applications in MRI systems that require an ultra low magnetic image. The UM9995 is also excellent for shunt mount applications with good switch performance... | |
| The UMX1089 diode series was designed to protect MRI receivers from high RF energy fields including long RF pulses and RF spike pulses present in most MRI machines. The UMX1089... | |
| The UMX5601TM PIN diode series was designed to provide ultra low magnetic PIN diodes for in bore surface coil applications associated with higher field strength (3T and greater) MR scanners. | |
| This device is a silicon, glass PIN diode surmount chip fabricated with MACOM’s patented HMICTM process. This device features two silicon pedestals embedded in a low loss, low dispersion glass. | |
| This series of surface mount PIN and Limiter diodes utilize new and unique monolithic MMSM technology. The technology is a package/device integration accomplished at the wafer fabrication level. Since the... | |
| This SMT limiting diode driver element consists of a specially processed Schottky diode packaged in a convenient, low-cost plastic outline suitable for standard or co-planar microstrip circuits. Featuring lowloss, low... | |
| Ultrafast Soft Recovery Parallel Dual Rectifier Diode | |
| ULTRAFAST SOFT RECOVERY RECTIFIER DIODE. Applications: Anti-Parallel Diode, Free Wheeling Diode, Snubber Diode, PFC. Features: Ultrafast Recovery Times, Soft Recovery Characteristics, Popular TO-220 Package or Surface Mount D2PAK Package, Low... | |
| ULTRAFAST SOFT RECOVERY RECTIFIER DIODE. Applications: Anti-Parallel Diode, Free Wheeling Diode, Snubber Diode, PFC. Features: Ultrafast Recovery Times, Soft Recovery Characteristics, Popular TO-247 Package or Surface Mount D3PAK Package, Low... | |
| ULTRAFAST SOFT RECOVERY RECTIFIER DIODE. Applications: Anti-Parallel Diode, Free Wheeling Diode, Snubber Diode, Uninterruptible Power Supply (UPS), Induction Heating, High Speed Rectifiers. Features: Ultrafast Recovery Times (trr), Soft Recovery Characteristics,... | |
| ULTRAFAST SOFT RECOVERY RECTIFIER DIODE. Applications: Anti-Parallel Diode, Free Wheeling Diode, Snubber Diode, Uninterruptible Power Supply (UPS), Induction Heating, High Speed Rectifiers. Features: Ultrafast Recovery Times, Soft Recovery Characteristics, Popular... | |
| ULTRAFAST SOFT RECOVERY RECTIFIER DIODE. Applications: Output Rectifiers for Switchmode Power Supply. Features: Ultrafast Recovery Times, Soft Recovery Characteristics, Popular TO-247 Package, Low Forward Voltage, Low Leakage Current. Benefits: Low... | |
| Very Low Capacitance Plastic Packaged Silicon PIN Diodes | |
| Very Low Distortion Attenuator Plastic Packaged PIN Diodes | |
| With high isolation, low loss, and low distortion characteristics, this Microsemi Power PIN diode is perfect for the high power switching applications where size and power handling capability are critical. | |
| Zero Bias Silicon Schottky Barrier Detector Diodes |
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