Microchip Technology, Inc. RF & MW Power Amplifier MMA053AA

Description
MMA053AA is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pHEMT distributed power amplifier die that operates between DC and 8 GHz. The amplifier provides 17 dB of gain, +43 dBm output IP3, and +31 dBm of output power at 3 dB compression, while requiring only 410 mA from a 11 V supply. Gain flatness over the DC to 8 GHz frequency range varies by only ±0.5 dB, making the MMA053AA die ideal for EW, ECM, radar, and test equipment applications. The MMA053AA amplifier features compact die size and I/Os that are internally matched to 50 Ohm, facilitating easy integration into multi-chip modules (MCMs).
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Description
MMA053AA is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pHEMT distributed power amplifier die that operates between DC and 8 GHz. The amplifier provides 17 dB of gain, +43 dBm output IP3, and +31 dBm of output power at 3 dB compression, while requiring only 410 mA from a 11 V supply. Gain flatness over the DC to 8 GHz frequency range varies by only ±0.5 dB, making the MMA053AA die ideal for EW, ECM, radar, and test equipment applications. The MMA053AA amplifier features compact die size and I/Os that are internally matched to 50 Ohm, facilitating easy integration into multi-chip modules (MCMs).
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Suppliers

Company
Product
Description
Supplier Links
RF & MW Power Amplifier - MMA053AA - Richardson RFPD
Downers Grove, IL, United States
RF & MW Power Amplifier
MMA053AA
RF & MW Power Amplifier MMA053AA
MMA053AA is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pHEMT distributed power amplifier die that operates between DC and 8 GHz. The amplifier provides 17 dB of gain, +43 dBm output IP3, and +31 dBm of output power at 3 dB compression, while requiring only 410 mA from a 11 V supply. Gain flatness over the DC to 8 GHz frequency range varies by only ±0.5 dB, making the MMA053AA die ideal for EW, ECM, radar, and test equipment applications. The MMA053AA amplifier features compact die size and I/Os that are internally matched to 50 Ohm, facilitating easy integration into multi-chip modules (MCMs).

MMA053AA is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pHEMT distributed power amplifier die that operates between DC and 8 GHz. The amplifier provides 17 dB of gain, +43 dBm output IP3, and +31 dBm of output power at 3 dB compression, while requiring only 410 mA from a 11 V supply. Gain flatness over the DC to 8 GHz frequency range varies by only ±0.5 dB, making the MMA053AA die ideal for EW, ECM, radar, and test equipment applications. The MMA053AA amplifier features compact die size and I/Os that are internally matched to 50 Ohm, facilitating easy integration into multi-chip modules (MCMs).

Supplier's Site
Futian, China
RF and Wireless - RF Amplifiers
MMA053AA
RF and Wireless - RF Amplifiers MMA053AA
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Supplier's Site

Technical Specifications

  Richardson RFPD Shenzhen Shengyu Electronics Technology Limited
Product Category RF Amplifiers RF Amplifiers
Product Number MMA053AA MMA053AA
Product Name RF & MW Power Amplifier RF and Wireless - RF Amplifiers
Amplifier Type Power Amplifier
Frequency Range 0.0 to 8000 MHz 0.0 to 8000 MHz
Maximum Gain 17 dB 17 dB
Output Power 29 dBm
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