Microchip Technology, Inc. RF & MW LNA MMA043PP4

Description
The MMA043PP4 is a gallium arsenide (GaAs) pseudomorphic high-electron-mobili ty transistor (pHEMT) low-noise wideband amplifier in a leadless 4 mm × 4 mm surface-mount package that operates between 0.5 GHz and 12 GHz. The MMA043PP4 amplifier provides 16 dB of gain, 2.0 dB noise figure, and 28 dBm output IP3 and 17 dBm output P1dB while drawing only 55 mA of current from a 5 V supply. P1dB output power of +17 dBm enables the LNA to function as an LO driver for balanced, I/Q, or image reject mixers. The RF ports are internally matched to 50 Ohm. This product is also available in die format as the MMA043AA.
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Description
The MMA043PP4 is a gallium arsenide (GaAs) pseudomorphic high-electron-mobili ty transistor (pHEMT) low-noise wideband amplifier in a leadless 4 mm × 4 mm surface-mount package that operates between 0.5 GHz and 12 GHz. The MMA043PP4 amplifier provides 16 dB of gain, 2.0 dB noise figure, and 28 dBm output IP3 and 17 dBm output P1dB while drawing only 55 mA of current from a 5 V supply. P1dB output power of +17 dBm enables the LNA to function as an LO driver for balanced, I/Q, or image reject mixers. The RF ports are internally matched to 50 Ohm. This product is also available in die format as the MMA043AA.
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Suppliers

Company
Product
Description
Supplier Links
RF & MW LNA - MMA043PP4 - Richardson RFPD
Downers Grove, IL, United States
RF & MW LNA
MMA043PP4
RF & MW LNA MMA043PP4
The MMA043PP4 is a gallium arsenide (GaAs) pseudomorphic high-electron-mobili ty transistor (pHEMT) low-noise wideband amplifier in a leadless 4 mm × 4 mm surface-mount package that operates between 0.5 GHz and 12 GHz. The MMA043PP4 amplifier provides 16 dB of gain, 2.0 dB noise figure, and 28 dBm output IP3 and 17 dBm output P1dB while drawing only 55 mA of current from a 5 V supply. P1dB output power of +17 dBm enables the LNA to function as an LO driver for balanced, I/Q, or image reject mixers. The RF ports are internally matched to 50 Ohm. This product is also available in die format as the MMA043AA.

The MMA043PP4 is a gallium arsenide (GaAs) pseudomorphic high-electron-mobility transistor (pHEMT) low-noise wideband amplifier in a leadless 4 mm × 4 mm surface-mount package that operates between 0.5 GHz and 12 GHz. The MMA043PP4 amplifier provides 16 dB of gain, 2.0 dB noise figure, and 28 dBm output IP3 and 17 dBm output P1dB while drawing only 55 mA of current from a 5 V supply. P1dB output power of +17 dBm enables the LNA to function as an LO driver for balanced, I/Q, or image reject mixers. The RF ports are internally matched to 50 Ohm. This product is also available in die format as the MMA043AA.

Supplier's Site
RF and Wireless - RF Amplifiers - MMA043PP4 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
RF and Wireless - RF Amplifiers
MMA043PP4
RF and Wireless - RF Amplifiers MMA043PP4
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Supplier's Site

Technical Specifications

  Richardson RFPD Shenzhen Shengyu Electronics Technology Limited
Product Category RF Amplifiers RF Amplifiers
Product Number MMA043PP4 MMA043PP4
Product Name RF & MW LNA RF and Wireless - RF Amplifiers
Amplifier Type Low Noise Amplifier
Frequency Range 500 to 12000 MHz 500 to 12000 MHz
Maximum Gain 16 dB 16 dB
Output Power 17 dBm
Noise Figure 1.8 dB
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