The OM9901-11 power amplifier module (PAM) is designed and optimized for 2G quad-band cellular handsets supporting user-optional control of linear RF or analog Vramp of the GMSK envelope. The low band (LB) PA transmits in the GSM850/EGSM900 bands. The high band (HB) PA supports DCS1800/PCS1900 bands.
The compact 3.0 mm x 3.5 mm x 0.67 mm module consists of a quad-band power amplifier die, a silicon CMOS controller, 50 Ohm input and output matching circuitry. The silicon CMOS controller supports fully programmable through the RF Front-End Mobile Industry Processor Interface (RFFE MIPI) with providing PA bias and product identification read-back capability.
The power amplifier blocks, the controller and the passive components are mounted by flip-chip package technology on a multi-layer laminate substrate. The entire assembly is encapsulated with plastic over mold.
Product Features
High efficiency
Programmable bias for improved backed-off efficiency
High linearity for 8PSK
Low stand-by leakage
Compatible with DC-DC converter
Autonomous Over-voltage Protection
Vramp GMSK Power Control Mode
Flip-chip package
Small, low profile package. 3.0 mm x 3.5 mm x 0.67 mm Typical. 12-pads configuration
Applications
Quad-band cellular handsets
GMSK Modulation
Class 4 GSM850/EGSM900 Band
Class 1 DCS1800/PCS1900 Band
Class 12 GPRS multi-slot operation
EDGE Modulation
Class E2 GSM850/EGSM900
Class E2 DCS1800/PCS1900
The OM9901-11 power amplifier module (PAM) is designed and optimized for 2G quad-band cellular handsets supporting user-optional control of linear RF or analog Vramp of the GMSK envelope. The low band (LB) PA transmits in the GSM850/EGSM900 bands. The high band (HB) PA supports DCS1800/PCS1900 bands.
The compact 3.0 mm x 3.5 mm x 0.67 mm module consists of a quad-band power amplifier die, a silicon CMOS controller, 50 Ohm input and output matching circuitry. The silicon CMOS controller supports fully programmable through the RF Front-End Mobile Industry Processor Interface (RFFE MIPI) with providing PA bias and product identification read-back capability.
The power amplifier blocks, the controller and the passive components are mounted by flip-chip package technology on a multi-layer laminate substrate. The entire assembly is encapsulated with plastic over mold.
Product Features
- High efficiency
- Programmable bias for improved backed-off efficiency
- High linearity for 8PSK
- Low stand-by leakage
- Compatible with DC-DC converter
- Autonomous Over-voltage Protection
- Vramp GMSK Power Control Mode
- Flip-chip package
- Small, low profile package. 3.0 mm x 3.5 mm x 0.67 mm Typical. 12-pads configuration
Applications
- Quad-band cellular handsets
- GMSK Modulation
- Class 4 GSM850/EGSM900 Band
- Class 1 DCS1800/PCS1900 Band
- Class 12 GPRS multi-slot operation
- EDGE Modulation
- Class E2 GSM850/EGSM900
- Class E2 DCS1800/PCS1900
