Microchip Technology, Inc. RF & MW Power Amplifier MMA053PP5

Description
MMA053PP5 is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pHEMT distributed power amplifier that operates between DC and 10 GHz. The plastic packaged amplifier provides 17 dB of gain, 43 dBm output IP3, and 32 dBm of output power at 3 dB compression. Gain flatness over the 100 MHz to 10 GHz frequency range varies by only ±1 dB, making the MMA053PP5 ideal for EW, ECM, radar, and test equipment applications. The MMA053PP5 amplifier features compact plastic SMT package size and I/Os that are internally matched to 50 Ohm, which is ideal for any surface mount technology (SMT) assembly equipment.
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Description
MMA053PP5 is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pHEMT distributed power amplifier that operates between DC and 10 GHz. The plastic packaged amplifier provides 17 dB of gain, 43 dBm output IP3, and 32 dBm of output power at 3 dB compression. Gain flatness over the 100 MHz to 10 GHz frequency range varies by only ±1 dB, making the MMA053PP5 ideal for EW, ECM, radar, and test equipment applications. The MMA053PP5 amplifier features compact plastic SMT package size and I/Os that are internally matched to 50 Ohm, which is ideal for any surface mount technology (SMT) assembly equipment.
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Suppliers

Company
Product
Description
Supplier Links
RF & MW Power Amplifier - MMA053PP5 - Richardson RFPD
Downers Grove, IL, United States
RF & MW Power Amplifier
MMA053PP5
RF & MW Power Amplifier MMA053PP5
MMA053PP5 is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pHEMT distributed power amplifier that operates between DC and 10 GHz. The plastic packaged amplifier provides 17 dB of gain, 43 dBm output IP3, and 32 dBm of output power at 3 dB compression. Gain flatness over the 100 MHz to 10 GHz frequency range varies by only ±1 dB, making the MMA053PP5 ideal for EW, ECM, radar, and test equipment applications. The MMA053PP5 amplifier features compact plastic SMT package size and I/Os that are internally matched to 50 Ohm, which is ideal for any surface mount technology (SMT) assembly equipment.

MMA053PP5 is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pHEMT distributed power amplifier that operates between DC and 10 GHz. The plastic packaged amplifier provides 17 dB of gain, 43 dBm output IP3, and 32 dBm of output power at 3 dB compression. Gain flatness over the 100 MHz to 10 GHz frequency range varies by only ±1 dB, making the MMA053PP5 ideal for EW, ECM, radar, and test equipment applications. The MMA053PP5 amplifier features compact plastic SMT package size and I/Os that are internally matched to 50 Ohm, which is ideal for any surface mount technology (SMT) assembly equipment.

Supplier's Site
RF and Wireless - RF Amplifiers - MMA053PP5 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
RF and Wireless - RF Amplifiers
MMA053PP5
RF and Wireless - RF Amplifiers MMA053PP5
IC RF AMP GPS 0HZ-10GHZ 32QFN

IC RF AMP GPS 0HZ-10GHZ 32QFN

Supplier's Site

Technical Specifications

  Richardson RFPD Shenzhen Shengyu Electronics Technology Limited
Product Category RF Amplifiers RF Amplifiers
Product Number MMA053PP5 MMA053PP5
Product Name RF & MW Power Amplifier RF and Wireless - RF Amplifiers
Amplifier Type Power Amplifier
Frequency Range 0.0 to 10000 MHz 0.0 to 10000 MHz
Maximum Gain 17 dB 16.5 dB
Output Power 29 dBm
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