MACOM RF & MW Power Amplifier MAAP-015036-DIE

Description
Power Amplifier, 15 W, 8.5 - 10.5 GHz. The MAAP-015036 is a two stage GaAs MMIC power amplifier operating from 8.5 - 10.5 GHz, with a saturated pulsed output power of 42 dBm and a large signal gain of 18 dB. This power amplifier uses GaAs pHEMT device technology and is based upon optical gate lithography to ensure high repeatability and uniformity. The chip has surface passivation for protection and backside via holes and gold metallisation to allow a conductive epoxy die attach process. This device is well suited for communications, Point to Point radio and radar applications.
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Description
Power Amplifier, 15 W, 8.5 - 10.5 GHz. The MAAP-015036 is a two stage GaAs MMIC power amplifier operating from 8.5 - 10.5 GHz, with a saturated pulsed output power of 42 dBm and a large signal gain of 18 dB. This power amplifier uses GaAs pHEMT device technology and is based upon optical gate lithography to ensure high repeatability and uniformity. The chip has surface passivation for protection and backside via holes and gold metallisation to allow a conductive epoxy die attach process. This device is well suited for communications, Point to Point radio and radar applications.
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Suppliers

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Product
Description
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RF & MW Power Amplifier - MAAP-015036-DIE - Richardson RFPD
Downers Grove, IL, United States
RF & MW Power Amplifier
MAAP-015036-DIE
RF & MW Power Amplifier MAAP-015036-DIE
Power Amplifier, 15 W, 8.5 - 10.5 GHz. The MAAP-015036 is a two stage GaAs MMIC power amplifier operating from 8.5 - 10.5 GHz, with a saturated pulsed output power of 42 dBm and a large signal gain of 18 dB. This power amplifier uses GaAs pHEMT device technology and is based upon optical gate lithography to ensure high repeatability and uniformity. The chip has surface passivation for protection and backside via holes and gold metallisation to allow a conductive epoxy die attach process. This device is well suited for communications, Point to Point radio and radar applications.

Power Amplifier, 15 W, 8.5 - 10.5 GHz. The MAAP-015036 is a two stage GaAs MMIC power amplifier operating from 8.5 - 10.5 GHz, with a saturated pulsed output power of 42 dBm and a large signal gain of 18 dB. This power amplifier uses GaAs pHEMT device technology and is based upon optical gate lithography to ensure high repeatability and uniformity. The chip has surface passivation for protection and backside via holes and gold metallisation to allow a conductive epoxy die attach process. This device is well suited for communications, Point to Point radio and radar applications.

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Technical Specifications

  Richardson RFPD
Product Category RF Amplifiers
Product Number MAAP-015036-DIE
Product Name RF & MW Power Amplifier
Amplifier Type Power Amplifier
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