MMA052PP45 is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high-electron-mobili
ty transistor (pHEMT) distributed self-biased amplifier in plastic package form that operates between DC and 24GHz. It is ideal for test instrumentation, wideband military and space applications. The amplifier provides a 14 dB of gain with a rising slope, 3.5 dB noise figure, output IP3 of 35 dBm, and 27 dBm of output power at 3 dB gain compression at 10 GHz. The MMA052PP45 amplifier features RF I/Os that are internally matched to 50 Ohm, which is ideal for any surface mount technology (SMT) assembly equipment.
MMA052PP45 is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high-electron-mobility transistor (pHEMT) distributed self-biased amplifier in plastic package form that operates between DC and 24GHz. It is ideal for test instrumentation, wideband military and space applications. The amplifier provides a 14 dB of gain with a rising slope, 3.5 dB noise figure, output IP3 of 35 dBm, and 27 dBm of output power at 3 dB gain compression at 10 GHz. The MMA052PP45 amplifier features RF I/Os that are internally matched to 50 Ohm, which is ideal for any surface mount technology (SMT) assembly equipment.
