MACOM RF & MW Power Amplifier MAAP-015030-DIE

Description
Power Amplifier, 13 W, 8.5 - 11.75 GHz. The MAAP-015030 two stage 8.5 - 11.75 GHz GaAs MMIC power amplifier has a saturated pulsed output power of 41 dBm and a large signal gain of 21 dB. The power amplifier can be biased using a direct gate voltage or using an on chip gate bias circuit. This device is well suited for communication and radar applications.
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Description
Power Amplifier, 13 W, 8.5 - 11.75 GHz. The MAAP-015030 two stage 8.5 - 11.75 GHz GaAs MMIC power amplifier has a saturated pulsed output power of 41 dBm and a large signal gain of 21 dB. The power amplifier can be biased using a direct gate voltage or using an on chip gate bias circuit. This device is well suited for communication and radar applications.
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Suppliers

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Product
Description
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RF & MW Power Amplifier - MAAP-015030-DIE - Richardson RFPD
Downers Grove, IL, United States
RF & MW Power Amplifier
MAAP-015030-DIE
RF & MW Power Amplifier MAAP-015030-DIE
Power Amplifier, 13 W, 8.5 - 11.75 GHz. The MAAP-015030 two stage 8.5 - 11.75 GHz GaAs MMIC power amplifier has a saturated pulsed output power of 41 dBm and a large signal gain of 21 dB. The power amplifier can be biased using a direct gate voltage or using an on chip gate bias circuit. This device is well suited for communication and radar applications.

Power Amplifier, 13 W, 8.5 - 11.75 GHz. The MAAP-015030 two stage 8.5 - 11.75 GHz GaAs MMIC power amplifier has a saturated pulsed output power of 41 dBm and a large signal gain of 21 dB. The power amplifier can be biased using a direct gate voltage or using an on chip gate bias circuit. This device is well suited for communication and radar applications.

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category RF Amplifiers
Product Number MAAP-015030-DIE
Product Name RF & MW Power Amplifier
Amplifier Type Power Amplifier
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