Richardson RFPD Datasheets for Transistors

Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
Transistors: Learn more

Page: 1 2 3 4 5 6 7 10 18
Product Name Notes
40W, 16dB gain @ 175MHz. General purpose RF power MOSFET
flowNPC 1 with IGBT Trenchstop™ 5 - Higher performance, lower spend Equipped with the latest IGBT S5 & L5 chipsets, this module outperforms standard products with double the switching frequency...
Bonitron Braking Transistors are used with AC drives to allow full power braking and eliminate overvoltage faults. This permits controlled braking and dramatically shortens motor stopping time. The M3452 works...
Boost Si MOSFET/SiC diode
BUCK CHOPPER TRENCH + FIELD STOP IGBT POWER MODULE. Application: AC and DC Motor Control, Switched Mode Power Supplies. Features: Trench + Field Stop IGBT Technology, Kelvin Emitter for Easy...
Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology
CG2H40035 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40035, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
CGH25120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH25120F ideal for 2.3-2.7GHz WiMAX,...
CGH27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030S ideal for LTE,...
CGH40120F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
CGHV40180P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40180P, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of...
Designed for CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications. To be used in Class AB and Class C...
Designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range, in single ended configuration.
Dual-In-Line Package Intelligent Power Module. Transfer Molding Type. Insulated Type
Dual-In-Line Package Intelligent Power Module
ENGINEERING SAMPLES IN STOCK Building on its experience of high-performance, high-reliability devices for voltages above 3.3 kV, Hitachi ABB Power Grids has expanded its product portfolio by introducing a family...
Fast IGBT4 Module|•IGBT4 = 4. Generation (Trench) IGBT|•Vce(sat) with positive temperature coefficient|•High short circuit capability, self limiting to 6 x Icnom|•Soft switching 4. Generation CAL diode (CAL4)|Typical Applications:|•AC inverter drives|•UPS|•Electro...
Features High reactive power capability Low inductance layout Split output Enhanced LVRT capability Application Solar Inverters
Features High speed H-Bridge High efficiency MOS Enhanced body diode Integrated capacitors Thermistor Target Applications Power Supply Solar UPS Welding
Features High speed IGBT4 Low voltage drop Low leakage current Low switching losses SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature independent switching behavior Positive temperature coefficient on...
Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = +175C Fast and reliable...
Features SiC Power MOSFET Low RDS(on) High speed switching SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature independent switching behavior Positive temperature coefficient on VF Ultra-low...
Features Trench=Trenchgate technology VCEsat with positive temperature coefficient High short circuit capability, self limiting to 6 x Ic Applications AC inverter drives UPS Electronic welders
Features Ultrafast switching with SiC MOSFET and SiC boost diode Compact and low inductive design with integrated capacitors Target Applications Solar UPS
flowPIM 1 3rd gen, 1200V / 35A. Features: 3- rectifier, BRC, Inverter, NTC; Very compact housing, easy to route; IGBT4 / EmCon4 technology for low saturation losses and improved EMC...
flowPIM 2 3rd, 1200V/4A.
FULL - BRIDGE COOLMOS & TRENCH + FIELD STOP IGBT POWER MODULE.
FULL - BRIDGE NPT IGBT POWER MODULE. Application: Welding Converters, Switched Mode Power Supplies, Uninterruptible Power Supplies, Motor Control. Features: Non Punch Through (NPT) Fast IGBT, Kelvin Emitter for Easy...
Gallium Nitride 28V, 25W RF Power Transistor. Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology
IGBT Module|•Compact design|•One screw mounting|•Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB)|•High short circuit capability|•Low tail current with low temperature dependence|•Integrat ed PTC temperature sensor|Typical Applications:|•Switc...
ISOTOP BUCK CHOPPER TRENCH + FIELD STOP IGBT. Application: AC and DC Motor Control, Switched Mode Power Supplies. Features: Trench + Field Stop IGBT Technology, ISOTOP Package (SOT-227), Very Low...
N-Channel Enhancement-Mode Lateral MOSFET. This 63 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz.
N-Channel Enhancement-Mode Lateral MOSFETs. Designed for CDMA and multi-carrier base station applications with frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for all...
Phase leg Si COOLMOS/SiC diode
Phase leg Super Junction MOSFET Power Module
Phase Leg Trench + Field Stop IGBT®Power Module
Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode Power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly...
Power MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results...
Power MOS V® is a new generation of high voltage N-Channel enhancement mode Power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power...
Powerex IGBTMOD™ Modules are designed for use in high frequency applications; 30 kHz for hard switching applications and 60 to 70 kHz for soft switching applications. Each module consists of...
Powerex Intellimod™ Intelligent Power Modules are isolated base modules designed for power switching applications operating at frequencies to 20kHz. Built-in control circuits provide optimum gate drive and protection for the...
Product Details Topology: Booster Kelvin Emitter for improved switching performance Dual Booster Bypass Diode Integrated DC capacitor Temperature sensor Chip technology (main switch): SiC MOSFET Fast reverse recovery High speed...
Radar Power Transistors
RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET. Designed primarily for pulsed wideband applications with frequencies up to 150 MHz. Device is unmatched and is suitable for use in...
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs. RF Power transistors designed for applications operating at frequencies between 1200 and 1400 MHz, 1% to 12% duty cycle. These devices...
Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the...
SEMiX® 3s Trench IGBT Modules Features Homogeneous Si Trench = Trenchgate technology VCE(sat) with positive temperature coefficient High short circuit capability Typical Applications AC inverter drives UPS Electronic Welding Items...
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features 3rd generation SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High...
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features 3rd generation SiC MOSFET technology Optimized package with separate driver source pin High blocking voltage with low on-resistance High speed switching...
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features New C3M SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances New low impedance package...
SINGLE SWITCH WITH SERIES DIODES NPT IGBT POWER MODULE. Application: Zero Current Switching Resonant Mode. Features: Non Punch Through (NPT) Fast IGBT, Kelvin Emitter for Easy Drive, Very Low Stray...
The 0912GN-300V is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 19dB gain, 300 Watts of pulsed RF output power at 128us...
The 1012GN-800V is an internally matched, COMMON SOURCE, class AB GaN on SiC high power transistor specifically designed for 20us, 6% duty cycle radar systems. It is capable of providing...
The AAT4618 SmartSwitch is a member of Skyworks' Application Specific Power MOSFET™ (ASPM™) product family. It is a current limited P-channel MOSFET power switch designed for high-side load switching applications...
The ARF1510 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and...
The ARF460B comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65MHz. They have been...
The DC35-15-D3 is an unmatched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 18dB gain, 15 Watts of RF output power across the 30-3500 MHz...
The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage.
The GS-065-008-1-L is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology...
The GS66508P is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology®
The GTRA184602FC is a 460-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a...
The GTVA101K42EV is a 1400-watt GaN on SiC high electron mobility transistor (HEMT) for use in avionics transponder applications. It is a input matched, highefficiency device in a thermally-enhanced package...
The GTVA263202FC is a 340-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a...
The MAGX-100027-300CTP is high power GaN on Si HEMT device optimized for DC - 2.7 GHz frequency operation. The device supports both CW and pulsed operation with peak output power...
The Power MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications...
The PTRA087008NB is a 650-watt LDMOS FET. It is designed for use in multi-standard cellular power amplifier applications from 755 MHz to 805 MHz. Manufactured with Wolfspeed's advanced LDMOS process,...
The PTRA093818NF is a 415-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 925 to 960 MHz frequency band. Features include input matching, high gain...
The PTVA082407NF is a 240-watt LDMOS FET manufactured with Wolfspeed's 48-V LDMOS process. It is designed for use in multi-standard cellular power amplifier applications. It features a single ended design...
The PXAC241702FC is a 28 V LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2300 to 2400 MHz frequency band. Features...
The SD57045 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57045 is designed...
The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications.
The SUPERIOR GaN TP44100SG is a 90mOhm, 650V GaN power HEMT device. It can be directly driven from a standard 12V PWM controller, or the new generations of 6V PWM...
The Ultra Fast NPT - IGBT® family of products is the newest generation of planar IGBTs optimized for outstanding ruggedness and the best trade-off between conduction and switching losses.
The Ultra Fast NPT - IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Ultra Fast NPT-IGBT® offers superior ruggedness and ultrafast switching speed.
The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.
This 13.5 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 3600 to 3800...
This device is designed for use in VHF/UHF communications, VHF TV broadcast and aerospace applications as well as industrial, scientific and medical applications. The device is exceptionally rugged and exhibits...
This high ruggedness device is designed for use in high VSWR industrial, medical, broadcast, aerospace and mobile radio applications. It's unmatched input and output design allows for wide frequency range...
This RF power device is designed for pulse applications operating at frequencies from 1200 to 1400 MHz. The device is suitable for use in pulse applications and is ideal for...
Transfer Molding Type Insulated Type Main Features and Ratings 3 phase DC/AC inverter 1200V / 15A Built-in LPT-CSTBT (6th generation IGBT) Built-in bootstrap diodes with current limiting resistor Insulated transfer...
Transfer Molding Type Insulated Type Main Function and Ratings 3 phase DC/AC inverter 600V / 15A (CSTBT) N-side IGBT open emitter Built-in bootstrap diodes with current limiting resistor Application AC...
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling...
Vincotech has now extended the new industry-standard low-profile package for mid-power inverters by a sixpack configuration. Engineered mainly for industrial drives, solar power, and UPS applications, the VINcoPACK E3 raises...
Flat base type Copper base plate (Nickel-plating) RoHS Directive compliant Tin-plating pressfit terminals

Next >>