Richardson RFPD Datasheets for Transistors

Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
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Product Name Notes
Bonitron Braking Transistors are used with AC drives to allow full power braking and eliminate overvoltage faults. This permits controlled braking and dramatically shortens motor stopping time. The M3452 works...
Bonitron Braking Transistors are used with AC drives to allow full power braking and eliminate overvoltage faults. This permits controlled braking and dramatically shortens motor stopping time. The M3575T and...
Bonitron Braking Transistors are used with AC drives to allow full power brakingand eliminate overvoltage faults. This permits controlled braking and dramatically shortens motor stopping time. The M3452 works with...
Bonitron M3345 Line Regens are the energy efficient way to prevent overvoltage faults on AC Drives. By returning energy to the AC supply line, energy is reclaimed that would otherwise...
Combination Braking Modules are used with AC drives to allow full power braking and eliminate overvoltage faults. This permits controlled braking and dramatically shortens motor stopping time. Bonitron Combination Braking...
Features Converter, PFC, inverter in one housing New high speed IGBT for PFC One screw heatsink mounting Applications Embedded drives
Features IGBT in TRENCHSTOP RC technology Open emitter topology New ultra-compact housing Single-screw heat sink mounting Applications Embedded drives Industrial Drives
Features IGBT M7 with low VCEsat and improved EMC behavior Standard industrial housing Optimized Rth(j-s) with Phase Change Material Built-in NTC Application Industrial Drives
Features IGBT3 (600 V) technology Open emitter topology New ultra-compact housing Single-screw heat sink mounting Applications Dedicated design for motor drive
Features IGBT3 (600V) technology Open emitter topology New ultra-compact housing Single-screw heat sink mounting Applications Dedicated design for motor drive
Features IGBT4 (1200V) technology Open emitter topology New ultra-compact housing Single-screw heat sink mounting Applications Dedicated design for motor drive
Features Trench Fieldstop IGBT3 technology Standard industrial housing Optimized Rth(j-s) with Phase Change Material Built-in NTC Applications Industrial Drives
Features Trench Fieldstop IGBT3 technology Standard industrial housing Optimized Rth(j-s) with Phase Change Material Built-in NTC Applications Industrial Drives
Heavy Duty Braking Transistor Modules. Overvoltage Solutions for AC Drives. Braking Transistor and Braking Resistor modules are used with AC drives to eliminate overvoltage faults. The use of these modules...
Phase leg MOSFET Power Module
Power MOS 7® FREDFET. Power MOS 7® is a new generation of a low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with...
Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode Power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly...
Power MOS 7® MOSFET. Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power...
POWER MOS 8® is a high speed, highvoltage N-channel switch-mode power MOSFET. This 'FREDFET' version has adrain-source (body) diode that has been optimizedfor high reliability in ZVS phaseshifted bridge and...
Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low...
Power MOS 8™ is a high speed, high voltage N-channel switch-mode Power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS...
Power MOS V® is a new generation of high voltage N-Channel enhancement mode Power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power...
Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the...
Standard Duty Braking Transistor Modules. Overvoltage Solutions for AC Drives. Dynamic Braking Transistor and Dynamic Braking Resistor Modules are used with AC drives to dissipate regenerated energy and eliminate overvoltage...
The GS-065-004-1-L is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology...
The GS-065-008-1-L is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology...
The GS-065-011-1-L is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology...
The GS-065-060-5-T-A is an Automotive-grade 650 V enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates...
The GS-065-080-1-D is an enhancement mode gallium nitride (GaN) on silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems...
The GS-065-150-1-D is an enhancement mode gallium nitride (GaN) on silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems...
The GS61004B is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown, high switching frequency and high temperature operation. GaN Systems implements...
The GS61008P is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology®
The GS61008T is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology®
The GS66502B is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology®
The GS66504B is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology®
The GS66506T is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology®
The GS66508B is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology®
The GS66508P is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology®
The GS66508P is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology...
The GS66508T is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology®
The GS66516B is an enhancement mode gallium nitride (GaN) on silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems...
The GS66516T is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology®

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