Richardson RFPD Datasheets for Transistors

Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
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Product Name	Notes
RF Power Transistor -- D1002UK	40W, 16dB gain @ 175MHz. General purpose RF power MOSFET
Power IGBT Transistor -- FY07NIA150S5	flowNPC 1 with IGBT Trenchstop™ 5 - Higher performance, lower spend Equipped with the latest IGBT S5 & L5 chipsets, this module outperforms standard products with double the switching frequency...
Overvoltage Braking Transistor -- M3452-U150YB7-A	Bonitron Braking Transistors are used with AC drives to allow full power braking and eliminate overvoltage faults. This permits controlled braking and dramatically shortens motor stopping time. The M3452 works...
Silicon Carbide/Silicon Hybrid Modules -- APT58M50JCU2	Boost Si MOSFET/SiC diode
Power IGBT Transistor -- APTGT100SK170TG	BUCK CHOPPER TRENCH + FIELD STOP IGBT POWER MODULE. Application: AC and DC Motor Control, Switched Mode Power Supplies. Features: Trench + Field Stop IGBT Technology, Kelvin Emitter for Easy...
RF Power Transistor -- NPT25100	Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology
RF Power Transistor -- CG2H40035F	CG2H40035 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40035, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
RF Power Transistor -- CGH25120F	CGH25120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH25120F ideal for 2.3-2.7GHz WiMAX,...
RF Power Transistor -- CGH27030S	CGH27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030S ideal for LTE,...
RF Power Transistor -- CGH40120F	CGH40120F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
RF Power Transistor -- CGHV40180P	CGHV40180P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40180P, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of...
RF Power Transistor -- MRF6S27085HSR5	Designed for CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications. To be used in Class AB and Class C...
RF Power Transistor -- MRF136	Designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range, in single ended configuration.
Power IPM Transistor -- PSS20S71F6	Dual-In-Line Package Intelligent Power Module. Transfer Molding Type. Insulated Type
Power IPM Transistor -- PS22A72	Dual-In-Line Package Intelligent Power Module
Power IGBT Transistor -- 5SNG0900R120500	ENGINEERING SAMPLES IN STOCK Building on its experience of high-performance, high-reliability devices for voltages above 3.3 kV, Hitachi ABB Power Grids has expanded its product portfolio by introducing a family...
Power IGBT Transistor -- SKM150GB12T4	Fast IGBT4 Module\|•IGBT4 = 4. Generation (Trench) IGBT\|•Vce(sat) with positive temperature coefficient\|•High short circuit capability, self limiting to 6 x Icnom\|•Soft switching 4. Generation CAL diode (CAL4)\|Typical Applications:\|•AC inverter drives\|•UPS\|•Electro...
Power IGBT Transistor -- 10-PY12NMA160SH	Features High reactive power capability Low inductance layout Split output Enhanced LVRT capability Application Solar Inverters
Power IGBT Transistor -- PZ074PA080CR	Features High speed H-Bridge High efficiency MOS Enhanced body diode Integrated capacitors Thermistor Target Applications Power Supply Solar UPS Welding
Power IGBT Transistor -- MSCGLQ50H120CTB	Features High speed IGBT4 Low voltage drop Low leakage current Low switching losses SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature independent switching behavior Positive temperature coefficient on...
Silicon Carbide MOSFETs -- MSC080SMA120B	Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = +175C Fast and reliable...
Silicon Carbide MOSFET Modules -- MSCSM120DDUM31C	Features SiC Power MOSFET Low RDS(on) High speed switching SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature independent switching behavior Positive temperature coefficient on VF Ultra-low...
Power IGBT Transistor -- SKM600GB126D	Features Trench=Trenchgate technology VCEsat with positive temperature coefficient High short circuit capability, self limiting to 6 x Ic Applications AC inverter drives UPS Electronic welders
Silicon Carbide MOSFET Modules -- F12B2A040MR	Features Ultrafast switching with SiC MOSFET and SiC boost diode Compact and low inductive design with integrated capacitors Target Applications Solar UPS
Power IGBT Transistor -- V23990P580A41-B Power IGBT Transistor -- V23990P580A41PM	flowPIM 1 3rd gen, 1200V / 35A. Features: 3- rectifier, BRC, Inverter, NTC; Very compact housing, easy to route; IGBT4 / EmCon4 technology for low saturation losses and improved EMC...
Power IGBT Transistor -- V23990P848A58PM	flowPIM 2 3rd, 1200V/4A.
Silicon Carbide/Silicon Hybrid Modules -- APTCV40H60CT1G	FULL - BRIDGE COOLMOS & TRENCH + FIELD STOP IGBT POWER MODULE.
Power IGBT Transistor -- APTGF25H120T3G	FULL - BRIDGE NPT IGBT POWER MODULE. Application: Welding Converters, Switched Mode Power Supplies, Uninterruptible Power Supplies, Motor Control. Features: Non Punch Through (NPT) Fast IGBT, Kelvin Emitter for Easy...
RF Power Transistor -- NPTB00025B	Gallium Nitride 28V, 25W RF Power Transistor. Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology
Power IGBT Transistor -- SK80GB063	IGBT Module\|•Compact design\|•One screw mounting\|•Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB)\|•High short circuit capability\|•Low tail current with low temperature dependence\|•Integrat ed PTC temperature sensor\|Typical Applications:\|•Switc...
Power IGBT Transistor -- APT50GT120JU3	ISOTOP BUCK CHOPPER TRENCH + FIELD STOP IGBT. Application: AC and DC Motor Control, Switched Mode Power Supplies. Features: Trench + Field Stop IGBT Technology, ISOTOP Package (SOT-227), Very Low...
RF Power Transistor -- AFT18P3504S2LR6	N-Channel Enhancement-Mode Lateral MOSFET. This 63 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz.
RF Power Transistor -- MRF8S19260HR5	N-Channel Enhancement-Mode Lateral MOSFETs. Designed for CDMA and multi-carrier base station applications with frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for all...
Silicon Carbide/Silicon Hybrid Modules -- APTC90AM60SCTG	Phase leg Si COOLMOS/SiC diode
Power MOSFET Transistor -- APTC60AM242G	Phase leg Super Junction MOSFET Power Module
Power IGBT Transistor -- APTGT75A60T1G	Phase Leg Trench + Field Stop IGBT®Power Module
Power FREDFET Transistor -- APT1003RBFLLG Power FREDFET Transistor -- APT8011JFLL	Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode Power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly...
Power IGBT Transistor -- APT36GA60B Power IGBT Transistor -- APT80GA60LD40	Power MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results...
Power FREDFET Transistor -- APT50M85JVFR Power MOSFET Transistor -- APT30M40JVR	Power MOS V® is a new generation of high voltage N-Channel enhancement mode Power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power...
Power IGBT Transistor -- CM300DY-24NFH	Powerex IGBTMOD™ Modules are designed for use in high frequency applications; 30 kHz for hard switching applications and 60 to 70 kHz for soft switching applications. Each module consists of...
Power IPM Transistor -- PM100CL1B060	Powerex Intellimod™ Intelligent Power Modules are isolated base modules designed for power switching applications operating at frequencies to 20kHz. Built-in control circuits provide optimum gate drive and protection for the...
Silicon Carbide MOSFET Modules -- FY12B2A040MR	Product Details Topology: Booster Kelvin Emitter for improved switching performance Dual Booster Bypass Diode Integrated DC capacitor Temperature sensor Chip technology (main switch): SiC MOSFET Fast reverse recovery High speed...
RF Power Transistor -- PH1214-110M RF Power Transistor -- PH2731-20M	Radar Power Transistors
RF Power Transistor -- MRF6VP11KGHSR6	RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET. Designed primarily for pulsed wideband applications with frequencies up to 150 MHz. Device is unmatched and is suitable for use in...
RF Power Transistor -- MRF6V14300HR5	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs. RF Power transistors designed for applications operating at frequencies between 1200 and 1400 MHz, 1% to 12% duty cycle. These devices...
Power BJT Transistor -- MAX2601ESA+ Power BJT Transistor -- MAX2601ESA+T Power FREDFET Transistor -- APT100D60BG Power FREDFET Transistor -- APT5015SVFRG Power FREDFET Transistor -- APTM100H18FG Power IGBT Transistor -- 10-EZ126PA035SC Power IGBT Transistor -- 10-FY07NIA200RG Power IGBT Transistor -- 10-FZ12PMA015M7 Power IGBT Transistor -- 10-FZ12PNA010M7 Power IGBT Transistor -- 10-PG06PPA030LJ Power IGBT Transistor -- 10-PG12NAC00903 Power IGBT Transistor -- 10-PY07BVA030RW Power IGBT Transistor -- 10-PY12NMB030SM Power IGBT Transistor -- 10-PZ07BIA030RW Power IGBT Transistor -- 5SNA1200G450350 Power IGBT Transistor -- 5SNE2400E170300 Power IGBT Transistor -- 5SNG0150Q170300 Power IGBT Transistor -- 80-M3166BA14040 Power IGBT Transistor -- APT75GN120LG Power IGBT Transistor -- APTGF50H60T2G Power IGBT Transistor -- APTGLQ150H120G Power IGBT Transistor -- APTGT200A120G Power IGBT Transistor -- APTGT300DU60G Power IGBT Transistor -- APTGT300SK170G Power IGBT Transistor -- APTGT600SK60G Power IGBT Transistor -- APTGT600U170D4G Power IGBT Transistor -- APTGTQ50VDA65TX Power IGBT Transistor -- APTGV100H60T3G Power IGBT Transistor -- CM1000HC-66R Power IGBT Transistor -- CM100MXUB-13T1 Power IGBT Transistor -- CM100MXUC-24T Power IGBT Transistor -- CM100RX24T#330G Power IGBT Transistor -- CM150MXUD-24T Power IGBT Transistor -- CM2400HC-34N Power IGBT Transistor -- CM300DY34T#330G Power IGBT Transistor -- CM35MXA-24S Power IGBT Transistor -- CM600HG-130X Power IGBT Transistor -- E212PMA025M7 Power IGBT Transistor -- EZ12NMA080SH03 Power IGBT Transistor -- F106R6A030SB Power IGBT Transistor -- F206NIA200SA Power IGBT Transistor -- F212PMA050M7 Power IGBT Transistor -- FT07NIB300S503 Power IGBT Transistor -- FY07NIB200RG Power IGBT Transistor -- FZ12PMA015M7 Power IGBT Transistor -- M012PNB008SC Power IGBT Transistor -- M1126PA010M7 Power IGBT Transistor -- M1126PA015M7 Power IGBT Transistor -- M112PMA015M7 Power IGBT Transistor -- M2126PA035M7/5A Power IGBT Transistor -- M2126PA050M7 Power IGBT Transistor -- M312PMA050M7-5A Power IGBT Transistor -- M312PMA050M75AB Power IGBT Transistor -- M3166BA140SC02 Power IGBT Transistor -- MSCGL40X120T3AG Power IGBT Transistor -- SEMIX305MLI12E4 Power IGBT Transistor -- SEMIX402GB066HS Power IGBT Transistor -- SEMIX405TMLI12E Power IGBT Transistor -- SEMIX603GB12E4S Power IGBT Transistor -- SK80TMLI12F4TP Power IGBT Transistor -- SKIIP39MLI10L7H Power IGBT Transistor -- SKIIP39MLI10S7H Power IGBT Transistor -- SKIM201MLI07E4 Power IGBT Transistor -- SKM1200MLI12TE4 Power IGBT Transistor -- SKM200GAR17E4 Power IGBT Transistor -- SKM300GB17E4 Power IGBT Transistor -- V23990-K220-A41 Power IGBT Transistor -- V23990-P367-FPM Power IGBT Transistor -- V23990-P543-C28 Power IGBT Transistor -- V23990-P543-C29 Power IGBT Transistor -- V23990-P546-C29 Power IGBT Transistor -- V23990K209A1BPM Power IGBT Transistor -- V23990K209APM Power IGBT Transistor -- V23990K420A405A Power IGBT Transistor -- V23990K427A40PM Power IGBT Transistor -- V23990K429A405A Power IGBT Transistor -- V23990K430F60PM Power IGBT Transistor -- V23990K438F60PM Power IGBT Transistor -- V23990P433FPM Power IGBT Transistor -- V23990P545A38PM Power IGBT Transistor -- V23990P546A20PM Power IGBT Transistor -- V23990P546A21PM Power IGBT Transistor -- V23990P546C38PM Power IGBT Transistor -- V23990P567F10PM Power IGBT Transistor -- V23990P589A418M Power IGBT Transistor -- V23990P630A40PM Power IGBT Transistor -- V23990P718GPM Power IGBT Transistor -- V23990P718H10PM Power IGBT Transistor -- V23990P719GPM Power IGBT Transistor -- V23990P760APM Power IGBT Transistor -- V23990P767APM Power IGBT Transistor -- V23990P767APM-B Power IGBT Transistor -- V23990P840C59PM Power IGBT Transistor -- V23990P848A48PM Power IGBT Transistor -- W212NMA400SC03P Power IGBT Transistor -- W212NMC400SH Power IGBT Transistor -- W424NIA800SH Power IGBT Transistor -- W624N34A1K2SC Power IPM Transistor -- PM150RL1A120#35 Power IPM Transistor -- PM200RG1C065 Power IPM Transistor -- PM50CG1AP120 Power IPM Transistor -- PM75CG1B065 Power IPM Transistor -- PM75RG1A065 Power IPM Transistor -- PSS05SA2FT Power IPM Transistor -- PSS35SA2FT Power IPM Transistor -- PSS50MC1F6 Power MOSFET Transistor -- APT5010JN Power MOSFET Transistor -- APTM100A13DG Power MOSFET Transistor -- APTM100UM45DAG Power MOSFET Transistor -- MSCC60VRM45TAPG Power MOSFET Transistor -- WMF04N70C2 Power MOSFET Transistor -- WMK14N65C2 Power MOSFET Transistor -- WMK16N65FD Power MOSFET Transistor -- WMK20N65C2 Power MOSFET Transistor -- WML10N65C2 Power MOSFET Transistor -- WML16N70C2 Power MOSFET Transistor -- WML26N60C2 Power MOSFET Transistor -- WML38N60FD Power MOSFET Transistor -- WML38N65FD Power MOSFET Transistor -- WMM06N80M3 Power MOSFET Transistor -- WMM20N60C2 Power MOSFET Transistor -- WMM20N65C2 Power MOSFET Transistor -- WMN07N70C2 Power MOSFET Transistor -- WMN15N80M3 Power MOSFET Transistor -- WMO14N70C2 Power MOSFET Transistor -- WMO18P04T1 Power MOSFET Transistor -- WMP10N60C2 Power MOSFET Transistor -- WMP20N60C2 RF Power Transistor -- 1214GN-50E RF Power Transistor -- 2N2857CSM RF Power Transistor -- A2V09H400-04SR3 RF Power Transistor -- ARF468AG RF Power Transistor -- D2005UK RF Power Transistor -- D2012UK RF Power Transistor -- D2201UK RF Power Transistor -- D2225UK RF Power Transistor -- DMD1020 RF Power Transistor -- DU2880T RF Power Transistor -- GTRA412852FC-V1 RF Power Transistor -- MRF454MP RF Power Transistor -- MRF8VP13350NR5 RF Power Transistor -- SRFE6VP61K25NR6 RF Power Transistor -- UF2810P RF Small Signal Transistor Bipolar/HBT -- 2N2219A-JANS RF Small Signal Transistor Bipolar/HBT -- 2N2907ACSM RF Small Signal Transistor Bipolar/HBT -- 2N5667S RF Small Signal Transistor Bipolar/HBT -- BFU550WF RF Small Signal Transistor Bipolar/HBT -- BFU550XRR RF Small Signal Transistor Bipolar/HBT -- BFU730F-115 RF Small Signal Transistor Bipolar/HBT -- BUY47-QR-B RF Small Signal Transistor Bipolar/HBT -- NE85634-A RF Small Signal Transistor Bipolar/HBT -- NE856M02 Silicon Carbide MOSFET Modules -- FZ062TA099FH03 Silicon Carbide MOSFET Modules -- MSCSM120AM11CT3 Silicon Carbide MOSFET Modules -- MSCSM120AM16CTX Silicon Carbide MOSFET Modules -- MSCSM70AM10CT3A Silicon Carbide MOSFET Modules -- PH12NAC008MR02 Silicon Carbide MOSFETs -- MSC035SMAS170S Silicon Carbide/Silicon Hybrid Modules -- F006PPA020SB01 Silicon Carbide/Silicon Hybrid Modules -- F006PPA020SB03 Silicon Carbide/Silicon Hybrid Modules -- FZ06BIA045FH02 Silicon Carbide/Silicon Hybrid Modules -- FZ06NRA069FP02 Silicon Carbide/Silicon Hybrid Modules -- PT10NIA375F9 Silicon Carbide/Silicon Hybrid Modules -- PZ07BIA030SM01	Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the...
Power IGBT Transistor -- SEMIX703GB126HD	SEMiX® 3s Trench IGBT Modules Features Homogeneous Si Trench = Trenchgate technology VCE(sat) with positive temperature coefficient High short circuit capability Typical Applications AC inverter drives UPS Electronic Welding Items...
Silicon Carbide MOSFETs -- C3M0040120K	Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features 3rd generation SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High...
Silicon Carbide MOSFETs -- C3M0040120J1	Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features 3rd generation SiC MOSFET technology Optimized package with separate driver source pin High blocking voltage with low on-resistance High speed switching...
Silicon Carbide MOSFETs -- C3M0065090J-TR	Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features New C3M SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances New low impedance package...
Power IGBT Transistor -- APTGF200U120DG	SINGLE SWITCH WITH SERIES DIODES NPT IGBT POWER MODULE. Application: Zero Current Switching Resonant Mode. Features: Non Punch Through (NPT) Fast IGBT, Kelvin Emitter for Easy Drive, Very Low Stray...
RF Power Transistor -- 0912GN-300V	The 0912GN-300V is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 19dB gain, 300 Watts of pulsed RF output power at 128us...
RF Power Transistor -- 1012GN-800V	The 1012GN-800V is an internally matched, COMMON SOURCE, class AB GaN on SiC high power transistor specifically designed for 20us, 6% duty cycle radar systems. It is capable of providing...
Power MOSFET Transistor -- AAT4618IGV051T1	The AAT4618 SmartSwitch is a member of Skyworks' Application Specific Power MOSFET™ (ASPM™) product family. It is a current limited P-channel MOSFET power switch designed for high-side load switching applications...
RF Power Transistor -- ARF1510	The ARF1510 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and...
RF Power Transistor -- ARF460BG	The ARF460B comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65MHz. They have been...
RF Power Transistor -- DC35GN-15-D3	The DC35-15-D3 is an unmatched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 18dB gain, 15 Watts of RF output power across the 30-3500 MHz...
Power IGBT Transistor -- APT50GF120LRG	The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage.
GaN Power Transistor -- GS-065-008-1-L-	The GS-065-008-1-L is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology...
GaN Power Transistor -- GS66508P-E05-B	The GS66508P is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology®
RF Power Transistor -- GTRA184602FC-V1	The GTRA184602FC is a 460-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a...
RF Power Transistor -- GTVA101K42EV-V1	The GTVA101K42EV is a 1400-watt GaN on SiC high electron mobility transistor (HEMT) for use in avionics transponder applications. It is a input matched, highefficiency device in a thermally-enhanced package...
RF Power Transistor -- GTVA263202FC-V1	The GTVA263202FC is a 340-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a...
RF Power Transistor -- MAGX-100027300C	The MAGX-100027-300CTP is high power GaN on Si HEMT device optimized for DC - 2.7 GHz frequency operation. The device supports both CW and pulsed operation with peak output power...
Power IGBT Transistor -- APT45GP120J	The Power MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications...
RF Power Transistor -- PTRA087008NB-V1	The PTRA087008NB is a 650-watt LDMOS FET. It is designed for use in multi-standard cellular power amplifier applications from 755 MHz to 805 MHz. Manufactured with Wolfspeed's advanced LDMOS process,...
RF Power Transistor -- PTRA093818NF-V1	The PTRA093818NF is a 415-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 925 to 960 MHz frequency band. Features include input matching, high gain...
RF Power Transistor -- PTVA082407NF-V1	The PTVA082407NF is a 240-watt LDMOS FET manufactured with Wolfspeed's 48-V LDMOS process. It is designed for use in multi-standard cellular power amplifier applications. It features a single ended design...
RF Power Transistor -- PXAC241702FC-V1	The PXAC241702FC is a 28 V LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2300 to 2400 MHz frequency band. Features...
RF Power Transistor -- SD57045	The SD57045 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57045 is designed...
Silicon Carbide MOSFETs -- MSC060SMA070B	The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications.
GaN Power Transistor -- TP44100SG	The SUPERIOR GaN TP44100SG is a 90mOhm, 650V GaN power HEMT device. It can be directly driven from a standard 12V PWM controller, or the new generations of 6V PWM...
Power IGBT Transistor -- APT25GR120B Power IGBT Transistor -- APT25GR120S Power IGBT Transistor -- APT50GR120B2	The Ultra Fast NPT - IGBT® family of products is the newest generation of planar IGBTs optimized for outstanding ruggedness and the best trade-off between conduction and switching losses.
Power IGBT Transistor -- APT70GR120JD60	The Ultra Fast NPT - IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Ultra Fast NPT-IGBT® offers superior ruggedness and ultrafast switching speed.
RF Power Transistor -- VRF154FL	The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.
RF Power Transistor -- A5G37H110NT4	This 13.5 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 3600 to 3800...
RF Power Transistor -- MRF101BN	This device is designed for use in VHF/UHF communications, VHF TV broadcast and aerospace applications as well as industrial, scientific and medical applications. The device is exceptionally rugged and exhibits...
RF Power Transistor -- MRFE6VP61K25GN6	This high ruggedness device is designed for use in high VSWR industrial, medical, broadcast, aerospace and mobile radio applications. It's unmatched input and output design allows for wide frequency range...
RF Power Transistor -- MMRF1314HSR5	This RF power device is designed for pulse applications operating at frequencies from 1200 to 1400 MHz. The device is suitable for use in pulse applications and is ideal for...
Power IPM Transistor -- PSS15SA2FT	Transfer Molding Type Insulated Type Main Features and Ratings 3 phase DC/AC inverter 1200V / 15A Built-in LPT-CSTBT (6th generation IGBT) Built-in bootstrap diodes with current limiting resistor Insulated transfer...
Power IPM Transistor -- PSS15S92F6-AG	Transfer Molding Type Insulated Type Main Function and Ratings 3 phase DC/AC inverter 600V / 15A (CSTBT) N-side IGBT open emitter Built-in bootstrap diodes with current limiting resistor Application AC...
Power IGBT Transistor -- APT150GN120JDQ4 Power IGBT Transistor -- APT25GN120SG	Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling...
Power IGBT Transistor -- A0-VS126PA150M7	Vincotech has now extended the new industry-standard low-profile package for mid-power inverters by a sixpack configuration. Engineered mainly for industrial drives, solar power, and UPS applications, the VINcoPACK E3 raises...
Power IGBT Transistor -- CM100TXP-13T	Flat base type Copper base plate (Nickel-plating) RoHS Directive compliant Tin-plating pressfit terminals

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