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Richardson RFPD Datasheets for Transistors

Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
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Product Name Notes
Features C3M SiC MOSFET technology Standard industrial housing Low inductive design Optimized Rth(j-s) with Phase Change Material Built-in NTC Applications Charging Stations Energy Storage Systems Power Supply Solar Inverters Welding...
flowNPC 0 with IGBT Trenchstop™ 5 - Higher performance, lower spend Equipped with the latest IGBT S5 & L5 chipsets, this module outperforms standard products with double the switching frequency...
flowNPC 1 with IGBT Trenchstop™ 5 - Higher performance, lower spend Equipped with the latest IGBT S5 & L5 chipsets, this module outperforms standard products with double the switching frequency...
Faster, cooler and even more efficient, this new power module is the first-choice H-bridge for switching frequencies up to 400 kHz. Featuring a 900 V SiC MOSFET, it tops 1200...
Features *PS: 45A parallel switch (40A PT and 99mΩ) neutral point clamped inverter reactive power capability SiC buck diode low inductance layout Applications Solar Inverter UPS
Features 3x Booster with SiC MOSFET and SiC Diode Ultrafast switching Low inductive design Target Applications Solar UPS
Features 3xAdvanced Neutral Boost PFC Integrated DC capacitor Kelvin Emitter for improved switching performance Integrated sixpack with open emitter Built-in NTC Applications Embedded Drives Heat Pumps HVAC Industrial Drives
Features 900 V, SiC MOS Switching frequency up to 400 kHz Suitable for hard switching/soft switching Increased power density NTC Target Applications Power Supply Special Application Welding & Cutting
Features 900 V, SiC MOS Switching frequency up to 400 kHz Suitable for hard switching/soft switching Increased power density NTC Target Applications Power Supply Special Application Welding
Features C3M SiC MOSFET technology Standard industrial housing Low inductive design Optimized Rth(j-s) with Phase Change Material Built-in NTC Applications Charging Stations Energy Storage Systems Power Supply Solar Inverters Welding...
Features Compact and low inductive design High frequency SiC MOSFET Integrated NTC Kelvin Emitter for improved switching performance Open Emitter configuration Temperature sensor High Blocking Voltage with low drain source...
Features Compact flow 0 housing Trench Fieldstop IGBT4 technology Compact and low inductance layout Built-in NTC Applications Motor Drives Power Generation
Features Compact Flow 1 housing Trench Fieldstop IGBT4 Technology Compact and low Inductance Design Built-in NTC Applications Motor Drives Power Generation
Features Compact Flow 1 housing Trench Fieldstop IGBT4 technology Compact and Low Inductive Design Built-in NTC Applications Motor Drives Power Generation
Features Converter, PFC, inverter in one housing New high speed IGBT for PFC One screw heatsink mounting Applications Embedded drives
Features CreeTM Silicon Carbide Power MOSFET CreeTM Silicon Carbide Power Schottky Diode Dual Boost Topology Ultra Low Inductance with Integrated DC-capacitors Extremely Fast Switching with No ""Tail"" Current...
Features CreeTM Silicon Carbide Power MOSFET CreeTM Silicon Carbide Power Schottky Diode MNPC Topology with Splitted Output Ultra Low Inductance with Integrated DC-capacitors Extremely Fast Switching with No...
Features H-bridge or 2x half-bridge SiC MOS fsw up to 250kHz Thermistor Target Applications Power Supply
Features High Efficiency three-level half-bridge High efficiency IGBT Neutral point-Clamped inverter Clip-In PCB mounting Low Inductance Layout Applications Solar UPS
Features High efficient and compact symmetric booster High switching frequency and low inductive design Low losses with TRENCHSTOP 5 IGBT Integrated temperature sensor Applications Power Supply Solar Inverters
Features High frequency SiC MOSFET Compact and low inductive design Target Applications Solar
Features High integration level of Rectifier, PFC and Inverter High-efficiency Input Rectifier Dual PFC with high efficiency, fast IGBT H5 + ultra-fast Si Diode High efficiency H-Bridge inverter with fast...
Features High integration level of Rectifier, PFC and Inverter High-efficiency Input Rectifier Wide input voltage range rated PFC Dual PFC with high efficiency, fast IGBT H5 + ultra-fast Si Diode...
Features High reactive power capability Low inductance layout Split output Enhanced LVRT capability Application Solar Inverters
Features High speed H-Bridge High efficiency MOS Technology Enhanced body diode Integrated capacitors Thermistor Flexible open emitter topology Applications Power Supply Solar UPS
Features High speed H-Bridge High efficiency MOS Enhanced body diode Integrated capacitors Thermistor Target Applications Power Supply Solar UPS Welding
Features High-efficient rectifier High-efficient IGBT H5 + Stealth 2 Diode Ultra-fast switching speed Integrated capacitors Thermistor Target Applications SMPS Welding
Features IGBT in TRENCHSTOP RC technology Open emitter topology New ultra-compact housing Single-screw heat sink mounting Applications Embedded drives Industrial Drives
Features IGBT M7 with low VCEsat and improved EMC behavior Standard industrial housing Optimized Rth(j-s) with Phase Change Material Built-in NTC Application Industrial Drives
Features IGBT M7 with low VCEsat and improved EMC behavior Standard industrial housing Optimized Rth(j-s) with Phase Change Material Built-in NTC Applications Industrial Drives
Features IGBT M7 with low VCEsat and improved EMC behavior Standard industrial housing Optimized Rth(j-s) with Phase Change Material Built-in NTC Target Applications Industrial Drives
Features IGBT Mitsubishi gen 7 technology with low VCEsat and improved EMC behavior Standard industrial package Built-in NTC Applications Industrial Drives UPS
Features IGBT Mitsubishi gen 7 technology with low VCEsat and improved EMC behavior Standard industrial package Built-in NTC Target Applications Industrial Drives UPS
Features IGBT3 (600 V) technology Open emitter topology New ultra-compact housing Single-screw heat sink mounting Applications Dedicated design for motor drive
Features IGBT3 (600V) technology Open emitter topology New ultra-compact housing Single-screw heat sink mounting Applications Dedicated design for motor drive
Features IGBT4 (1200V) technology Open emitter topology New ultra-compact housing Single-screw heat sink mounting Applications Dedicated design for motor drive
Features Mixed voltage component topology Neutral point clamped inverter Reactive power capability Low inductance layout Target Applications Solar Inverter UPS
Features Neutral Point Clamped Topology (I-Type) 4 quadrant operation, very high speed Integrated DC capacitor and temperature sensor Kelvin Emitter for improved switching performance Solder pins Applications Power Supply Solar...
Features NPC inverter topology Optimized for full rated bi-directional usage (4 quadrant operation) High-speed IGBT in all switch positions NTC Low inductive design with integrated DC capacitor Flow1-12mm package Applications...
Features NPC inverter topology Optimized high efficient inverter H5 IGBT in outer and L5 in inner switch NTC Low inductive design with integrated DC capacitor Flow1-12mm package Applications Solar Inverter...
Features Rohm™ Silicon Carbide Power MOSFET Rohm™ Silicon Carbide Power Schottky Diode MNPC Topology with Splitted Output Ultra Low Inductance with Integrated DC-capacitors Extremely Fast Switching with No ""Tail"" Current...
Features RohmTM SiC-Power MOSFET´s and Schottky Diodes Dual Boost Topology Ultra Low Inductance with Integrated DC-capacitors Extremely Fast Switching with No ""Tail"" Current Solderless Press-fit Mounting Technology Temperature sensor...
Features SiC-Power MOSFET´s and Schottky Diodes 3 channel boost topology Ultra Low Inductance with integrated DC-capacitors Switching frequency >100kHz Temperature sensor Target Applications solar inverter Power Supply
Features SiC-Power MOSFET´s and Schottky Diodes 3 phase inverter topology with split output Improved switching behavior (reduced turn on energy and X-conduction) Ultra Low Inductance with integrated DC-capacitors Switching frequency...
Features Sixpack with three separated legs Solderless Press-fit Mounting Technology Target Applications Battery Charger
Features Split Advanced NPC topology Ultra-high switching frequency with SiC MOSFETs Split topology for better thermal performance No x-conduction at high frequencies Target Applications Solar Inverter
Features Symmetric Boost for 1500Vdc applications Full SiC for ultra high speed frequencies Target Applications Solar Inverters
Features Symmetric Boost for 1500Vdc applications Latest IGBT technology for high speed frequencies Low inductance package Integrated NTC Cost effective alternative to L869L08 Same package and pin-out as L869L08 Target...
Features Trench Fieldstop IGBT3 technology Standard industrial housing Optimized Rth(j-s) with Phase Change Material Built-in NTC Applications Industrial Drives
Features Trench Fieldstop IGBT3 technology Standard industrial housing Optimized Rth(j-s) with Phase Change Material Built-in NTC Applications Industrial Drives
Features Trenchstop™ IGBT3 technology Standard industrial housing Optimized Rth(j-s) with Phase Change Material Built-in NTC Target Applications Industrial Drives
Features TrenchstopTM IGBT3 technology Standard industrial housing Optimized Rth(j-s) with Phase Change Material Built-in NTC Target Applications Industrial Drives
Features Ultrafast switching with SiC MOSFET and SiC boost diode Compact and low inductive design with integrated capacitors Target Applications Solar UPS
Features Wolfspeed(Cree)™ Silicon Carbide Power MOSFET, C2M™ MOSFET Technology Sixpack with three separated legs Solderless Press-fit Mounting Technology Target Applications Battery Charger
flowBOOST 0 Dual. Features: High efficiency symmetric boost; Ultra fast switching frequency; Low Inductance Layout; Tandem to FZ06NIA045FH and FZ06NIA045FH01. Applications: Neutral point solar iinverters.
Product Details Topology: Booster Kelvin Emitter for improved switching performance Dual Booster Bypass Diode Integrated DC capacitor Temperature sensor Chip technology (main switch): SiC MOSFET Fast reverse recovery High speed...
Richardson RFPD is over-stocked on this Vincotech Silicon Carbide module and willing to negotiate on pricing to support your requirement. These are all original manufacturers’ modules. Contact us for samples...
Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the...
The 0912GN-250V is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 18dB gain, 250 Watts of pulsed RF output power at 128...
The 0912GN-300V is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 19dB gain, 300 Watts of pulsed RF output power at 128us...
The 0912GN-500LV is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 16dB gain, 500 Watts of pulsed RF output power at 450μs...
The 0912GN-650V is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 17dB gain, 650 Watts of pulsed RF output power at 128μs...
The 1011GN-1200V is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 18.5 dB gain, 1200 Watts of pulsed RF output power at...
The 1011GN-125E is an internally matched, common source, Class AB, GaN on SiC HEMT transmitter driver transistor capable of providing over 18.5 dB power gain and 125 W of pulsed...
The 1011GN-125EL is an internally matched, common source, Class AB, GaN on SiC HEMT transmitter driver transistor capable of providing over 18.5 dB power gain and 125 W of pulsed...
The 1012GN-800V is an internally matched, COMMON SOURCE, class AB GaN on SiC high power transistor specifically designed for 20us, 6% duty cycle radar systems. It is capable of providing...
The 1030/1090MHz, 50V or 52V 1011GN-1600VG is an internally matched, common source, class AB, GaN on SiC HEMT transistor capable of providing greater than 1600 Watts of pulsed output power...
The new fastPACK SiC E1 has been developed with the aim to make the EV offboard charger designs faster, smaller and more efficient. The module is based on latest 650V...
The new flowBOOST 1 symmetric module packaged in the low inductive flow 1 housing achieves the performance you need to downsize bulky transformers and DC link capacitors. Engineered to deliver...
The new flowPACK 1 1200 V sixpack features tandem diode technology and a high-speed IGBT. These semiconductor modules are comprised of several IGBTs to cover currents ranging up to 75...
The new flowPACK 1 SiC is faster than 1200 V SiC MOSFETs, safer than 650 V MOSFETs and perfect for charging stations that require soft-switching for LLC topology. This 3xhalf-bridge...
Vincotech's new flowPACK 1 module features high-speed IGBTs and soft-switching diodes for improved efficiency and very fast performance. Engineers seeking to streamline their designs for servo applications and line converters...

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