Richardson RFPD Datasheets for Transistors
Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
Transistors: Learn more
Product Name | Notes |
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40W, 16dB gain @ 175MHz. General purpose RF power MOSFET | |
flowNPC 1 with IGBT Trenchstop™ 5 - Higher performance, lower spend Equipped with the latest IGBT S5 & L5 chipsets, this module outperforms standard products with double the switching frequency... | |
Bonitron Braking Transistors are used with AC drives to allow full power braking and eliminate overvoltage faults. This permits controlled braking and dramatically shortens motor stopping time. The M3452 works... | |
Boost Si MOSFET/SiC diode | |
BUCK CHOPPER TRENCH + FIELD STOP IGBT POWER MODULE. Application: AC and DC Motor Control, Switched Mode Power Supplies. Features: Trench + Field Stop IGBT Technology, Kelvin Emitter for Easy... | |
Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology | |
CG2H40035 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40035, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of... | |
CGH25120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH25120F ideal for 2.3-2.7GHz WiMAX,... | |
CGH27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030S ideal for LTE,... | |
CGH40120F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of... | |
CGHV40180P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40180P, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of... | |
Designed for CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications. To be used in Class AB and Class C... | |
Designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range, in single ended configuration. | |
Dual-In-Line Package Intelligent Power Module. Transfer Molding Type. Insulated Type | |
Dual-In-Line Package Intelligent Power Module | |
ENGINEERING SAMPLES IN STOCK Building on its experience of high-performance, high-reliability devices for voltages above 3.3 kV, Hitachi ABB Power Grids has expanded its product portfolio by introducing a family... | |
Fast IGBT4 Module|•IGBT4 = 4. Generation (Trench) IGBT|•Vce(sat) with positive temperature coefficient|•High short circuit capability, self limiting to 6 x Icnom|•Soft switching 4. Generation CAL diode (CAL4)|Typical Applications:|•AC inverter drives|•UPS|•Electro... | |
Features High reactive power capability Low inductance layout Split output Enhanced LVRT capability Application Solar Inverters | |
Features High speed H-Bridge High efficiency MOS Enhanced body diode Integrated capacitors Thermistor Target Applications Power Supply Solar UPS Welding | |
Features High speed IGBT4 Low voltage drop Low leakage current Low switching losses SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature independent switching behavior Positive temperature coefficient on... | |
Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = +175C Fast and reliable... | |
Features SiC Power MOSFET Low RDS(on) High speed switching SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature independent switching behavior Positive temperature coefficient on VF Ultra-low... | |
Features Trench=Trenchgate technology VCEsat with positive temperature coefficient High short circuit capability, self limiting to 6 x Ic Applications AC inverter drives UPS Electronic welders | |
Features Ultrafast switching with SiC MOSFET and SiC boost diode Compact and low inductive design with integrated capacitors Target Applications Solar UPS | |
flowPIM 1 3rd gen, 1200V / 35A. Features: 3- rectifier, BRC, Inverter, NTC; Very compact housing, easy to route; IGBT4 / EmCon4 technology for low saturation losses and improved EMC... | |
flowPIM 2 3rd, 1200V/4A. | |
FULL - BRIDGE COOLMOS & TRENCH + FIELD STOP IGBT POWER MODULE. | |
FULL - BRIDGE NPT IGBT POWER MODULE. Application: Welding Converters, Switched Mode Power Supplies, Uninterruptible Power Supplies, Motor Control. Features: Non Punch Through (NPT) Fast IGBT, Kelvin Emitter for Easy... | |
Gallium Nitride 28V, 25W RF Power Transistor. Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology | |
IGBT Module|•Compact design|•One screw mounting|•Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB)|•High short circuit capability|•Low tail current with low temperature dependence|•Integrat ed PTC temperature sensor|Typical Applications:|•Switc... | |
ISOTOP BUCK CHOPPER TRENCH + FIELD STOP IGBT. Application: AC and DC Motor Control, Switched Mode Power Supplies. Features: Trench + Field Stop IGBT Technology, ISOTOP Package (SOT-227), Very Low... | |
N-Channel Enhancement-Mode Lateral MOSFET. This 63 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz. | |
N-Channel Enhancement-Mode Lateral MOSFETs. Designed for CDMA and multi-carrier base station applications with frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for all... | |
Phase leg Si COOLMOS/SiC diode | |
Phase leg Super Junction MOSFET Power Module | |
Phase Leg Trench + Field Stop IGBT®Power Module | |
Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode Power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly... | |
Power MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results... | |
Power MOS V® is a new generation of high voltage N-Channel enhancement mode Power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power... | |
Powerex IGBTMOD™ Modules are designed for use in high frequency applications; 30 kHz for hard switching applications and 60 to 70 kHz for soft switching applications. Each module consists of... | |
Powerex Intellimod™ Intelligent Power Modules are isolated base modules designed for power switching applications operating at frequencies to 20kHz. Built-in control circuits provide optimum gate drive and protection for the... | |
Product Details Topology: Booster Kelvin Emitter for improved switching performance Dual Booster Bypass Diode Integrated DC capacitor Temperature sensor Chip technology (main switch): SiC MOSFET Fast reverse recovery High speed... | |
Radar Power Transistors | |
RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET. Designed primarily for pulsed wideband applications with frequencies up to 150 MHz. Device is unmatched and is suitable for use in... | |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs. RF Power transistors designed for applications operating at frequencies between 1200 and 1400 MHz, 1% to 12% duty cycle. These devices... | |
Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the... | |
SEMiX® 3s Trench IGBT Modules Features Homogeneous Si Trench = Trenchgate technology VCE(sat) with positive temperature coefficient High short circuit capability Typical Applications AC inverter drives UPS Electronic Welding Items... | |
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features 3rd generation SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High... | |
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features 3rd generation SiC MOSFET technology Optimized package with separate driver source pin High blocking voltage with low on-resistance High speed switching... | |
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features New C3M SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances New low impedance package... | |
SINGLE SWITCH WITH SERIES DIODES NPT IGBT POWER MODULE. Application: Zero Current Switching Resonant Mode. Features: Non Punch Through (NPT) Fast IGBT, Kelvin Emitter for Easy Drive, Very Low Stray... | |
The 0912GN-300V is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 19dB gain, 300 Watts of pulsed RF output power at 128us... | |
The 1012GN-800V is an internally matched, COMMON SOURCE, class AB GaN on SiC high power transistor specifically designed for 20us, 6% duty cycle radar systems. It is capable of providing... | |
The AAT4618 SmartSwitch is a member of Skyworks' Application Specific Power MOSFET™ (ASPM™) product family. It is a current limited P-channel MOSFET power switch designed for high-side load switching applications... | |
The ARF1510 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and... | |
The ARF460B comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65MHz. They have been... | |
The DC35-15-D3 is an unmatched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 18dB gain, 15 Watts of RF output power across the 30-3500 MHz... | |
The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. | |
The GS-065-008-1-L is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology... | |
The GS66508P is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology® | |
The GTRA184602FC is a 460-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a... | |
The GTVA101K42EV is a 1400-watt GaN on SiC high electron mobility transistor (HEMT) for use in avionics transponder applications. It is a input matched, highefficiency device in a thermally-enhanced package... | |
The GTVA263202FC is a 340-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a... | |
The MAGX-100027-300CTP is high power GaN on Si HEMT device optimized for DC - 2.7 GHz frequency operation. The device supports both CW and pulsed operation with peak output power... | |
The Power MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications... | |
The PTRA087008NB is a 650-watt LDMOS FET. It is designed for use in multi-standard cellular power amplifier applications from 755 MHz to 805 MHz. Manufactured with Wolfspeed's advanced LDMOS process,... | |
The PTRA093818NF is a 415-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 925 to 960 MHz frequency band. Features include input matching, high gain... | |
The PTVA082407NF is a 240-watt LDMOS FET manufactured with Wolfspeed's 48-V LDMOS process. It is designed for use in multi-standard cellular power amplifier applications. It features a single ended design... | |
The PXAC241702FC is a 28 V LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2300 to 2400 MHz frequency band. Features... | |
The SD57045 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57045 is designed... | |
The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. | |
The SUPERIOR GaN TP44100SG is a 90mOhm, 650V GaN power HEMT device. It can be directly driven from a standard 12V PWM controller, or the new generations of 6V PWM... | |
The Ultra Fast NPT - IGBT® family of products is the newest generation of planar IGBTs optimized for outstanding ruggedness and the best trade-off between conduction and switching losses. | |
The Ultra Fast NPT - IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Ultra Fast NPT-IGBT® offers superior ruggedness and ultrafast switching speed. | |
The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion. | |
This 13.5 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 3600 to 3800... | |
This device is designed for use in VHF/UHF communications, VHF TV broadcast and aerospace applications as well as industrial, scientific and medical applications. The device is exceptionally rugged and exhibits... | |
This high ruggedness device is designed for use in high VSWR industrial, medical, broadcast, aerospace and mobile radio applications. It's unmatched input and output design allows for wide frequency range... | |
This RF power device is designed for pulse applications operating at frequencies from 1200 to 1400 MHz. The device is suitable for use in pulse applications and is ideal for... | |
Transfer Molding Type Insulated Type Main Features and Ratings 3 phase DC/AC inverter 1200V / 15A Built-in LPT-CSTBT (6th generation IGBT) Built-in bootstrap diodes with current limiting resistor Insulated transfer... | |
Transfer Molding Type Insulated Type Main Function and Ratings 3 phase DC/AC inverter 600V / 15A (CSTBT) N-side IGBT open emitter Built-in bootstrap diodes with current limiting resistor Application AC... | |
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling... | |
Vincotech has now extended the new industry-standard low-profile package for mid-power inverters by a sixpack configuration. Engineered mainly for industrial drives, solar power, and UPS applications, the VINcoPACK E3 raises... | |
Flat base type Copper base plate (Nickel-plating) RoHS Directive compliant Tin-plating pressfit terminals |
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