Richardson RFPD Datasheets for Transistors
Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
Transistors: Learn more
Product Name | Notes |
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Features C3M SiC MOSFET technology Standard industrial housing Low inductive design Optimized Rth(j-s) with Phase Change Material Built-in NTC Applications Charging Stations Energy Storage Systems Power Supply Solar Inverters Welding... | |
flowNPC 0 with IGBT Trenchstop™ 5 - Higher performance, lower spend Equipped with the latest IGBT S5 & L5 chipsets, this module outperforms standard products with double the switching frequency... | |
flowNPC 1 with IGBT Trenchstop™ 5 - Higher performance, lower spend Equipped with the latest IGBT S5 & L5 chipsets, this module outperforms standard products with double the switching frequency... | |
Faster, cooler and even more efficient, this new power module is the first-choice H-bridge for switching frequencies up to 400 kHz. Featuring a 900 V SiC MOSFET, it tops 1200... | |
Features *PS: 45A parallel switch (40A PT and 99mΩ) neutral point clamped inverter reactive power capability SiC buck diode low inductance layout Applications Solar Inverter UPS | |
Features 3x Booster with SiC MOSFET and SiC Diode Ultrafast switching Low inductive design Target Applications Solar UPS | |
Features 3xAdvanced Neutral Boost PFC Integrated DC capacitor Kelvin Emitter for improved switching performance Integrated sixpack with open emitter Built-in NTC Applications Embedded Drives Heat Pumps HVAC Industrial Drives | |
Features 900 V, SiC MOS Switching frequency up to 400 kHz Suitable for hard switching/soft switching Increased power density NTC Target Applications Power Supply Special Application Welding & Cutting | |
Features 900 V, SiC MOS Switching frequency up to 400 kHz Suitable for hard switching/soft switching Increased power density NTC Target Applications Power Supply Special Application Welding | |
Features C3M SiC MOSFET technology Standard industrial housing Low inductive design Optimized Rth(j-s) with Phase Change Material Built-in NTC Applications Charging Stations Energy Storage Systems Power Supply Solar Inverters Welding... | |
Features Compact and low inductive design High frequency SiC MOSFET Integrated NTC Kelvin Emitter for improved switching performance Open Emitter configuration Temperature sensor High Blocking Voltage with low drain source... | |
Features Compact flow 0 housing Trench Fieldstop IGBT4 technology Compact and low inductance layout Built-in NTC Applications Motor Drives Power Generation | |
Features Compact Flow 1 housing Trench Fieldstop IGBT4 Technology Compact and low Inductance Design Built-in NTC Applications Motor Drives Power Generation | |
Features Compact Flow 1 housing Trench Fieldstop IGBT4 technology Compact and Low Inductive Design Built-in NTC Applications Motor Drives Power Generation | |
Features Converter, PFC, inverter in one housing New high speed IGBT for PFC One screw heatsink mounting Applications Embedded drives | |
Features CreeTM Silicon Carbide Power MOSFET CreeTM Silicon Carbide Power Schottky Diode Dual Boost Topology Ultra Low Inductance with Integrated DC-capacitors Extremely Fast Switching with No ""Tail"" Current... | |
Features CreeTM Silicon Carbide Power MOSFET CreeTM Silicon Carbide Power Schottky Diode MNPC Topology with Splitted Output Ultra Low Inductance with Integrated DC-capacitors Extremely Fast Switching with No... | |
Features H-bridge or 2x half-bridge SiC MOS fsw up to 250kHz Thermistor Target Applications Power Supply | |
Features High Efficiency three-level half-bridge High efficiency IGBT Neutral point-Clamped inverter Clip-In PCB mounting Low Inductance Layout Applications Solar UPS | |
Features High efficient and compact symmetric booster High switching frequency and low inductive design Low losses with TRENCHSTOP 5 IGBT Integrated temperature sensor Applications Power Supply Solar Inverters | |
Features High frequency SiC MOSFET Compact and low inductive design Target Applications Solar | |
Features High integration level of Rectifier, PFC and Inverter High-efficiency Input Rectifier Dual PFC with high efficiency, fast IGBT H5 + ultra-fast Si Diode High efficiency H-Bridge inverter with fast... | |
Features High integration level of Rectifier, PFC and Inverter High-efficiency Input Rectifier Wide input voltage range rated PFC Dual PFC with high efficiency, fast IGBT H5 + ultra-fast Si Diode... | |
Features High reactive power capability Low inductance layout Split output Enhanced LVRT capability Application Solar Inverters | |
Features High speed H-Bridge High efficiency MOS Technology Enhanced body diode Integrated capacitors Thermistor Flexible open emitter topology Applications Power Supply Solar UPS | |
Features High speed H-Bridge High efficiency MOS Enhanced body diode Integrated capacitors Thermistor Target Applications Power Supply Solar UPS Welding | |
Features High-efficient rectifier High-efficient IGBT H5 + Stealth 2 Diode Ultra-fast switching speed Integrated capacitors Thermistor Target Applications SMPS Welding | |
Features IGBT in TRENCHSTOP RC technology Open emitter topology New ultra-compact housing Single-screw heat sink mounting Applications Embedded drives Industrial Drives | |
Features IGBT M7 with low VCEsat and improved EMC behavior Standard industrial housing Optimized Rth(j-s) with Phase Change Material Built-in NTC Application Industrial Drives | |
Features IGBT M7 with low VCEsat and improved EMC behavior Standard industrial housing Optimized Rth(j-s) with Phase Change Material Built-in NTC Applications Industrial Drives | |
Features IGBT M7 with low VCEsat and improved EMC behavior Standard industrial housing Optimized Rth(j-s) with Phase Change Material Built-in NTC Target Applications Industrial Drives | |
Features IGBT Mitsubishi gen 7 technology with low VCEsat and improved EMC behavior Standard industrial package Built-in NTC Applications Industrial Drives UPS | |
Features IGBT Mitsubishi gen 7 technology with low VCEsat and improved EMC behavior Standard industrial package Built-in NTC Target Applications Industrial Drives UPS | |
Features IGBT3 (600 V) technology Open emitter topology New ultra-compact housing Single-screw heat sink mounting Applications Dedicated design for motor drive | |
Features IGBT3 (600V) technology Open emitter topology New ultra-compact housing Single-screw heat sink mounting Applications Dedicated design for motor drive | |
Features IGBT4 (1200V) technology Open emitter topology New ultra-compact housing Single-screw heat sink mounting Applications Dedicated design for motor drive | |
Features Mixed voltage component topology Neutral point clamped inverter Reactive power capability Low inductance layout Target Applications Solar Inverter UPS | |
Features Neutral Point Clamped Topology (I-Type) 4 quadrant operation, very high speed Integrated DC capacitor and temperature sensor Kelvin Emitter for improved switching performance Solder pins Applications Power Supply Solar... | |
Features NPC inverter topology Optimized for full rated bi-directional usage (4 quadrant operation) High-speed IGBT in all switch positions NTC Low inductive design with integrated DC capacitor Flow1-12mm package Applications... | |
Features NPC inverter topology Optimized high efficient inverter H5 IGBT in outer and L5 in inner switch NTC Low inductive design with integrated DC capacitor Flow1-12mm package Applications Solar Inverter... | |
Features Rohm™ Silicon Carbide Power MOSFET Rohm™ Silicon Carbide Power Schottky Diode MNPC Topology with Splitted Output Ultra Low Inductance with Integrated DC-capacitors Extremely Fast Switching with No ""Tail"" Current... | |
Features RohmTM SiC-Power MOSFET´s and Schottky Diodes Dual Boost Topology Ultra Low Inductance with Integrated DC-capacitors Extremely Fast Switching with No ""Tail"" Current Solderless Press-fit Mounting Technology Temperature sensor... | |
Features SiC-Power MOSFET´s and Schottky Diodes 3 channel boost topology Ultra Low Inductance with integrated DC-capacitors Switching frequency >100kHz Temperature sensor Target Applications solar inverter Power Supply | |
Features SiC-Power MOSFET´s and Schottky Diodes 3 phase inverter topology with split output Improved switching behavior (reduced turn on energy and X-conduction) Ultra Low Inductance with integrated DC-capacitors Switching frequency... | |
Features Sixpack with three separated legs Solderless Press-fit Mounting Technology Target Applications Battery Charger | |
Features Split Advanced NPC topology Ultra-high switching frequency with SiC MOSFETs Split topology for better thermal performance No x-conduction at high frequencies Target Applications Solar Inverter | |
Features Symmetric Boost for 1500Vdc applications Full SiC for ultra high speed frequencies Target Applications Solar Inverters | |
Features Symmetric Boost for 1500Vdc applications Latest IGBT technology for high speed frequencies Low inductance package Integrated NTC Cost effective alternative to L869L08 Same package and pin-out as L869L08 Target... | |
Features Trench Fieldstop IGBT3 technology Standard industrial housing Optimized Rth(j-s) with Phase Change Material Built-in NTC Applications Industrial Drives | |
Features Trench Fieldstop IGBT3 technology Standard industrial housing Optimized Rth(j-s) with Phase Change Material Built-in NTC Applications Industrial Drives | |
Features Trenchstop™ IGBT3 technology Standard industrial housing Optimized Rth(j-s) with Phase Change Material Built-in NTC Target Applications Industrial Drives | |
Features TrenchstopTM IGBT3 technology Standard industrial housing Optimized Rth(j-s) with Phase Change Material Built-in NTC Target Applications Industrial Drives | |
Features Ultrafast switching with SiC MOSFET and SiC boost diode Compact and low inductive design with integrated capacitors Target Applications Solar UPS | |
Features Wolfspeed(Cree)™ Silicon Carbide Power MOSFET, C2M™ MOSFET Technology Sixpack with three separated legs Solderless Press-fit Mounting Technology Target Applications Battery Charger | |
flowBOOST 0 Dual. Features: High efficiency symmetric boost; Ultra fast switching frequency; Low Inductance Layout; Tandem to FZ06NIA045FH and FZ06NIA045FH01. Applications: Neutral point solar iinverters. | |
Product Details Topology: Booster Kelvin Emitter for improved switching performance Dual Booster Bypass Diode Integrated DC capacitor Temperature sensor Chip technology (main switch): SiC MOSFET Fast reverse recovery High speed... | |
Richardson RFPD is over-stocked on this Vincotech Silicon Carbide module and willing to negotiate on pricing to support your requirement. These are all original manufacturers’ modules. Contact us for samples... | |
Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the... | |
The 0912GN-250V is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 18dB gain, 250 Watts of pulsed RF output power at 128... | |
The 0912GN-300V is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 19dB gain, 300 Watts of pulsed RF output power at 128us... | |
The 0912GN-500LV is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 16dB gain, 500 Watts of pulsed RF output power at 450μs... | |
The 0912GN-650V is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 17dB gain, 650 Watts of pulsed RF output power at 128μs... | |
The 1011GN-1200V is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 18.5 dB gain, 1200 Watts of pulsed RF output power at... | |
The 1011GN-125E is an internally matched, common source, Class AB, GaN on SiC HEMT transmitter driver transistor capable of providing over 18.5 dB power gain and 125 W of pulsed... | |
The 1011GN-125EL is an internally matched, common source, Class AB, GaN on SiC HEMT transmitter driver transistor capable of providing over 18.5 dB power gain and 125 W of pulsed... | |
The 1012GN-800V is an internally matched, COMMON SOURCE, class AB GaN on SiC high power transistor specifically designed for 20us, 6% duty cycle radar systems. It is capable of providing... | |
The 1030/1090MHz, 50V or 52V 1011GN-1600VG is an internally matched, common source, class AB, GaN on SiC HEMT transistor capable of providing greater than 1600 Watts of pulsed output power... | |
The new fastPACK SiC E1 has been developed with the aim to make the EV offboard charger designs faster, smaller and more efficient. The module is based on latest 650V... | |
The new flowBOOST 1 symmetric module packaged in the low inductive flow 1 housing achieves the performance you need to downsize bulky transformers and DC link capacitors. Engineered to deliver... | |
The new flowPACK 1 1200 V sixpack features tandem diode technology and a high-speed IGBT. These semiconductor modules are comprised of several IGBTs to cover currents ranging up to 75... | |
The new flowPACK 1 SiC is faster than 1200 V SiC MOSFETs, safer than 650 V MOSFETs and perfect for charging stations that require soft-switching for LLC topology. This 3xhalf-bridge... | |
Vincotech's new flowPACK 1 module features high-speed IGBTs and soft-switching diodes for improved efficiency and very fast performance. Engineers seeking to streamline their designs for servo applications and line converters... |
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