Microchip Technology, Inc. RF & MW Power Amplifier MMA155PP5

Description
MMA155PP5 is a broadband, Gallium Arsenide (GaAs), pseudomorphic high-electron-mobili ty transistors (PHEMT), Monolithic Microwave Integrated Circuit (MMIC) Distributed Amplifier operating from DC to 16 GHz. It is ideal for test instrumentation, RF telemetry, tactical communication systems, Satcom and space applications. The amplifier provides gain of 14dB, 3.5dB noise figure and 33 dBm of output Power at 3 dB gain compression. Nominal bias is 500mA and 14V Vdd. Output IM3 at 20 dBm is greater than -35 dBc. The MMA155PP5 features RF I/O's that are internally matched to 50-Ohms
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Description
MMA155PP5 is a broadband, Gallium Arsenide (GaAs), pseudomorphic high-electron-mobili ty transistors (PHEMT), Monolithic Microwave Integrated Circuit (MMIC) Distributed Amplifier operating from DC to 16 GHz. It is ideal for test instrumentation, RF telemetry, tactical communication systems, Satcom and space applications. The amplifier provides gain of 14dB, 3.5dB noise figure and 33 dBm of output Power at 3 dB gain compression. Nominal bias is 500mA and 14V Vdd. Output IM3 at 20 dBm is greater than -35 dBc. The MMA155PP5 features RF I/O's that are internally matched to 50-Ohms
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Suppliers

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Description
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RF & MW Power Amplifier - MMA155PP5 - Richardson RFPD
Downers Grove, IL, United States
RF & MW Power Amplifier
MMA155PP5
RF & MW Power Amplifier MMA155PP5
MMA155PP5 is a broadband, Gallium Arsenide (GaAs), pseudomorphic high-electron-mobili ty transistors (PHEMT), Monolithic Microwave Integrated Circuit (MMIC) Distributed Amplifier operating from DC to 16 GHz. It is ideal for test instrumentation, RF telemetry, tactical communication systems, Satcom and space applications. The amplifier provides gain of 14dB, 3.5dB noise figure and 33 dBm of output Power at 3 dB gain compression. Nominal bias is 500mA and 14V Vdd. Output IM3 at 20 dBm is greater than -35 dBc. The MMA155PP5 features RF I/O's that are internally matched to 50-Ohms

MMA155PP5 is a broadband, Gallium Arsenide (GaAs), pseudomorphic high-electron-mobility transistors (PHEMT), Monolithic Microwave Integrated Circuit (MMIC) Distributed Amplifier operating from DC to 16 GHz. It is ideal for test instrumentation, RF telemetry, tactical communication systems, Satcom and space applications. The amplifier provides gain of 14dB, 3.5dB noise figure and 33 dBm of output Power at 3 dB gain compression. Nominal bias is 500mA and 14V Vdd. Output IM3 at 20 dBm is greater than -35 dBc. The MMA155PP5 features RF I/O's that are internally matched to 50-Ohms

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Technical Specifications

  Richardson RFPD
Product Category RF Amplifiers
Product Number MMA155PP5
Product Name RF & MW Power Amplifier
Amplifier Type Power Amplifier
Frequency Range 0.0 to 16000 MHz
Maximum Gain 15 dB
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