Beijing OnMicro Electronics Co., Ltd. RF & MW Power Amplifier OM8443-22

Description
OM8443-22 is a hybrid multimode multiband (MMMB) Power Amplifier Module (PAM) that supports 3G/4G handsets and operates efficiently in CDMA, WCDMA, TD-SCDMA, and LTE modes. The module is fully programmable through a Mobile Industry Processor Interface (MIPI). The PAM consists of a 3G/4G PA blocks for low, high, and mid-bands, and a Multi-Function Control (MFC) block, RF input/output ports internally matched to 50 ohm to reduce the number of external components. A CMOS integrated circuit uses standard MIPI controls to provide the internal MFC interface and operation. Extremely low leakage current maximizes handset standby time. The devices packaged in a small LGA package. (4.0 mm x 6.8 mm x 0.83 mm) Product Features Two T/R (RX) ports and 14 outputs Dual Low Band RF inputs support separate transceiver outputs or interstage filtering Industry-leading PAE for 3G/4G Optimized for APT DCDC operation Fully programmable Mobile Industry Processor Interface (MIPI) control MIPI programmable bias modes optimize best efficiency / linearity trade-off for 3G and 4G; minimizes DG09 for 3G. Small package: 4.0 mm × 6.8 mm × 0.83 mm, LGA 42 pad configuration. Applications Multiband 3G / LTE handsets WCDMA Bands I, II, III, IV, V, VIII, IX TD-SCDMA Bands 34,39 FDD LTE Bands 1, 2, 3, 4, 5, 7, 8, 9, 12, 13, 17, 20, 25, 26, 28, 30, 71 TDD LTE Bands 34, 38, 39, 40, 41 CDMA2000 Bands BC0, BC1, BC4, BC6, BC010, BC015
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Description
OM8443-22 is a hybrid multimode multiband (MMMB) Power Amplifier Module (PAM) that supports 3G/4G handsets and operates efficiently in CDMA, WCDMA, TD-SCDMA, and LTE modes. The module is fully programmable through a Mobile Industry Processor Interface (MIPI). The PAM consists of a 3G/4G PA blocks for low, high, and mid-bands, and a Multi-Function Control (MFC) block, RF input/output ports internally matched to 50 ohm to reduce the number of external components. A CMOS integrated circuit uses standard MIPI controls to provide the internal MFC interface and operation. Extremely low leakage current maximizes handset standby time. The devices packaged in a small LGA package. (4.0 mm x 6.8 mm x 0.83 mm) Product Features Two T/R (RX) ports and 14 outputs Dual Low Band RF inputs support separate transceiver outputs or interstage filtering Industry-leading PAE for 3G/4G Optimized for APT DCDC operation Fully programmable Mobile Industry Processor Interface (MIPI) control MIPI programmable bias modes optimize best efficiency / linearity trade-off for 3G and 4G; minimizes DG09 for 3G. Small package: 4.0 mm × 6.8 mm × 0.83 mm, LGA 42 pad configuration. Applications Multiband 3G / LTE handsets WCDMA Bands I, II, III, IV, V, VIII, IX TD-SCDMA Bands 34,39 FDD LTE Bands 1, 2, 3, 4, 5, 7, 8, 9, 12, 13, 17, 20, 25, 26, 28, 30, 71 TDD LTE Bands 34, 38, 39, 40, 41 CDMA2000 Bands BC0, BC1, BC4, BC6, BC010, BC015
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Suppliers

Company
Product
Description
Supplier Links
Downers Grove, IL, United States
RF & MW Power Amplifier
OM8443-22
RF & MW Power Amplifier OM8443-22
OM8443-22 is a hybrid multimode multiband (MMMB) Power Amplifier Module (PAM) that supports 3G/4G handsets and operates efficiently in CDMA, WCDMA, TD-SCDMA, and LTE modes. The module is fully programmable through a Mobile Industry Processor Interface (MIPI). The PAM consists of a 3G/4G PA blocks for low, high, and mid-bands, and a Multi-Function Control (MFC) block, RF input/output ports internally matched to 50 ohm to reduce the number of external components. A CMOS integrated circuit uses standard MIPI controls to provide the internal MFC interface and operation. Extremely low leakage current maximizes handset standby time. The devices packaged in a small LGA package. (4.0 mm x 6.8 mm x 0.83 mm) Product Features Two T/R (RX) ports and 14 outputs Dual Low Band RF inputs support separate transceiver outputs or interstage filtering Industry-leading PAE for 3G/4G Optimized for APT DCDC operation Fully programmable Mobile Industry Processor Interface (MIPI) control MIPI programmable bias modes optimize best efficiency / linearity trade-off for 3G and 4G; minimizes DG09 for 3G. Small package: 4.0 mm × 6.8 mm × 0.83 mm, LGA 42 pad configuration. Applications Multiband 3G / LTE handsets WCDMA Bands I, II, III, IV, V, VIII, IX TD-SCDMA Bands 34,39 FDD LTE Bands 1, 2, 3, 4, 5, 7, 8, 9, 12, 13, 17, 20, 25, 26, 28, 30, 71 TDD LTE Bands 34, 38, 39, 40, 41 CDMA2000 Bands BC0, BC1, BC4, BC6, BC010, BC015

OM8443-22 is a hybrid multimode multiband (MMMB) Power Amplifier Module (PAM) that supports 3G/4G handsets and operates efficiently in CDMA, WCDMA, TD-SCDMA, and LTE modes. The module is fully programmable through a Mobile Industry Processor Interface (MIPI).

The PAM consists of a 3G/4G PA blocks for low, high, and mid-bands, and a Multi-Function Control (MFC) block, RF input/output ports internally matched to 50 ohm to reduce the number of external components. A CMOS integrated circuit uses standard MIPI controls to provide the internal MFC interface and operation. Extremely low leakage current maximizes handset standby time. The devices packaged in a small LGA package. (4.0 mm x 6.8 mm x 0.83 mm)

Product Features

  • Two T/R (RX) ports and 14 outputs
  • Dual Low Band RF inputs support separate transceiver outputs or interstage filtering
  • Industry-leading PAE for 3G/4G
  • Optimized for APT DCDC operation
  • Fully programmable Mobile Industry Processor Interface (MIPI) control
  • MIPI programmable bias modes optimize best efficiency / linearity trade-off for 3G and 4G; minimizes DG09 for 3G.
  • Small package: 4.0 mm × 6.8 mm × 0.83 mm, LGA 42 pad configuration.

Applications

  • Multiband 3G / LTE handsets
  • WCDMA Bands I, II, III, IV, V, VIII, IX
  • TD-SCDMA Bands 34,39
  • FDD LTE Bands 1, 2, 3, 4, 5, 7, 8, 9, 12, 13, 17, 20, 25, 26, 28, 30, 71
  • TDD LTE Bands 34, 38, 39, 40, 41
  • CDMA2000 Bands BC0, BC1, BC4, BC6, BC010, BC015
Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category RF Amplifiers
Product Number OM8443-22
Product Name RF & MW Power Amplifier
Amplifier Type Power Amplifier
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