Richardson RFPD Datasheets for RF Terminations
RF terminations are used to absorb energy and prevent RF signals from reflecting back from open-ended or unused ports.
RF Terminations: Learn more
| Product Name | Notes |
|---|---|
| Flange Mount Termination. The G100N50W4 is high performance Aluminum Nitride (AIN) flange mount termination intended as a cost competitive alternative to Beryllium Oxide (BeO). The termination is well suited to... | |
| Flange Mount Termination. The G450N50W4 is high performance Aluminum Nitride (AIN) flange mount termination intended as a cost competitive alternative to Beryllium Oxide (BeO). The termination is also RoHS compliant! | |
| Flangeless Termination 125 Watts Features 125 Watts AlN Ceramic Substrate Non-Nichrome Resistive Element Low VSWR High power 100% Tested | |
| Half Flange Termination 100 Watts, 50 Ohm. The I100N50X4B is high performance Aluminum Nitride (AlN) half flange termination intended as a cost competitive alternative to Beryllium Oxide (BeO). The termination... | |
| Half Flange Termination 100 Watts, 50 Ohms. The J100N50X4B is high performance Aluminum Nitride (AlN) half flange termination intended as a cost competitive alternative to Beryllium Oxide (BeO). The termination... | |
| Half Flange Termination 100 Watts, 50 Ohms. The K100N50X4B is high performance Aluminum Nitride (AlN) half flange termination intended as a cost competitive alternative to Beryllium Oxide (BeO). The termination... | |
| High Power Flange Mount Termination | |
| High Power Resistive Products. | |
| High Power, Flange Mount Termination | |
| IPP-TN203-50 is a 60W half flange RF termination operating in the frequency range DC - 6000 MHz. | |
| IPP-TN220-50 is a 100W half flange RF termination operating in the frequency range DC - 6000 MHz. | |
| Leaded Chip Termination | |
| Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the... | |
| Surface Mount Termination 10 Watts, 50?. The C20A50Z4 is high performance Alumina (Al2O3) surface mount termination intended as a cost competitive alternative to Aluminum Nitride (AlN). The termination is well... | |
| Surface Mount Termination, 20 Watts, 50 Ohm. The C20N50Z4 is high performance Aluminum Nitride (AIN) surface mount termination intended as a cost competitive alternative to Beryllium Oxide (BeO). The termination... | |
| Surface Mount Termination, 200 Watts, 50 Ohm. The C200N50Z4 is high performance Aluminum Nitride (AIN) surface mount termination intended as a cost competitive alternative to Beryllium Oxide (BeO). The termination... | |
| The 100200-4Z50-2 is high performance Alumina surface mount termination intended as a lower cost alternative to Aluminum Nitride (AlN) and Beryllium Oxide (BeO). The termination is well suited to all... | |
| The A100N50X4A is high performance Aluminum Nitride (AlN) chip termination intended as an alternative to Beryllium Oxide (BeO). The termination is well suited to all cellular frequency bands such as; | |
| The A16A50X4 is high performance Alumina (Al2O3) chip termination intended as a low cost alternative to Beryllium Oxide (BeO) and Aluminum Nitride (AlN). The termination is well suited to all... | |
| The A500N50X4 is high performance Aluminum Nitride (AlN) chip termination intended as a cost competitive alternative to Beryllium Oxide (BeO). The high power handling makes the part ideal for terminating... | |
| The C10A50Z4 is high performance RoHS compliant Alumina (Al2O3) surface mount termination intended as a lower cost alternative to Aluminum Nitride (AlN) and Beryllium Oxide (BeO). The termination is well... | |
| The E150N50X4 is high performance Aluminum Nitride (AlN) termination intended as a cost competitive alternative to Beryllium Oxide (BeO). The termination is well suited to all cellular frequency bands such... | |
| The G150N50W4B is high performance Aluminum Nitride (AlN) flange mount termination intended as a cost competitive alternative to Beryllium Oxide (BeO). The termination is well suited to all cellular frequency... | |
| The G250N50W4 is high performance Aluminum Nitride (AIN) flange mount termination intended as a cost competitive alternative to Beryllium Oxide (BeO). The termination is well suited to all cellular frequency... | |
| The G300N50W4 is high performance Aluminum Nitride (AlN) flange mount termination. The performance is specifically tuned for ISM band 2.4-2.5GHz and is intended for use in RF heating applications. The... | |
| The J100N50X4 is high performance Aluminum Nitride (AlN) half flange termination intended as a cost competitive alternative to Beryllium Oxide (BeO). The termination is well suited to all cellular frequency... | |
| The XMWT80L1G is a Flip-Chip, surface mountable 50 Ohm termination with a power rating of 0.5 Watts (AVG) and a peak to average ratio of 12dB. This thick film ALN... |