Richardson RFPD Datasheets for RF Terminations

RF terminations are used to absorb energy and prevent RF signals from reflecting back from open-ended or unused ports.
RF Terminations: Learn more

Product Name Notes
Features Aluminum Nitride (AIN) ceramic Welded Silver Leads Non-Nicrome Resistive Element Low VSWR
Flange Mount Termination 150 Watts, 50 Ohms. The G150N50W4E is high performance Aluminum Nitride (AlN) flange mount termination intended as a cost competitive alternative to Beryllium Oxide (BeO). The termination...
Flange Mount Termination, 200 Watts, 50 Ohms. The G200N50W4 is high performance Aluminum Nitride (AIN) flange mount termination intended as a cost competitive alternative to Beryllium Oxide (BeO). The termination...
Flange Mount Termination. The G100N50W4 is high performance Aluminum Nitride (AIN) flange mount termination intended as a cost competitive alternative to Beryllium Oxide (BeO). The termination is well suited to...
Flange Mount Termination. The G450N50W4 is high performance Aluminum Nitride (AIN) flange mount termination intended as a cost competitive alternative to Beryllium Oxide (BeO). The termination is also RoHS compliant!
Flangeless Termination 125 Watts Features 125 Watts AlN Ceramic Substrate Non-Nichrome Resistive Element Low VSWR High power 100% Tested
Half Flange Termination 100 Watts, 50 Ohm. The I100N50X4B is high performance Aluminum Nitride (AlN) half flange termination intended as a cost competitive alternative to Beryllium Oxide (BeO). The termination...
Half Flange Termination 100 Watts, 50 Ohms. The J100N50X4B is high performance Aluminum Nitride (AlN) half flange termination intended as a cost competitive alternative to Beryllium Oxide (BeO). The termination...
Half Flange Termination 100 Watts, 50 Ohms. The K100N50X4B is high performance Aluminum Nitride (AlN) half flange termination intended as a cost competitive alternative to Beryllium Oxide (BeO). The termination...
High Power Flange Mount Termination
High Power Resistive Products.
High Power, Flange Mount Termination
IPP-TN201-50 is a 30W half flange RF termination operating in the frequency range DC - 6000 MHz.
IPP-TN203-50 is a 60W half flange RF termination operating in the frequency range DC - 6000 MHz.
IPP-TN220-50 is a 100W half flange RF termination operating in the frequency range DC - 6000 MHz.
Leaded Chip Termination
Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the...
Surface Mount Chip Terminations
Surface Mount Termination 10 Watts, 50?. The C20A50Z4 is high performance Alumina (Al2O3) surface mount termination intended as a cost competitive alternative to Aluminum Nitride (AlN). The termination is well...
Surface Mount Termination 150 Watts, 50Ω. The C150N50Z4 is high performance Aluminum Nitride (AlN) surface mount termination intended as a cost competitive alternative to Beryllium Oxide (BeO). The termination is...
Surface Mount Termination, 20 Watts, 50 Ohm. The C20N50Z4 is high performance Aluminum Nitride (AIN) surface mount termination intended as a cost competitive alternative to Beryllium Oxide (BeO). The termination...
Surface Mount Termination, 200 Watts, 50 Ohm. The C200N50Z4 is high performance Aluminum Nitride (AIN) surface mount termination intended as a cost competitive alternative to Beryllium Oxide (BeO). The termination...
Surface Mount Termination. The C16A50Z4 is high performance Alumina surface mount termination intended as a low cost alternative to Aluminum Oxide (AlN). The termination is well suited to all cellular...
The 100200-4Z50-2 is high performance Alumina surface mount termination intended as a lower cost alternative to Aluminum Nitride (AlN) and Beryllium Oxide (BeO). The termination is well suited to all...
The A100N50X4A is high performance Aluminum Nitride (AlN) chip termination intended as an alternative to Beryllium Oxide (BeO). The termination is well suited to all cellular frequency bands such as;
The A125N50X4 is high performance Aluminum Nirtride (AlN) chip termination intended as an alternative to Beryllium Oxide (BeO). The termination is well suited to all cellular frequency bands such as;
The A125N50X4 is high performance Aluminum Nitride (AlN) chip termination intended as an alternative to Beryllium Oxide (BeO). The termination is well suited to all cellular frequency bands such as;
The A150N50X4B is high performance Aluminum Nitride (AlN) chip termination intended as a cost competitive alternative to Beryllium Oxide (BeO). The termination is well suited to all cellular frequency bands...
The A150N50X4C is high performance Aluminum Nitride (AlN) chip termination intended as a cost competitive alternative to Beryllium Oxide (BeO). The termination dissipates 150W and has a return loss of...
The A16A50X4 is high performance Alumina (Al2O3) chip termination intended as a low cost alternative to Beryllium Oxide (BeO) and Aluminum Nitride (AlN). The termination is well suited to all...
The A500N50X4 is high performance Aluminum Nitride (AlN) chip termination intended as a cost competitive alternative to Beryllium Oxide (BeO). The high power handling makes the part ideal for terminating...
The C100N50Z4A is high performance Aluminum Nitride (AlN) surface mount termination intended as a cost competitive alternative to Beryllium Oxide (BeO). The termination is well suited to all cellular frequency...
The C10A50Z4 is high performance RoHS compliant Alumina (Al2O3) surface mount termination intended as a lower cost alternative to Aluminum Nitride (AlN) and Beryllium Oxide (BeO). The termination is well...
The C45N50Z4 is a high performance AlN surface mount termination. The termination is well suited to all cellular frequency bands such as; AMPS, GSM, DCS, PCS, PHS and UMTS. The...
The C50A50Z4 is high performance Alumina (Al203) surface mount termination intended as a low cost alternative to Aluminum Oxide (AlN). The termination is well suited to all cellular frequency bands...
The C8A50Z4B is high performance Alumina (Al203) Surface Mount termination intended as a low cost alternative to Aluminum Nitride (AlN). The termination is well suited to all cellular frequency bands...
The E150N50X4 is high performance Aluminum Nitride (AlN) termination intended as a cost competitive alternative to Beryllium Oxide (BeO). The termination is well suited to all cellular frequency bands such...
The G150N50W4B is high performance Aluminum Nitride (AlN) flange mount termination intended as a cost competitive alternative to Beryllium Oxide (BeO). The termination is well suited to all cellular frequency...
The G250N50W4 is high performance Aluminum Nitride (AIN) flange mount termination intended as a cost competitive alternative to Beryllium Oxide (BeO). The termination is well suited to all cellular frequency...
The G300N50W4 is high performance Aluminum Nitride (AlN) flange mount termination. The performance is specifically tuned for ISM band 2.4-2.5GHz and is intended for use in RF heating applications. The...
The I100N50X4 is high performance Aluminum Nitride (AlN) flange mount termination intended as a cost competitive alternative to Beryllium Oxide (BeO). The termination is well suited to all cellular frequency...
The J100N50X4 is high performance Aluminum Nitride (AlN) half flange termination intended as a cost competitive alternative to Beryllium Oxide (BeO). The termination is well suited to all cellular frequency...