Richardson RFPD Datasheets for Metal-Oxide Semiconductor FET (MOSFET)
Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts.
Metal-Oxide Semiconductor FET (MOSFET): Learn more
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1.2-kV, 50-A Silicon Carbide Six-Pack (Three-Phase) Module Features: Zero turn-off tail current Zero reverse recovery current High-frequency operation Easy-to-drive MOS gate Pin-compatible to industry-standard, IGBT, six-pack modules Silicon Carbide replacement... | |
1.2kV, 13 mΩ All-Silicon Carbide Half-Bridge Module Features Ultra Low Loss High-Frequency Operation Zero Reverse Recovery Current from Diode Zero Turn-off Tail Current from MOSFET Normally-off, Fail-safe Device Operation Ease... | |
1.2kV, 5.0 mΩ All-Silicon Carbide Half-Bridge Module Module Features Ultra Low Loss High-Frequency Operation Zero Reverse Recovery Current from Diode Zero Turn-off Tail Current from MOSFET Normally-off, fail-safe device operation... | |
1.2kV, 80 mΩ Silicon Carbide Six-Pack (Three Phase) Module Features Ultra Low Loss High-Frequency Operation Zero Reverse Recovery Current from Diode Zero Turn-off Tail Current from MOSFET Normally-off, Fail-safe Device... | |
1.7kV, 8.0 mΩ All-Silicon Carbide Half-Bridge Module Features Ultra Low Loss High-Frequency Operation Zero Reverse Recovery Current from Diode Zero Turn-off Tail Current from MOSFET Normally-off, Fail-safe Device Operation Ease... | |
1200 V, 175 A, Silicon Carbide, Half-Bridge Module Technical Features Industry Standard 62mm Footprint Ultra Low Loss, High-Frequency Operation Zero Reverse Recovery from Diodes Zero Turn-off Tail Current from MOSFET... | |
1200 V, 350 A, Silicon Carbide, Half-Bridge Module Technical Features Industry Standard 62mm Footprint Ultra Low Loss, High-Frequency Operation Zero Reverse Recovery from Diodes Zero Turn-off Tail Current from MOSFET... | |
1200 V, 480 A All-Silicon Carbide High Performance, Switching Optimized, Half-Bridge Module Technical Features Low Inductance, Low Profile 62mm Footprint High Junction Temperature (175 C) Operation Implements Switching Optimized Third... | |
1200 V, 530 A, Silicon Carbide, Half-Bridge Module Technical Features Industry standard 62mm Footprint Ultra Low Loss, High-Frequency Operation Zero Reverse Recovery from Diodes Zero Turn-off Tail Current from MOSFET... | |
1200 V, 760 A All-Silicon Carbide High Performance, Switching Optimized, Half-Bridge Module Technical Features Low Inductance, Low Profile 62mm Footprint High Junction Temperature (175 C) Operation Implements Switching Optimized Third... | |
150V, 200A, Insulated type 6-element pack, NTC Thermistor inside | |
2nd-Generation Z-FET® 25-mΩ, 1200-V, SiC MOSFET Features High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive Resistant to Latch-Up Avalanche... | |
3300V Silicon Carbide (SiC) MOSFET MOSFET-SiC-3300V is part of our newest family of SiC MOSFET devices. Microchip's SiC solutions focus on high performance helping to maximize system efficiency and minimize... | |
1200 V, 760 A, Silicon Carbide High-Performance, Half-Bridge Module Same electrical performance as the CAB760M12HM3. The R in CAB760M12HM3R designates that the pins are on the right-hand side of the... | |
Features 3rd generation SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High blocking voltage with low On-resistance High speed switching... | |
Features C3M SiC MOSFET technlogy High blocking voltage with low RDS(on) Easy to parallel and simple to drive Resistant to Latch-up High Gate Resistance for Drives Benefits Higher System Efficiency... | |
Features High blocking voltage with industry leading low RDS(on) over temperature stability Fast intrinsic diode with low reverse recovery charge (Qrr) High-speed switching with low output capacitance Low conduction losses... | |
Features High blocking voltage with low on-resistance Resistant to Latch-up Fast intrinsic diode with low reverse recovery (Qrr) Easy to parallel and simple to drive Benefits Higher System Efficiency Low... | |
Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = +175C Fast and reliable... | |
Silicon Carbide Power MOSFET C2M MOSFET Technology Features C2M SiC MOSFET technlogy High Blocking Voltage with Low on resistance High Speed Switching with Low Capacitances Easy to Parallel and Simple... | |
Silicon Carbide Power MOSFET C3M MOSFET Technology Features High Blocking Voltage with Low on resistance Resistant to Latch-up Fast intrinsic diode with low reverse recovery (Qrr) Easy to Parallel and... | |
Silicon Carbide Power MOSFET C3MTMMOSFET Technology Features 3rd generation SiC MOSFET technology Optimized package with separate driver source pin High blocking voltage with low on-resistance High speed switching... | |
Application Solar converter Uninterruptible Power Supplies Features Q1, Q2 SiC Power MOSFET Low RDS(on) High temperature performance Q3, Q4 Trench + field Stop IGBT3 Low voltage drop Low tail... | |
Application Uninterruptible Power Supplies Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient... | |
Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features SiC Power MOSFET High speed switching Low RDS(on) Ultra low loss SiC Schottky Diode Zero reverse... | |
Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode Zero reverse recovery Zero forward... | |
Automotive Qualified 1200 V, 450 A All-Silicon Carbide Conduction-Optimized , Half-Bridge Module Technical Features High Power Density Footprint High Junction Temperature (175 C) Operation Low Inductance (6.7 nH) Design Implements... | |
C2M1000170D is ideal for power supplies to 200W operating from DC inputs from 200V to 1000V. This product beats silicon MOSFETs on switching efficiency, operating frequency, blocking voltage characteristics and... | |
Cree’s C2M0040120D 2nd-Generation Z-FET® is a 1200V, 40mOhm RDS(on) SiC MOSFET in a TO-247-3 package Features High Speed Switching with Low Capacitances High Blocking Voltage with Low R... | |
Faster, cooler and even more efficient, this new power module is the first-choice H-bridge for switching frequencies up to 400 kHz. Featuring a 900 V SiC MOSFET, it tops 1200... | |
Features 3rd generation SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant... | |
Features 3rd generation SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High blocking voltage with low On-resistance High speed switching... | |
Features 3rd generation SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High blocking voltage with low on-resistance High-speed switching with... | |
Features 3x Booster with SiC MOSFET and SiC Diode Ultrafast switching Low inductive design Target Applications Solar UPS | |
Features 900 V, SiC MOS Switching frequency up to 400 kHz Suitable for hard switching/soft switching Increased power density NTC Target Applications Power Supply Special Application Welding & Cutting | |
Features 900 V, SiC MOS Switching frequency up to 400 kHz Suitable for hard switching/soft switching Increased power density NTC Target Applications Power Supply Special Application Welding | |
Features C3M SiC MOSFET technology Standard industrial housing Low inductive design Optimized Rth(j-s) with Phase Change Material Built-in NTC Applications Charging Stations Energy Storage Systems Power Supply Solar Inverters Welding... | |
Features Compact and low inductive design High frequency SiC MOSFET Integrated NTC Kelvin Emitter for improved switching performance Open Emitter configuration Temperature sensor High Blocking Voltage with low drain source... | |
Features CreeTM Silicon Carbide Power MOSFET CreeTM Silicon Carbide Power Schottky Diode Dual Boost Topology Ultra Low Inductance with Integrated DC-capacitors Extremely Fast Switching with No ""Tail"" Current... | |
Features CreeTM Silicon Carbide Power MOSFET CreeTM Silicon Carbide Power Schottky Diode MNPC Topology with Splitted Output Ultra Low Inductance with Integrated DC-capacitors Extremely Fast Switching with No... | |
Features H-bridge or 2x half-bridge SiC MOS fsw up to 250kHz Thermistor Target Applications Power Supply | |
Features High Blocking Voltage with Low On-Resistance High Speed Switching with Low Capacitances Easy to Parallel and Simple to Drive Resistant to Latch-up Halogen Free, RoHS Compliant Benefits Higher System... | |
Features High blocking voltage with low on-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Easy to parallel and simple to drive Gold back... | |
Features High blocking voltage with low RDS(on) Easy to parallel and simple to drive Low parasitic inductance Separate driver source pin Ultra-low drain-gate capacitance Halogen Free, RoHS compliant Benefits... | |
Features High Efficient Advanced Paralleled NPC Topology Asymmetrical Inductance with Interface for Optional Regeneration of Switching Losses High Power Screw Interface Integrated DC-Snubber Capacitors Temperature Sensor Applications Solar Inverter UPS... | |
Features High frequency SiC MOSFET Compact and low inductive design Target Applications Solar | |
Features Industry-Leading, Reliable 3rd Generation Silicon Carbide MOSFET Technology in Robust, Well-Established 62mm Form Factor Strong Thermal Performance + Robust CTE Matching with Aluminum Nitride Substrate + Copper Baseplate Low-Inductance... | |
Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = +175C Fast and reliable... | |
Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = 175 C Fast and reliable... | |
Features Minimum of 900V Vbr across entire operating temperature range High blocking voltage with low RDS(on) Fast intrinsic diode with low reverse recovery charge (Qrr) High-speed switching with low output... | |
Features No reverse recovery Low forward voltage Low leakage current Avalanche energy rated RoHS compliant Isolated voltage to 2500 V Benefits Outstanding performance at high-frequency operation Direct mounting to heatsink... | |
Features Rohm™ Silicon Carbide Power MOSFET Rohm™ Silicon Carbide Power Schottky Diode MNPC Topology with Splitted Output Ultra Low Inductance with Integrated DC-capacitors Extremely Fast Switching with No ""Tail"" Current... | |
Features RohmTM SiC-Power MOSFET´s and Schottky Diodes Dual Boost Topology Ultra Low Inductance with Integrated DC-capacitors Extremely Fast Switching with No ""Tail"" Current Solderless Press-fit Mounting Technology Temperature sensor... | |
Features SiC Power MOSFET: Low RDS(on), High speed switching, Ultra low loss SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF... | |
Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive High level of integration M6 power connectors Aluminum Nitride (AlN) substrate for improved thermal performance Benefits... | |
Features SiC Power MOSFET: Low RDS(on), High temperature performance M2.5 signals connectors Very Low stray inductance M4 and M5 power connectors Internal thermistor for temperature monitoring Aluminum Nitride (AlN) substrate... | |
Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF Low stray inductance... | |
Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient on VF Very low... | |
Features SiC Power MOSFET Low RDS(on) High temperature performance Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF Benefits... | |
Features SiC Power MOSFET Low RDS(on) High temperature performance Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF Kelvin... | |
Features SiC Power MOSFET Low RDS(on) High temperature performance Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF Very... | |
Features SiC-Power MOSFET´s and Schottky Diodes 3 channel boost topology Ultra Low Inductance with integrated DC-capacitors Switching frequency >100kHz Temperature sensor Target Applications solar inverter Power Supply | |
Features SiC-Power MOSFET´s and Schottky Diodes 3 phase inverter topology with split output Improved switching behavior (reduced turn on energy and X-conduction) Ultra Low Inductance with integrated DC-capacitors Switching frequency... | |
Features Sixpack with three separated legs Solderless Press-fit Mounting Technology Target Applications Battery Charger | |
Features Split Advanced NPC topology Ultra-high switching frequency with SiC MOSFETs Split topology for better thermal performance No x-conduction at high frequencies Target Applications Solar Inverter | |
Features Symmetric Boost for 1500Vdc applications Full SiC for ultra high speed frequencies Target Applications Solar Inverters | |
Features Three-leg Booster module Full SiC for ultra fast switching frequency Low inductive package Ultra high efficient Target Applications Solar | |
Features Ultra-Low Loss High Frequency Operation Zero Turn-Off Tail Current from MOSFET Normally-Off, Fail-Safe Device Operation Applications EV Chargers Solar High-Efficiency Converters / Inverters Motor and Traction Drives Smart-Grid /... | |
Features Ultrafast switching with SiC MOSFET and SiC boost diode Compact and low inductive design with integrated capacitors Target Applications Solar UPS | |
Features Very low stray inductance Internal thermistor for temperature monitoring M4 and M5 power connectors M2.5 signals connectors AlN substrate for improved thermal performance SiC Power MOSFET Low RDS(on)... | |
Features Wolfspeed(Cree)™ Silicon Carbide Power MOSFET, C2M™ MOSFET Technology Sixpack with three separated legs Solderless Press-fit Mounting Technology Target Applications Battery Charger | |
Full - Bridge MOSFET Power Module | |
FULL - BRIDGE SUPER JUNCTION MOSFET POWER MODULE. Application: Welding Converters, Switched Mode Power Supplies, Uninterruptible Power Supplies, Motor Control. Features: COOLMOS, Very Low Stray Inductance, Internal Thermistor for Temperature... | |
FULL - BRIDGE SUPER JUNCTION MOSFET POWER MODULE. Application: Welding Converters, Switched Mode Power Supplies, Uninterruptible Power Supplies. Features: COOLMOS, Kelvin Source for Easy Drive, Very Low Stray Inductance, Internal... | |
FULL - BRIDGE SUPER JUNCTION MOSFET POWER MODULE. Application: Welding Converters, Switched Mode Power Supplies, Uninterruptible Power Supplies. Features: COOLMOS, Very Low Stray Inductance, Internal Thermistor for Temperature Monitoring, High... | |
ISOTOP BOOST CHOPPER MOSFET POWER MODULE. Application: AC and DC Motor Control, Switched Mode Power Supplies, Power Factor Correction, Brake Switch. Features: Power MOS V MOSFETs, ISOTOP Package (SOT-227), Very... | |
ISOTOP BOOST CHOPPER MOSFET POWER MODULE | |
ISOTOP BOOST CHOPPER SUPER JUNCTION MOSFET POWER MODULE. Application: AC and DC Motor Control, Switched Mode Power Supplies, Power Factor Correction, Brake Switch. Features: COOLMOS, ISOTOP Package (SOT-227), Very Low... | |
ISOTOP BUCK CHOPPER MOSFET POWER MODULE. Application: AC and DC Motor Control, Switched Mode Power Supplies. Features: Power MOS 7 MOSFETs, ISOTOP Package (SOT-227), Very Low Stray Inductance, High Level... | |
ISOTOP BUCK CHOPPER MOSFET POWER MODULE. Application: AC and DC Motor Control, Switched Mode Power Supplies. Features: Power MOS V MOSFETs, ISOTOP Package (SOT-227), Very Low Stray Inductance, High Level... | |
ISOTOP® Boost chopper SiC MOSFET + SiC chopper diode Power module | |
ISOTOP® Boost chopper SiC MOSFET + SiC chopper diode Power module Benefits Outstanding performance at high frequency operation Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low... | |
Linear MOSFET Power Module (Single Switch). Application: Electronic load dedicated to power supplies and battery discharge testing. Features: Linear MOSFET, Very low stray inductance, Internal thermistor for temperature monitoring, High... | |
Linear MOSFETs are optimized for applications operating in the Linear region where concurrent high voltage and high current can occur at near DC conditions (>100 msec). | |
Microsemi manufacturer’s part number: APTMC120AM20CT1AG Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode... | |
Phase leg MOSFET Power Module | |
Phase leg SiC MOSFET Power Module | |
PHASE LEG SUPER JUNCTION MOSFET POWER MODULE. Application: Welding Converters, Switched Mode Power Supplies, Uninterruptible Power Supplies, Motor Control. Features: COOLMOS, Very Low Stray Inductance, Internal Thermistor for Temperature Monitoring,... | |
Phase leg Super Junction MOSFET Power Module | |
Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode Power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly... | |
POWER MOS 7® MOSFET: Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power... | |
Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode Power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® | |
Power MOS 8™ is a high speed, high voltage N-channel switch-mode Power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low... | |
POWER MOS IV® MOSFET | |
POWER MOS IV®. N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS. | |
Power MOS V® is a new generation of high voltage N-Channel enhancement mode Power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power... | |
POWER MOS V®. Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces... | |
POWER MOS V®: Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces... | |
Powerex MOSFET Modules are designed for use in low voltage switching applications. Each module consists of 6 MOSFET switches with low Rds(on) and a fast recovery body diode to yield... | |
Product Details Topology: Booster Kelvin Emitter for improved switching performance Dual Booster Bypass Diode Integrated DC capacitor Temperature sensor Chip technology (main switch): SiC MOSFET Fast reverse recovery High speed... | |
Richardson RFPD is over-stocked on this Vincotech Silicon Carbide module and willing to negotiate on pricing to support your requirement. These are all original manufacturers’ modules. Contact us for samples... | |
Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the... | |
Silicon carbide (SiC) power MOSFET product line from Microsemi increase your performance over silicon MOSFET and silicon IGBT solutions while lowering your total cost of ownership for high-voltage applications. Features... | |
Silicon Carbide Power MOSFET C2MTM Technology Features Optimized package with separate driver source pin 8mm of creepage distance between drain and source High Blocking Voltage with Low On-Resistance High... | |
Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode Features 3rd generation SiC MOSFET technology High blocking voltage with low on-resistance High-speed switching with low capacitances Fast intrinsic diode with... | |
Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode Features 3rd generation SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source... | |
Silicon Carbide Power MOSFET Z-FETTM MOSFET Features High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive Resistant to... | |
Silicon Carbide Power MOSFET Z-FETTM MOSFET N-Channel Enhancement Mode. Features • High Speed Switching with Low Capacitances • High Blocking Voltage with Low RDS(on) • Easy to Parallel and Simple... | |
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features 3rd Generation SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode... | |
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features 3rd Generation SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with... | |
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features 3rd Generation SiC MOSFET technology Low inductance package with separate driver source pin 7mm of creepage distance between drain and source... | |
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features 3rd generation SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High... | |
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features 3rd generation SiC MOSFET technology Optimized package with separate driver source pin High blocking voltage with low on-resistance High speed switching... | |
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features C3MTM SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High blocking... | |
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features C3M SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with low... | |
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features C3MTM SiC MOSFET technology Low impedance package with driver source pin 7mm of creepage distance between drain and source High... | |
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features C3MTM SiC MOSFET technology Low parasitic inductance with separate driver source pin 7mm of creepage distance between drain and source... | |
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features C3MTM SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High... | |
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features New C3M SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with... | |
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features New C3M SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances New low impedance package... | |
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features New C3M SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High... | |
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Wolfspeed continues its leadership in SiC technology by offering MOSFETs in a wide variety of on-resistances and package options, enabling designers to... | |
Silicon Carbide Power MOSFET E-Series Automotive Features 3rd generation SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse... | |
SINGLE DIE ISOTOP PACKAGE. N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS. | |
Single switch with Series diode Trench + Field Stop IGBT4 | |
Super Junction MOSFET. Ulra low RDS(ON); Low Miller Capacitance; Ultra Low Gate Charge, Qg; Avalanche Energy Rated; TO-247 Package. | |
Super Junction MOSFET. Ultra low RDS(ON); Low Miller Capacitance; Ultra Low Gate Charge, Qg; Avalanche Energry Rated; Extreme dv/dt Rated, Popular TO-247 or Surface Mount D3 Package. | |
Super Junction MOSFET. Ultra low RDS(ON); Low Miller Capacitance; Ultra Low Gate Charge, Qg; Avalanche Energry Rated; Popular T-MAX or TO-264 Package. | |
Super Junction MOSFET. Ultra low RDS(ON); Low Miller Capacitance; Ultra Low Gate Charge, Qg; Avalanche Energry Rated; TO-247 or Surface Mount D3PAK Package. | |
Super Junction MOSFET. Ultra low RDS(ON); Low Miller Capacitance; Ultra Low Gate Charge, Qg; Avalanche Energry Rated; TO-264 Max Package. | |
Super Junction MOSFET | |
Technical Features Ultra-Low Loss, High Frequency Operation Low Forward Voltage (VF) Drop with Positive Temperature Coefficient Zero Reverse Recovery Current Zero Forward Recovery Voltage Temperature-Independ ent Switching Behavior... | |
Technical Features Ultra-Low Loss, High Frequency Operation Low Forward Voltage (VF) Drop with Positive Temperature Coefficient Zero Reverse Recovery Current Zero Forward Recovery Voltage Temperature-Independ ent Switching Behavior Applications Railway,... | |
Technical Features Ultra-Low Loss, High Frequency Operation Zero Turn-Off Tail Current from MOSFET Normally-Off, Fail-Safe Device Operation Anti-Parallel Schottky Diode Temperature-Independ ent Switching Behavior Applications Railway, Traction, and Motor Drives... | |
Technical Features Ultra-Low Loss High Frequency Operation Zero Turn-Off Tail Current from MOSFET Normally-Off, Fail-Safe Device Operation Applications Railway, Traction, and Motor Drives EV Chargers High-Efficiency Converters / Inverters Renewable... | |
The AAT4280 SmartSwitch is a P-channel MOSFET power switch designed for high-side load switching applications. The P-channel MOSFET device has a typical RDS(ON) of 80mW, allowing increased load switch power... | |
The AAT4616 SmartSwitch is a current limited P-channel MOSFET power switch designed for high side load switching applications. This switch operates with inputs ranging from 2.4V to 5.5V, making it... | |
The AAT4618 SmartSwitch is a member of Skyworks' Application Specific Power MOSFET™ (ASPM™) product family. It is a current limited P-channel MOSFET power switch designed for high-side load switching applications... | |
The AAT4712 is a programmed, current limited P-channel MOSFET power switch designed for high-side load-switching applications for SSD memory buffer saving solutions. With the programmed current limit, the AAT4712 ensures... | |
The new fastPACK SiC E1 has been developed with the aim to make the EV offboard charger designs faster, smaller and more efficient. The module is based on latest 650V... | |
The new flowPACK 1 SiC is faster than 1200 V SiC MOSFETs, safer than 650 V MOSFETs and perfect for charging stations that require soft-switching for LLC topology. This 3xhalf-bridge... | |
The silicon carbide (SiC) power MOSFET product line from Microchip increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. | |
The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. | |
TheC2M0160120D supports a nominal 17.7 Amps steady state current and may replace theC2M0080120D, 31.6 Amp MOSFET in lower power applications. The room temperatureRDS(on) of 160mΩ and maximum RDS(on)... | |
Triple Phase leg SiC MOSFET Power Module | |
Wolfspeed extends its leadership in 650V SiC technology by introducing new 120 mOhm 650 V SiC MOSFET. The 650 V SiC MOSFET portfolio is based on the latest 3rd-generation C3M... | |
Wolfspeed extends its leadership in 650V SiC technology by introducing new 25 mOhm 650 V SiC MOSFET. The 650 V SiC MOSFET portfolio is based on the latest 3rd-generation C3M... | |
Wolfspeed extends its leadership in 650V SiC technology by introducing new 45 mOhm 650 V SiC MOSFET. The 650 V SiC MOSFET portfolio is based on the latest 3rd-generation C3M... | |
Wolfspeed extends its leadership in SiC technology by introducing the industry’s lowest Rds(on) SiC MOSFET at 1200V in a discrete package. Designers can reduce component-count by moving from silicon-based,... | |
Wolfspeed extends its leadership in SiC technology by introducing the industry’s most reliable and highest performing 1200V family of power MOSFETs. Based on 3rd generation planar MOSFET technology the product... | |
Wolfspeed extends its leadership in SiC technology by introducing the industry’s most reliable and highest performing 1200V family of power MOSFETs. Based on the reliable 3rd generation planar MOSFET technology... | |
Wolfspeed has developed the XM3 power module platform to maximize the benefits of SiC, while keeping the module and system design robust, simple, and cost effective. With half the weight... | |
Wolfspeed has launched a base-plate-less module family to meet the requirements of medium power applications, providing solutions across the power electronics continuum. Wolfspeed WolfPACKTM modules are a great choice... |
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