Richardson RFPD Datasheets for Metal-Oxide Semiconductor FET (MOSFET)

Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts.
Metal-Oxide Semiconductor FET (MOSFET): Learn more

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Product Name Notes
Application Solar converter Uninterruptible Power Supplies Features Q1, Q2 SiC Power MOSFET Low RDS(on) High temperature performance Q3, Q4 Trench + field Stop IGBT3 Low voltage drop Low tail...
Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features SiC Power MOSFET High speed switching Low RDS(on) Ultra low loss SiC Schottky Diode Zero reverse...
Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode Zero reverse recovery Zero forward...
Cree’s C2M0040120D 2nd-Generation Z-FET® is a 1200V, 40mOhm RDS(on) SiC MOSFET in a TO-247-3 package Features High Speed Switching with Low Capacitances High Blocking Voltage with Low R...
Features 3rd generation SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant...
Features 900 V, SiC MOS Switching frequency up to 400 kHz Suitable for hard switching/soft switching Increased power density NTC Target Applications Power Supply Special Application Welding
Features Compact and low inductive design High frequency SiC MOSFET Integrated NTC Kelvin Emitter for improved switching performance Open Emitter configuration Temperature sensor High Blocking Voltage with low drain source...
Features High Efficient Advanced Paralleled NPC Topology Asymmetrical Inductance with Interface for Optional Regeneration of Switching Losses High Power Screw Interface Integrated DC-Snubber Capacitors Temperature Sensor Applications Solar Inverter UPS...
Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = +175C Fast and reliable...
Features SiC Power MOSFET High speed switching Low RDS(on) Ultra low loss SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature independent switching behavior Positive temperature coefficient on...
Features SiC Power MOSFET High Speed Switching Low RDS(on) Ultra low loss Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient...
Features SiC Power MOSFET Low RDS(on) High speed switching SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature independent switching behavior Positive temperature coefficient on VF Ultra-low...
Features SiC Power MOSFET Low RDS(on) High speed switching SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature independent switching behavior Positive temperature coefficient on VF Very...
Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature independent switching behavior Positive temperature coefficient on VF Kelvin...
Features SiC Power MOSFET Low RDS(on) High temperature performance Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF Kelvin...
Features SiC Power MOSFET Low RDS(on) High temperature performance Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF Very...
Features SiC-Power MOSFET´s and Schottky Diodes 3 channel boost topology Ultra Low Inductance with integrated DC-capacitors Switching frequency >100kHz Temperature sensor Target Applications Solar Inverter Power Supply
Features SiC-Power MOSFET´s and Schottky Diodes 3 phase inverter topology with split output Improved switching behavior (reduced turn on energy and X-conduction) Ultra Low Inductance with integrated DC-capacitors Switching frequency...
Features Ultra-Low Loss High Frequency Operation Zero Turn-Off Tail Current from MOSFET Normally-Off, Fail-Safe Device Operation Applications EV Chargers Solar High-Efficiency Converters / Inverters Motor and Traction Drives Smart-Grid /...
Features Ultrafast switching with SiC MOSFET and SiC boost diode Compact and low inductive design with integrated capacitors Target Applications Solar UPS
Features Very low stray inductance Internal thermistor for temperature monitoring M4 and M5 power connectors M2.5 signals connectors AlN substrate for improved thermal performance SiC Power MOSFET Low RDS(on)...
ISOTOP BOOST CHOPPER MOSFET POWER MODULE. Application: AC and DC Motor Control, Switched Mode Power Supplies, Power Factor Correction, Brake Switch. Features: Power MOS V MOSFETs, ISOTOP Package (SOT-227), Very...
ISOTOP BUCK CHOPPER MOSFET POWER MODULE. Application: AC and DC Motor Control, Switched Mode Power Supplies. Features: Power MOS V MOSFETs, ISOTOP Package (SOT-227), Very Low Stray Inductance, High Level...
Phase leg SiC MOSFET Power Module
Phase leg Super Junction MOSFET Power Module
Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode Power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly...
Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode Power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7®
Power MOS 8™ is a high speed, high voltage N-channel switch-mode Power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low...
POWER MOS IV® MOSFET
Power MOS V® is a new generation of high voltage N-Channel enhancement mode Power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power...
POWER MOS V®: Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces...
Power MOSFET Module|•N Channel, enhancement mode|•Avalanche characteristics|•Sho rt internal connections avoid oscillations|•Isolat ed copper baseplates|•All electrical connections on top for easy busbaring|•Large clearance (10mm) and creepage distances (13mm)|•UL recognized, file...
Powerex Silicon Carbide MOSFET Modules are designed for use in high frequency applications. Each module consists of two MOSFET Silicon Carbide Transistors with each transistor having a reverse connected fast...
Product Details Topology: Booster Kelvin Emitter for improved switching performance Dual Booster Bypass Diode Integrated DC capacitor Temperature sensor Chip technology (main switch): SiC MOSFET Fast reverse recovery High speed...
Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the...
Silicon Carbide Power MOSFET C2MTM Technology Features Optimized package with separate driver source pin 8mm of creepage distance between drain and source High Blocking Voltage with Low On-Resistance High...
Silicon Carbide Power MOSFET Z-FETTM MOSFET N-Channel Enhancement Mode. Features • High Speed Switching with Low Capacitances • High Blocking Voltage with Low RDS(on) • Easy to Parallel and Simple...
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features 3rd Generation SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with...
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features 3rd generation SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High...
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features 3rd generation SiC MOSFET technology Optimized package with separate driver source pin High blocking voltage with low on-resistance High speed switching...
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features C3MTM SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High blocking...
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features C3M SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with low...
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features New C3M SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with...
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features New C3M SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances New low impedance package...
Silicon Carbide Power MOSFET E-Series Automotive Features 3rd generation SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse...
Super Junction MOSFET. Ulra low RDS(ON); Low Miller Capacitance; Ultra Low Gate Charge, Qg; Avalanche Energy Rated; TO-247 Package.
Super Junction MOSFET. Ultra low RDS(ON); Low Miller Capacitance; Ultra Low Gate Charge, Qg; Avalanche Energry Rated; TO-247 or Surface Mount D3PAK Package.
Super Junction MOSFET
The AAT4618 SmartSwitch is a member of Skyworks' Application Specific Power MOSFET™ (ASPM™) product family. It is a current limited P-channel MOSFET power switch designed for high-side load switching applications...
The MSCSM120DUM08T3AG device is a 1200V/337A dual common source silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low...
The MSCSM120TLM08CAG device is a three level inverter 1200V/333A silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode: Zero reverse recovery,...
The MSCSM170AM058CD3AG device is a 1700 V/353 A phase leg silicon carbide (SiC) power module. Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode Zero reverse...
The MSCSM170DUM058AG device is a 1700V/353A dual common source silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low...
The MSCSM170DUM23T3AG device is a 1700V/124A dual common source silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low...
The MSCSM170TLM15CAG device is a three level inverter 1700V/179A silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode: Zero reverse recovery,...
The MSCSM70TLM44C3AG device is a 700V/58A three level inverter silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode (CR1 and CR2):...
The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications.
Triple Phase leg SiC MOSFET Power Module
Wolfspeed extends its leadership in SiC technology by introducing the industry’s most reliable and highest performing 1200V family of power MOSFETs. Based on 3rd generation planar MOSFET technology the product...
Wolfspeed has launched a base-plate-less module family to meet the requirements of medium power applications, providing solutions across the power electronics continuum. Wolfspeed WolfPACKTM modules are a great choice...

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