Richardson RFPD Datasheets for Metal-Oxide Semiconductor FET (MOSFET)

Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts.
Metal-Oxide Semiconductor FET (MOSFET): Learn more

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Product Name Notes
1.2-kV, 50-A Silicon Carbide Six-Pack (Three-Phase) Module Features: Zero turn-off tail current Zero reverse recovery current High-frequency operation Easy-to-drive MOS gate Pin-compatible to industry-standard, IGBT, six-pack modules Silicon Carbide replacement...
1.2kV, 13 mΩ All-Silicon Carbide Half-Bridge Module Features Ultra Low Loss High-Frequency Operation Zero Reverse Recovery Current from Diode Zero Turn-off Tail Current from MOSFET Normally-off, Fail-safe Device Operation Ease...
1.2kV, 5.0 mΩ All-Silicon Carbide Half-Bridge Module Module Features Ultra Low Loss High-Frequency Operation Zero Reverse Recovery Current from Diode Zero Turn-off Tail Current from MOSFET Normally-off, fail-safe device operation...
1.2kV, 80 mΩ Silicon Carbide Six-Pack (Three Phase) Module Features Ultra Low Loss High-Frequency Operation Zero Reverse Recovery Current from Diode Zero Turn-off Tail Current from MOSFET Normally-off, Fail-safe Device...
1.7kV, 8.0 mΩ All-Silicon Carbide Half-Bridge Module Features Ultra Low Loss High-Frequency Operation Zero Reverse Recovery Current from Diode Zero Turn-off Tail Current from MOSFET Normally-off, Fail-safe Device Operation Ease...
1200 V, 175 A, Silicon Carbide, Half-Bridge Module Technical Features Industry Standard 62mm Footprint Ultra Low Loss, High-Frequency Operation Zero Reverse Recovery from Diodes Zero Turn-off Tail Current from MOSFET...
1200 V, 350 A, Silicon Carbide, Half-Bridge Module Technical Features Industry Standard 62mm Footprint Ultra Low Loss, High-Frequency Operation Zero Reverse Recovery from Diodes Zero Turn-off Tail Current from MOSFET...
1200 V, 480 A All-Silicon Carbide High Performance, Switching Optimized, Half-Bridge Module Technical Features Low Inductance, Low Profile 62mm Footprint High Junction Temperature (175 C) Operation Implements Switching Optimized Third...
1200 V, 530 A, Silicon Carbide, Half-Bridge Module Technical Features Industry standard 62mm Footprint Ultra Low Loss, High-Frequency Operation Zero Reverse Recovery from Diodes Zero Turn-off Tail Current from MOSFET...
1200 V, 760 A All-Silicon Carbide High Performance, Switching Optimized, Half-Bridge Module Technical Features Low Inductance, Low Profile 62mm Footprint High Junction Temperature (175 C) Operation Implements Switching Optimized Third...
150V, 200A, Insulated type 6-element pack, NTC Thermistor inside
2nd-Generation Z-FET® 25-mΩ, 1200-V, SiC MOSFET Features High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive Resistant to Latch-Up Avalanche...
3300V Silicon Carbide (SiC) MOSFET MOSFET-SiC-3300V is part of our newest family of SiC MOSFET devices. Microchip's SiC solutions focus on high performance helping to maximize system efficiency and minimize...
1200 V, 760 A, Silicon Carbide High-Performance, Half-Bridge Module Same electrical performance as the CAB760M12HM3. The R in CAB760M12HM3R designates that the pins are on the right-hand side of the...
Features 3rd generation SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High blocking voltage with low On-resistance High speed switching...
Features C3M SiC MOSFET technlogy High blocking voltage with low RDS(on) Easy to parallel and simple to drive Resistant to Latch-up High Gate Resistance for Drives Benefits Higher System Efficiency...
Features High blocking voltage with industry leading low RDS(on) over temperature stability Fast intrinsic diode with low reverse recovery charge (Qrr) High-speed switching with low output capacitance Low conduction losses...
Features High blocking voltage with low on-resistance Resistant to Latch-up Fast intrinsic diode with low reverse recovery (Qrr) Easy to parallel and simple to drive Benefits Higher System Efficiency Low...
Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = +175C Fast and reliable...
Silicon Carbide Power MOSFET C2M MOSFET Technology Features C2M SiC MOSFET technlogy High Blocking Voltage with Low on resistance High Speed Switching with Low Capacitances Easy to Parallel and Simple...
Silicon Carbide Power MOSFET C3M MOSFET Technology Features High Blocking Voltage with Low on resistance Resistant to Latch-up Fast intrinsic diode with low reverse recovery (Qrr) Easy to Parallel and...
Silicon Carbide Power MOSFET C3MTMMOSFET Technology Features 3rd generation SiC MOSFET technology Optimized package with separate driver source pin High blocking voltage with low on-resistance High speed switching...
Application Solar converter Uninterruptible Power Supplies Features Q1, Q2 SiC Power MOSFET Low RDS(on) High temperature performance Q3, Q4 Trench + field Stop IGBT3 Low voltage drop Low tail...
Application Uninterruptible Power Supplies Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient...
Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features SiC Power MOSFET High speed switching Low RDS(on) Ultra low loss SiC Schottky Diode Zero reverse...
Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode Zero reverse recovery Zero forward...
Automotive Qualified 1200 V, 450 A All-Silicon Carbide Conduction-Optimized , Half-Bridge Module Technical Features High Power Density Footprint High Junction Temperature (175 C) Operation Low Inductance (6.7 nH) Design Implements...
C2M1000170D is ideal for power supplies to 200W operating from DC inputs from 200V to 1000V. This product beats silicon MOSFETs on switching efficiency, operating frequency, blocking voltage characteristics and...
Cree’s C2M0040120D 2nd-Generation Z-FET® is a 1200V, 40mOhm RDS(on) SiC MOSFET in a TO-247-3 package Features High Speed Switching with Low Capacitances High Blocking Voltage with Low R...
Faster, cooler and even more efficient, this new power module is the first-choice H-bridge for switching frequencies up to 400 kHz. Featuring a 900 V SiC MOSFET, it tops 1200...
Features 3rd generation SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant...
Features 3rd generation SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High blocking voltage with low On-resistance High speed switching...
Features 3rd generation SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High blocking voltage with low on-resistance High-speed switching with...
Features 3x Booster with SiC MOSFET and SiC Diode Ultrafast switching Low inductive design Target Applications Solar UPS
Features 900 V, SiC MOS Switching frequency up to 400 kHz Suitable for hard switching/soft switching Increased power density NTC Target Applications Power Supply Special Application Welding & Cutting
Features 900 V, SiC MOS Switching frequency up to 400 kHz Suitable for hard switching/soft switching Increased power density NTC Target Applications Power Supply Special Application Welding
Features C3M SiC MOSFET technology Standard industrial housing Low inductive design Optimized Rth(j-s) with Phase Change Material Built-in NTC Applications Charging Stations Energy Storage Systems Power Supply Solar Inverters Welding...
Features Compact and low inductive design High frequency SiC MOSFET Integrated NTC Kelvin Emitter for improved switching performance Open Emitter configuration Temperature sensor High Blocking Voltage with low drain source...
Features CreeTM Silicon Carbide Power MOSFET CreeTM Silicon Carbide Power Schottky Diode Dual Boost Topology Ultra Low Inductance with Integrated DC-capacitors Extremely Fast Switching with No ""Tail"" Current...
Features CreeTM Silicon Carbide Power MOSFET CreeTM Silicon Carbide Power Schottky Diode MNPC Topology with Splitted Output Ultra Low Inductance with Integrated DC-capacitors Extremely Fast Switching with No...
Features H-bridge or 2x half-bridge SiC MOS fsw up to 250kHz Thermistor Target Applications Power Supply
Features High Blocking Voltage with Low On-Resistance High Speed Switching with Low Capacitances Easy to Parallel and Simple to Drive Resistant to Latch-up Halogen Free, RoHS Compliant Benefits Higher System...
Features High blocking voltage with low on-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Easy to parallel and simple to drive Gold back...
Features High blocking voltage with low RDS(on) Easy to parallel and simple to drive Low parasitic inductance Separate driver source pin Ultra-low drain-gate capacitance Halogen Free, RoHS compliant Benefits...
Features High Efficient Advanced Paralleled NPC Topology Asymmetrical Inductance with Interface for Optional Regeneration of Switching Losses High Power Screw Interface Integrated DC-Snubber Capacitors Temperature Sensor Applications Solar Inverter UPS...
Features High frequency SiC MOSFET Compact and low inductive design Target Applications Solar
Features Industry-Leading, Reliable 3rd Generation Silicon Carbide MOSFET Technology in Robust, Well-Established 62mm Form Factor Strong Thermal Performance + Robust CTE Matching with Aluminum Nitride Substrate + Copper Baseplate Low-Inductance...
Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = +175C Fast and reliable...
Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = 175 C Fast and reliable...
Features Minimum of 900V Vbr across entire operating temperature range High blocking voltage with low RDS(on) Fast intrinsic diode with low reverse recovery charge (Qrr) High-speed switching with low output...
Features No reverse recovery Low forward voltage Low leakage current Avalanche energy rated RoHS compliant Isolated voltage to 2500 V Benefits Outstanding performance at high-frequency operation Direct mounting to heatsink...
Features Rohm™ Silicon Carbide Power MOSFET Rohm™ Silicon Carbide Power Schottky Diode MNPC Topology with Splitted Output Ultra Low Inductance with Integrated DC-capacitors Extremely Fast Switching with No ""Tail"" Current...
Features RohmTM SiC-Power MOSFET´s and Schottky Diodes Dual Boost Topology Ultra Low Inductance with Integrated DC-capacitors Extremely Fast Switching with No ""Tail"" Current Solderless Press-fit Mounting Technology Temperature sensor...
Features SiC Power MOSFET: Low RDS(on), High speed switching, Ultra low loss SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF...
Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive High level of integration M6 power connectors Aluminum Nitride (AlN) substrate for improved thermal performance Benefits...
Features SiC Power MOSFET: Low RDS(on), High temperature performance M2.5 signals connectors Very Low stray inductance M4 and M5 power connectors Internal thermistor for temperature monitoring Aluminum Nitride (AlN) substrate...
Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF Low stray inductance...
Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient on VF Very low...
Features SiC Power MOSFET Low RDS(on) High temperature performance Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF Benefits...
Features SiC Power MOSFET Low RDS(on) High temperature performance Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF Kelvin...
Features SiC Power MOSFET Low RDS(on) High temperature performance Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF Very...
Features SiC-Power MOSFET´s and Schottky Diodes 3 channel boost topology Ultra Low Inductance with integrated DC-capacitors Switching frequency >100kHz Temperature sensor Target Applications solar inverter Power Supply
Features SiC-Power MOSFET´s and Schottky Diodes 3 phase inverter topology with split output Improved switching behavior (reduced turn on energy and X-conduction) Ultra Low Inductance with integrated DC-capacitors Switching frequency...
Features Sixpack with three separated legs Solderless Press-fit Mounting Technology Target Applications Battery Charger
Features Split Advanced NPC topology Ultra-high switching frequency with SiC MOSFETs Split topology for better thermal performance No x-conduction at high frequencies Target Applications Solar Inverter
Features Symmetric Boost for 1500Vdc applications Full SiC for ultra high speed frequencies Target Applications Solar Inverters
Features Three-leg Booster module Full SiC for ultra fast switching frequency Low inductive package Ultra high efficient Target Applications Solar
Features Ultra-Low Loss High Frequency Operation Zero Turn-Off Tail Current from MOSFET Normally-Off, Fail-Safe Device Operation Applications EV Chargers Solar High-Efficiency Converters / Inverters Motor and Traction Drives Smart-Grid /...
Features Ultrafast switching with SiC MOSFET and SiC boost diode Compact and low inductive design with integrated capacitors Target Applications Solar UPS
Features Very low stray inductance Internal thermistor for temperature monitoring M4 and M5 power connectors M2.5 signals connectors AlN substrate for improved thermal performance SiC Power MOSFET Low RDS(on)...
Features Wolfspeed(Cree)™ Silicon Carbide Power MOSFET, C2M™ MOSFET Technology Sixpack with three separated legs Solderless Press-fit Mounting Technology Target Applications Battery Charger
Full - Bridge MOSFET Power Module
FULL - BRIDGE SUPER JUNCTION MOSFET POWER MODULE. Application: Welding Converters, Switched Mode Power Supplies, Uninterruptible Power Supplies, Motor Control. Features: COOLMOS, Very Low Stray Inductance, Internal Thermistor for Temperature...
FULL - BRIDGE SUPER JUNCTION MOSFET POWER MODULE. Application: Welding Converters, Switched Mode Power Supplies, Uninterruptible Power Supplies. Features: COOLMOS, Kelvin Source for Easy Drive, Very Low Stray Inductance, Internal...
FULL - BRIDGE SUPER JUNCTION MOSFET POWER MODULE. Application: Welding Converters, Switched Mode Power Supplies, Uninterruptible Power Supplies. Features: COOLMOS, Very Low Stray Inductance, Internal Thermistor for Temperature Monitoring, High...
ISOTOP BOOST CHOPPER MOSFET POWER MODULE. Application: AC and DC Motor Control, Switched Mode Power Supplies, Power Factor Correction, Brake Switch. Features: Power MOS V MOSFETs, ISOTOP Package (SOT-227), Very...
ISOTOP BOOST CHOPPER MOSFET POWER MODULE
ISOTOP BOOST CHOPPER SUPER JUNCTION MOSFET POWER MODULE. Application: AC and DC Motor Control, Switched Mode Power Supplies, Power Factor Correction, Brake Switch. Features: COOLMOS, ISOTOP Package (SOT-227), Very Low...
ISOTOP BUCK CHOPPER MOSFET POWER MODULE. Application: AC and DC Motor Control, Switched Mode Power Supplies. Features: Power MOS 7 MOSFETs, ISOTOP Package (SOT-227), Very Low Stray Inductance, High Level...
ISOTOP BUCK CHOPPER MOSFET POWER MODULE. Application: AC and DC Motor Control, Switched Mode Power Supplies. Features: Power MOS V MOSFETs, ISOTOP Package (SOT-227), Very Low Stray Inductance, High Level...
ISOTOP® Boost chopper SiC MOSFET + SiC chopper diode Power module
ISOTOP® Boost chopper SiC MOSFET + SiC chopper diode Power module Benefits Outstanding performance at high frequency operation Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low...
Linear MOSFET Power Module (Single Switch). Application: Electronic load dedicated to power supplies and battery discharge testing. Features: Linear MOSFET, Very low stray inductance, Internal thermistor for temperature monitoring, High...
Linear MOSFETs are optimized for applications operating in the Linear region where concurrent high voltage and high current can occur at near DC conditions (>100 msec).
Microsemi manufacturer’s part number: APTMC120AM20CT1AG Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode...
Phase leg MOSFET Power Module
Phase leg SiC MOSFET Power Module
PHASE LEG SUPER JUNCTION MOSFET POWER MODULE. Application: Welding Converters, Switched Mode Power Supplies, Uninterruptible Power Supplies, Motor Control. Features: COOLMOS, Very Low Stray Inductance, Internal Thermistor for Temperature Monitoring,...
Phase leg Super Junction MOSFET Power Module
Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode Power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly...
POWER MOS 7® MOSFET: Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power...
Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode Power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7®
Power MOS 8™ is a high speed, high voltage N-channel switch-mode Power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low...
POWER MOS IV® MOSFET
POWER MOS IV®. N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS.
Power MOS V® is a new generation of high voltage N-Channel enhancement mode Power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power...
POWER MOS V®. Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces...
POWER MOS V®: Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces...
Powerex MOSFET Modules are designed for use in low voltage switching applications. Each module consists of 6 MOSFET switches with low Rds(on) and a fast recovery body diode to yield...
Product Details Topology: Booster Kelvin Emitter for improved switching performance Dual Booster Bypass Diode Integrated DC capacitor Temperature sensor Chip technology (main switch): SiC MOSFET Fast reverse recovery High speed...
Richardson RFPD is over-stocked on this Vincotech Silicon Carbide module and willing to negotiate on pricing to support your requirement. These are all original manufacturers’ modules. Contact us for samples...
Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the...
Silicon carbide (SiC) power MOSFET product line from Microsemi increase your performance over silicon MOSFET and silicon IGBT solutions while lowering your total cost of ownership for high-voltage applications. Features...
Silicon Carbide Power MOSFET C2MTM Technology Features Optimized package with separate driver source pin 8mm of creepage distance between drain and source High Blocking Voltage with Low On-Resistance High...
Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode Features 3rd generation SiC MOSFET technology High blocking voltage with low on-resistance High-speed switching with low capacitances Fast intrinsic diode with...
Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode Features 3rd generation SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source...
Silicon Carbide Power MOSFET Z-FETTM MOSFET Features High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive Resistant to...
Silicon Carbide Power MOSFET Z-FETTM MOSFET N-Channel Enhancement Mode. Features • High Speed Switching with Low Capacitances • High Blocking Voltage with Low RDS(on) • Easy to Parallel and Simple...
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features 3rd Generation SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode...
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features 3rd Generation SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with...
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features 3rd Generation SiC MOSFET technology Low inductance package with separate driver source pin 7mm of creepage distance between drain and source...
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features 3rd generation SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High...
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features 3rd generation SiC MOSFET technology Optimized package with separate driver source pin High blocking voltage with low on-resistance High speed switching...
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features C3MTM SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High blocking...
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features C3M SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with low...
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features C3MTM SiC MOSFET technology Low impedance package with driver source pin 7mm of creepage distance between drain and source High...
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features C3MTM SiC MOSFET technology Low parasitic inductance with separate driver source pin 7mm of creepage distance between drain and source...
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features C3MTM SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High...
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features New C3M SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with...
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features New C3M SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances New low impedance package...
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features New C3M SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High...
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Wolfspeed continues its leadership in SiC technology by offering MOSFETs in a wide variety of on-resistances and package options, enabling designers to...
Silicon Carbide Power MOSFET E-Series Automotive Features 3rd generation SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse...
SINGLE DIE ISOTOP PACKAGE. N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS.
Single switch with Series diode Trench + Field Stop IGBT4
Super Junction MOSFET. Ulra low RDS(ON); Low Miller Capacitance; Ultra Low Gate Charge, Qg; Avalanche Energy Rated; TO-247 Package.
Super Junction MOSFET. Ultra low RDS(ON); Low Miller Capacitance; Ultra Low Gate Charge, Qg; Avalanche Energry Rated; Extreme dv/dt Rated, Popular TO-247 or Surface Mount D3 Package.
Super Junction MOSFET. Ultra low RDS(ON); Low Miller Capacitance; Ultra Low Gate Charge, Qg; Avalanche Energry Rated; Popular T-MAX or TO-264 Package.
Super Junction MOSFET. Ultra low RDS(ON); Low Miller Capacitance; Ultra Low Gate Charge, Qg; Avalanche Energry Rated; TO-247 or Surface Mount D3PAK Package.
Super Junction MOSFET. Ultra low RDS(ON); Low Miller Capacitance; Ultra Low Gate Charge, Qg; Avalanche Energry Rated; TO-264 Max Package.
Super Junction MOSFET
Technical Features Ultra-Low Loss, High Frequency Operation Low Forward Voltage (VF) Drop with Positive Temperature Coefficient Zero Reverse Recovery Current Zero Forward Recovery Voltage Temperature-Independ ent Switching Behavior...
Technical Features Ultra-Low Loss, High Frequency Operation Low Forward Voltage (VF) Drop with Positive Temperature Coefficient Zero Reverse Recovery Current Zero Forward Recovery Voltage Temperature-Independ ent Switching Behavior Applications Railway,...
Technical Features Ultra-Low Loss, High Frequency Operation Zero Turn-Off Tail Current from MOSFET Normally-Off, Fail-Safe Device Operation Anti-Parallel Schottky Diode Temperature-Independ ent Switching Behavior Applications Railway, Traction, and Motor Drives...
Technical Features Ultra-Low Loss High Frequency Operation Zero Turn-Off Tail Current from MOSFET Normally-Off, Fail-Safe Device Operation Applications Railway, Traction, and Motor Drives EV Chargers High-Efficiency Converters / Inverters Renewable...
The AAT4280 SmartSwitch is a P-channel MOSFET power switch designed for high-side load switching applica­tions. The P-channel MOSFET device has a typical RDS(ON) of 80mW, allowing increased load switch power...
The AAT4616 SmartSwitch is a current limited P-channel MOSFET power switch designed for high side load switching applications. This switch operates with inputs ranging from 2.4V to 5.5V, making it...
The AAT4618 SmartSwitch is a member of Skyworks' Application Specific Power MOSFET™ (ASPM™) product family. It is a current limited P-channel MOSFET power switch designed for high-side load switching applications...
The AAT4712 is a programmed, current limited P-channel MOSFET power switch designed for high-side load-switching applications for SSD memory buffer saving solutions. With the programmed current limit, the AAT4712 ensures...
The new fastPACK SiC E1 has been developed with the aim to make the EV offboard charger designs faster, smaller and more efficient. The module is based on latest 650V...
The new flowPACK 1 SiC is faster than 1200 V SiC MOSFETs, safer than 650 V MOSFETs and perfect for charging stations that require soft-switching for LLC topology. This 3xhalf-bridge...
The silicon carbide (SiC) power MOSFET product line from Microchip increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications.
The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications.
TheC2M0160120D supports a nominal 17.7 Amps steady state current and may replace theC2M0080120D, 31.6 Amp MOSFET in lower power applications. The room temperatureRDS(on) of 160mΩ and maximum RDS(on)...
Triple Phase leg SiC MOSFET Power Module
Wolfspeed extends its leadership in 650V SiC technology by introducing new 120 mOhm 650 V SiC MOSFET. The 650 V SiC MOSFET portfolio is based on the latest 3rd-generation C3M...
Wolfspeed extends its leadership in 650V SiC technology by introducing new 25 mOhm 650 V SiC MOSFET. The 650 V SiC MOSFET portfolio is based on the latest 3rd-generation C3M...
Wolfspeed extends its leadership in 650V SiC technology by introducing new 45 mOhm 650 V SiC MOSFET. The 650 V SiC MOSFET portfolio is based on the latest 3rd-generation C3M...
Wolfspeed extends its leadership in SiC technology by introducing the industry’s lowest Rds(on) SiC MOSFET at 1200V in a discrete package. Designers can reduce component-count by moving from silicon-based,...
Wolfspeed extends its leadership in SiC technology by introducing the industry’s most reliable and highest performing 1200V family of power MOSFETs. Based on 3rd generation planar MOSFET technology the product...
Wolfspeed extends its leadership in SiC technology by introducing the industry’s most reliable and highest performing 1200V family of power MOSFETs. Based on the reliable 3rd generation planar MOSFET technology...
Wolfspeed has developed the XM3 power module platform to maximize the benefits of SiC, while keeping the module and system design robust, simple, and cost effective. With half the weight...
Wolfspeed has launched a base-plate-less module family to meet the requirements of medium power applications, providing solutions across the power electronics continuum. Wolfspeed WolfPACKTM modules are a great choice...

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