MMA052AA is a self-biased gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high-electron-mobili
ty transistor (pHEMT) distributed amplifier in die form that operates between DC and 26 GHz. It is ideal for test instrumentation, wideband military and space applications. The amplifier provides a 15 dB of gain with a rising slope, 3.5 dB noise figure, and 29 dBm of output power at 3 dB gain compression with the nominal bias of 235 mA from a 10 V supply. Output IP3 is typically 35 dBm. The MMA052AA amplifier is DC coupled and features RF I/Os that are internally matched to 50 Ohm.
MMA052AA is a self-biased gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high-electron-mobility transistor (pHEMT) distributed amplifier in die form that operates between DC and 26 GHz. It is ideal for test instrumentation, wideband military and space applications. The amplifier provides a 15 dB of gain with a rising slope, 3.5 dB noise figure, and 29 dBm of output power at 3 dB gain compression with the nominal bias of 235 mA from a 10 V supply. Output IP3 is typically 35 dBm. The MMA052AA amplifier is DC coupled and features RF I/Os that are internally matched to 50 Ohm.
