MACOM RF & MW Power Amplifier MAAP-015035-DIE

Description
Power Amplifier, 12 W, 8.5 - 11.5 GHz. The MAAP-015035 is a three stage 8.5 - 11.5 GHz GaAs pHEMT MMIC power amplifier capable of achieving a saturated pulsed output power of 41 dBm and a small signal gain of 36 dB. The gate terminals of the power amplifier can be biased directly using a direct gate voltage or using an on chip gate bias circuit. The chip includes surface passivation for added protection and reliability This device is well suited for communication and radar applications.
Request a Quote Datasheet
Description
Power Amplifier, 12 W, 8.5 - 11.5 GHz. The MAAP-015035 is a three stage 8.5 - 11.5 GHz GaAs pHEMT MMIC power amplifier capable of achieving a saturated pulsed output power of 41 dBm and a small signal gain of 36 dB. The gate terminals of the power amplifier can be biased directly using a direct gate voltage or using an on chip gate bias circuit. The chip includes surface passivation for added protection and reliability This device is well suited for communication and radar applications.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
RF & MW Power Amplifier - MAAP-015035-DIE - Richardson RFPD
Downers Grove, IL, United States
RF & MW Power Amplifier
MAAP-015035-DIE
RF & MW Power Amplifier MAAP-015035-DIE
Power Amplifier, 12 W, 8.5 - 11.5 GHz. The MAAP-015035 is a three stage 8.5 - 11.5 GHz GaAs pHEMT MMIC power amplifier capable of achieving a saturated pulsed output power of 41 dBm and a small signal gain of 36 dB. The gate terminals of the power amplifier can be biased directly using a direct gate voltage or using an on chip gate bias circuit. The chip includes surface passivation for added protection and reliability This device is well suited for communication and radar applications.

Power Amplifier, 12 W, 8.5 - 11.5 GHz. The MAAP-015035 is a three stage 8.5 - 11.5 GHz GaAs pHEMT MMIC power amplifier capable of achieving a saturated pulsed output power of 41 dBm and a small signal gain of 36 dB. The gate terminals of the power amplifier can be biased directly using a direct gate voltage or using an on chip gate bias circuit. The chip includes surface passivation for added protection and reliability This device is well suited for communication and radar applications.

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category RF Amplifiers
Product Number MAAP-015035-DIE
Product Name RF & MW Power Amplifier
Amplifier Type Power Amplifier
Unlock Full Specs
to access all available technical data

Similar Products

Broadband Preamplifiers - Model PAM-0204 - A.H. Systems Inc.
Specs
Amplifier Type Low Noise Amplifier; Broadband Preamplifier
Applications Mobile / Wireless Systems; EMC/EMI Testing
Frequency Range 20 to 4000 MHz
View Details
2 - 26 GHz GaAs Surface Mount LO Driver Amplifier - AMM-10220PSM - Marki Microwave LLC
Specs
Frequency Range 2000 to 26000 MHz
Package Type Surface Mount; surface-mount
View Details
Low Phase Noise Amplifiers - HX2400 - Maury Microwave
Specs
Amplifier Type Low Noise Amplifier
Frequency Range 8 to 4000 MHz
Minimum Gain 14 dB
View Details
RF Amplifiers - AWL6152M7P8 - 912297-AWL6152M7P8 - Win Source Electronics
Specs
Applications RF Microwave
Package Type Surface Mount
View Details