MACOM RF & MW Power Amplifier MAAP-015035-DIE

Description
Power Amplifier, 12 W, 8.5 - 11.5 GHz. The MAAP-015035 is a three stage 8.5 - 11.5 GHz GaAs pHEMT MMIC power amplifier capable of achieving a saturated pulsed output power of 41 dBm and a small signal gain of 36 dB. The gate terminals of the power amplifier can be biased directly using a direct gate voltage or using an on chip gate bias circuit. The chip includes surface passivation for added protection and reliability This device is well suited for communication and radar applications.
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Description
Power Amplifier, 12 W, 8.5 - 11.5 GHz. The MAAP-015035 is a three stage 8.5 - 11.5 GHz GaAs pHEMT MMIC power amplifier capable of achieving a saturated pulsed output power of 41 dBm and a small signal gain of 36 dB. The gate terminals of the power amplifier can be biased directly using a direct gate voltage or using an on chip gate bias circuit. The chip includes surface passivation for added protection and reliability This device is well suited for communication and radar applications.
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Suppliers

Company
Product
Description
Supplier Links
RF & MW Power Amplifier - MAAP-015035-DIE - Richardson RFPD
Downers Grove, IL, United States
RF & MW Power Amplifier
MAAP-015035-DIE
RF & MW Power Amplifier MAAP-015035-DIE
Power Amplifier, 12 W, 8.5 - 11.5 GHz. The MAAP-015035 is a three stage 8.5 - 11.5 GHz GaAs pHEMT MMIC power amplifier capable of achieving a saturated pulsed output power of 41 dBm and a small signal gain of 36 dB. The gate terminals of the power amplifier can be biased directly using a direct gate voltage or using an on chip gate bias circuit. The chip includes surface passivation for added protection and reliability This device is well suited for communication and radar applications.

Power Amplifier, 12 W, 8.5 - 11.5 GHz. The MAAP-015035 is a three stage 8.5 - 11.5 GHz GaAs pHEMT MMIC power amplifier capable of achieving a saturated pulsed output power of 41 dBm and a small signal gain of 36 dB. The gate terminals of the power amplifier can be biased directly using a direct gate voltage or using an on chip gate bias circuit. The chip includes surface passivation for added protection and reliability This device is well suited for communication and radar applications.

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category RF Amplifiers
Product Number MAAP-015035-DIE
Product Name RF & MW Power Amplifier
Amplifier Type Power Amplifier
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