Richardson RFPD Datasheets for RF Amplifiers
RF amplifiers are devices that accept a varying input signal and produce an output signal that varies in the same way, but with larger amplitude.
RF Amplifiers: Learn more
| Product Name | Notes |
|---|---|
| 1 MHz to 2.7 GHz RF Gain Block | |
| 10 MHz to 3 GHz VGA with 60dB Gain Control Range | |
| 18-30GHz Low Noise Amplifier. GaAs Monolithic Microwave IC in SMD leadless package. The CHA2069-QDG is a three-stage self-biased wide band monolithic low noise amplifier. Typical applications range from telecommunication (point... | |
| 1800 MHz to 2700 MHz 1 W RF Driver Amplifier. The ADL5606 is a broadband, two-stage, 1 W RF driver amplifier that operates over a frequency range of 1800 MHz... | |
| 2-18 GHZ Low Noise Amplifier. GaAs Monolithic Microwave IC. UMS develops a 2-18GHz wide band low noise amplifier. The wide frequency band associated to a 2dB low noise figure makes... | |
| 2-22 GHz LNA with AGC. The CHA3024-99F is a distributed Low Noise Amplifier with Adjustable Gain Control (AGC) which operates between 2 and 22 GHz. It is designed for a... | |
| 2-22 GHz LNA with AGC. The CHA3024-QGG is a distributed Low Noise Amplifier with Adjustable Gain Control (AGC) that operates between 2 and 22 GHz. It is designed for a... | |
| 20 MHz to 1.0 GHz IF Gain Block. The ADL5535 is a 16 dB linear amplifier that operates at frequencies up to 1 GHz. The device can be used in... | |
| 20 MHz to 500 MHz Dual IF Amplifier. The ADL5534 contains two broadband, fixed-gain, linear amplifiers and operates at frequencies up to 500 MHz. The device can be used in... | |
| 20 MHz to 500 MHz IF Gain Block. The ADL5531 is a broadband, fixed-gain, linear amplifier that operates at frequencies up to 500 MHz. The device can be used in... | |
| 400 MHz to 4000 MHz Low Noise Amplifier. The ADL5521 is a high performance GaAs pHEMT low noise amplifier. It provides high gain and low noise figure for single-downconversio n... | |
| 400 MHz to 4000 MHz Low Noise Amplifier. The ADL5523 is a high performance GaAs pHEMT low noise amplifier. It provides high gain and low noise figure for single-downconversio n... | |
| 5.8-17 GHz Low Noise Amplifier. GaAs Monolithic Microwave IC in SMD leadless package. The CHA3656-QAG is a two-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with... | |
| 6-18GHz Amplifier; GaAs Monolithic Microwave IC. The CHA3511 is composed of a Single Pole Single Through (SPST) switch followed by a double stage traveling wave amplifier. It is designed for... | |
| 7-11 GHz Low Noise Amplifier GaAs Monolithic Microwave IC. The CHA1010-99F is a monolithic two-stage wide-band low noise amplifier. It is designed for a wide range of applications, from professional... | |
| 700 MHz to 1000 MHz 1 W RF Driver Amplifier. The ADL5605 is a broadband, two-stage, 1 W RF driver amplifier that operates over a frequency range of 700 MHz... | |
| 700 MHz to 2700 MHz 1 W RF Driver Amplifier. The ADL5604 is a very broadband RF driver amplifier that operates over the wide frequency range of 700 MHz to... | |
| 80-105 GHz Balanced Low Noise Amplifier. GaAs Monolithic Microwave IC. UMS develops a balanced, four-stage, low noise monolithic amplifier which operates between 80 and 105GHz. This broadband amplifier delivers 16dB... | |
| Airfast Power Amplifier Module The A5M20TG042 is a Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive... | |
| A packaged monolithic 34-44GHz low noise amplifier delivering 24dB linear gain associated with 3dB of noise figure, featuring up to 13dBm output power at P-1dB gain compression. Moreover it is... | |
| ALM-1222 is a very low noise, high linearity balanced amplifier module operating in the 1.8 to 2.2GHz frequency range. The exceptional noise and linearity performances are achieved through the use... | |
| AM-119 is a coupler feedback amplifier with high intercept and compression points. The use of coupler feedback minimizes noise figure and current in a high intercept amplifier. This amplifier is... | |
| AM-123 is a coupler feedback amplifier with high intercept and compression points. The use of coupler feedback minimizes noise figure and current in a high intercept amplifier. This amplifier is... | |
| AM-145 is a coupler feedback amplifier with high intercept and compression points. The use of coupler feedback minimizes noise figure and current in a high intercept amplifier. This amplifier is... | |
| AM-146 is a coupler feedback amplifier with high intercept and compression points. The use of coupler feedback minimizes current in a high intercept amplifier. This amplifier is packaged in a... | |
| GaAs Monolithic Microwave IC in SMD leadless package. The CHA3664-QAG is a two-stage self-biased general purpose monolithic medium power amplifier. The circuit is manufactured with a power pHEMT process: 0.25µm... | |
| MACOM’s AM42-0046 is a three stage MMIC power amplifier in a lead-free, bolt down ceramic package, allowing easy assembly. The AM42- 0046 employs a fully matched chip with internally decoupled... | |
| MACOM's AM-131 is a coupler feedback amplifier with high intercept and compression points. The use of coupler feedback minimizes noise figure and current in a high intercept amplifier. This amplifier... | |
| MACOM's AM-143 is a coupler feedback amplifier with low noise figure and high intercept points for the low bias current. The use of coupler feedback minimizes noise figure and current... | |
| MACOM's AM-147 is a coupler feedback amplifier with high intercept and compression points. The use of coupler feedback minimizes noise figure and current in a high intercept amplifier. This amplifier... | |
| MACOM's AM-153 is a coupler feedback amplifier with low noise figure. The use of coupler feedback minimizes noise figure and current in a high intercept amplifier. This amplifier is packaged... | |
| MACOM's AM-155 is a coupler feedback amplifier with high intercept and compression points. The use of coupler feedback minimizes noise figure and current in a high intercept amplifier. This amplifier... | |
| MACOM's AM-160 is a coupler feedback amplifier with high intercept and compression points. The use of coupler feedback minimizes noise figure and current in a high intercept amplifier. This amplifier... | |
| MACOM's AM-162 is a coupler feedback amplifier with high intercept and compression points. The use of coupler feedback minimizes noise figure and current in a high intercept amplifier. This amplifier... | |
| MACOM's AM-176 is a feedback amplifier with high intercept and compression points. This amplifier is packaged in a TO-8 package. Due to the internal power dissipation the thermal rise should... | |
| MACOM's AM-182 is a high gain feedback amplifier with high intercept and compression points. This amplifier is packaged in a TO-8 package. Due to the internal power dissipation the thermal... | |
| MACOM's AM-183 is a feedback amplifier with high intercept and compression points. This amplifier is packaged in a TO-8 package. Due to the internal power dissipation the thermal rise should... | |
| MACOM's AM-184 is a feedback amplifier with high intercept and compression points. This amplifier is packaged in a TO-8 package. Due to the internal power dissipation the thermal rise should... | |
| Microwave amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This single stage PHEMT feedback amplifier design displays impressive performance characteristics... | |
| Microwave amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This two stage GaAs FET feedback amplifier design displays impressive performance... | |
| RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. The 2 stage silicon bipolar feedback amplifier design displays impressive performance... | |
| RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This 2 stage bipolar transistor feedback amplifier design displays impressive performance... | |
| RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This feedback amplifier design uses 2 GaAs FET transistors In parallel,... | |
| RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This push-pull cascade design offers the benefits of low noise figure... | |
| RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This single stage bipolar transistor feedback amplifier design displays impressive performance... | |
| RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This single stage GaAs FET feedback amplifier design displays impressive performance... | |
| RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for consistent performance and high reliability. This 2 stage bipolar transistor feedback amplifier design displays impressive performance... | |
| RF amplifier is a discrete thin film hybrid design, which incorporates the use of thin film manufacturing processes for accurate performance and high reliability. This single stage bipolar transistor feedback... | |
| Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the... | |
| Second generation mMIMO Power Amplifier Module (PAM) with increased power and efficiency over previous generations. The compact, surface mount device is footprint compatible with the other PAM's, enabling the designer... | |
| The A18-1 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This single stage GaAs FET feedback amplifier design displays... | |
| The A2I09VD030N wideband integrated circuit is designed with on-chip matching that makes it usable from 575 to 960 MHz. This multi-stage structure is rated for 48 to 55 V operation... | |
| The A2I09VD050N wideband integrated circuit is designed with on-chip matching that makes it usable from 575 to 960 MHz. This multi-stage structure is rated for 48 to 55 V operation... | |
| The A2I20D020N wideband integrated circuit is designed with on-chip matching that makes it usable from 1400 to 2200 MHz. This multi-stage structure is rated for 20 to 32 V operation... | |
| The A2I20D040N wideband integrated circuit is designed with on-chip matching that makes it usable from 1400 to 2200 MHz. This multi-stage structure is rated for 20 to 32 V operation... | |
| The A2I20H060N wideband integrated circuit is an asymmetrical Doherty designed with on-chip matching that makes it usable from 1800 to 2200 MHz. This multi-stage structure is rated for 26 to... | |
| The A2I35H060N wideband integrated circuit is an asymmetrical Doherty designed with on-chip matching that makes it usable from 3400 to 3800 MHz. This multi-stage structure is rated for 26 to... | |
| The A3I20X050GN integrated Doherty circuit is designed with on-chip matching that makes it usable from 1800 to 2200 MHz. This multi-stage structure is rated for 20 to 32 V operation... | |
| The A3I20X050N integrated Doherty circuit is designed with on-chip matching that makes it usable from 1800 to 2200 MHz. This multi-stage structure is rated for 20 to 32 V operation... | |
| The A3I25D080N integrated Doherty circuit is designed with on chip matching that makes it usable from 2300 to 2690 MHz. This multi-stage structure is rated for 20 to 32 V... | |
| The A3M34SL039 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems,... | |
| The A3M34TL139 is a fully integrated Doherty power amplifier moduledesigned for wireless infrastructure applications that demand highperformance in the smallest footprint. Ideal for applications in massive MIMOsystems, outdoor small cells... | |
| The A3M35TL039 is a fully integrated Doherty power amplifier moduledesigned for wireless infrastructure applications that demand highperformance in the smallest footprint. Ideal for applications in massive MIMOsystems, outdoor small cells... | |
| The A3M36SL037 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems,... | |
| The A3M36SL039 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems,... | |
| The A3M37TL039 is a fully integrated Doherty power amplifier moduledesigned for wireless infrastructure applications that demand highperformance in the smallest footprint. Ideal for applications in massive MIMOsystems, outdoor small cells... | |
| The A3M38SL039 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems,... | |
| The A3M39SL039 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems,... | |
| The A3M40PD012 is a wideband low power amplifier module designed for cellular infrastructure applications. | |
| The A5M34TG140-TC is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems,... | |
| The A5M35TG140-TC is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems,... | |
| The A5M36TG140 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems,... | |
| The A5M36TG140-TC is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems,... | |
| The A5M37TG240 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems,... | |
| The A5M39TG140 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems,... | |
| The A70-1 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance an high reliability. This single stage bipolar transistor feedback amplifier design displays... | |
| The A70-2 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This single stage bipolar transistor feedback amplifier design displays... | |
| The A70-3 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This single stage bipolar transistor feedback amplifier design displays... | |
| The A72 RF amplifier is a discrete thin film hybrid design, which incorporates the use of thin film manufacturing processes for accurate performance and high reliability. This single stage bipolar... | |
| The A73 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for consistent performance and high reliability. This 2 stage bipolar transistor feedback amplifier design displays... | |
| The A74 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for consistent performance and high reliability. This 2 stage bipolar transistor feedback amplifier design displays... | |
| The A75 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This single stage bipolar transistor feedback amplifier design displays... | |
| The A76 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for consistent performance and high reliability. This 2 stage bipolar transistor feedback amplifier design displays... | |
| The A77 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. The single stage bipolar transistor feedback amplifier design displays... | |
| The A77-1 RF amplifier is a discrete hybrid design, which incorporates the use of thin film manufacturing processes for accurate performance and high reliability. The single stage silicon bipolar transistor... | |
| The A78 RF amplifier is a discrete thin film hybrid design, which incorporates the use of thin film manufacturing processes for accurate performance and high reliability. This single stage bipolar... | |
| The A79 RF amplifier is a discrete thin film hybrid design, which incorporates the use of thin film manufacturing processes for accurate performance and high reliability. This single stage bipolar... | |
| The A80 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. The 2 stage silicon bipolar feedback amplifier design displays... | |
| The A81 RF amplifier is a discrete hybrid ensign, which uses thin film manufacturing processes for accurate performance and high reliability. The 2 stage silicon bipolar feedback amplifier design displays... | |
| The A81-1 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. The 2 stage silicon bipolar feedback amplifier design displays... | |
| The A81-2 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. The 2 stage silicon bipolar feedback amplifier design displays... | |
| The A82 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. The 2 stage silicon bipolar feedback amplifier design displays... | |
| The A82-1 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. The 2 stage silicon bipolar feedback amplifier design displays... | |
| The A83-1 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for consistent performance and high reliability. This 2 stage bipolar transistor feedback amplifier design displays... | |
| The A87 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This single stage bipolar transistor feedback amplifier design displays... | |
| The A87-1 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This single stage bipolar transistor feedback amplifier design displays... | |
| The A87-2 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This single stage bipolar transistor feedback amplifier design displays... | |
| The A88 RF amplifier is a discrete thin film hybrid design, which incorporates the use of thin film manufacturing processes for accurate performance and high reliability. This single stage bipolar... | |
| The A89 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. The 2 stage silicon bipolar feedback amplifier design displays... | |
| The ACA1206 is a surface mount monolithic GaAs RF Linear Amplifier that has been developed to replace, in new designs, the standard CATV Hybrid amplifiers currently in use. The MMIC... | |
| The AD8331 is a single channel, ultralow noise, linear-in-dB, variable gain amplifier (VGA). Optimized for ultrasound systems, it is usable as a low noise variable gain element at frequencies up... | |
| The ADA10000 is a monolithic IC intended for use in applications requiring high linearity, such as Cellular Telephone Base Station Driver Amplifiers, CATV Fiber Receiver and Distribution Amplifiers, and CATV... | |
| The ADL5240 is a high performance, digitallycontrolled variable gain amplifier (VGA) operating from 100 MHz to 4000 MHz.The VGA integrates a high performance, 20 dB gain, internally matched amplifier(AMP) with... | |
| The ADL5320 is a broadband, linear driver RF amplifier that operates at frequencies from 400 MHz to 2700 MHz. The device can be used in a wide variety of wired... | |
| The ADL5321 incorporates a dynamically adjustable biasing circuit that allows for the customization of OIP3 and P1dB performance from 3.3 V to 5 V without the need for an external... | |
| The ADL5324 incorporates a dynamically adjustable biasing circuit that allows for the customization of OIP3 and P1dB performance from 3.3 V to 5 V, without the need for an external... | |
| The ADL5536 is a 20 dB linear amplifier that operates at frequencies up to 1 GHz. The device can be used in a wide variety of cellular, CATV, military, and... | |
| The ADL5541 is a broadband 15 dB linear amplifier that operates at frequencies up to 6 GHz. The device can be used in a wide variety of CATV, cellular, and... | |
| The ADL6317 is a transmit variable gain amplifier (VGA) that provides an interface from radio frequency digital-to-analog converters (RF DACs), transceivers, and systems on a chip (SoC) to power amplifiers. | |
| The ADL6337 belongs to a family of transmit variable gain amplifiers (VGAs). It provides an interface from RF digital-to-analog converters (DACs), transceivers, and systems on a chip (SoC) to power... | |
| The ADL7003 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), balanced low noise amplifier that operates from 50 GHz to 95 GHz. | |
| The ADL8104 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise, wideband, high linearity amplifier that operates from 0.4 GHz to... | |
| The ADL8106 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), wideband low noise amplifier that operates from 18 GHz to 54 GHz. | |
| The ADL9005 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), wideband, LNA that operates from 0.01 to 26.5 GHz. The ADL9005 provides... | |
| The ADL9006 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), low noise amplifier that operates between 2 GHz and 28 GHz. The... | |
| The ADL9006CHIPS is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), low noise amplifier that operates from 2 GHz to 28 GHz. The... | |
| The ADPA1107 is a gallium nitride (GaN), broadband power amplifier, delivering 45.0 dBm (35 W) with 56.5% typical power added efficiency (PAE) across a bandwidth of 4.8 GHz to 6.0... | |
| The ADPA7001CHIPS is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), balanced medium power amplifier, with an integrated temperature compensated on-chip power detector... | |
| The ADPA7002CHIP is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), distributed power amplifier that operates from 20 GHz to 44 GHz. The... | |
| The ADPA7004CHIPS is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), balanced medium power amplifier, with an integrated temperature compensated on-chip power detector... | |
| The ADPA7005CHIP is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from 20 GHz to 44 GHz. The... | |
| The ADPA7006CHIP is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from 18 GHz to 44 GHz. The... | |
| The ADPA7007 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), 31.5 dBm saturated output power power amplifier, with an integrated temperature compensated,... | |
| The ADPA7007CHIP is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from 18 GHz to 44 GHz. The... | |
| The ADPA7008 is a gallium arsenide (GaAs), pseudomorphic highelectron mobility transistor (pHEMT), monolithic microwave integratedcircuit (MMIC), 31 dBm saturated output power (PSAT, 1 W)distributed power amplifier with an integrated temperature... | |
| The ADPA9002 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), power amplifier that operates between dc and 10 GHz. The amplifier provides... | |
| The AFIC901N is a 2-stage, high gain amplifier designed to provide a high level of flexibility to the amplifier designer. The device is unmatched even at the interstage, allowing performance... | |
| The AFLP5G25641 is an integrated multi-chip module. It consists of three stages of amplification and support circuitry to work at 3.3 V or 5 V with very low power consumption. | |
| The AFLP5G35645 is an integrated multi-chip module. It consists of three stages of amplification and support circuitry to work at 3.3 V or 5 V with very low power consumption. | |
| The AFSC5G23E37 is a fully integrated Doherty power amplifier moduledesigned for wireless infrastructure applications that demand highperformance in the smallest footprint. Ideal for applications in massive MIMOsystems, outdoor small cells... | |
| The AFSC5G23E39 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems,... | |
| The AFSC5G26E38 is a fully integrated Doherty power amplifier moduledesigned for wireless infrastructure applications that demand highperformance in the smallest footprint. Ideal for applications in massive MIMOsystems, outdoor small cells... | |
| The AFSC5G26F38 is a fully integrated Doherty power amplifier moduledesigned for wireless infrastructure applications that demand highperformance in the smallest footprint. Ideal for applications in massive MIMOsystems, outdoor small cells... | |
| The AFSC5G35D37 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems,... | |
| The AFSC5G35E38 is a fully integrated Doherty power amplifier moduledesigned for wireless infrastructure applications that demand highperformance in the smallest footprint. Ideal for applications in massive MIMOsystems, outdoor small cells... | |
| The AFSC5G37D37 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems,... | |
| The AFSC5G37E38 is a fully integrated Doherty power amplifier moduledesigned for wireless infrastructure applications that demand highperformance in the smallest footprint. Ideal for applications in massive MIMOsystems, outdoor small cells... | |
| The AG102 is a general-purpose gain block that offers good dynamic range and low noise figure in a low-cost surface-mount package. The combination of near-constant OIP3 and low noise figure... | |
| The AL7 limiting amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This design uses a Schottky diode limiter circuit at... | |
| The AM-151 amplifier uses a coupler feedback design with high intercept and compression points. The use of coupler feedback minimize noise figure and DC current in a high intercept amplifier. | |
| The avionics AFIC10275GN is a 2-stage RFIC designed for transponder applications operating from 978 to 1090 MHz. This device is suitable for use in pulse applications, including Mode S transponders... | |
| The avionics AFIC10275N is a 2-stage RFIC designed for transponder applications operating from 978 to 1090 MHz. This device is suitable for use in pulse applications, including Mode S transponders... | |
| The AWL6153 WLAN Power Amplifier is an easy to use module that delivers high levels of linearity and efficiency for high data rate applications. Designed for the 2.4 GHz WLAN... | |
| The BGA6130 is a one-stage silicon MMIC amplifier, offered in a low-cost leadless surface-mount package. At 3.6 V it delivers 29.5 dBm output power at 3 dB gain compression with... | |
| The BTS6201U is a wideband, high linearity, pre-driver amplifier for 5G massive MIMO infrastructure applications, with fast on-off switching to support TDD systems. The amplifier is designed to operate between... | |
| The BTS6302U is a wideband, high linearity, pre-driver amplifier for 5G massive MIMO infrastructure applications, with fast on-off switching to support TDD systems. The amplifier is designed to operate between... | |
| The CGB7003-SC is a Darlington Configured, high dynamic range, utility gain block amplifier. Designed for applications operating within the DC to 6.0 GHz frequency range, Mimix’s broadband, cascadable, gain block... | |
| The CGB7006-SC is a Darlington Configured, high dynamic range, utility gain block amplifier. Designed for applications operating within the DC to 6.0 GHz frequency range, Mimix's broadband, cascadable, gain block... | |
| The CGB7011-SC (-BD) is a Darlington Configured, high dynamic range, utility gain block amplifier. Designed for applications operating within the DC to 6.0 GHz frequency range, Mimix’s broadband, cascadable, gain... | |
| The CGB7016-SC is a Darlington Configured, high dynamic range, utility gain block amplifier. Designed for applications operating within the DC to 6.0 GHz frequency range, Mimix's broadband, cascadable, gain block... | |
| The CGB7389-SC is a single stage, high power, high dynamic range, utility gain block amplifier. Designed for applications operating within the 2.1 to 2.5 GHz frequency range, Mimix's broadband, cascadable,... | |
| The CHA1077A is a W-band monolithic 3-stages low noise amplifier. All the active devices are internally self-biased. This chip is compatible with automatic equipment for assembly. The circuit is manufactured... | |
| The CHA1252-QDG is a three-stage Low Noise Amplifier operating in the 11 - 18GHz frequency band. This LNA typically presents low Noise Figure of 1.3dB associated to a small signal... | |
| The CHA1351-QAG is a three-stage Low Noise Amplifier operating in the 24 - 32GHz frequency band. This LNA typically presents low Noise Figure of 1.3dB associated to a small signal... | |
| The CHA2063A is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a PM-HEMT process : 0.25µm gate length, via holes through the substrate, air bridges... | |
| The CHA2066 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air... | |
| The CHA2066-QAG is a two-stage wide band monolithic low noise amplifier. Typical applications range from telecommunication (point to point, point to multi-point, VSAT) to ISM and military markets. The circuit... | |
| The CHA2092 is a high gain broadband three-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of... | |
| The CHA2094 is a three-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a... | |
| The CHA2097A is a variable gain broadband three stage monolithic amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the... | |
| The CHA2110-98F is a monolithic two-stage wide band low noise amplifier circuit. It is self-biased. It is designed for military, space and telecommunication systems. The circuit is manufactured with a... | |
| The CHA2110-QDG is a monolithic two-stage wide band, self-biased low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is... | |
| The CHA2157 is a two stages low noise and medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of... | |
| The CHA2159 is a four - stage low noise and medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside... | |
| The CHA2266 is a self biased, low-noise high gain driver amplifier. It is designed mainly for VSAT applications in Ku-band. The backside of the chip is both RF and DC... | |
| The CHA2292 is a high gain four-stage monolithic low noise amplifier with variable gain. It is designed for a wide range of applications, from military to commercial communication systems. The... | |
| The CHA2352-98F is a three stage monolithic Low Noise Amplifier, which produces 21dB linear gain with 20dB Adjustable Gain Control (AGC) and 3.5dB Noise Figure in the frequency band 46-52GHz. | |
| The CHA2362-98F is a wide band monolithic Low Noise monolithic Amplifier which integrates three amplification stages that produces 22dB gain associated with 2dB noise figure. It is designed for a... | |
| The CHA2368-98F is a four stage monolithic Low Noise Amplifier, which exhibits 21dB linear gain and 3.5dB Noise Figure in the frequency band 50-71GHz. It includes ESD protections on each... | |
| The CHA2391 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air... | |
| The CHA2394 is a three-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a... | |
| The CHA2411-QDG is a K band low noise amplifier providing 26 dB gain from a single bias supply +5V with a noise figure of 2.5 dB. All the active devices... | |
| The CHA2441-QAG is a K-band low noise amplifier providing 25.5dB gain from a single bias supply +3.3V with a noise figure of 2.5dB. All the devices are self biased on... | |
| The CHA2494-98F is a wide band monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with... | |
| The CHA2595-QDG is a wide band monolithic Low Noise Amplifier with State of the art wide band, low noise, adjustable gain performance. It is designed for a wide range of... | |
| The CHA3023 is a traveling wave amplifier using cascade FET. It is designed for a wide range of applications. The circuit is manufactured with a pHEMT process of 0.25µm gate... | |
| The CHA3063 is a two-stage general purpose monolithic medium power amplifier. The backside of the chip is both RF and DC grounded. This helps to simplify the assembly process. The... | |
| The CHA3080-98F is a three-stage monolithic medium power amplifier. This circuit includes a power detector which integrates a directional coupler, a detection diode and a reference diode to be used... | |
| The CHA3092 is a high gain broadband four-stage monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of... | |
| The CHA3395-QDG is a 3 stage monolithic medium power amplifier, which produces 24dB gain fo 20dBm output power. It is designed for a wide range of applications, from military to... | |
| The CHA3396-QDG is a 3 stage monolithic medium power amplifier, which produces 22dB gain for 19dBm output power. It is designed for a wide range of applications, from military to... | |
| The CHA3398-98F is a 4 stage monolithic Medium Power Amplifier, which produces 24dB gain for 20dBm output power. It is well suited for a wide range of application from military... | |
| The CHA3512 is composed by a Single Pole Double Through (SPDT) switch followed by a one step digital attenuator and a double stage traveling wave amplifier. It is designed for... | |
| The CHA3513 is composed by a three steps digital attenuator followed by a three stage traveling amplifier and a Single Pole Single Through (SPST) switch. It is designed for defense... | |
| The CHA3514 is composed by a two stage traveling wave amplifier followed by a four steps digital attenuator. It is designed for defense applications. The backside of the chip is... | |
| The CHA3565-QAG is a two-stage general purpose monolithic medium power amplifier. It is designed for a wide range of application, from military to commercial communication systems. | |
| The CHA3664-QAG is a two-stage self-biased general purpose monolithic medium power amplifier. The circuit is manufactured with a power p-HEMT process: 0.25µm gate length, via holes through the substrate, air... | |
| The CHA3665-QAG is a two-stage general purpose monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured... | |
| The CHA3666 is a two-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate,... | |
| The circuit is a three-stage self biased wide band monolithic low noise amplifier, designed for 36GHz to 44GHz point to point and point to multipoint communication. The circuit is manufactured... | |
| The circuit is a three-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the... | |
| TheADL5243 is a high performance, digitally controlled variable gain amplifieroperating from 100 MHz to 4000 MHz. The VGA integrates two high performance amplifiers and adigital step attenuator (DSA). Amplifier 1... | |
| UMS is developing an E-Band (71 to 86 GHz) Low Noise Amplifier with variable gain. This amplifier integrates four stages with 3.5dB Noise Figure associated with 22dB Gain and +10dBm... |
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