Richardson RFPD Datasheets for RF Amplifiers
RF amplifiers are devices that accept a varying input signal and produce an output signal that varies in the same way, but with larger amplitude.
RF Amplifiers: Learn more
| Product Name | Notes |
|---|---|
| 0.5-20GHz Driver GaAs Monolithic Microwave IC. The CHA4220-98F is a distributed driver amplifier which operates between 0.5 and 20GHz. It is designed for a wide range of applications such as... | |
| 10-16GHz Medium Power Amplifier GaAs Monolithic Microwave IC. The CHA5266-99F is a three stage monolithic GaAs Medium Power Amplifier that produces 23dB linear gain and 36dBm OIP3. It is designed... | |
| 15W X Band High Power Amplifier. The CHA8610-99F is a two stage High Power Amplifier operating between 8.5 and 11 GHz and providing typically 15W of saturated output power and... | |
| 17-24GHz Medium Power Amplifier. The CHA4253aQQG is a four stage monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The... | |
| 18-30GHz Low Noise Amplifier. GaAs Monolithic Microwave IC in SMD leadless package. The CHA2069-QDG is a three-stage self-biased wide band monolithic low noise amplifier. Typical applications range from telecommunication (point... | |
| 2-18 GHZ Low Noise Amplifier. GaAs Monolithic Microwave IC. UMS develops a 2-18GHz wide band low noise amplifier. The wide frequency band associated to a 2dB low noise figure makes... | |
| 2-22 GHz LNA with AGC. The CHA3024-99F is a distributed Low Noise Amplifier with Adjustable Gain Control (AGC) which operates between 2 and 22 GHz. It is designed for a... | |
| 2-22 GHz LNA with AGC. The CHA3024-QGG is a distributed Low Noise Amplifier with Adjustable Gain Control (AGC) that operates between 2 and 22 GHz. It is designed for a... | |
| 2-8 GHz High Power Amplifier GaAs Monolithic Microwave IC. The CHA6015-99F is a HPA that provides typically 37.5 dBm output power on the frequency band 2-8 GHz. The circuit is... | |
| 20-25GHz Low Noise Amplifier; GaAs Monolithic Microwave IC in SMD leadless package. The CHA2411-QDG is a K-band low noise amplifier providing 26 dB gain from a single bias supply +5V... | |
| 21.2-23.6 GHz Power Amplifier. The CHA6356-QXG is a three stage monolithic GaAs high power circuit producing 2 Watt output power. It integrates a power detector and allows gain control. ESD... | |
| 5.8-17 GHz Low Noise Amplifier. GaAs Monolithic Microwave IC in SMD leadless package. The CHA3656-QAG is a two-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with... | |
| 6-18GHz Amplifier; GaAs Monolithic Microwave IC. The CHA3511 is composed of a Single Pole Single Through (SPST) switch followed by a double stage traveling wave amplifier. It is designed for... | |
| 7-11 GHz Low Noise Amplifier GaAs Monolithic Microwave IC. The CHA1010-99F is a monolithic two-stage wide-band low noise amplifier. It is designed for a wide range of applications, from professional... | |
| 8-12 GHz High Power Amplifier GaAs Monolithic Microwave IC. The CHA6005-QEG is a high power amplifier monolithic circuit, which integrates two stages and produces 31.5dBm output power associated to a... | |
| 8-12GHz Driver Amplifier. The CHA6105 is a monolithic three-stage medium power amplifier designed for X-band applications. The driver provides typically 31.5dBm output power at saturation and is suitable for systems... | |
| 8-12GHz High Power Amplifier | |
| 80-105 GHz Balanced Low Noise Amplifier. GaAs Monolithic Microwave IC. UMS develops a balanced, four-stage, low noise monolithic amplifier which operates between 80 and 105GHz. This broadband amplifier delivers 16dB... | |
| ALM-1222 is a very low noise, high linearity balanced amplifier module operating in the 1.8 to 2.2GHz frequency range. The exceptional noise and linearity performances are achieved through the use... | |
| AM-119 is a coupler feedback amplifier with high intercept and compression points. The use of coupler feedback minimizes noise figure and current in a high intercept amplifier. This amplifier is... | |
| AM-123 is a coupler feedback amplifier with high intercept and compression points. The use of coupler feedback minimizes noise figure and current in a high intercept amplifier. This amplifier is... | |
| AM-145 is a coupler feedback amplifier with high intercept and compression points. The use of coupler feedback minimizes noise figure and current in a high intercept amplifier. This amplifier is... | |
| AM-146 is a coupler feedback amplifier with high intercept and compression points. The use of coupler feedback minimizes current in a high intercept amplifier. This amplifier is packaged in a... | |
| C Band High Power Amplifier GaAs Monolithic Microwave IC. CHA8012-99F is a monolithic two-stage GaAs High Power Amplifier (HPA) designed for C band applications. The HPA provides typically 12W of... | |
| C-Band Medium Power Amplifier; GaAs Monolithic Microwave IC. CHA4107 is a monolithic 5-6GHz band Medium Power Amplifier for space, defence and ISM applications. This is a two-stage GaAs pHEMT amplifier... | |
| GaAs Monolithic Microwave IC in SMD leadless package. The CHA3664-QAG is a two-stage self-biased general purpose monolithic medium power amplifier. The circuit is manufactured with a power pHEMT process: 0.25µm... | |
| GRF2011 is a broadband gain block with low noise figure and industry leading linearity designed for small cell, wireless infrastructure and other high performance applications. It exhibits outstanding broadband NF,... | |
| GRF2083 is a broadband, linear, ultra-low noise amplifier designed for small cell, wireless infrastructure and other high performance RF applications requiring ultra-low NF, high gain and linearity. The device features... | |
| GRF2093-W offers industry leading NF and gain performance and can be tuned over a wide range of frequencies from roughly 1.0 to 6.0 GHz. GRF2093-W is part of Guerrilla RF’s... | |
| Guerrilla RF offers a new AEC-Q100 Class 2 qualified broadband linear gain block with low noise figure and industry-leading linearity. The GRF2012-W is operated from a supply voltage of 2.7... | |
| MACOM’s AM42-0046 is a three stage MMIC power amplifier in a lead-free, bolt down ceramic package, allowing easy assembly. The AM42- 0046 employs a fully matched chip with internally decoupled... | |
| MACOM's AM-131 is a coupler feedback amplifier with high intercept and compression points. The use of coupler feedback minimizes noise figure and current in a high intercept amplifier. This amplifier... | |
| MACOM's AM-143 is a coupler feedback amplifier with low noise figure and high intercept points for the low bias current. The use of coupler feedback minimizes noise figure and current... | |
| MACOM's AM-147 is a coupler feedback amplifier with high intercept and compression points. The use of coupler feedback minimizes noise figure and current in a high intercept amplifier. This amplifier... | |
| MACOM's AM-153 is a coupler feedback amplifier with low noise figure. The use of coupler feedback minimizes noise figure and current in a high intercept amplifier. This amplifier is packaged... | |
| MACOM's AM-155 is a coupler feedback amplifier with high intercept and compression points. The use of coupler feedback minimizes noise figure and current in a high intercept amplifier. This amplifier... | |
| MACOM's AM-160 is a coupler feedback amplifier with high intercept and compression points. The use of coupler feedback minimizes noise figure and current in a high intercept amplifier. This amplifier... | |
| MACOM's AM-162 is a coupler feedback amplifier with high intercept and compression points. The use of coupler feedback minimizes noise figure and current in a high intercept amplifier. This amplifier... | |
| MACOM's AM-176 is a feedback amplifier with high intercept and compression points. This amplifier is packaged in a TO-8 package. Due to the internal power dissipation the thermal rise should... | |
| MACOM's AM-182 is a high gain feedback amplifier with high intercept and compression points. This amplifier is packaged in a TO-8 package. Due to the internal power dissipation the thermal... | |
| MACOM's AM-183 is a feedback amplifier with high intercept and compression points. This amplifier is packaged in a TO-8 package. Due to the internal power dissipation the thermal rise should... | |
| MACOM's AM-184 is a feedback amplifier with high intercept and compression points. This amplifier is packaged in a TO-8 package. Due to the internal power dissipation the thermal rise should... | |
| Microwave amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This single stage PHEMT feedback amplifier design displays impressive performance characteristics... | |
| Microwave amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This two stage GaAs FET feedback amplifier design displays impressive performance... | |
| RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. The 2 stage silicon bipolar feedback amplifier design displays impressive performance... | |
| RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This 2 stage bipolar transistor feedback amplifier design displays impressive performance... | |
| RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This feedback amplifier design uses 2 GaAs FET transistors In parallel,... | |
| RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This push-pull cascade design offers the benefits of low noise figure... | |
| RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This single stage bipolar transistor feedback amplifier design displays impressive performance... | |
| RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This single stage GaAs FET feedback amplifier design displays impressive performance... | |
| RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for consistent performance and high reliability. This 2 stage bipolar transistor feedback amplifier design displays impressive performance... | |
| RF amplifier is a discrete thin film hybrid design, which incorporates the use of thin film manufacturing processes for accurate performance and high reliability. This single stage bipolar transistor feedback... | |
| Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the... | |
| Second generation mMIMO Power Amplifier Module (PAM) with increased power and efficiency over previous generations. The compact, surface mount device is footprint compatible with the other PAM's, enabling the designer... | |
| The A18-1 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This single stage GaAs FET feedback amplifier design displays... | |
| The A2I09VD030N wideband integrated circuit is designed with on-chip matching that makes it usable from 575 to 960 MHz. This multi-stage structure is rated for 48 to 55 V operation... | |
| The A2I09VD050N wideband integrated circuit is designed with on-chip matching that makes it usable from 575 to 960 MHz. This multi-stage structure is rated for 48 to 55 V operation... | |
| The A2I20D020N wideband integrated circuit is designed with on-chip matching that makes it usable from 1400 to 2200 MHz. This multi-stage structure is rated for 20 to 32 V operation... | |
| The A2I20D040N wideband integrated circuit is designed with on-chip matching that makes it usable from 1400 to 2200 MHz. This multi-stage structure is rated for 20 to 32 V operation... | |
| The A2I20H060N wideband integrated circuit is an asymmetrical Doherty designed with on-chip matching that makes it usable from 1800 to 2200 MHz. This multi-stage structure is rated for 26 to... | |
| The A2I35H060N wideband integrated circuit is an asymmetrical Doherty designed with on-chip matching that makes it usable from 3400 to 3800 MHz. This multi-stage structure is rated for 26 to... | |
| The A3I20X050GN integrated Doherty circuit is designed with on-chip matching that makes it usable from 1800 to 2200 MHz. This multi-stage structure is rated for 20 to 32 V operation... | |
| The A3I20X050N integrated Doherty circuit is designed with on-chip matching that makes it usable from 1800 to 2200 MHz. This multi-stage structure is rated for 20 to 32 V operation... | |
| The A3I25D080N integrated Doherty circuit is designed with on chip matching that makes it usable from 2300 to 2690 MHz. This multi-stage structure is rated for 20 to 32 V... | |
| The A3M35TL039 is a fully integrated Doherty power amplifier moduledesigned for wireless infrastructure applications that demand highperformance in the smallest footprint. Ideal for applications in massive MIMOsystems, outdoor small cells... | |
| The A3M36SL039 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems,... | |
| The A3M37TL039 is a fully integrated Doherty power amplifier moduledesigned for wireless infrastructure applications that demand highperformance in the smallest footprint. Ideal for applications in massive MIMOsystems, outdoor small cells... | |
| The A3M39SL039 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems,... | |
| The A3M40PD012 is a wideband low power amplifier module designed for cellular infrastructure applications. | |
| The A5M37TG240 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems,... | |
| The A5M39TG140 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems,... | |
| The A70-1 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance an high reliability. This single stage bipolar transistor feedback amplifier design displays... | |
| The A70-2 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This single stage bipolar transistor feedback amplifier design displays... | |
| The A70-3 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This single stage bipolar transistor feedback amplifier design displays... | |
| The A72 RF amplifier is a discrete thin film hybrid design, which incorporates the use of thin film manufacturing processes for accurate performance and high reliability. This single stage bipolar... | |
| The A73 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for consistent performance and high reliability. This 2 stage bipolar transistor feedback amplifier design displays... | |
| The A74 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for consistent performance and high reliability. This 2 stage bipolar transistor feedback amplifier design displays... | |
| The A75 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This single stage bipolar transistor feedback amplifier design displays... | |
| The A76 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for consistent performance and high reliability. This 2 stage bipolar transistor feedback amplifier design displays... | |
| The A77 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. The single stage bipolar transistor feedback amplifier design displays... | |
| The A77-1 RF amplifier is a discrete hybrid design, which incorporates the use of thin film manufacturing processes for accurate performance and high reliability. The single stage silicon bipolar transistor... | |
| The A78 RF amplifier is a discrete thin film hybrid design, which incorporates the use of thin film manufacturing processes for accurate performance and high reliability. This single stage bipolar... | |
| The A79 RF amplifier is a discrete thin film hybrid design, which incorporates the use of thin film manufacturing processes for accurate performance and high reliability. This single stage bipolar... | |
| The A80 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. The 2 stage silicon bipolar feedback amplifier design displays... | |
| The A81 RF amplifier is a discrete hybrid ensign, which uses thin film manufacturing processes for accurate performance and high reliability. The 2 stage silicon bipolar feedback amplifier design displays... | |
| The A81-1 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. The 2 stage silicon bipolar feedback amplifier design displays... | |
| The A81-2 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. The 2 stage silicon bipolar feedback amplifier design displays... | |
| The A82 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. The 2 stage silicon bipolar feedback amplifier design displays... | |
| The A82-1 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. The 2 stage silicon bipolar feedback amplifier design displays... | |
| The A83-1 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for consistent performance and high reliability. This 2 stage bipolar transistor feedback amplifier design displays... | |
| The A87 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This single stage bipolar transistor feedback amplifier design displays... | |
| The A87-1 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This single stage bipolar transistor feedback amplifier design displays... | |
| The A87-2 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This single stage bipolar transistor feedback amplifier design displays... | |
| The A88 RF amplifier is a discrete thin film hybrid design, which incorporates the use of thin film manufacturing processes for accurate performance and high reliability. This single stage bipolar... | |
| The A89 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. The 2 stage silicon bipolar feedback amplifier design displays... | |
| The AFIC901N is a 2-stage, high gain amplifier designed to provide a high level of flexibility to the amplifier designer. The device is unmatched even at the interstage, allowing performance... | |
| The AFLP5G25641 is an integrated multi-chip module. It consists of three stages of amplification and support circuitry to work at 3.3 V or 5 V with very low power consumption. | |
| The AFLP5G35645 is an integrated multi-chip module. It consists of three stages of amplification and support circuitry to work at 3.3 V or 5 V with very low power consumption. | |
| The AFSC5G26E38 is a fully integrated Doherty power amplifier moduledesigned for wireless infrastructure applications that demand highperformance in the smallest footprint. Ideal for applications in massive MIMOsystems, outdoor small cells... | |
| The AFSC5G26F38 is a fully integrated Doherty power amplifier moduledesigned for wireless infrastructure applications that demand highperformance in the smallest footprint. Ideal for applications in massive MIMOsystems, outdoor small cells... | |
| The AFSC5G35D37 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems,... | |
| The AFSC5G35E38 is a fully integrated Doherty power amplifier moduledesigned for wireless infrastructure applications that demand highperformance in the smallest footprint. Ideal for applications in massive MIMOsystems, outdoor small cells... | |
| The AFSC5G37D37 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems,... | |
| The AFSC5G37E38 is a fully integrated Doherty power amplifier moduledesigned for wireless infrastructure applications that demand highperformance in the smallest footprint. Ideal for applications in massive MIMOsystems, outdoor small cells... | |
| The AL7 limiting amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This design uses a Schottky diode limiter circuit at... | |
| The AM-151 amplifier uses a coupler feedback design with high intercept and compression points. The use of coupler feedback minimize noise figure and DC current in a high intercept amplifier. | |
| The avionics AFIC10275GN is a 2-stage RFIC designed for transponder applications operating from 978 to 1090 MHz. This device is suitable for use in pulse applications, including Mode S transponders... | |
| The avionics AFIC10275N is a 2-stage RFIC designed for transponder applications operating from 978 to 1090 MHz. This device is suitable for use in pulse applications, including Mode S transponders... | |
| The BGA6130 is a one-stage silicon MMIC amplifier, offered in a low-cost leadless surface-mount package. At 3.6 V it delivers 29.5 dBm output power at 3 dB gain compression with... | |
| The BTS6201U is a wideband, high linearity, pre-driver amplifier for 5G massive MIMO infrastructure applications, with fast on-off switching to support TDD systems. The amplifier is designed to operate between... | |
| The BTS6302U is a wideband, high linearity, pre-driver amplifier for 5G massive MIMO infrastructure applications, with fast on-off switching to support TDD systems. The amplifier is designed to operate between... | |
| The CGB7003-SC is a Darlington Configured, high dynamic range, utility gain block amplifier. Designed for applications operating within the DC to 6.0 GHz frequency range, Mimix’s broadband, cascadable, gain block... | |
| The CGB7006-SC is a Darlington Configured, high dynamic range, utility gain block amplifier. Designed for applications operating within the DC to 6.0 GHz frequency range, Mimix's broadband, cascadable, gain block... | |
| The CGB7011-SC (-BD) is a Darlington Configured, high dynamic range, utility gain block amplifier. Designed for applications operating within the DC to 6.0 GHz frequency range, Mimix’s broadband, cascadable, gain... | |
| The CGB7016-SC is a Darlington Configured, high dynamic range, utility gain block amplifier. Designed for applications operating within the DC to 6.0 GHz frequency range, Mimix's broadband, cascadable, gain block... | |
| The CGB7389-SC is a single stage, high power, high dynamic range, utility gain block amplifier. Designed for applications operating within the 2.1 to 2.5 GHz frequency range, Mimix's broadband, cascadable,... | |
| The CHA1077A is a W-band monolithic 3-stages low noise amplifier. All the active devices are internally self-biased. This chip is compatible with automatic equipment for assembly. The circuit is manufactured... | |
| The CHA1252-QDG is a three-stage Low Noise Amplifier operating in the 11 - 18GHz frequency band. This LNA typically presents low Noise Figure of 1.3dB associated to a small signal... | |
| The CHA1351-QAG is a three-stage Low Noise Amplifier operating in the 24 - 32GHz frequency band. This LNA typically presents low Noise Figure of 1.3dB associated to a small signal... | |
| The CHA2063A is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a PM-HEMT process : 0.25µm gate length, via holes through the substrate, air bridges... | |
| The CHA2066 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air... | |
| The CHA2066-QAG is a two-stage wide band monolithic low noise amplifier. Typical applications range from telecommunication (point to point, point to multi-point, VSAT) to ISM and military markets. The circuit... | |
| The CHA2098b is a high gain broadband three-stage monolithic buffer amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the... | |
| The CHA2110-98F is a monolithic two-stage wide band low noise amplifier circuit. It is self-biased. It is designed for military, space and telecommunication systems. The circuit is manufactured with a... | |
| The CHA2110-QDG is a monolithic two-stage wide band, self-biased low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is... | |
| The CHA2157 is a two stages low noise and medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of... | |
| The CHA2159 is a four - stage low noise and medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside... | |
| The CHA2266 is a self biased, low-noise high gain driver amplifier. It is designed mainly for VSAT applications in Ku-band. The backside of the chip is both RF and DC... | |
| The CHA2292 is a high gain four-stage monolithic low noise amplifier with variable gain. It is designed for a wide range of applications, from military to commercial communication systems. The... | |
| The CHA2352-98F is a three stage monolithic Low Noise Amplifier, which produces 21dB linear gain with 20dB Adjustable Gain Control (AGC) and 3.5dB Noise Figure in the frequency band 46-52GHz. | |
| The CHA2362-98F is a wide band monolithic Low Noise monolithic Amplifier which integrates three amplification stages that produces 22dB gain associated with 2dB noise figure. It is designed for a... | |
| The CHA2394 is a three-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a... | |
| The CHA2395 is a four-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a... | |
| The CHA2411-QDG is a K band low noise amplifier providing 26 dB gain from a single bias supply +5V with a noise figure of 2.5 dB. All the active devices... | |
| The CHA2441-QAG is a K-band low noise amplifier providing 25.5dB gain from a single bias supply +3.3V with a noise figure of 2.5dB. All the devices are self biased on... | |
| The CHA2494-98F is a wide band monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with... | |
| The CHA2595-QDG is a wide band monolithic Low Noise Amplifier with State of the art wide band, low noise, adjustable gain performance. It is designed for a wide range of... | |
| The CHA3023 is a traveling wave amplifier using cascade FET. It is designed for a wide range of applications. The circuit is manufactured with a pHEMT process of 0.25µm gate... | |
| The CHA3063 is a two-stage general purpose monolithic medium power amplifier. The backside of the chip is both RF and DC grounded. This helps to simplify the assembly process. The... | |
| The CHA3080-98F is a three-stage monolithic medium power amplifier. This circuit includes a power detector which integrates a directional coupler, a detection diode and a reference diode to be used... | |
| The CHA3092 is a high gain broadband four-stage monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of... | |
| The CHA3395-QDG is a 3 stage monolithic medium power amplifier, which produces 24dB gain fo 20dBm output power. It is designed for a wide range of applications, from military to... | |
| The CHA3396-QDG is a 3 stage monolithic medium power amplifier, which produces 22dB gain for 19dBm output power. It is designed for a wide range of applications, from military to... | |
| The CHA3398-98F is a 4 stage monolithic Medium Power Amplifier, which produces 24dB gain for 20dBm output power. It is well suited for a wide range of application from military... | |
| The CHA3512 is composed by a Single Pole Double Through (SPDT) switch followed by a one step digital attenuator and a double stage traveling wave amplifier. It is designed for... | |
| The CHA3513 is composed by a three steps digital attenuator followed by a three stage traveling amplifier and a Single Pole Single Through (SPST) switch. It is designed for defense... | |
| The CHA3514 is composed by a two stage traveling wave amplifier followed by a four steps digital attenuator. It is designed for defense applications. The backside of the chip is... | |
| The CHA3565-QAG is a two-stage general purpose monolithic medium power amplifier. It is designed for a wide range of application, from military to commercial communication systems. | |
| The CHA3664-QAG is a two-stage self-biased general purpose monolithic medium power amplifier. The circuit is manufactured with a power p-HEMT process: 0.25µm gate length, via holes through the substrate, air... | |
| The CHA3665-QAG is a two-stage general purpose monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured... | |
| The CHA3666 is a two-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate,... | |
| The CHA3666-QAG is a two-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air... | |
| The CHA3688aQDG is a three-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard P-HEMT process: 0.25µm gate length, via holes through the substrate, air... | |
| The CHA3689 is a three-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard P-HEMT process: 0.25µm gate length, via holes through the substrate,... | |
| The CHA3801-99F is an L-Band LNA monolithic circuit including an active bias network. Furthermore a protection network is included in order to allow high input power survivability The circuit is... | |
| The CHA3801-FAA is a L-Band LNA monolithic circuit including an active bias network. In addition, a protection network is included to allow high input power survivability. It is designed for... | |
| The CHA3801-QDG is an L-Band LNA monolithic circuit including an active bias network. Furthermore a protection network is included in order to allow high input power survivability. It is designed... | |
| The CHA4102-QEG is a variable gain amplifier monolithic circuit, which integrates 6 bit digital attenuator and a 2 stage driver amplifier that produces 20dB gain, an output power of 23.5dBm... | |
| The CHA4105-99F is a monolithic two-state driver amplifier delivering 24dBM output power @ 1dB gain compression in the 2-4 GHz frequency range. It is designed for a wide range of... | |
| The CHA4105-QDG is a monolithic two-stage driver amplifier delivering 24dBm output power @ 1dB gain compression in the range 2-4GHz. It is designed for a wide range of applications, from... | |
| The CHA4107-QDG is a monolithic two-stage GaAs medium power amplifier designed for C-band applications. The MPA provides typically 25.5 dBm output power associated to 30% power added efficiency at 1dB... | |
| The CHA4252-QKB is a three-stage Medium Power Amplifier in the 17.2 to 21.3GHz frequency band. This MPA typically provides 25dBm output power associated to 30% of Power Added Efficiency. The... | |
| The CHA4262-QDG is a three-stage GaAs Medium Power Amplifier operating between 17GHz and 22GHz. This amplifier provides 23dBm saturated output power with 37% Power Added Efficiency and 20dBm Output Power... | |
| The CHA4314-98F is a two stage monolithic Medium Power Amplifier circuit. It is designed for a wide range of applications: Radar, electronic Warfare, PtP radios, Test & Measurement and General... | |
| The CHA4350-QDG is a three stage monolithic medium power amplifier circuit. It is well suited for a wide range of applications from defense to commercial communication systems. This circuit is... | |
| The CHA4395-QDG is a three-stage GaAs Medium Power Amplifier operating between 21GHz and 27GHz. This amplifier provides 23dBm maximum output power with 15% Power Added Efficiency and 21dBm Output Power... | |
| The CHA4396-QDG is a three-stage GaAs Medium Power Amplifier operating between 24 GHz and 30 GHz. This amplifier provides 22dBm maximum Output Power with 17% of Power Added Efficiency and... | |
| The CHA5266-QDG is a three stage monolithic GaAs medium power amplifier. It is designed for a wide range of applicaions, from professional to commercial communcation systems. | |
| The CHA5350-99F is a four stage monolithic MPA that typically provides an output power of 26.5dBm at 1dB gain compression associated to a high IP3 output of 34 dBm | |
| The CHA5618-99F is a monolithic GaN Driver Amplifier in the frequency band 6-18GHz with a control interface for speed switching. This driver provides 28dBm of Output Power. The circuit exhibits... | |
| The CHA5659-98F is a four stage monolithic GaAs High Power Amplifier producing 1.3 Watt output power. It is highly linear, with possible gain control and integrates a power detector. ESD... | |
| The CHA6094-QKB is a GaN packaged monolithic Power Amplifier operating in the 35-42.5 GHz frequency range. Typical saturated Output power is 33dBm and small signal gain is 26dB. It is... | |
| The CHA6095-QKB is a GaN packaged monolithic Power Amplifier operating in the 35-42.5 GHz frequency range. Typical saturated Output power is 36dBm and small signal gain is 25dB. It is... | |
| The CHA6194-QXG is a four stage monolithic GaAs high power circuit producing 1.2 Watt output power. It is highly linear with possible gain control and integrates a power detector. ESD... | |
| The CHA6262-99F is a three-stage GaN High Power Amplifier operating in the frequency band 17.3-21.5GHz. This HPA typically provides 4W output power associated to 36% of Power Added Efficiency. The... | |
| The CHA6282-QCB is a three-stage GaN High Power Amplifier in the frequency band 17.3-21.5GHz. This HPA typically provides 4W output power associated to 28% of Power Added Efficiency. The circuit... | |
| The CHA6357-98F is a bare die three-stage GaN Power Amplifier operating between 27GHz and 31GHz. This amplifier typically provides 5W of saturated Output Power associated to 23% and 24dB of... | |
| The CHA6362-QXG is a three stage monolithic GaAs high power circuit producing 2.5 Watt output power. It integrates a power detector and allows gain control. ESD protections are included. It... | |
| The CHA6518 is a monolithic three-stage GaAs high power amplifier designed for wide band applications. This device is manufactured using a UMS 0.25 µm Power pHEMT process, including, via holes... | |
| The CHA6653-98F is a four stages monolithic GaAs High Power Amplifier producing 1.8 Watt output power. It is highly linear, with gain control capability and integrates a power detector. ESD... | |
| The CHA6653-QXG is a four stage monolithic GaAs high power circuit producing 1.8 Watt output power. It is highly linear, with possible gain control and integrates a power detector. ESD... | |
| The CHA6682-98F is a three stage High Power Amplifier operating between 24 and 27.5GHz with integrated power detectors that provides 5W of saturated output power with 32% of Power Added... | |
| The CHA6682-98F is a three stage High Power Amplifier with integrated power detector and ESD protection. The CHA6682-98F operates between 24 and 27.5 GHz and provides 5W of saturated output... | |
| The CHA6710-99F is a two stage Medium Power Amplifier operating between 8 and 12.75GHz. It typically provides 5W of saturated output power and 36% of power added efficiency. It is... | |
| The CHA6710-FAB is a GaN based 5W X-Band (8 to 12.75GHz) Medium Power Amplifier in hermetic metal ceramic package and is intended for use in space applications. | |
| The CHA6735-QKB is a packaged monolithic High Power Amplifier exhibiting 4W output power and 22% of Power Added Efficiency over 27-31 GHz bandwidth. It is well suited for VSAT, SatCom... | |
| The CHA7060-QAB is a two stages monolithic GaN High Power Amplifier, reaching 12 Watt output power over 5.6-8.5GHz bandwidth. It offers high linearity performance with 30dB of Gain and an... | |
| The CHA7062-QCB is a two stages monolithic GaN on SiC Power Amplifier exhibiting 5W saturated output power over 13-20GHz frequency range. It features 17% power added efficiency and a linear... | |
| The CHA7215 is a monolithic three-stage GaAs high power amplifier designed for X band applications. The HPA provides typically 9W output power associated to 36% power added efficiency at 4dBc... | |
| The CHA7250-QAB is a two stage monolithic GaN on SiC Power Amplifier exhibiting 10W saturated output power over 10-12.75GHz frequency range. It features 37% Power Added Efficiency and a linear... | |
| The CHA7452-99F is a four stage High Power Amplifier operating between 35.5 and 40.5 GHz and providing typically 9W of saturated output power and 24 % of power added efficiency. | |
| The CHA7455-99F is a four-stage High Power Amplifier operating between 39.5 and 42.5 GHz and providing more than 8W of saturated output power and 24% of power added efficiency. The... | |
| The CHA7618-99F is a three-stage GaN High Power Amplifier in the frequency band 5.5-18GHz. This HPA typically provides 10W of Output Power associated to 20% of Power Added Efficiency. The... | |
| The CHA8054-99F is a two stage High Power Amplifier operating between 7.7 and 8.6GHz and typically providing 20W of saturated output power and 50% of Power Added Efficiency. It is... | |
| The CHA8100 chip is a monolithic two stage high power amplifier designed for X band applications. The HPA provides typically 11W output power, 40% power added efficiency and a high... | |
| The CHA8107-QCB is a two-stage GaN High Power Amplifier for the 4.5 – 6.8GHz frequency band. This HPA operates with a drain voltage from 14V to 24V. Depending on the... | |
| The CHA8212-99F is a three-stage GaN High Power Amplifier in the frequency band 8.5-11.5GHz. This HPA typically provides 25W of output power associated to 36% of Power Added Efficiency. The... | |
| The CHA8254-99F is a three-stage GaN Doherty Power Amplifier in the frequency band 17.3-20.3GHz. This DPA typically provides 10W of output power associated to 31% of Power Added Efficiency. Thanks... | |
| The CHA8262-99F is a three stage monolithic GaN High Power Amplifier reaching 12W Output Power over 27.5-31.5GHz bandwidth. It offers high linearity performances and reaches more than 25% of Power... | |
| The CHA8312-99F is a two-stage GaN High Power Amplifier in the frequency band 8-12GHz. This HPA typically provides 17W of output power associated to 50% of Power Added Efficiency. The... | |
| The CHA8352-99F is a two-stage GaN High Power Amplifier in the frequency band 10.7-12.75GHz. This HPA typically provides 20W of output power associated to 45% of Power Added Efficiency. The... | |
| The CHA8362-99F is a three stage High Power Amplifier operating between 26.5 and 31GHz and providing typically 25W of saturated output power associated to 30% of power added efficiency. The... | |
| The CHA8611-99F is a two stage High Power Amplifier operating between 8.5 and 11GHz and providing typically 18W of saturated output power and 43% of power added efficiency. The circuit... | |
| The CHA8612-QDB is a two stage High Power Amplifier operating between 7.9 and 11GHz and providing typically 18W of saturated output power and 40% of Power Added Efficiency. It is... | |
| The CHA8710-QDB is a two stage High Power Amplifier operating between 8.5 and 10.5GHz and providing typically 25W of saturated output power and 41% of power added efficiency. It is... | |
| The CHA8710a99F is a two stage High Power Amplifier operating between 8.5 and 10.5GHz and providing typically 25W of saturated output power and 44% of power added efficiency. The circuit... | |
| The circuit is a three-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the... | |
| The ERZ-LNA-0002-0600-27 -5.5 is a Low Noise Amplifier providing a gain of 27 dB with a noise figure of 5.5 dB. The compact size and modularity makes it ideal for... | |
| The ERZ-LNA-0100-4000-30 -5 is a Low Noise Amplifier providing a gain of 30 dB with a noise figure of 5 dB. The compact size and modularity makes it ideal for... | |
| The ERZ-LNA-0100-4000-45 -5 is a Low Noise Amplifier providing a gain of 45 dB with a noise figure of 5 dB. The compact size and modularity makes it ideal for... | |
| The ERZ-LNA-0200-1800-18 -4 is a Low Noise Amplifier providing a gain of 20 dB with a noise figure of 3 dB. The compact size and modularity makes it ideal for... | |
| The ERZ-LNA-0200-1800-30 -2 is a Low Noise Amplifier providing a gain of 30 dB with a noise figure of 2 dB. The compact size and modularity makes it ideal for... | |
| The ERZ-LNA-0200-5000-22 -6 is a Low Noise Amplifier providing a gain of 22 dB with a noise figure of 5 dB. The compact size and modularity makes it ideal for... | |
| The ERZ-LNA-0550-1800-40 -4 is a Low Noise Amplifier providing a gain of 40 dB with a noise figure of 4 dB. The compact size and modularity makes it ideal for... | |
| The ERZ-LNA-0600-1200-35 -3 is a Low Noise Amplifier providing a gain of 35 dB with a noise figure of 2 dB. The compact size and modularity makes it ideal for... | |
| The ERZ-LNA-1700-2400-25 -2.5 is a K Band Low Noise Amplifier providing a gain of 26 dB and a noise figure of 2.5 dB. The compact size and modularity makes it... | |
| The ERZ-LNA-1770-2200-40 -1.5 is a Low Noise Amplifier providing a gain of 39 dB with a noise figure of 1.3 dB. The compact size and modularity makes it ideal for... | |
| The ERZ-LNA-1800-4200-24 -6 is a Low Noise Amplifier providing a gain of 24 dB with a noise figure of 5 dB. The compact size and modularity makes it ideal for... | |
| The ERZ-LNA-2600-4000-30 -2.5 is a Ka Band Low Noise Amplifier providing a gain higher than 30 dB and a low noise figure of 2.5 dB. The compact size and modularity... | |
| The ERZ-LNA-2600-4000-50 -2.5 is a Low Noise Amplifier providing a gain of 50 dB with a noise figure of 2.5 dB. The compact size and modularity makes it ideal for... | |
| UMS is developing an E-Band (71 to 86 GHz) Low Noise Amplifier with variable gain. This amplifier integrates four stages with 3.5dB Noise Figure associated with 22dB Gain and +10dBm... | |
| X Band HBT Driver Amplifier. The CHA5014 chip is a monolithic two-stage medium power amplifier designed for X band applications. Moreover this amplifier is relevant for systems that require an... | |
| X-band High Power Amplifier, GaAs Monolithic Microwave IC. The CHA7115 is a monolithic three-stage GaAs high power amplifier designed for X-band applications. The HPA provides typically 8W output power associated... | |
| X-band Medium Power Amplifier. GaAs Monolithic IC. The CHA5115-QDG is a monolithic two-stage GaAs medium power amplifier designed for X-band applications. The MPA provides typically 28dBm output power associated to... | |
| X-band Medium Power Amplifier. The CHA5115-99F is a monolithic two-stage GaAs medium power amplifier designed for X-band applications. The MPA provides typically 29dBm output power associated to 39% power added... |
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