Richardson RFPD Datasheets for RF Amplifiers
RF amplifiers are devices that accept a varying input signal and produce an output signal that varies in the same way, but with larger amplitude.
RF Amplifiers: Learn more
| Product Name | Notes |
|---|---|
| 1 MHz to 2.7 GHz RF Gain Block | |
| 1.2 GHz Balanced Low Noise Linear Amplifier. The ABA3116 is a monolithic IC intended for use in applications requiring high linearity, such as Cellular Telephone Base Station Driver Amplifiers, CATV... | |
| 10 MHz to 3 GHz VGA with 60dB Gain Control Range | |
| 1800 MHz to 2700 MHz 1 W RF Driver Amplifier. The ADL5606 is a broadband, two-stage, 1 W RF driver amplifier that operates over a frequency range of 1800 MHz... | |
| 2.01 to 2.025 GHz Small-Cell Power Amplifier Module. The AWB7031 is a highly linear, fully matched, power amplifier module designed for picocell, femtocell, and customer premises equipment (CPE) applications. Its... | |
| 20 MHz to 1.0 GHz IF Gain Block. The ADL5535 is a 16 dB linear amplifier that operates at frequencies up to 1 GHz. The device can be used in... | |
| 20 MHz to 500 MHz Dual IF Amplifier. The ADL5534 contains two broadband, fixed-gain, linear amplifiers and operates at frequencies up to 500 MHz. The device can be used in... | |
| 20 MHz to 500 MHz IF Gain Block. The ADL5531 is a broadband, fixed-gain, linear amplifier that operates at frequencies up to 500 MHz. The device can be used in... | |
| 24V Infrastructure Reverse Amplifier. The ARA2032 is a high performance, low distortion, balanced designed for use in high frequency return path systems with a 24V supply. The device operates over... | |
| 400 MHz to 4000 MHz Low Noise Amplifier. The ADL5521 is a high performance GaAs pHEMT low noise amplifier. It provides high gain and low noise figure for single-downconversio n... | |
| 400 MHz to 4000 MHz Low Noise Amplifier. The ADL5523 is a high performance GaAs pHEMT low noise amplifier. It provides high gain and low noise figure for single-downconversio n... | |
| 50 MHz to 6 GHz RF/IF Gain Block, Gain of 15 dB | |
| 700 MHz to 1000 MHz 1 W RF Driver Amplifier. The ADL5605 is a broadband, two-stage, 1 W RF driver amplifier that operates over a frequency range of 700 MHz... | |
| 700 MHz to 2700 MHz 1 W RF Driver Amplifier. The ADL5604 is a very broadband RF driver amplifier that operates over the wide frequency range of 700 MHz to... | |
| 802.11a/n 5 GHz Power Amplifer. The ANADIGICS AWL5910N WLAN Power Amplifier is an easy to use module that delivers high levels of linearity and efficiency for high data rate applications. | |
| 802.11a/n/ac 5 GHz Power Amplifier. The ANADIGICS AWL5905 WLAN Power Amplifier is an easy to use module that delivers high levels of linearity and efficiency for high data rate applications. | |
| ADCA3950 is a power doubler hybrid module packaged in the industry-standard SOT-115J package. The device achieves a high RF output of 74 dBmV total composite power under 18 dB tilt... | |
| ALM-1222 is a very low noise, high linearity balanced amplifier module operating in the 1.8 to 2.2GHz frequency range. The exceptional noise and linearity performances are achieved through the use... | |
| AM-119 is a coupler feedback amplifier with high intercept and compression points. The use of coupler feedback minimizes noise figure and current in a high intercept amplifier. This amplifier is... | |
| AM-123 is a coupler feedback amplifier with high intercept and compression points. The use of coupler feedback minimizes noise figure and current in a high intercept amplifier. This amplifier is... | |
| AM-145 is a coupler feedback amplifier with high intercept and compression points. The use of coupler feedback minimizes noise figure and current in a high intercept amplifier. This amplifier is... | |
| AM-146 is a coupler feedback amplifier with high intercept and compression points. The use of coupler feedback minimizes current in a high intercept amplifier. This amplifier is packaged in a... | |
| Cascadable Amplifier, 10 to 1000 MHz. The A18-1 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This single stage... | |
| DC to 1000 MHz IF Gain Block. The ADL5530 is a broadband, fixed-gain, linear amplifier that operates at frequencies up to 1000 MHz. The device can be used in a... | |
| GSM/GPRS/EDGE Power Amplifier Module with Integrated Control. This quad band power amplifier module supports dual, tri and quad band applications for both GMSK and 8-PSK modulation schemes. There are two... | |
| HELP3TM Dual-band Cellular/PCS UMTS 3.4 V HSPA Linear Power Amplifier Module. The AWT6221R addresses the demand for increased integration in dual-band handsets for North American UMTS network deployments. The... | |
| MACOM’s AM42-0046 is a three stage MMIC power amplifier in a lead-free, bolt down ceramic package, allowing easy assembly. The AM42- 0046 employs a fully matched chip with internally decoupled... | |
| MACOM's AM-131 is a coupler feedback amplifier with high intercept and compression points. The use of coupler feedback minimizes noise figure and current in a high intercept amplifier. This amplifier... | |
| MACOM's AM-143 is a coupler feedback amplifier with low noise figure and high intercept points for the low bias current. The use of coupler feedback minimizes noise figure and current... | |
| MACOM's AM-147 is a coupler feedback amplifier with high intercept and compression points. The use of coupler feedback minimizes noise figure and current in a high intercept amplifier. This amplifier... | |
| MACOM's AM-153 is a coupler feedback amplifier with low noise figure. The use of coupler feedback minimizes noise figure and current in a high intercept amplifier. This amplifier is packaged... | |
| MACOM's AM-155 is a coupler feedback amplifier with high intercept and compression points. The use of coupler feedback minimizes noise figure and current in a high intercept amplifier. This amplifier... | |
| MACOM's AM-160 is a coupler feedback amplifier with high intercept and compression points. The use of coupler feedback minimizes noise figure and current in a high intercept amplifier. This amplifier... | |
| MACOM's AM-162 is a coupler feedback amplifier with high intercept and compression points. The use of coupler feedback minimizes noise figure and current in a high intercept amplifier. This amplifier... | |
| MACOM's AM-176 is a feedback amplifier with high intercept and compression points. This amplifier is packaged in a TO-8 package. Due to the internal power dissipation the thermal rise should... | |
| MACOM's AM-182 is a high gain feedback amplifier with high intercept and compression points. This amplifier is packaged in a TO-8 package. Due to the internal power dissipation the thermal... | |
| MACOM's AM-183 is a feedback amplifier with high intercept and compression points. This amplifier is packaged in a TO-8 package. Due to the internal power dissipation the thermal rise should... | |
| MACOM's AM-184 is a feedback amplifier with high intercept and compression points. This amplifier is packaged in a TO-8 package. Due to the internal power dissipation the thermal rise should... | |
| Microwave amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This single stage PHEMT feedback amplifier design displays impressive performance characteristics... | |
| Microwave amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This two stage GaAs FET feedback amplifier design displays impressive performance... | |
| RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. The 2 stage silicon bipolar feedback amplifier design displays impressive performance... | |
| RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This 2 stage bipolar transistor feedback amplifier design displays impressive performance... | |
| RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This feedback amplifier design uses 2 GaAs FET transistors In parallel,... | |
| RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This push-pull cascade design offers the benefits of low noise figure... | |
| RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This single stage bipolar transistor feedback amplifier design displays impressive performance... | |
| RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This single stage GaAs FET feedback amplifier design displays impressive performance... | |
| RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for consistent performance and high reliability. This 2 stage bipolar transistor feedback amplifier design displays impressive performance... | |
| RF amplifier is a discrete thin film hybrid design, which incorporates the use of thin film manufacturing processes for accurate performance and high reliability. This single stage bipolar transistor feedback... | |
| Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the... | |
| Second generation mMIMO Power Amplifier Module (PAM) with increased power and efficiency over previous generations. The compact, surface mount device is footprint compatible with the other PAM's, enabling the designer... | |
| The A18-1 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This single stage GaAs FET feedback amplifier design displays... | |
| The A2I09VD030N wideband integrated circuit is designed with on-chip matching that makes it usable from 575 to 960 MHz. This multi-stage structure is rated for 48 to 55 V operation... | |
| The A2I09VD050N wideband integrated circuit is designed with on-chip matching that makes it usable from 575 to 960 MHz. This multi-stage structure is rated for 48 to 55 V operation... | |
| The A2I20D020N wideband integrated circuit is designed with on-chip matching that makes it usable from 1400 to 2200 MHz. This multi-stage structure is rated for 20 to 32 V operation... | |
| The A2I20D040N wideband integrated circuit is designed with on-chip matching that makes it usable from 1400 to 2200 MHz. This multi-stage structure is rated for 20 to 32 V operation... | |
| The A2I20H060N wideband integrated circuit is an asymmetrical Doherty designed with on-chip matching that makes it usable from 1800 to 2200 MHz. This multi-stage structure is rated for 26 to... | |
| The A2I25D012N wideband integrated power amplifier is optimized to function with a single multi-band circuit usable from 2300 to 2690 MHz. This multi-stage structure is rated from 26 to 32... | |
| The A2I25D025N wideband integrated circuit is designed with on-chip matching that makes it usable from 2100 to 2900 MHz. This multi-stage structure is rated for 26 to 32 V operation... | |
| The A2I35H060N wideband integrated circuit is an asymmetrical Doherty designed with on-chip matching that makes it usable from 3400 to 3800 MHz. This multi-stage structure is rated for 26 to... | |
| The A3I20X050GN integrated Doherty circuit is designed with on-chip matching that makes it usable from 1800 to 2200 MHz. This multi-stage structure is rated for 20 to 32 V operation... | |
| The A3I20X050N integrated Doherty circuit is designed with on-chip matching that makes it usable from 1800 to 2200 MHz. This multi-stage structure is rated for 20 to 32 V operation... | |
| The A3I25D080N integrated Doherty circuit is designed with on chip matching that makes it usable from 2300 to 2690 MHz. This multi-stage structure is rated for 20 to 32 V... | |
| The A3I25X050N integrated Doherty circuit is designed with on-chip matching that makes it usable from 2300 to 2700 MHz. This multi-stage structure is rated for 20 to 32 V operation... | |
| The A3I35D025WN wideband integrated circuit is designed for cellular base station applications requiring very wide instantaneous bandwidth capability. This circuit includes on-chip matching that makes it usable from 3200 to... | |
| The A3M35TL039 is a fully integrated Doherty power amplifier moduledesigned for wireless infrastructure applications that demand highperformance in the smallest footprint. Ideal for applications in massive MIMOsystems, outdoor small cells... | |
| The A3M36SL039 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems,... | |
| The A3M37TL039 is a fully integrated Doherty power amplifier moduledesigned for wireless infrastructure applications that demand highperformance in the smallest footprint. Ideal for applications in massive MIMOsystems, outdoor small cells... | |
| The A3M39SL039 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems,... | |
| The A3M39TL039 is a fully integrated Doherty power amplifier moduledesigned for wireless infrastructure applications that demand highperformance in the smallest footprint. Ideal for applications in massive MIMOsystems, outdoor small cells... | |
| The A3M40PD012 is a wideband low power amplifier module designed for cellular infrastructure applications. | |
| The A5M34TG140-TC is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems,... | |
| The A5M35TG140-TC is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems,... | |
| The A5M36TG140-TC is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems,... | |
| The A5M37TG240 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems,... | |
| The A5M39TG140 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems,... | |
| The A70-1 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance an high reliability. This single stage bipolar transistor feedback amplifier design displays... | |
| The A70-2 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This single stage bipolar transistor feedback amplifier design displays... | |
| The A70-3 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This single stage bipolar transistor feedback amplifier design displays... | |
| The A72 RF amplifier is a discrete thin film hybrid design, which incorporates the use of thin film manufacturing processes for accurate performance and high reliability. This single stage bipolar... | |
| The A73 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for consistent performance and high reliability. This 2 stage bipolar transistor feedback amplifier design displays... | |
| The A74 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for consistent performance and high reliability. This 2 stage bipolar transistor feedback amplifier design displays... | |
| The A75 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This single stage bipolar transistor feedback amplifier design displays... | |
| The A76 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for consistent performance and high reliability. This 2 stage bipolar transistor feedback amplifier design displays... | |
| The A77 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. The single stage bipolar transistor feedback amplifier design displays... | |
| The A77-1 RF amplifier is a discrete hybrid design, which incorporates the use of thin film manufacturing processes for accurate performance and high reliability. The single stage silicon bipolar transistor... | |
| The A78 RF amplifier is a discrete thin film hybrid design, which incorporates the use of thin film manufacturing processes for accurate performance and high reliability. This single stage bipolar... | |
| The A79 RF amplifier is a discrete thin film hybrid design, which incorporates the use of thin film manufacturing processes for accurate performance and high reliability. This single stage bipolar... | |
| The A80 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. The 2 stage silicon bipolar feedback amplifier design displays... | |
| The A81 RF amplifier is a discrete hybrid ensign, which uses thin film manufacturing processes for accurate performance and high reliability. The 2 stage silicon bipolar feedback amplifier design displays... | |
| The A81-1 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. The 2 stage silicon bipolar feedback amplifier design displays... | |
| The A81-2 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. The 2 stage silicon bipolar feedback amplifier design displays... | |
| The A82 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. The 2 stage silicon bipolar feedback amplifier design displays... | |
| The A82-1 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. The 2 stage silicon bipolar feedback amplifier design displays... | |
| The A83-1 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for consistent performance and high reliability. This 2 stage bipolar transistor feedback amplifier design displays... | |
| The A87 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This single stage bipolar transistor feedback amplifier design displays... | |
| The A87-1 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This single stage bipolar transistor feedback amplifier design displays... | |
| The A87-2 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This single stage bipolar transistor feedback amplifier design displays... | |
| The A88 RF amplifier is a discrete thin film hybrid design, which incorporates the use of thin film manufacturing processes for accurate performance and high reliability. This single stage bipolar... | |
| The A89 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. The 2 stage silicon bipolar feedback amplifier design displays... | |
| The ABA3100 is a monolithic IC intended for use in applications requiring high linearity, such as Cellular Telephone Base Station Driver Amplifiers, CATV Fiber Receiver and Distribution Amplifiers, CATV Drop... | |
| The ABA3130 is a low noise amplifier with gain control that accepts a single-ended RF input in the 50 MHz to 1.1 GHz frequency range and provides a balanced RF... | |
| The ACA0861 family of surface mount monolithic GaAs RF Linear Amplifiers has been developed to replace, in new designs, the standard CATV Hybrid amplifiers currently in use. The MMICs consist... | |
| The ACA1205 is a surface mount monolithic GaAs RF Linear Amplifier that has been developed to replace, in new designs, the standard CATV Hybrid amplifiers currently in use. The MMIC... | |
| The ACA2402 is a highly linear, monolithic GaAs RF amplifier that has been developed as an alternative to standard CATV hybrid amplifiers. Offered in a convenient surface mount package, the... | |
| The ACA2402E is a highly linear, monolithic GaAs RF amplifier that has been developed as an alternative to standard CATV hybrid amplifiers. Offered in a convenient surface mount package, the... | |
| The ACA2407 is a highly linear, monolithic GaAs RF amplifier that has been developed to replace, in new designs, standard CATV hybrid amplifiers. Offered in a convenient surface mount package,... | |
| The AD8331 is a single channel, ultralow noise, linear-in-dB, variable gain amplifier (VGA). Optimized for ultrasound systems, it is usable as a low noise variable gain element at frequencies up... | |
| The ADA10000 is a monolithic IC intended for use in applications requiring high linearity, such as Cellular Telephone Base Station Driver Amplifiers, CATV Fiber Receiver and Distribution Amplifiers, and CATV... | |
| The ADA10001 is a monolithic IC intended for use in applications requiring high linearity, such as Cellular Telephone Base Station Driver Amplifiers, CATV Fiber Receiver and Distribution Amplifiers and CATV... | |
| The ADCA3990 is a power doubler hybrid module packaged in the industry-standard SOT115J. The device achieves extremely high RF output, up to 76.8 dBmV composite power or 67 dBmV virtual... | |
| The ADCA3992 is a high gain, power doubler hybrid amplifier optimized for a wide range of bias conditions for power efficiency and customer flexibility. The ADCA3992 is ideally suited for... | |
| The ADL5320 is a broadband, linear driver RF amplifier that operates at frequencies from 400 MHz to 2700 MHz. The device can be used in a wide variety of wired... | |
| The ADL5321 incorporates a dynamically adjustable biasing circuit that allows for the customization of OIP3 and P1dB performance from 3.3 V to 5 V without the need for an external... | |
| The ADL5321 is a broadband, linear driver RF amplifier that operates at frequencies from 2.3 GHz to 4.0 GHz. The device can be used in a wide variety of wired... | |
| The ADL5324 incorporates a dynamically adjustable biasing circuit that allows for the customization of OIP3 and P1dB performance from 3.3 V to 5 V, without the need for an external... | |
| The ADL5536 is a 20 dB linear amplifier that operates at frequencies up to 1 GHz. The device can be used in a wide variety of cellular, CATV, military, and... | |
| The ADL5541 is a broadband 15 dB linear amplifier that operates at frequencies up to 6 GHz. The device can be used in a wide variety of CATV, cellular, and... | |
| The ADL6317 is a transmit variable gain amplifier (VGA) that provides an interface from radio frequency digital-to-analog converters (RF DACs), transceivers, and systems on a chip (SoC) to power amplifiers. | |
| The ADL7003 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), balanced low noise amplifier that operates from 50 GHz to 95 GHz. | |
| The ADL8104 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise, wideband, high linearity amplifier that operates from 0.4 GHz to... | |
| The ADL8106 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), wideband low noise amplifier that operates from 18 GHz to 54 GHz. | |
| The ADL9005 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), wideband, LNA that operates from 0.01 to 26.5 GHz. The ADL9005 provides... | |
| The ADL9006 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), low noise amplifier that operates between 2 GHz and 28 GHz. The... | |
| The ADL9006CHIPS is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), low noise amplifier that operates from 2 GHz to 28 GHz. The... | |
| The ADPA1107 is a gallium nitride (GaN), broadband power amplifier, delivering 45.0 dBm (35 W) with 56.5% typical power added efficiency (PAE) across a bandwidth of 4.8 GHz to 6.0... | |
| The ADPA7001CHIPS is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), balanced medium power amplifier, with an integrated temperature compensated on-chip power detector... | |
| The ADPA7002CHIP is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), distributed power amplifier that operates from 20 GHz to 44 GHz. The... | |
| The ADPA7004CHIPS is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), balanced medium power amplifier, with an integrated temperature compensated on-chip power detector... | |
| The ADPA7005CHIP is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from 20 GHz to 44 GHz. The... | |
| The ADPA7006CHIP is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from 18 GHz to 44 GHz. The... | |
| The ADPA7007 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), 31.5 dBm saturated output power power amplifier, with an integrated temperature compensated,... | |
| The ADPA7007CHIP is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from 18 GHz to 44 GHz. The... | |
| The ADPA7008 is a gallium arsenide (GaAs), pseudomorphic highelectron mobility transistor (pHEMT), monolithic microwave integratedcircuit (MMIC), 31 dBm saturated output power (PSAT, 1 W)distributed power amplifier with an integrated temperature... | |
| The ADPA9002 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), power amplifier that operates between dc and 10 GHz. The amplifier provides... | |
| The AFIC901N is a 2-stage, high gain amplifier designed to provide a high level of flexibility to the amplifier designer. The device is unmatched even at the interstage, allowing performance... | |
| The AFLP5G25641 is an integrated multi-chip module. It consists of three stages of amplification and support circuitry to work at 3.3 V or 5 V with very low power consumption. | |
| The AFLP5G35645 is an integrated multi-chip module. It consists of three stages of amplification and support circuitry to work at 3.3 V or 5 V with very low power consumption. | |
| The AFSC5G23D37 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems,... | |
| The AFSC5G26D37 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems,... | |
| The AFSC5G26E38 is a fully integrated Doherty power amplifier moduledesigned for wireless infrastructure applications that demand highperformance in the smallest footprint. Ideal for applications in massive MIMOsystems, outdoor small cells... | |
| The AFSC5G26F38 is a fully integrated Doherty power amplifier moduledesigned for wireless infrastructure applications that demand highperformance in the smallest footprint. Ideal for applications in massive MIMOsystems, outdoor small cells... | |
| The AFSC5G35D35 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems,... | |
| The AFSC5G35D37 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems,... | |
| The AFSC5G35E38 is a fully integrated Doherty power amplifier moduledesigned for wireless infrastructure applications that demand highperformance in the smallest footprint. Ideal for applications in massive MIMOsystems, outdoor small cells... | |
| The AFSC5G37D37 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems,... | |
| The AFSC5G37E38 is a fully integrated Doherty power amplifier moduledesigned for wireless infrastructure applications that demand highperformance in the smallest footprint. Ideal for applications in massive MIMOsystems, outdoor small cells... | |
| The AFSC5G40E38 is a fully integrated Doherty power amplifier moduledesigned for wireless infrastructure applications that demand highperformance in the smallest footprint. Ideal for applications in massive MIMOsystems, outdoor small cells... | |
| The AGB3301 is one of a series of GaAs MESFET amplifiers designed for use in applications requiring high linearity, low noise and low distortion. With a high output IP3, low... | |
| The AL7 limiting amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This design uses a Schottky diode limiter circuit at... | |
| The AM-151 amplifier uses a coupler feedback design with high intercept and compression points. The use of coupler feedback minimize noise figure and DC current in a high intercept amplifier. | |
| The Analog Devices, Inc., ADCA3950 is a power doublerhybrid module packaged in the industry-standard SOT-115Jpackage. The device achieves a high RF output of 74 dBmVtotal composite power under 18 dB... | |
| The Analog Devices, Inc., ADCA3952 is a power doubler hybrid module packaged in the industry-standard SOT-115J package. The device achieves high RF output, up to 73.3 dBmV total composite power... | |
| The ARA05050 is a GaAs IC designed to provide the reverse path amplification and output level control functions in a CATV Set-Top Box or Cable Modem. It incorporates a digitally... | |
| The ARA2000 is designed to provide the reverse path amplification and output level control functions in a CATV Set-Top Box or Cable Modem. It incorporates a digitally controlled precision step... | |
| The avionics AFIC10275GN is a 2-stage RFIC designed for transponder applications operating from 978 to 1090 MHz. This device is suitable for use in pulse applications, including Mode S transponders... | |
| The avionics AFIC10275N is a 2-stage RFIC designed for transponder applications operating from 978 to 1090 MHz. This device is suitable for use in pulse applications, including Mode S transponders... | |
| The AWL9924 dual band power amplifier is a high performance InGaP HBT power amplifier IC designed for transmit applications in the 2.4-2.5 GHz and 4.9-5.9 GHz band. Matched to 50... | |
| The AWT6135 meets the increasing demands for higher efficiency and linearity in CDMA 1XRTT handsets. The PA module is optimized for VREF = +2.8 V, a requirement for compatibility... | |
| The AWT6136 is a high power, high efficiency amplifier module for CDMA wireless handset applications. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature... | |
| The AWT6241 HELP3TM PA is a next generation product for UMTS handsets. This PA incorporates ANADIGICS’ HELP3TM technology to provide low power consumption without the need for an... | |
| The AWT6251 meets the increasing demands for higher output power in 3GPP handsets. The PA module is optimized for VREF = +2.85 V, a requirement for compatibility with the Qualcomm® | |
| The AWT6252 meets the increasing demands for higher output power in 3GPP 1XRTT handsets. The PA module is optimized for VREF = +2.85 V, a requirement for compatibility with the... | |
| The AWT6274 meets the increasing demands for higher output power in UMTS handsets. The PA module is optimized for VREF = +2.85 V, a requirement for compatibility with the Qualcomm® | |
| The AWT6275 meets the increasing demands for higher output power in UMTS handsets. The PA module is optimized for VREF = +2.85 V, a requirement for compatibility with the Qualcomm® | |
| The AWT6332 is a new product in the revolutionary ZeroIC™ PA family. The AWT6332 uses ANADIGICS’ exclusive InGaP-Plus™ technology, which combines HBT and pHEMT devices on the same die, to... | |
| The AWT6621 HELP4TM PA is a 4th generation HELPTM product for WCDMA devices operating in UMTS2100 (Band 1) and for CDMA devices operating in Band Class 6. This... | |
| The BGA6130 is a one-stage silicon MMIC amplifier, offered in a low-cost leadless surface-mount package. At 3.6 V it delivers 29.5 dBm output power at 3 dB gain compression with... | |
| This 120 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 595 to 851 MHz. |
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