Microchip Technology, Inc. RF & MW LNA MMA042AA

Description
MMA042AA is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high-electron mobility transistor (pHEMT) distributed amplifier die that operates between 2 GHz and 26 GHz. It is ideal for test instrumentation, defense, and space applications. The amplifier provides a 2 dB positive gain slope with a typical gain of 18 dB, 2 dB noise figure, 19 dBm of output power at 1 dB gain compression, and 29 dBm output IP3 at 10 GHz. The MMA042AA amplifier features RF I/Os that are internally matched to 50 Ohm, which allows for easy integration into multi-chip modules (MCMs). Applications Test and measurement instrumentation Electronic warfare (EW), electronic counter measures (ECM), and electronic counter-counter measures(ECCM) Military and space Telecom infrastructure Wideband microwave radios Microwave and millimeter-wave communication systems
  • RF & MW LNA - MMA042AA - Richardson RFPD
    Richardson RFPD
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Description
MMA042AA is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high-electron mobility transistor (pHEMT) distributed amplifier die that operates between 2 GHz and 26 GHz. It is ideal for test instrumentation, defense, and space applications. The amplifier provides a 2 dB positive gain slope with a typical gain of 18 dB, 2 dB noise figure, 19 dBm of output power at 1 dB gain compression, and 29 dBm output IP3 at 10 GHz. The MMA042AA amplifier features RF I/Os that are internally matched to 50 Ohm, which allows for easy integration into multi-chip modules (MCMs). Applications Test and measurement instrumentation Electronic warfare (EW), electronic counter measures (ECM), and electronic counter-counter measures(ECCM) Military and space Telecom infrastructure Wideband microwave radios Microwave and millimeter-wave communication systems
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Suppliers

Company
Product
Description
Supplier Links
RF & MW LNA - MMA042AA - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
RF & MW LNA
MMA042AA
RF & MW LNA MMA042AA
MMA042AA is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high-electron mobility transistor (pHEMT) distributed amplifier die that operates between 2 GHz and 26 GHz. It is ideal for test instrumentation, defense, and space applications. The amplifier provides a 2 dB positive gain slope with a typical gain of 18 dB, 2 dB noise figure, 19 dBm of output power at 1 dB gain compression, and 29 dBm output IP3 at 10 GHz. The MMA042AA amplifier features RF I/Os that are internally matched to 50 Ohm, which allows for easy integration into multi-chip modules (MCMs). Applications Test and measurement instrumentation Electronic warfare (EW), electronic counter measures (ECM), and electronic counter-counter measures(ECCM) Military and space Telecom infrastructure Wideband microwave radios Microwave and millimeter-wave communication systems

MMA042AA is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high-electron mobility transistor (pHEMT) distributed amplifier die that operates between 2 GHz and 26 GHz. It is ideal for test instrumentation, defense, and space applications. The amplifier provides a 2 dB positive gain slope with a typical gain of 18 dB, 2 dB noise figure, 19 dBm of output power at 1 dB gain compression, and 29 dBm output IP3 at 10 GHz. The MMA042AA amplifier features RF I/Os that are internally matched to 50 Ohm, which allows for easy integration into multi-chip modules (MCMs).

Applications

  • Test and measurement instrumentation
  • Electronic warfare (EW), electronic counter measures (ECM), and electronic counter-counter measures(ECCM)
  • Military and space
  • Telecom infrastructure
  • Wideband microwave radios
  • Microwave and millimeter-wave communication systems
Supplier's Site
Acme Chip Technology Co., Limited
Shenzhen, China
RF and Wireless - RF Amplifiers
MMA042AA
RF and Wireless - RF Amplifiers MMA042AA
IC RF AMP GPS 2GHZ-26GHZ DIE

IC RF AMP GPS 2GHZ-26GHZ DIE

Supplier's Site

Technical Specifications

  Richardson RFPD Acme Chip Technology Co., Limited
Product Category RF Amplifiers RF Amplifiers
Product Number MMA042AA MMA042AA
Product Name RF & MW LNA RF and Wireless - RF Amplifiers
Amplifier Type Low Noise Amplifier
Frequency Range 2000 to 26000 MHz 2000 to 26000 MHz
Maximum Gain 18.5 dB 20 dB
Output Power 20 dBm
Noise Figure 2.5 dB
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