Microchip Technology, Inc. RF & MW LNA MMA042AA

MMA042AA is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high-electron mobility transistor (pHEMT) distributed amplifier die that operates between 2 GHz and 26 GHz. It is ideal for test instrumentation, defense, and space applications. The amplifier provides a 2 dB positive gain slope with a typical gain of 18 dB, 2 dB noise figure, 19 dBm of output power at 1 dB gain compression, and 29 dBm output IP3 at 10 GHz. The MMA042AA amplifier features RF I/Os that are internally matched to 50 Ohm, which allows for easy integration into multi-chip modules (MCMs). Applications Test and measurement instrumentation Electronic warfare (EW), electronic counter measures (ECM), and electronic counter-counter measures(ECCM) Military and space Telecom infrastructure Wideband microwave radios Microwave and millimeter-wave communication systems