Microchip Technology, Inc. RF & MW LNA MMA041AA

Description
MMA041AA is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high-electron mobility transistor (pHEMT) distributed amplifier die that operates between DC and 26 GHz. It is ideal for test instrumentation and communications infrastructure applications. The amplifier provides a flat gain of 18 dB, 3.2 dB noise figure, and 22 dBm of output power at 1 dBm gain compression while requiring only 150 mA from a 7 V supply. Output IP3 is typically 36 dBm. The MMA041AA amplifier features RF I/Os that are internally matched to 50 Ω, which allows for easy integration into multi-chip modules (MCMs).
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Description
MMA041AA is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high-electron mobility transistor (pHEMT) distributed amplifier die that operates between DC and 26 GHz. It is ideal for test instrumentation and communications infrastructure applications. The amplifier provides a flat gain of 18 dB, 3.2 dB noise figure, and 22 dBm of output power at 1 dBm gain compression while requiring only 150 mA from a 7 V supply. Output IP3 is typically 36 dBm. The MMA041AA amplifier features RF I/Os that are internally matched to 50 Ω, which allows for easy integration into multi-chip modules (MCMs).
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Suppliers

Company
Product
Description
Supplier Links
RF & MW LNA - MMA041AA - Richardson RFPD
Downers Grove, IL, United States
RF & MW LNA
MMA041AA
RF & MW LNA MMA041AA
MMA041AA is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high-electron mobility transistor (pHEMT) distributed amplifier die that operates between DC and 26 GHz. It is ideal for test instrumentation and communications infrastructure applications. The amplifier provides a flat gain of 18 dB, 3.2 dB noise figure, and 22 dBm of output power at 1 dBm gain compression while requiring only 150 mA from a 7 V supply. Output IP3 is typically 36 dBm. The MMA041AA amplifier features RF I/Os that are internally matched to 50 Ω, which allows for easy integration into multi-chip modules (MCMs).

MMA041AA is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high-electron mobility transistor (pHEMT) distributed amplifier die that operates between DC and 26 GHz. It is ideal for test instrumentation and communications infrastructure applications. The amplifier provides a flat gain of 18 dB, 3.2 dB noise figure, and 22 dBm of output power at 1 dBm gain compression while requiring only 150 mA from a 7 V supply. Output IP3 is typically 36 dBm. The MMA041AA amplifier features RF I/Os that are internally matched to 50 Ω, which allows for easy integration into multi-chip modules (MCMs).

Supplier's Site
Futian, China
RF and Wireless - RF Amplifiers
MMA041AA
RF and Wireless - RF Amplifiers MMA041AA
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Supplier's Site

Technical Specifications

  Richardson RFPD Shenzhen Shengyu Electronics Technology Limited
Product Category RF Amplifiers RF Amplifiers
Product Number MMA041AA MMA041AA
Product Name RF & MW LNA RF and Wireless - RF Amplifiers
Amplifier Type Low Noise Amplifier
Frequency Range 0.0 to 26000 MHz 0.0 to 26000 MHz
Maximum Gain 18.5 dB 18 dB
Output Power 22 dBm
Noise Figure 3.2 dB
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