MMA051PP45 is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high-electron-mobili
ty transistor (pHEMT) distributed amplifier that operates between DC and 22 GHz. It is ideal for test instrumentation, wideband military and space applications. The amplifier provides a flat gain of 14 dB, 3.5 dB noise figure, and 30 dBm of output power at 3 dB gain compression at 10 GHZ with a nominal bias condition of 10 V 350 mA. Output IP3 is typically 35 dBm. The MMA051PP45 amplifier features RF I/Os that are internally matched to 50 Ohm, which is ideal for any surface mount technology (SMT) assembly equipment.
MMA051PP45 is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high-electron-mobility transistor (pHEMT) distributed amplifier that operates between DC and 22 GHz. It is ideal for test instrumentation, wideband military and space applications. The amplifier provides a flat gain of 14 dB, 3.5 dB noise figure, and 30 dBm of output power at 3 dB gain compression at 10 GHZ with a nominal bias condition of 10 V 350 mA. Output IP3 is typically 35 dBm. The MMA051PP45 amplifier features RF I/Os that are internally matched to 50 Ohm, which is ideal for any surface mount technology (SMT) assembly equipment.
