Richardson RFPD Datasheets for Varactor Diodes
Varactor diodes are p-n junction diodes that are designed to act as a voltage controlled capacitance when operated under reverse bias.
Varactor Diodes: Learn more
| Product Name | Notes |
|---|---|
| Abrupt Junction Varactor Diode Chip | |
| Dual Diode - Common Cathode Configuration: MACOM's MA4ST1200 series is a highly repeatable, UHCVD/ion-implanted, hyper abrupt silicon tuning varactor in a cost effective surface mount package. This series of varactors... | |
| Hyberabrupt Junction Tuning Varactor Diode Chip | |
| Hyberabrupt Junction Tuning Varactor Diode | |
| Hyberabrupt Junction Tuning Varactor | |
| Hyberabrupt Junction Tuning Varactors | |
| Hyperabrupt Junction Tuning Varactor | |
| Hyperabrupt Tuning Varactors Supplied on Film Frame and Waffle Packs | |
| M/A-COM Technology Solutions’ MAVR-000120-1411 is a gallium arsenide flip chip hyperabrupt varactor diode. This device is fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and... | |
| Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the... | |
| Silicon Hyperabrupt Varactor Diode Chips | |
| Single Diode Configuration: MACOM offers four families of low cost surface mount gallium arsenide tuning varactors. All families have silicon nitride protected junctions for low leakage current and high reliability. | |
| Single Diode Configuration: MACOM's MA45400 series is a highly repeatable, UHCVD/ion-implanted, abrupt silicon tuning varactor in a cost effective surface mount package. This series of varactors is designed for general... | |
| Single Diode Configuration: MACOM's MA46H120 series is a gallium arsenide flip chip hyper abrupt varactor diode. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high... | |
| Single Diode Configuration: MACOM's MA4ST1200 series is a highly repeatable, UHCVD/ion-implanted, hyper abrupt silicon tuning varactor in a cost effective surface mount package. This series of varactors is designed for... | |
| Single Diode Configuration: The MA45300 series of silicon abrupt junction tuning varactors has been designed to obtain the highest Q possible. All diodes in this series have a high density... | |
| Single Diode Configuration: The MA46450 series of tuning varactors are hyperabrupt junction Gallium Arsenide diodes featuring constant gamma 1.0. These diodes offer high Q (up to 4000) permitting excellent tuning... | |
| Single Diode Configuration: The MA46450, MA46470 and MA46410 series of tuning varactors are hyperabrupt junction Gallium Arsenide diodes featuring constant gamma 1.0 (MA46450 series), 1.25 (MA46470 series) or 1.5 (MA46410... | |
| Single Diode Configuration: The MA46580, MA46585 and MA46H130 series of beam lead constant gamma tuning varactors are hyperabrupt junction gallium arsenide diodes with a constant gamma of 1.0 or 1.25. | |
| Single Diode Configuration: The MA46600 series of microwave tuning varactors is a family of abrupt junction gallium arsenide devices featuring Q factors in excess of 8000. This series is specifically... | |
| Single Diode Configuration: The MA4ST079 through MA4ST083 series of silicon hyperabrupt junction tuning varactors is produced with ion implantation and advanced epitaxial growth techniques. These diodes have thermal oxide passivation,... | |
| Single Diode Configuration: The MA4ST1300 series is a highly repeatable, UHCVD/ion-implanted, hyperabrupt silicon tuning varactor in a cost effective surface mount package. This series of varactors is designed for high... | |
| Single Diode Configuration: The MA4ST200 series is a ion-implanted, hyperabrupt junction, silicon tuning varactors in surface mount packages. This series of varactors is designed for high Q and low voltage... | |
| Single Diode Configuration: The MA4ST300 series are ion-implanted, hyper abrupt junction, silicon tuning varactors in SC79, SC70 3LD, and SOD-323 surface mount packages. This series of varactors is designed for... | |
| Single Diode Configuration: The MA4ST400 series are ion-implanted, hyperabrupt junction, silicon tuning varactors in the SOT-23 surface mount package. These thermal oxide passivated diodes feature high capacitance ratio and quality... | |
| Single Diode Configuration: The MA4ST550 family of high Q Silicon Hyperabrupt Tuning Varactors is available in a series of low parasitic capacitance microwave packages or in chip form. The MA4ST550... | |
| SMV2026 Series: Surface-Mount, Silicon Hyperabrupt Tuning Varactor Diodes. The SMV2026 series are silicon surface-mount, hyperabrupt tuning varactor diodes, excellent for use as high-Q tuning elements in an RF Voltage Controlled... | |
| Surface Mount, 0402 Silicon Abrupt Tuning Varactor Diode | |
| Surface Mount, 0402 Silicon Hyperabrupt Tuning Varactor Diode | |
| The MAVR-011020-1411 is a gallium arsenide flip chip hyperabrupt varactor diode. This device is fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low... | |
| The SMV1263 series of silicon hyperabrupt junction varactor diodes are designed for 3 V platforms. The high capacitance ratio and low reverse voltage of these varactors make them attractive for... | |
| The SMV1270 series are silicon hyperabrupt junction varactor diodes specifically designed for battery operation. The specified high capacitance ratio and low reverse voltage make these varactors appropriate for low-noise Voltage-Controlled... | |
| The SMV1405-040LF is a silicon abrupt junction varactor diode designed for use in Voltage Controlled Oscillators (VCOs) that require tight capacitance tolerances. The low resistance of this varactor makes it... | |
| The SMV1405-SMV1413 group of silicon abrupt junction varactor diodes is designed for use in Voltage Controlled Oscillators (VCOs) requiring tight capacitance tolerances. The low resistance of these varactors makes them... | |
| The SMV1702-011LF silicon hyperabrupt junction varactor diode is specifically designed for battery operation. The high capacitance ratio and low series resistance make this varactor appropriate for low-noise Voltage Controlled Oscillators... | |
| The SMV1705 group of silicon hyperabrupt junction varactor diodes is specifically designed for battery operation. The specified high capacitance ratio and low reverse voltage of these varactors make them appropriate... | |
| The SMV2025-079LF is a silicon surface mount, hyperabrupt tuning varactor diode excellent for use as a high-Q tuning element in an RF Voltage Controlled Oscillator (VCO), voltage-controlled phase shifter, or... | |
| The SMV2201-SMV2205 series are silicon hyperabrupt junction varactor diodes specifically designed for wide bandwidth, low-loss applications. The specified high capacitance ratio and low reverse voltage make these varactors appropriate for... | |
| The SMVA1248-079LF silicon hyperabrupt junction varactor diode is designed for use in voltage controlled oscillators (VCOs) with a low tuning voltage operation and is ideal for in-vehicle infotainment applications. This... | |
| The SMVA1253-079LF silicon hyperabrupt junction varactor diode is designed for use in voltage controlled oscillators (VCOs) with a low tuning voltage operation and is ideal for in-vehicle infotainment applications. This... | |
| The SMVA1470-004LF is a dual silicon, hyperabrupt junction varactor diode in a common cathode configuration. The specified high capacitance ratio and low series resistance make this varactor appropriate for low-noise... |