Richardson RFPD Datasheets for RF MOSFET Transistors

MOSFET RF transistors are metal-oxide semiconductor field-effect transistors (MOSFETs) that are designed to handle high-power RF signals from devices such as stereo amplifiers, radio transmitters, TV monitors, etc.
RF MOSFET Transistors: Learn more

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Product Name Notes
150 W – 50 V moisture resistant HF/VHF DMOS transistor. The SD2931-12MR is a gold metallized Nchannel MOS field-effect RF power transistor. Electrically identical to the standard SD2931 MOSFET, it...
2½W, 10dB gain @ 1GHz. Excellent surface-mount part for hand-held applications.
300W, 13dB gain @175MHz. The leading MOSFET for high linearity transmitters.
40W, 16dB gain @ 175MHz. General purpose RF power MOSFET
Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM...
Designed for broadband commercial and military applications up to 200 MHz frequency range. The high-power, high-gain and broadband performance of this device make possible solid state transmitters for FM broadcast...
Designed for broadband commercial and military applications up to 200 MHz frequency range. The high-power, high-gain and broadband performance of this device makes possible solid state transmitters for FM broadcast...
Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as a driver or output amplifier in push-pull configurations. Can be used in manual gain...
Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid...
Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz frequency range. The high power, high gain and broadband performance of each device makes...
Designed for broadband commercial and military applications using single ended circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of this device makes possible solid...
Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz.
Designed for wideband large-signal amplifier and oscillator applications to 500 MHz.
Designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push-pull configuration.
Designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range, in single ended configuration.
Designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range.
Designed for wideband large-signal output and driver stages up to 400 MHz range.
Designed primarily for linear large-signal output stages in the 2.0-100 MHz frequency range.
Designed primarily for linear large-signal output stages to 80 MHz.
Designed primarily for linear large-signal output stages up to 150 MHz frequency range.
Designed primarily for linear large-signal output stages up to150 MHz frequency range.
Designed primarily for wideband large-signal output and driver from 30-500 MHz.
Designed primarily for wideband large-signal output and driver stages from 100 - 500 MHz.
Designed primarily for wideband large-signal output and driver stages from 30-200 MHz
Designed primarily for wideband large-signal output and driver stages to 30 - 500 MHz.
Designed primarily for wideband large-signal output and driver stages up to 200 MHz frequency range.
Gold metallized multi-purpose silicon DMOS RF FET 15W 12.5V 500 MHz push-pull
HF/VHF/UHF RF power N-channel MOSFET. The SD2932 is a gold metalized N-channel MOS field-effect RF power transistor, intended for use in 50 V dc large signal applications up to 250...
HF/VHF/UHF RF power N-channel MOSFET. The SD2933 is a gold metalized N-channel MOS field-effect RF power transistor, intended for use in 50 V dc large signal applications up to 150...
New Product! BeO-free package, only 0.2 0C/W thermal resistance. 300W, 16dB gain @ 175MHz
RF MOSFET performance can be severely limited by the driver selection. The DRF1400A and B are half bridge hybrids with symmetrically orientated leads so that the two can easily be...
RF Power Mosfet. N-Channel Push - Pull Pair. The ARF477FL is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull...
RF power transistor: HF/VHF/UHF N-channel MOSFETs. The STAC2933 is a gold metallized N-channel MOS field-effect RF power transistor, intended for use in 50 V dc large signal applications up 150...
RF power transistors HF/VHF/UHF N-channel MOSFETs
RF Power Vertical MOSFET. The VRF141 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,...
RF Power Vertical MOSFET. The VRF148A is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,...
RF Power Vertical MOSFET. The VRF150 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,...
RF Power Vertical MOSFET. The VRF151 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,...
RF Power Vertical MOSFET. The VRF152 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,...
RF Power Vertical Mosfet. The VRF152 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness.
RF Power Vertical MOSFET. The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,...
RF Power Vertical MOSFET. The VRF157FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,...
Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the...
The ARF1500 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.
The ARF1501 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.
The ARF1505 is an RF power transistor designed for off-line 300V operation in very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40...
The ARF1510 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and...
The ARF1511 is four RF power transistor arranged in an H-Bridge confi guration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator...
The ARF1519 is an RF power transistor designed for very high power scienti fi c, commercial, medical and industrial RF power generator and amplifier applications up to 25 MHz.
The ARF300 is a N-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at...
The ARF446 comprise a symmetric pair of common source RF power transistor designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz.
The ARF447 comprise a symmetric pair of common source RF power transistor designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz.
The ARF448A comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz.
The ARF449A comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 120 MHz.
The ARF460A comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65MHz. They have been...
The ARF460B comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65MHz. They have been...
The ARF461A comprise a symmetric pair of common drain RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have...
The ARF461B comprise a symmetric pair of common drain RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have...
The ARF463AG comprises a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. It has...
The ARF463AP1 comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 100MHz. They have been...
The ARF463BG comprises a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. It has...
The ARF463BP1 comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 100MHz. They have been...
The ARF465A comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 60 MHz.
The ARF465B comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 60 MHz.
The ARF466A comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 45 MHz. They have...
The ARF466B comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 45 MHz. They have...
The ARF466FL is a rugged high voltage RF power transistor designed for scientific, commercial, medical and industrial RF power amplifier applications up to 45 MHz. It has been optimized for...
The ARF475FL is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and...
The ARF476FL is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and...
The DRF1200 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and Non-Inverting. It was designed to provide the system...
The DRF1201 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and Non-Inverting. It was designed to provide the system...
The DRF1203 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and Non-Inverting. It was designed to provide the system...
The DRF1300 is a push-pull hybrid containing two high power gate drivers and two power MOSFETs. It was designed to provide the system designer increased flexibility, higher performance, and lowered...
The DRF1301 is a push-pull hybrid containing two high power gate drivers and two power MOSFETs. It was designed to provide the system designer increased flexibility, higher performance, and lowered...
The SD2918 is a gold metallized N-Channel MOS field-effect RF power transistor. SD2918 is intended for use in 50 V DC large signal applications up to 200 MHz.
The SD2931-10 is a gold metallized N-channel MOS field-effect RF power transistor. Being electrically identical to the standard SD2931 MOSFET, it is intended for use in 50 V dc large...
The SD2932 is a gold metalized N-channel MOS field-effect RF power transistor, intended for use in 50 V dc large signal applications up to 250 MHz.
The SD2933W is a gold metallized N-Channel MOS field-effect RF power transistor. SD2933W is intended for use in 50 V dc large signal applications up 150 MHz. The SD2933W is...
The SD2941-10 is a gold metallized N-Channel MOS field-effect RF power transistor, intended for use in 50 V dc large signal applications up to 230 MHz. It is offering 25%...
The SD2941-10W is a gold metallized N-Channel MOS field-effect RF power transistor, intended for use in 50 V dc large signal applications up to 230 MHz. SD2941-10W offers 25% lower...
The SD2942W is a gold metallized N-channel MOS field-effect RF power transistor. The SD2942W offers 25% lower RDS(ON) than industry standard and 20% higher power saturation than ST SD2932. These...
The SD2943 is a gold metallized
The SD2943 is
The SD3931-10 is a gold metallized N-channel MOS field-effect RF power transistor. It is intended for use in 100 V DC large signal applications up to 150 MHz.
The SD3932 is a gold metallized N-channel MOS field-effect RF power transistor. It is intended for use in 100V DC large signal applications up to 250 MHz.
The SD3933 is a gold metallized N-channel MOS field-effect RF power transistor. SD3933 is intended for use in 100 V DC large signal applications up to 200 MHz.
The SD4931 is a N-channel MOS field-effect RF power transistor. SD4931 is intended for use in 50 V DC large signal applications up to 250 MHz.
The SD4933 is a N-channel MOS field-effect RF power transistor. SD4933 features higher breakdown voltage and VSWR making SD4933 ideal for use in 50 V ISM applications up to 100...
The SD4933MR is an N-channel MOS field-effect RF power transistor. It is intended for use in 50 V ISM applications up to 100 MHz. The SD4933MR benefits from the latest...
The STAC150V2-350E is a high voltage Nchannel MOS field-effect RF power transistor especially designed for 150V Industrial RF power class E generators such as PECVD plasma sputtering, flat panel and...
The STAC2932BW is a gold metallized N-channel MOS field-effect RF power transistor. STAC2932BW is intended for use in 50 V DC large signal applications up to 250 MHz. The STAC2932BW...
The STAC2942BW is a gold metallized N-channel MOS field-effect RF power transistor. STAC2942BW is intended for use in 50 V DC large signal applications up to 250 MHz. The STAC2942BW...
The STAC3932B is a gold metallized N-channel MOS field-effect RF power transistor. STAC3932B is intended for use in 50 V DC large signal applications up to 250 MHz.
The STAC4932B is a N-channel MOS field-effect RF power transistor. STAC4932B is intended for 100 V pulse applications up to 250 MHz. STAC4932B is suitable for use in industrial, scientific...
The STAC4932F is a N-channel MOS field-effect RF power transistor. STAC4932F is intended for 100 V pulse applications up to 250 MHz. STAC4932F is suitable for use in industrial, scientific...
The VRF150 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion.
The VRF151 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion.
The VRF151G is designed for broadband commercial and military applications at frequencies to 175MHz. The high power, high gain, and broadband performance of this device make possible solid state transmitters...
The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.
The VRF157FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.

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