Richardson RFPD Datasheets for Schottky Diodes
Schottky diodes in their simplest form consist of a metal layer that contacts a semiconductor element. The metal / semiconductor junctions exhibit rectifying behavior (i.e., the current passes through the structure more readily with one polarity than the other).
Schottky Diodes: Learn more
| Product Name | Notes |
|---|---|
| DME, DMF, DMJ Series: Silicon Beam-Lead Schottky Mixer Diodes—Singles, Pairs and Quads Bondable and Packaged Chips | |
| Dual Diode - Connected (Anti-Parallel) Configuration: MACOM's MA4E1317 single, MA4E1318 anti-parallel pair, MA4E1319-1 reverse tee, MA4E1319-2 series tee and MA4E2160 unconnected anti-parallel pair are gallium arsenide flip chip Schottky barrier... | |
| Dual Diode - Connected (Anti-Parallel) Configuration: MACOM's MA4E2037 single, MA4E2039 anti-parallel pair and MA4E2040 series tee are gallium arsenide beam lead Schottky barrier diodes. These devices are fabricated on OMCVD... | |
| Dual Diode - Connected (Anti-Parallel) Configuration: The MA4E2508 SURMOUNT™ Anti-Parallel Diode Series are Silicon Low, Medium, & High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC)... | |
| Dual Diode - Reverse Series Pair (Reverse Tee) Configuration: MACOM's MA4E1317 single, MA4E1318 anti-parallel pair, MA4E1319-1 reverse tee, MA4E1319-2 series tee and MA4E2160 unconnected anti-parallel pair are gallium arsenide flip... | |
| Dual Diode - Reverse Series Pair (Reverse Tee) Configuration: The MA4E2054 series are low barrier n-type silicon Schottky diodes assembled in low cost surface mount plastic packages. They are designed... | |
| Dual Diode - Reverse Series Pair (Reverse Tee) Configuration: The MA4E2200 series are Silicon zero bias P-type detector diodes assembled in low cost surface mount plastic packages. They are designed... | |
| Dual Diode - Reverse Series Pair (Reverse Tee) Configuration: The MA4E2513L-1289 SURMOUNT™ Diodes are Silicon Low Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC... | |
| Dual Diode - Series Pair (Tee) Configuration: The MA4E1317 single, MA4E1318 anti-parallel pair, MA4E1319-1 reverse tee, MA4E1319-2 series tee and MA4E2160 unconnected anti-parallel pair are gallium arsenide flip chip Schottky... | |
| Dual Diode - Series Pair (Tee) Configuration: The MA4E1338 series is a silicon medium barrier Schottky diode suitable for use in mixer, detector and limiter circuits. These diodes are also... | |
| Dual Diode - Series Pair (Tee) Configuration: The MA4E1339 series is a silicon medium barrier Schottky diode suitable for use in mixer, detector and limiter circuits. These diodes are also... | |
| Dual Diode - Series Pair (Tee) Configuration: The MA4E1340 series is a silicon medium barrier schottky diode suitable for use in mixer, detector and limiter circuits. These diodes are also... | |
| Dual Diode - Series Pair (Tee) Configuration: The MA4E2040 series tee are gallium arsenide beam lead Schottky barrier diodes. These devices are fabricated on OMCVD epitaxial wafers using a process... | |
| Dual Diode - Series Pair (Tee) Configuration: The MA4E2054 series are low barrier n-type silicon Schottky diodes assembled in low cost surface mount plastic packages. They are designed for use... | |
| Dual Diode - Series Pair (Tee) Configuration: The MA4E2200 series are Silicon zero bias P-type detector diodes assembled in low cost surface mount plastic packages. They are designed for usage... | |
| Dual Diode - Series Pair (Tee) Configuration: The MA4E2514 SURMOUNT™ Diode Tee Series are Silicon Low, and Medium Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC)... | |
| HIGH VOLTAGE SCHOTTKY DIODE. Applications: Parallel Diode, Free Wheeling Diode, Snubber Diode, Uninterruptible Power Supply (UPS), 48 Volt Output Rectifiers, High Speed Rectifiers. Features: Ultrafast Recovery Times, Soft Recovery Characteristics,... | |
| HIGH VOLTAGE SCHOTTKY DIODE. Applications: Rectifiers in Switchmode Power Supplies (SMPS), Free Wheeling Diode in Low Voltage Converters. Features: Ultrafast Recovery Times, Soft Recovery Characteristics, Popular TO-227 Package, Rugged -... | |
| M/A-COM's MADS-001317-1500 single is a gallium arsenide flip chip Schottky barrier diode. This device is fabricated on OMCVD epitaxial material using a process designed for high device uniformity and extremely... | |
| Quad Diode Cross-Over Configuration: The MA4E2544L-1282 Series SurMount™ Low Barrier, Silicon Schottky Cross-Over Quad Diodes are fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of... | |
| Quad Diode Ring Configuration: The MA4E2532-1113 Series SURMOUNT™ Low and Medium Barrier, Silicon Schottky Ring Quad Diodes are fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits... | |
| Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the... | |
| Schottky Limiter DC-6 GHz. The MADS-011010 is a Schottky limiter assembled in a lead-free 1.5 x 1.2 mm TDFN surface mount plastic package. This device provides broadband performance as well... | |
| Schottky PowerMod | |
| Silicon Beamless Schottky Diodes—Pairs and Quads | |
| Silicon Beamless Schottky Diodes-Pairs and Quads | |
| Silicon Schottky Barrier Diodes: Packaged, Bondable Chips and Beam-Leads | |
| Silicon Schottky Diode Chip | |
| Silicon Schottky Diode Chips | |
| Single Diode Configuration: MACOM's MA4E1317 single, MA4E1318 anti-parallel pair, MA4E1319-1 reverse tee, MA4E1319-2 series tee and MA4E2160 unconnected anti-parallel pair are gallium arsenide flip chip Schottky barrier diodes. These devices... | |
| Single Diode Configuration: MACOM's MA4E2037 single, MA4E2039 anti-parallel pair and MA4E2040 series tee are gallium arsenide beam lead Schottky barrier diodes. These devices are fabricated on OMCVD epitaxial wafers using... | |
| Single Diode Configuration: The diodes have low noise figure through 26 GHz. Low Barrier diodes for minimum LO drive. Stripline and microstrip mixers from 100 MHz Upconverters. | |
| Single Diode Configuration: The MA4E1339 series is a silicon medium barrier Schottky diode suitable for use in mixer, detector and limiter circuits. These diodes are also usable in anti-parallel, shunt... | |
| Single Diode Configuration: The MA4E1340 series is a silicon medium barrier schottky diode suitable for use in mixer, detector and limiter circuits. These diodes are also suitable for usage in... | |
| Single Diode Configuration: The MA4E2054 series are low barrier n-type silicon Schottky diodes assembled in low cost surface mount plastic packages. They are designed for use as high performance mixer... | |
| Single Diode Configuration: The MA4E2054L-1261 diode is a low barrier, n-type, silicon Schottky device. It is useful as a high performance mixer or detector diode at frequencies from VHF through... | |
| Single Diode Configuration: The MA4E2200 series are Silicon zero bias P-type detector diodes assembled in low cost surface mount plastic packages. They are designed for usage in a wide variety... | |
| Single Diode Configuration: The MA4E2501L-1290 SurMount™ Diodes are Silicon Low Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which... | |
| Single Diode Configuration: The MA4E2502 SURMOUNT™ Series Diodes are Silicon Low, Medium, and High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist... | |
| Single Diode Configuration: This family of low capacitance Schottky diodes is designed to give superior performance in video detectors and power monitors from 100 MHz through 40 GHz. They have... | |
| Single Diode Configuration: This family of Zero Bias Detector (ZBD) diodes is designed for use in video detectors and power monitors eliminating the need to provide external DC Bias to... | |
| Single Diode Configuration: This Zero Bias Detector (ZBD) diode is suitable for use in microstrip or stripline detector circuits. The 4 mil diameter gold pad and sturdy construction allow you... | |
| Skyworks beam-lead silicon Schottky barrier mixer diodes are designed for applications through 40 GHz. The beam-lead design reduces the problem of bonding to the very small area characteristic of low... | |
| Skyworks CLA series of silicon limiter diodes provides passive receiver protection over a wide range of frequencies from 100 MHz to over 30 GHz. These devices use Skyworks well-established silicon... | |
| Surface Mount General Purpose Schottky Diodes | |
| Surface Mount Mixer and Detector Schottky Diodes | |
| Surface Mount Schottky Quad Mixer Diodes | |
| The MA4E1338 series is a silicon medium barrier Schottky diode suitable for use in mixer, detector and limiter circuits. These diodes are also suitable for usage in anti-parallel, shunt power... | |
| The MA4E2054 series are low barrier n-type silicon Schottky diodes assembled in low cost surface mount plastic packages. They are designed for use as high performance mixer and detector diodes. | |
| The MA4E2200 series are silicon zero bias P-type detector diodes assembled in low cost surface mount plastic packages. They are designed for usage in a wide variety of detector applications. | |
| The MADZ-011001 is a terahertz cutoff frequency,gallium arsenide flip chip Schottky barrier diode. Thisdiode is fabricated on a OMCVD epitaxial waferusing a process designed for high device uniformityand extremely low... | |
| The MADZ-011004, reverse tee, is a gallium arsenide flip chip THz Schottky barrier diode. The device is fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity... | |
| This series of Skyworks GaAs Schottky barrier flip-chip diodes produces excellent high frequency performance up to millimeter wave ranges in a mechanically robust, small form factor. These diodes are comprised... | |
| This silicon diode is packaged in a hermetic axial lead glass package. Various uses include detecting, mixing and switching at low power levels. It is suitable for commercial switching along... | |
| This SMT limiting diode driver element consists of a specially processed Schottky diode packaged in a convenient, low-cost plastic outline suitable for standard or co-planar microstrip circuits. Featuring lowloss, low... | |
| Zero Bias Silicon Schottky Barrier Detector Diodes |