Richardson RFPD Datasheets for Power Bipolar Transistors

Power bipolar transistors are semiconductors in which a base n-type or p-type layer is sandwiched between emitter and collector layers of the opposite type. The junctions between the semiconductor sections amplify weak incoming electrical signals.
Power Bipolar Transistors: Learn more

Product Name Notes
Avionics Power Transistors
AVIONICS-190W-TRANSI STOR
AVIONICS-20W-TRANSIS TOR
AVIONICS-70W-TRANSIS TOR
Designed primarily for high voltage applications as a high power linear amplifiers from 2 to 30 MHz. Ideal for marine and base station equipment.
In the push-pull circuit configuration it is preferred that the transistors are used as matched pairs to obtain optimum performance. The matching procedure used by MACOM consists of measuring hFE...
Radar Power Transistors
Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the...
The MDS800 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems at 1090 MHz, with the pulse width and duty required for MODE-S applications. The...
The MS2213 is a silicon NPN bipolar device specifically designed for JTIDS pulsed power applications from 960-1215 MHz. Gold metallization and emitter ballasting assure high reliability under Class C amplifier...
The TPR 700 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for...
TRANSISTOR-AVIONICS- 800W
Wireless Bipolar Power Transistors