Richardson RFPD Datasheets for Power Bipolar Transistors

Power bipolar transistors are semiconductors in which a base n-type or p-type layer is sandwiched between emitter and collector layers of the opposite type. The junctions between the semiconductor sections amplify weak incoming electrical signals.
Power Bipolar Transistors: Learn more

Product Name Notes
RF Power Transistor -- BUL54A Advanced distributed base design high voltage, high speed NPN, Silicon Power Transistor
RF Power Transistor -- PH1090-175L
RF Power Transistor -- PH1090-350L
RF Power Transistor -- PH1090-550S
Avionics Power Transistors
RF Power Transistor -- MRF3866R1 Designed for general-purpose RF amplifier applications, such as; pre-drivers, Oscillators, etc.
RF Power Transistor -- MRF448A Designed primarily for high voltage applications as a high power linear amplifiers from 2 to 30 MHz. Ideal for marine and base station equipment.
RF Power Transistor -- MRF545 Designed primarily for use in high frequency and medium and high resolution color video display monitors as well as other applications requiring high breakdown characteristics.
RF Power Transistor -- MRF455
RF Power Transistor -- MRF455MP
In the push-pull circuit configuration it is preferred that the transistors are used as matched pairs to obtain optimum performance. The matching procedure used by MACOM consists of measuring hFE...
RF Power Transistor -- PH2856-160 Linear Accelerator Power Transistors
RF Power Transistor -- PH1113-100
RF Power Transistor -- PH1214-110M
RF Power Transistor -- PH1214-12M
RF Power Transistor -- PH1214-220M
RF Power Transistor -- PH1214-25M
RF Power Transistor -- PH1214-2M
RF Power Transistor -- PH1214-55EL
RF Power Transistor -- PH1214-6M
RF Power Transistor -- PH1214-80M
RF Power Transistor -- PH2226-110M
RF Power Transistor -- PH2226-50M
RF Power Transistor -- PH2729-110M
RF Power Transistor -- PH2729-25M
RF Power Transistor -- PH2729-65M
RF Power Transistor -- PH2729-8.5M
RF Power Transistor -- PH2731-20M
RF Power Transistor -- PH2731-5M
RF Power Transistor -- PH2731-75L
RF Power Transistor -- PH2931-20M
RF Power Transistor -- PH3134-10M
RF Power Transistor -- PH3134-25M
RF Power Transistor -- PH3134-30S
RF Power Transistor -- PH3134-65M
RF Power Transistor -- PH3135-20M
RF Power Transistor -- PH3135-25S
RF Power Transistor -- PH3135-5M
RF Power Transistor -- PH3135-65M
RF Power Transistor -- PH3135-90S
Radar Power Transistors
RF Power Transistor -- MRF837T RF & Microwave Discrete Low Power Transistors. Designed primarily for wideband large signal stages in the 800 MHz and UF frequency ranges. Features:  •  Specified @ 12.5V, 870 MHz characteristics 
RF Power Transistor -- MRF837GT RF & Microwave Discrete Low Power Transistors. Designed primarily for wideband large signal stages in the 800 MHz and UHF frequency ranges. Features:  •  Specified @ 12.5V, 870 MHz characteristics 
RF Power Transistor -- 1214-110V
RF Power Transistor -- 1214-25V
RF Power Transistor -- 1214-300V
RF Power Transistor -- 1214-370V
RF Power Transistor -- 2N2857CSM
RF Power Transistor -- 2N5913
RF Power Transistor -- 2N6439
RF Power Transistor -- 2N6439/SD
RF Power Transistor -- 2N6439MP
RF Power Transistor -- 64054H
RF Power Transistor -- BFX85
RF Power Transistor -- MAPH-000066-FL0
RF Power Transistor -- MAPHST0049
RF Power Transistor -- MAPR-002729-170
RF Power Transistor -- MAPR-0912-500S0
RF Power Transistor -- MAPR-1090-350S0
RF Power Transistor -- MAPR-2729-170M
RF Power Transistor -- MAPRST0912-350
RF Power Transistor -- MAPRST0912-50
RF Power Transistor -- MAPRST1030-1KS
RF Power Transistor -- MATR-001214-XL4
RF Power Transistor -- MRF10005
RF Power Transistor -- MRF1000MB
RF Power Transistor -- MRF10031
RF Power Transistor -- MRF1004MB
RF Power Transistor -- MRF10120
RF Power Transistor -- MRF10120-1
RF Power Transistor -- MRF10150
RF Power Transistor -- MRF10350
RF Power Transistor -- MRF10502
RF Power Transistor -- MRF1090MB
RF Power Transistor -- MRF1150MB
RF Power Transistor -- MRF16006
RF Power Transistor -- MRF313
RF Power Transistor -- MRF314
RF Power Transistor -- MRF316
RF Power Transistor -- MRF317
RF Power Transistor -- MRF321
RF Power Transistor -- MRF323
RF Power Transistor -- MRF327
RF Power Transistor -- MRF392
RF Power Transistor -- MRF393
RF Power Transistor -- MRF421
RF Power Transistor -- MRF421MP
RF Power Transistor -- MRF422
RF Power Transistor -- MRF422MP
RF Power Transistor -- MRF426
RF Power Transistor -- MRF426MP
RF Power Transistor -- MRF428
RF Power Transistor -- MRF429
RF Power Transistor -- MRF429MP
RF Power Transistor -- MRF448
RF Power Transistor -- MRF448-QUAD
RF Power Transistor -- MRF448MP
RF Power Transistor -- MRF454
RF Power Transistor -- MRF454MP
RF Power Transistor -- MRF559LF
RF Power Transistor -- MS1004
RF Power Transistor -- MS1076BMP
RF Power Transistor -- MS1226MP
RF Power Transistor -- MS1227D
RF Power Transistor -- MS1406/2N5642
RF Power Transistor -- MS2209
RF Power Transistor -- MS2244S
RF Power Transistor -- MS2248
RF Power Transistor -- MS2279
RF Power Transistor -- MS2280A
RF Power Transistor -- MS2348A
RF Power Transistor -- MS2425
RF Power Transistor -- PH1090-15L
RF Power Transistor -- PH1090-700B
RF Power Transistor -- PH1090-75L
RF Power Transistor -- PH1214-100EL
RF Power Transistor -- PH1214-300M
RF Power Transistor -- PH1214-40M
RF Power Transistor -- PH2729-130M
RF Power Transistor -- SD1407
RF Power Transistor -- SD1460
RF Power Transistor -- SRF4116
Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the...
RF Power Transistor -- 1075MP The 1075MP is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization for proven highest MTTF.
RF Power Transistor -- 1214-370M The 1214-370M is an internally matched, COMMON BASE transistor capable of providing 370 Watts of pulsed RF output power at 330 microseconds pulse width, ten percent duty factor across the...
RF Power Transistor -- 1214-55 The 1214-55 is an internally matched, COMMON BASE transistor capable of providing 55 Watts of pulsed RF output power at two milliseconds pulse width, twenty percent duty factor across the...
RF Power Transistor -- 2001 The 2001 is a COMMON BASE transistor capable of providing 1 Watts Class C, RF output power at 2000 MHz. Gold Metallization and diffused ballasting are used to provide high...
RF Power Transistor -- DME800 The DME800 is a high power COMMON BASE bipolar transistor. It is designed for pulsed DME systems at 1025 to 1150 MHz, with the pulse width and duty required for...
RF Power Transistor -- MDS500L The MDS500L is a high power COMMON BASE bipolar transistor. It is designed for MODE-S ELM systems in the 1030 - 1090 MHz frequency band. The transistor includes input and...
RF Power Transistor -- MDS800 The MDS800 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems at 1090 MHz, with the pulse width and duty required for MODE-S applications. The...
RF Power Transistor -- MS1076B The MS1076 is a 28 volt epitaxial NPN silicon planar transistor designed primarily for SSB and VHF communications. This device utilizes an emitter ballasted die geometry for maximum ruggedness and...
RF Power Transistor -- MS2207 The MS2207 is a high power NPN bipolar transistor specifically designed for TCAS and Mode-S driver applications. This device is designed for operation under moderate pulse width and duty cycle...
RF Power Transistor -- MS2210 The MS2210 avionics power transistor is a broadband, high peak pulse power device specifically designed for avionics applications requiring broad bandwidth with moderate duty cycle and pulse width constraints such...
RF Power Transistor -- SD1275-01 The SD1275-01 is a 13.6 V Class C epitaxial Silicon NPN planar transistor designed primarily for VHF communications. The SD1275-01 utilizes an emitter ballasted die geometry to withstand severe load...
RF Power Transistor -- TAN250A The TAN 250A is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and...
RF Power Transistor -- TAN300 The TAN 300 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and...
RF Power Transistor -- TPR700 The TPR 700 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for...
RF Power Transistor -- PH1617-2 Wireless Bipolar Power Transistors