Richardson RFPD Datasheets for Power Bipolar Transistors
Power bipolar transistors are semiconductors in which a base n-type or p-type layer is sandwiched between emitter and collector layers of the opposite type. The junctions between the semiconductor sections amplify weak incoming electrical signals.
Power Bipolar Transistors: Learn more
| Product Name | Notes |
|---|---|
| Avionics Power Transistors | |
| AVIONICS-190W-TRANSI STOR | |
| AVIONICS-20W-TRANSIS TOR | |
| AVIONICS-70W-TRANSIS TOR | |
| Designed primarily for high voltage applications as a high power linear amplifiers from 2 to 30 MHz. Ideal for marine and base station equipment. | |
| In the push-pull circuit configuration it is preferred that the transistors are used as matched pairs to obtain optimum performance. The matching procedure used by MACOM consists of measuring hFE... | |
| Radar Power Transistors | |
| Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the... | |
| The MDS800 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems at 1090 MHz, with the pulse width and duty required for MODE-S applications. The... | |
| The MS2213 is a silicon NPN bipolar device specifically designed for JTIDS pulsed power applications from 960-1215 MHz. Gold metallization and emitter ballasting assure high reliability under Class C amplifier... | |
| The TPR 700 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for... | |
| TRANSISTOR-AVIONICS- 800W | |
| Wireless Bipolar Power Transistors |