Richardson RFPD Datasheets for Power Bipolar Transistors

Power bipolar transistors are semiconductors in which a base n-type or p-type layer is sandwiched between emitter and collector layers of the opposite type. The junctions between the semiconductor sections amplify weak incoming electrical signals.
Power Bipolar Transistors: Learn more

Product Name Notes
Advanced distributed base design high voltage, high speed NPN, Silicon Power Transistor
Avionics Power Transistors
Designed primarily for high voltage applications as a high power linear amplifiers from 2 to 30 MHz. Ideal for marine and base station equipment.
In the push-pull circuit configuration it is preferred that the transistors are used as matched pairs to obtain optimum performance. The matching procedure used by MACOM consists of measuring hFE...
Linear Accelerator Power Transistors
Radar Power Transistors
Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the...
The MS1076 is a 28 volt epitaxial NPN silicon planar transistor designed primarily for SSB and VHF communications. This device utilizes an emitter ballasted die geometry for maximum ruggedness and...
Wireless Bipolar Power Transistors