Richardson RFPD Datasheets for RF Transistors
RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors.
RF Transistors: Learn more
| Product Name | Notes |
|---|---|
| RF Power Transistor -- BUL54A | Advanced distributed base design high voltage, high speed NPN, Silicon Power Transistor |
| RF Power Transistor -- CG2H30070F | CG2H30070F is an internally matched gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H30070F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety... |
| RF Power Transistor -- CG2H40010F | CG2H40010F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40010F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of... |
| RF Power Transistor -- CG2H40010P | CG2H40010P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40010P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of... |
| RF Power Transistor -- CG2H40025F | CG2H40025F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40025F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of... |
| RF Power Transistor -- CG2H40025P | CG2H40025P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40025P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of... |
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RF Power Transistor -- CG2H40035F
RF Power Transistor -- CG2H40035P |
CG2H40035 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40035, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of... |
| RF Power Transistor -- CG2H40045F | CG2H40045F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40045F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of... |
| RF Power Transistor -- CG2H40045P | CG2H40045P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40045P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of... |
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RF Power Transistor -- CG2H40120F
RF Power Transistor -- CG2H40120P |
CG2H40120 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40120, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of... |
| RF Power Transistor -- CG2H80015D-GP4 | CG2H80015D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,... |
| RF Power Transistor -- AFT05MS003NT1 | Designed for handheld two-way radio applications with frequencies from 1.8 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large-signal, common-source amplifier... |
| RF Power Transistor -- AFM906NT1 | Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large-signal, common-source amplifier... |
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RF Power Transistor -- AFT05MS031GNR1
RF Power Transistor -- AFT05MS031NR1 |
Designed for mobile two--way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and broadband performance of these devices make them ideal for large--signal, common source... |
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RF Power Transistor -- AFT05MP075GNR1
RF Power Transistor -- AFT05MP075NR1 |
Designed for mobile two--way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and wideband performance of these devices make them ideal for large--signal, common source... |
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RF Power Transistor -- AFT09MS031GNR1
RF Power Transistor -- AFT09MS031NR1 |
Designed for mobile two--way radio applications with frequencies from 764 to 941 MHz. The high gain, ruggedness and broadband performance of these devices make them ideal for large--signal, common source... |
| RF Power Transistor -- 2731GN-400V | For S-band pulsed radar applications, with typically over 14dB gain, the 2731GN-400V is an internally matched, common source, class AB, GaN on SiC HEMT transistor capable of delivering more than... |
| RF Power Transistor -- AFT09MS007NT1 | High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET. Designed for handheld two--way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device makes... |
| RF Power Transistor -- AFT05MS006NT1 | High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET. Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make... |
| RF Power Transistor -- AFT09MS015NT1 | High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET. Designed for mobile two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make... |
| RF Power Transistor -- AFT21S230SR5 | HV9 2.1GHZ 230W NI780S-6 |
| RF Power Transistor -- AFT21S230SR3 | N--Channel Enhancement--Mode Lateral MOSFET. These 50 watt RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz. applications covering the... |
| RF Power Transistor -- AFT18S230SR3 | N--Channel Enhancement--Mode Lateral MOSFET. This 50 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz. |
| RF Power Transistor -- AFT20P060-4NR3 | N--Channel Enhancement--Mode Lateral MOSFET |
| RF Power Transistor -- AFT27S010NT1 | N-Channel Enhancement-Mode Lateral MOSFET. This 1.26 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz. |
| RF Power Transistor -- AFT20S015GNR1 | N-Channel Enhancement-Mode Lateral MOSFET. This 1.5 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 2700 MHz. |
| RF Power Transistor -- AFV09P350-04NR3 | N-Channel Enhancement-Mode Lateral MOSFET. This 100 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz. |
| RF Power Transistor -- AFT26P100-4WGSR | N-Channel Enhancement-Mode Lateral MOSFET. This 22 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range... |
| RF Power Transistor -- AFT20P140-4WNR3 | N-Channel Enhancement-Mode Lateral MOSFET. This 24 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range... |
| RF Power Transistor -- A2T26H160-24SR3 | N-Channel Enhancement-Mode Lateral MOSFET. This 28 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2496 to 2690 MHz. |
| RF Power Transistor -- AFT27S006NT1 | N-Channel Enhancement-Mode Lateral MOSFET. This 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz. |
| RF Power Transistor -- A2T07D160W04SR3 | N-Channel Enhancement-Mode Lateral MOSFET. This 30 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range... |
| RF Power Transistor -- AFT21S140W02GS3 | N-Channel Enhancement-Mode Lateral MOSFET. This 32 W RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110... |
| RF Power Transistor -- AFT23H2004S2LR6 | N-Channel Enhancement-Mode Lateral MOSFET. This 45 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2300 to 2400 MHz. |
| RF Power Transistor -- AFT26H200W03SR6 | N-Channel Enhancement-Mode Lateral MOSFET. This 45 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range... |
| RF Power Transistor -- AFT26H250-24SR6 | N-Channel Enhancement-Mode Lateral MOSFET. This 50W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of... |
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RF Power Transistor -- AFT21H350W03SR6
RF Power Transistor -- AFT21H350W04GSR |
N-Channel Enhancement-Mode Lateral MOSFET. This 63 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range... |
| RF Power Transistor -- AFT18P3504S2LR6 | N-Channel Enhancement-Mode Lateral MOSFET. This 63 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz. |
| RF Power Transistor -- AFT26H160-4S4R3 | RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET. This 32 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability... |
| RF Power Transistor -- AFT05MS004NT1 | RF Power LDMOS Transistor. Designed for handheld two--way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal... |
| RF Power Transistor -- AFT09MP055GNR1 | RF Power LDMOS Transistor. Designed for mobile two-way radio applications with frequencies from 764 to 941 MHz. The high gain, ruggedness and broadband performance of this devices make it ideal... |
| RF Power Transistor -- AFT18S230SR5 | RF Power LDMOS Transistor. N--Channel Enhancement--Mode Lateral MOSFET. This 50 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880... |
| RF Power Transistor -- AFV09P350-04GNR | RF Power LDMOS Transistor. This 100 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz |
| RF Power Transistor -- AFT20P1404WGNR3 | RF Power LDMOS Transistor. This 24 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range... |
| RF Power Transistor -- A2T07H310-24SR6 | RF Power LDMOS Transistor. This 47 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 716 to 960 MHz. |
| RF Power Transistor -- AFT21S230-12SR3 | RF Power LDMOS Transistor. This 50 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz. |
| RF Power Transistor -- AFT21S220W02SR3 | RF Power LDMOS Transistor. This 50 W RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110... |
| RF Power Transistor -- AFT21S240-12SR3 | RF Power LDMOS Transistor. This 55 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz. |
| RF Power Transistor -- AFT20P060-4GNR3 | RF Power LDMOS Transistor. This 6.3 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 2170 MHz. |
| RF Power Transistor -- AFT23S160W02SR3 | RF Power LDMOS Transistors N−Channel Enhancement−Mode Lateral MOSFETs. These 45 watt RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the... |
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RF Power Transistor -- AFT09H310-03SR6
RF Power Transistor -- AFT09H310-04GSR |
RF Power LDMOS Transistors. N−Channel Enhancement−Mode Lateral MOSFETs. These 56 watt asymmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 920... |
| RF Power Transistor -- ARF477FL | RF Power Mosfet. N-Channel Push - Pull Pair. The ARF477FL is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull... |
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RF Power Transistor -- 0912GN-100LV
RF Power Transistor -- 0912GN-120E RF Power Transistor -- 0912GN-120EL RF Power Transistor -- 0912GN-15E RF Power Transistor -- 0912GN-15EL RF Power Transistor -- 0912GN-50LE RF Power Transistor -- 0912GN-50LEL RF Power Transistor -- 1011GN-100V RF Power Transistor -- 1011GN-30E RF Power Transistor -- 1011GN-30EL RF Power Transistor -- 1014GN-100E RF Power Transistor -- 1014GN-100EL RF Power Transistor -- 1214GN-15E RF Power Transistor -- 1214GN-15EL RF Power Transistor -- 1214GN-50E RF Power Transistor -- 1214GN-50EL RF Power Transistor -- 1416GN-600V RF Power Transistor -- 2729GN-270V RF Power Transistor -- 2731GN-120V RF Power Transistor -- 2931-10MQGM RF Power Transistor -- 2N2857CSM RF Power Transistor -- 2N5913 RF Power Transistor -- 2N6439 RF Power Transistor -- 2N6439/SD RF Power Transistor -- 2N6439MP RF Power Transistor -- 3135GN-120V RF Power Transistor -- 3135GN-170 RF Power Transistor -- 3135GN-200V RF Power Transistor -- 4450GN-110V RF Power Transistor -- 5359GN-120V RF Power Transistor -- 64054H RF Power Transistor -- 64073 RF Power Transistor -- A2G26H280-04SR3 RF Power Transistor -- A2T18H455W23NR6 RF Power Transistor -- A2T18S165-12SR3 RF Power Transistor -- A2T18S260-12SR3 RF Power Transistor -- A2T21H450W19SR6 RF Power Transistor -- A2V07H400-04NR3 RF Power Transistor -- A2V09H400-04SR3 RF Power Transistor -- A2V09H525-04NR6 RF Power Transistor -- A3G26D055NT4 RF Power Transistor -- AFIC31025GNR1 RF Power Transistor -- AFM907NT1 RF Power Transistor -- AFT18H357-24SR6 RF Power Transistor -- AFT26HW050SR3 RF Power Transistor -- AFV141KGSR5 RF Power Transistor -- ARF449BG RF Power Transistor -- ARF468AG RF Power Transistor -- ARF468BG RF Power Transistor -- ARF469AG RF Power Transistor -- ARF469BG RF Power Transistor -- ARF479 RF Power Transistor -- BFX85 |
Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the... |
| RF Power Transistor -- 0405SC-1000M | The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR (SIT) capable of providing 1000 Watts of RF power from 406 to 450 MHz. The transistor... |
| RF Power Transistor -- 0405SC-1500M | The 0405SC-1500M is a Common Gate N-Channel DEPLETION MODE Class AB SILICON CARBIDE (SiC) STATIC INDUCTION TRANSISTOR (SIT) capable of providing 1500 Watts of RF power from 406 to 450... |
| RF Power Transistor -- 0510GN-25-CP | The 0510GN-25-CP is a COMMON SOURCE, class-AB, GaN on SiC HEMT transistor amplifier for 50MHz-1GHz broadband pulsed and CW RF power applications. The transistor is housed in a Ceramic SMT... |
| RF Power Transistor -- 0912GN-300V | The 0912GN-300V is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 19dB gain, 300 Watts of pulsed RF output power at 128us... |
| RF Power Transistor -- 0912GN-500LV | The 0912GN-500LV is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 16dB gain, 500 Watts of pulsed RF output power at 450μs... |
| RF Power Transistor -- 0912GN-650V | The 0912GN-650V is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 17dB gain, 650 Watts of pulsed RF output power at 128μs... |
| RF Power Transistor -- 1011GN-1000V | The 1011GN-1000V is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 19 dB gain, 1000 Watts of pulsed RF output power at... |
| RF Power Transistor -- 1011GN-1200V | The 1011GN-1200V is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 18.5 dB gain, 1200 Watts of pulsed RF output power at... |
| RF Power Transistor -- 1011GN-125E | The 1011GN-125E is an internally matched, common source, Class AB, GaN on SiC HEMT transmitter driver transistor capable of providing over 18.5 dB power gain and 125 W of pulsed... |
| RF Power Transistor -- 1011GN-125EL | The 1011GN-125EL is an internally matched, common source, Class AB, GaN on SiC HEMT transmitter driver transistor capable of providing over 18.5 dB power gain and 125 W of pulsed... |
| RF Power Transistor -- 1011GN-250EL | The 1011GN-250EL is an internally matched, common source, Class AB, GaN on SiC HEMT transistor/pallet amplifier capable of providing over 20.5 dB typical gain, 250 W of pulsed RF output... |
| RF Power Transistor -- 1011GN-800V | The 1011GN-800V is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 19 dB gain, 800 Watts of pulsed RF output power at... |
| RF Power Transistor -- 1012GN-1000V | The 1012GN-1000V is an internally matched, common-source, class-AB, GaN-on-SiC HEMT transistor capable of providing over 19 dB gain, 1000 W of pulsed RF output power at 32 μs, and 2%... |
| RF Power Transistor -- 1012GN-800V | The 1012GN-800V is an internally matched, COMMON SOURCE, class AB GaN on SiC high power transistor specifically designed for 20us, 6% duty cycle radar systems. It is capable of providing... |
| RF Power Transistor -- 1011GN-1600VG | The 1030/1090MHz, 50V or 52V 1011GN-1600VG is an internally matched, common source, class AB, GaN on SiC HEMT transistor capable of providing greater than 1600 Watts of pulsed output power... |
| RF Power Transistor -- 1214GN-120E | The 1214GN-120E is an internally matched, common source, Class AB, GaN on SiC HEMT transistor capable of providing over 17 dB typical power gain, 120 W of pulsed RF output... |
| RF Power Transistor -- 1214GN-120EL | The 1214GN-120EL is an internally matched, common source, Class AB, GaN on SiC HEMT transistor capable of providing over 17 dB typical power gain, 120 W of pulsed RF output... |
| RF Power Transistor -- 1214GN-180LV | The 1214GN-180LV is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 16.6dB gain, 180 Watts of pulsed RF output power at 3ms... |
| RF Power Transistor -- 1214GN-280LV | The 1214GN-280LV is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 15.5dB gain, 280 Watts of pulsed RF output power at 3ms... |
| RF Power Transistor -- 1214GN-400LV | The 1214GN-400LV is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 16dB gain, 400 Watts of pulsed RF output power at 4.5ms... |
| RF Power Transistor -- 1214GN-550V | The 1214GN-550V is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 17dB gain, 550 Watts of pulsed RF output power at 300us... |
| RF Power Transistor -- 1214GN-600VHE | The 1214GN-600VHE is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 16.9dB gain, 60% drain efficiency, 600 Watts of pulsed RF output... |
| RF Power Transistor -- 1214GN-650V | The 1214GN-650V is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 17dB gain, 650 Watts of pulsed RF output power at 150μs... |
| RF Power Transistor -- 1214GN-700V | The 1214GN-700V is an internally matched, common-source, class-AB GaN-on-SiC HEMT transistor capable of providing over 18 dB gain, 700 W of pulsed RF output power at 300 us pulse width,... |
| RF Power Transistor -- 1315GN-700V | The 1315GN-700V is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 17dB gain, 700 Watts of pulsed RF output power at 150μs... |
| RF Power Transistor -- 1416GN-120E | The 1416GN-120E is an internally matched, common source, Class AB, GaN on SiC HEMT transistor capable of providing over 17 dB typical power gain, 120 W of pulsed RF output... |
| RF Power Transistor -- 1416GN-120EL | The 1416GN-120EL is an internally matched, common source, Class AB, GaN on SiC HEMT transistor capable of providing over 17 dB typical power gain, 120 W of pulsed RF output... |
| RF Power Transistor -- 2729GN-150V | The 2729GN-150V is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 15.7dB gain, 150 Watts of pulsed RF output power across the... |
| RF Power Transistor -- 2729GN-270 | The 2729GN-270 is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 14dB gain, 280 Watts of pulsed RF output power at 100µs pulse width,... |
| RF Power Transistor -- 2729GN-500V | The 2729GN-500V is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 14.5 dB gain, 500 Watts of pulsed RF output power across... |
| RF Power Transistor -- 2731GN-280LV | The 2731GN-280LV is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 14.77 dB gain, 280 Watts of pulsed RF output power at... |
| RF Power Transistor -- 3135GN-280LV | The 3135GN-280LV is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 13 dB gain, 280 Watts of pulsed RF output power at... |
| RF Power Transistor -- 3135GN-400V | The 3135GN-400V is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT S-band transistor capable of providing over 400 Watts output power under 200 uS pulse width, 20%... |
| RF Power Transistor -- 3942GN-120V | The 3942GN-120V is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 14 dB gain, 120 Watts of pulsed RF output power at... |
| RF Power Transistor -- 5359GN-70V | The 5359GN-70V is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 10 dB gain, 70 Watts of pulsed RF output power at... |
| RF Power Transistor -- ARF1500 | The ARF1500 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz. |
| RF Power Transistor -- ARF1501 | The ARF1501 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz. |
| RF Power Transistor -- ARF1505 | The ARF1505 is an RF power transistor designed for off-line 300V operation in very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40... |
| RF Power Transistor -- ARF1510 | The ARF1510 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and... |
| RF Power Transistor -- ARF1511 | The ARF1511 is four RF power transistor arranged in an H-Bridge confi guration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator... |
| RF Power Transistor -- ARF1519G | The ARF1519 is an RF power transistor designed for very high power scienti fi c, commercial, medical and industrial RF power generator and amplifier applications up to 25 MHz. |
| RF Power Transistor -- ARF300 | The ARF300 is a N-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at... |
| RF Power Transistor -- ARF446G | The ARF446 comprise a symmetric pair of common source RF power transistor designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. |
| RF Power Transistor -- ARF447G | The ARF447 comprise a symmetric pair of common source RF power transistor designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. |
| RF Power Transistor -- ARF448AG | The ARF448A comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. |
| RF Power Transistor -- ARF449AG | The ARF449A comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 120 MHz. |
| RF Power Transistor -- ARF460AG | The ARF460A comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65MHz. They have been... |
| RF Power Transistor -- ARF460BG | The ARF460B comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65MHz. They have been... |
| RF Power Transistor -- ARF461AG | The ARF461A comprise a symmetric pair of common drain RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have... |
| RF Power Transistor -- ARF461BG | The ARF461B comprise a symmetric pair of common drain RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have... |
| RF Power Transistor -- ARF463AG | The ARF463AG comprises a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. It has... |
| RF Power Transistor -- ARF463AP1G | The ARF463AP1 comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 100MHz. They have been... |
| RF Power Transistor -- ARF463BG | The ARF463BG comprises a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. It has... |
| RF Power Transistor -- ARF463BP1G | The ARF463BP1 comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 100MHz. They have been... |
| RF Power Transistor -- ARF465AG | The ARF465A comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 60 MHz. |
| RF Power Transistor -- ARF465BG | The ARF465B comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 60 MHz. |
| RF Power Transistor -- ARF466AG | The ARF466A comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 45 MHz. They have... |
| RF Power Transistor -- ARF466BG | The ARF466B comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 45 MHz. They have... |
| RF Power Transistor -- ARF466FL | The ARF466FL is a rugged high voltage RF power transistor designed for scientific, commercial, medical and industrial RF power amplifier applications up to 45 MHz. It has been optimized for... |
| RF Power Transistor -- ARF475FL | The ARF475FL is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and... |
| RF Power Transistor -- ARF476FL | The ARF476FL is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and... |
| RF Power Transistor -- AFT20S015NR1 | These 1.5 watt RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 1805 to 2690 MHz. |
| RF Power Transistor -- AFT21S232SR3 | These 50 watt RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz. |
| RF Power Transistor -- AFT27S012NT1 | This 1.26 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz. |
| RF Power Transistor -- A3G18H500-04SR3 | This 107 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880... |
| RF Power Transistor -- A3V09H521-24SR6 | This 107 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz. |
| RF Power Transistor -- A3V07H600-42NR6 | This 112 W asymmetrical Doherty RF power LDMOS transistor is designedfor cellular base station applications covering the frequency range of 616 to870 MHz. |
| RF Power Transistor -- AFG24S100HR5 | This 125 W CW RF power transistor is optimized for wideband operation up to 2700 MHz and includes input matching for extended bandwidth performance. With its high gain and high... |
| RF Power Transistor -- A3G35H100-04SR3 | This 14 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 3400 to 3600... |
| RF Power Transistor -- A2T18H100-25SR3 | This 18 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1995 MHz. |
| RF Power Transistor -- A2T21H100-25SR3 | This 18 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz. |
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RF Power Transistor -- A2T08VD020NT1
RF Power Transistor -- A2T08VD021NT1 |
This 2 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 960 MHz. |
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RF Power Transistor -- A2T27S020GNR1
RF Power Transistor -- A2T27S020NR1 |
This 2.5 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 400 to 2700 MHz. |
| RF Power Transistor -- A2T18H160-24SR3 | This 28 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz. |
| RF Power Transistor -- A2T23H160-24SR3 | This 28 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2300 to 2400 MHz. |
| RF Power Transistor -- A2T20H160W04NR3 | This 28 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1880 to 2025... |
| RF Power Transistor -- AFT23H160-25SR3 | This 32 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2300 to 2400 MHz. |
| RF Power Transistor -- A2T26H165-24SR3 | This 32 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2496 to 2690 MHz. |
| RF Power Transistor -- A2G22S160-01SR3 | This 32 W RF power GaN transistor is designed for cellular base station applications covering the frequency range of 1800 to 2200 MHz. This part is characterized and performance is... |
| RF Power Transistor -- A2G35S160-01SR3 | This 32 W RF power GaN transistor is designed for cellular base station applications covering the frequency range of 3400 to 3600 MHz. This part is characterized and performance is... |
| RF Power Transistor -- A2T18S160W31GS3 | This 32 W RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1995 MHz. |
| RF Power Transistor -- A3G26H200W17SR3 | This 34 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690... |
| RF Power Transistor -- A2T21H140-24SR3 | This 36 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz. |
| RF Power Transistor -- A2T21H141W24SR3 | This 36 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 to 2200... |
| RF Power Transistor -- A2T21S160-12SR3 | This 38 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz. |
| RF Power Transistor -- A2T21S161W12SR3 | This 38 W RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 to 2200 MHz. |
| RF Power Transistor -- A2G35S200-01SR3 | This 40 W RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth covering the frequency range of 3400 to 3600 MHz. |
| RF Power Transistor -- A3G20S250-01SR3 | This 45 W RF power GaN transistor is designed for cellular base station applications covering the frequency range of 1800 to 2200 MHz. This part is characterized and performance is... |
| RF Power Transistor -- A2G22S251-01SR3 | This 48 W RF power GaN transistor is designed for cellular base station applications covering the frequency range of 1805 to 2200 MHz. This part is characterized and performance is... |
| RF Power Transistor -- A2G26H281-04SR3 | This 50 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690... |
| RF Power Transistor -- AFT18S230-12NR3 | This 50 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz. |
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RF Power Transistor -- AFT18S260W31GS3
RF Power Transistor -- AFT18S260W31SR3 |
This 50 W RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1995 MHz. |
| RF Power Transistor -- A2T23H200W23SR6 | This 51 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2300 to 2400... |
| RF Power Transistor -- AFT09S220-02NR3 | This 54 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 850 to 960 MHz. |
| RF Power Transistor -- A3G26H501W17SR3 | This 56 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690... |
| RF Power Transistor -- A3T18H408W24SR3 | This 56 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880... |
| RF Power Transistor -- A3T21H360W23SR6 | This 56 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 to 2200... |
| RF Power Transistor -- A2T18S262W12NR3 | This 56 W RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880 MHz. |
| RF Power Transistor -- A2T21S260W12NR3 | This 56 W RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 to 2200 MHz. |
| RF Power Transistor -- A2T20H330W24SR6 | This 58 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1880 to 2025... |
| RF Power Transistor -- A3G20S350-01SR3 | This 59 W RF power GaN transistor is designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz. This part is characterized and performance is... |
| RF Power Transistor -- A2T26H300-24SR6 | This 60 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2496 to 2690 MHz. |
| RF Power Transistor -- AFT18H357-24NR6 | This 63 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz. |
| RF Power Transistor -- AFT18H356-24SR6 | This 63 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1995 MHz. |
| RF Power Transistor -- A2T21H360-24SR6 | This 63 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz. |
| RF Power Transistor -- A2T21H360-23NR6 | This 63 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2110 to 2200 MHz. |
| RF Power Transistor -- A3T18H360W23SR6 | This 63 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880... |
| RF Power Transistor -- A3T23H300W23SR6 | This 63 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2300 to 2400... |
| RF Power Transistor -- AFT18S290-13SR3 | This 63 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1995 MHz. |
| RF Power Transistor -- A2T21S260-12SR3 | This 65 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz. |
| RF Power Transistor -- A2T09VD250NR1 | This 65 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 716 to 960 MHz. |
| RF Power Transistor -- A2T23H300-24SR6 | This 66 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2300 to 2400 MHz. |
| RF Power Transistor -- A2T18H410-24SR6 | This 71 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz. |
| RF Power Transistor -- A3T18H400W23SR6 | This 71 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880... |
| RF Power Transistor -- A2T21H410-24SR6 | This 72 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz. |
| RF Power Transistor -- A3G22H400-04SR3 | This 79 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring wide instantaneous bandwidth capability covering the frequency range of 1800 to 2200 MHz. |
| RF Power Transistor -- A2V09H300-04NR3 | This 79 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz. |
| RF Power Transistor -- A2T09VD300NR1 | This 79 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 716 to 960 MHz. |
| RF Power Transistor -- AFT09S282NR3 | This 80 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz. |
| RF Power Transistor -- A3T19H455W23SR6 | This 81 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1930 to 1990... |
| RF Power Transistor -- A3T18H455W23SR6 | This 87 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880... |
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RF Power Transistor -- A3T21H450W23SR6
RF Power Transistor -- A3T21H455W23SR6 RF Power Transistor -- A3T21H456W23SR6 |
This 87 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 to 2200... |
| RF Power Transistor -- A2T18H450W19SR6 | This 89 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880... |
| RF Power Transistor -- A2T09D400-23NR6 | This 93 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 716 to 960 MHz. |
| RF Power Transistor -- A2T14H450-23NR6 | This 93W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1452 to 1511 MHz. |
| RF Power Transistor -- AFV141KHR5 | This RF power device is designed for commercial applications operating at frequencies from 1200 to 1400 MHz such as commercial L-Band radars. The device is suitable for use in pulse... |
| RF Power Transistor -- AFT31150NR5 | This RF power transistor is designed for applications operating at frequencies between 2700 and 3100 MHz. This device is suitable for use in pulse applications. |
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RF Power Transistor -- AFV10700GSR5
RF Power Transistor -- AFV10700HR5 RF Power Transistor -- AFV10700HSR5 |
This RF power transistor is designed for pulse applications operating at 1030 to 1090 MHz and can be used over the 960 to 1215 MHz band at reduced power. This... |
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RF Power Transistor -- AFV121KGSR5
RF Power Transistor -- AFV121KHR5 RF Power Transistor -- AFV121KHSR5 |
This RF power transistor is designed for pulse applications operating at frequencies from 960 to 1215 MHz, such as distance measuring equipment (DME), secondary radars and high power transponders for... |
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