Richardson RFPD Datasheets for RF Transistors
RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors.
RF Transistors: Learn more
Product Name | Notes |
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40W, 16dB gain @ 175MHz. General purpose RF power MOSFET | |
Avionics Power Transistors | |
Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology | |
Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology | |
CG2H40035 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40035, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of... | |
CG2H80015D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,... | |
CG2H80045D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,... | |
CG2H80120D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,... | |
CGH21240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH21240F ideal for 1.8-2.3GHz WCDMA... | |
CGH25120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH25120F ideal for 2.3-2.7GHz WiMAX,... | |
CGH27015P is a gallium nitride (GaN) high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for VHF, Comms, 3G,... | |
CGH27030F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030F ideal for VHF, Comms,... | |
CGH27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030S ideal for LTE,... | |
CGH31240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH31240F ideal for 2.7-3.1GHz S-Band... | |
CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of... | |
CGH40090PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40090PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of... | |
CGH40120F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of... | |
CGH40180PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40180PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of... | |
CGH60008D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,... | |
CGHV1F006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L,... | |
CGHV1J025D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 um gate length fabrication process. This GaN-on-SiC product offers... | |
CGHV40180F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40180F, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of... | |
CGHV40180P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40180P, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of... | |
CGHV40320D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,... | |
CGHV50200F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV50200F ideal for troposcatter communications,... | |
CGHV59350F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV59350F ideal for 5.2 -... | |
CGHV96050F1 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to... | |
Cree’s CGHV35120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35120F ideal for 3.1... | |
Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM... | |
Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as a driver or output amplifier in push-pull configurations. Can be used in manual gain... | |
Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid... | |
Designed for CDMA base station applications with frequencies from 2010 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base station modulations. | |
Designed for CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications. To be used in Class AB and Class C... | |
Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. | |
Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large-signal, common-source amplifier... | |
Designed for mobile two--way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and broadband performance of these devices make them ideal for large--signal, common source... | |
Designed for wideband large-signal amplifier and oscillator applications to 500 MHz. | |
Designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range, in single ended configuration. | |
Designed primarily for linear large-signal output stages in the 2.0-100 MHz frequency range. | |
Designed primarily for linear large-signal output stages to 80 MHz. | |
Designed primarily for wideband large-signal output and driver stages from 100 - 500 MHz. | |
Disclaimer: Please note this is pre-release and the part is subject to change This 13.8 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring... | |
Disclaimer: Please note this is pre-release and the part is subject to change This 5.4 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring... | |
Gallium Nitride 28V, 25W RF Power Transistor. Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology | |
GTVA107001EC is a 700-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 960 to 1215 MHz frequency band. It features input matching, high efficiency, and thermally-enhanced... | |
High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET. Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make... | |
LDMOS RF Power Transistors; advanced high performance in-package Doherty configuration. N-Channel Enhancement-Mode Lateral MOSFETs. Designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can... | |
MMRF1312HSR5 is designed for pulse applications operating at frequencies from 900 to 1215 MHz. The device is suitable for use in pulse applications with large duty cycles and long pulses... | |
N--Channel Enhancement--Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 1.8 and 600 MHz. These devices are suitable for use in high VSWR industrial, broadcast and... | |
N-Channel Enhancement-Mode Lateral MOSFET. This 100 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz. The... | |
N-Channel Enhancement-Mode Lateral MOSFET. This 63 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz. | |
N-Channel Enhancement-Mode Lateral MOSFETs. Designed for CDMA and multi-carrier base station applications with frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for all... | |
N-Channel Enhancement-Mode Lateral MOSFETs. Designed for Class A or Class AB general purpose applications with frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation and multipurpose amplifier... | |
Radar Power Transistors | |
RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET. Designed primarily for pulsed wideband applications with frequencies up to 150 MHz. Device is unmatched and is suitable for use in... | |
RF Power Field Effect Transistor, N-Channel Enhancement-Mode Lateral MOSFET. Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class... | |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs. Designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB... | |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs. RF Power transistors designed for applications operating at frequencies between 1200 and 1400 MHz, 1% to 12% duty cycle. These devices... | |
RF Power Field Effect Transistors. High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs. These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog... | |
RF Power Field Effect Transistors. N--Channel Enhancement--Mode Lateral MOSFETs. Designed for CDMA base station applications with frequencies from 790 to 895 MHz. Can be used in Class AB and Class... | |
RF Power Field Effect Transistors. N--Channel Enhancement--Mode Lateral MOSFETs. Designed for W--CDMA and LTE base station applications with frequencies from 790 to 820 MHz. Can be used in Class AB... | |
RF Power Field Effect Transistors. N-Channel Enhancement - Mode Lateral MOSFETs. Designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in... | |
RF Power Field Effect Transistors. N-Channel Enhancement-Mode Lateral MOSFETs. Designed for base station applications with wide instantaneous bandwidth requirements covering frequencies from 2300 to 2400 MHz. | |
RF Power Field Effect Transistors. N-Channel Enhancement-Mode Lateral MOSFETs. Designed for broadband commercial and industrial applications with frequencies from 1930 to 1990 MHz. The high gain and broadband performance of... | |
RF Power Field Effect Transistors. N-Channel Enhancement-Mode Lateral MOSFETs. Designed for W-CDMA and LTE base station applications with frequencies from 2500 to 2700 MHz. Can be used in Class AB... | |
RF Power Field Effect Transistors. N-Channel Enhancement-Mode Lateral MOSFETs. Designed primarily for CW large-signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable... | |
RF Power Field Effect Transistors; N-Channel Enhancement-Mode Lateral MOSFETs. RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in... | |
RF Power LDMOS Transistor. This 47 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 716 to 960 MHz. | |
RF Power LDMOS Transistor. This 6.3 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 2170 MHz. | |
RF Power LDMOS Transistor. This high ruggedness device is designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. | |
RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to 2000 MHz. This device is fabricated using Freescale.s enhanced ruggedness... | |
RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed applications. | |
RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to 2000 MHz. These devices are fabricated using Freescale’s enhanced ruggedness... | |
RF Power Vertical MOSFET. The VRF161 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,... | |
RF Power Vertical MOSFET. The VRF161MP is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,... | |
Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the... | |
The 0912GN-250V is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 18dB gain, 250 Watts of pulsed RF output power at 128... | |
The 0912GN-300V is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 19dB gain, 300 Watts of pulsed RF output power at 128us... | |
The 0912GN-650V is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 17dB gain, 650 Watts of pulsed RF output power at 128μs... | |
The 1012GN-800V is an internally matched, COMMON SOURCE, class AB GaN on SiC high power transistor specifically designed for 20us, 6% duty cycle radar systems. It is capable of providing... | |
The 1214GN-400LV is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 16dB gain, 400 Watts of pulsed RF output power at 4.5ms... | |
The ARF1510 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and... | |
The ARF446 comprise a symmetric pair of common source RF power transistor designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. | |
The ARF447 comprise a symmetric pair of common source RF power transistor designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. | |
The ARF449A comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 120 MHz. | |
The ARF460A comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65MHz. They have been... | |
The ARF460B comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65MHz. They have been... | |
The ARF466FL is a rugged high voltage RF power transistor designed for scientific, commercial, medical and industrial RF power amplifier applications up to 45 MHz. It has been optimized for... | |
The DC35-15-D3 is an unmatched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 18dB gain, 15 Watts of RF output power across the 30-3500 MHz... | |
The DRF1200 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and Non-Inverting. It was designed to provide the system... | |
The DRF1201 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and Non-Inverting. It was designed to provide the system... | |
The DRF1300 is a push-pull hybrid containing two high power gate drivers and two power MOSFETs. It was designed to provide the system designer increased flexibility, higher performance, and lowered... | |
The GTRA184602FC is a 460-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a... | |
The GTRA362002FC is a 200-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and... | |
The GTRA364002FC is a 400-watt (PSAT) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and... | |
The GTVA101K42EV is a 1400-watt GaN on SiC high electron mobility transistor (HEMT) for use in avionics transponder applications. It is a input matched, highefficiency device in a thermally-enhanced package... | |
The GTVA261701FA is a 170-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a... | |
The GTVA263202FC is a 340-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a... | |
The MAGB-103340-015B0P is a wideband GaN HEMT D-mode amplifier designed for base station applications and optimized for 3.3 - 4.0 GHz modulated signal operation. This device supports pulsed and linear... | |
The MAGX-100027-002S0P is a GaN on Si HEMT D-mode transistor suitable for DC - 2.7 GHz frequency operation. The device supports both CW and pulsed operation with peak output power... | |
The MAGX-100027-100CTP is high power GaN on Si HEMT device optimized for DC - 2.7 GHz frequency operation. The device supports both CW and pulsed operation with peak output power... | |
The MAGX-100027-300CTP is high power GaN on Si HEMT device optimized for DC - 2.7 GHz frequency operation. The device supports both CW and pulsed operation with peak output power... | |
The MRFX1K80H is based on NXP’s Xtra High Voltage LDMOS technology, designed for drain voltages up to 65V. This technology enables; fewer transistors to combine in high power systems, ease... | |
The NE5500479A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for cellular handsets. Dies are manufactured using our NEWMOS technology (our 0.6 μm WSi... | |
The NEM090603M-28 is an N-channel enhancement-mode lateral diffused MOS FET designed for driver or final stage in 0.8 to 1.0 GHz PA, such as, analog/digital TV-transmitter and GSM/EDGE/D-AMPS/PDC cellular base... | |
The NEM090853P-28 is an N-channel enhancement-mode lateral MOS FET designed for 0.8 to 1.0 GHz, 90 W single-end power amplifier applications, such as, GSM/EDGE/N-CDMA cellular base station. Dies are manufactured... | |
The NPT1015 GaN HEMT is a wideband transistor optimized for DC-2.5 GHz operation. This device is designed for CW, pulsed, and linear operation with output power levels to 50W (47... | |
The NPT2018 GaN HEMT is a wideband transistor optimized for DC-2.5 GHz operation. This device has been designed for CW, pulsed, and linear operation with output power levels to 12W... | |
The NPTB00004A GaN HEMT is a wideband transistor optimized for DC-6 GHz operation. This device has been designed for CW, pulsed, and linear operation with output power levels to 5W... | |
The PD57030 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. PD57030 is designed for high gain, broad band commercial and industrial applications. PD57030 operates at 28 V... | |
The PTFC262157FH LDMOS FET is designed for use in Doherty cellular power applications in the 2620 MHz to 2690 MHz frequency band. Input and output matching have been optimized for... | |
The PTFC270051M is an unmatched 5-watt LDMOS FET suitable for power amplifier applications with frequencies from 900 MHz to 2700 MHz. This LDMOS transistor offers excellent gain, efficiency and linearity... | |
The PTRA084808NF is a 550-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 734 to 821 MHz frequency band. Features include input matching, high gain... | |
The PTRA087008NB is a 650-watt LDMOS FET. It is designed for use in multi-standard cellular power amplifier applications from 755 MHz to 805 MHz. Manufactured with Wolfspeed's advanced LDMOS process,... | |
The PTRA093818NF is a 415-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 925 to 960 MHz frequency band. Features include input matching, high gain... | |
The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down... | |
The PTVA082407NF is a 240-watt LDMOS FET manufactured with Wolfspeed's 48-V LDMOS process. It is designed for use in multi-standard cellular power amplifier applications. It features a single ended design... | |
The PTVA092407NF is a 240-watt LDMOS FET manufactured with Wolfspeed's 48-V LDMOS process. It is designed for use in multi-standard cellular power amplifier applications. It features a single ended design... | |
The PTVA102001EA is a 200-watt LDMOS FET intended for use in power amplifier applications in the 960 to 1600 MHz frequency band. Features include high gain and thermally-enhanced package with... | |
The PTVA120251EA LDMOS FET is designed for use in power amplifier applications in the 500 MHz to 1400 MHz frequency band. Features include high gain and a thermally-enhanced package with... | |
The PTVA123501FC LDMOS FET is designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally enhanced package with... | |
The PTVA127002EV LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. | |
The PXAC182908FV is a 240-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include... | |
The PXAC241702FC is a 28 V LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2300 to 2400 MHz frequency band. Features... | |
The PXAC243502FV LDMOS FET is a 350-watt LDMOS FET designed for use in power amplifier applications in the 2300 MHz to 2400 MHz frequency band. Features include an asymmetric design... | |
The PXAC261212FC is a 120-watt LDMOS FET with an asymmetric designed for use in multi-standard cellular power amplifier applications in the 2496 to 2690 MHz frequency band. It features dual-path... | |
The PXAD184218FV is a 420-watt (P3dB) LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features... | |
The PXAE183708NB is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching,... | |
The PXFC192207FH is a 220-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band. Features include input and output matching,... | |
The PXFE211507FC is a 170-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features include input and output matching,... | |
The SD2932 is a gold metalized N-channel MOS field-effect RF power transistor, intended for use in 50 V dc large signal applications up to 250 MHz. | |
The SD4933MR is an N-channel MOS field-effect RF power transistor. It is intended for use in 50 V ISM applications up to 100 MHz. The SD4933MR benefits from the latest... | |
The SD57045 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57045 is designed... | |
The TA9210D is a broadband capable 12.5W GaN on Silicon power transistor covering 30MHz to 2.7GHz frequency band with a single match. TA9210D is usable upto 4GHz. The input and... | |
The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion. | |
The VRF2944 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion. | |
The WSGPA01 is a GaN on SiC Discrete General Purpose Amplifier (GPA) designed for applications up to 5 GHz. The device operates from supply voltages up to 50 V and... | |
These 1.5 watt RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 1805 to 2690 MHz. | |
This 13.5 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 3600 to 3800... | |
This 1300 W RF power transistor is designed for applications operating at frequencies between 1020 and 1100 MHz. This device is suitable for use in defense and commercial pulse applications,... | |
This 15 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690... | |
This 18 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 3300 to 3700... | |
This 2 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 960 MHz. | |
This 50 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690... | |
This 50 W asymmetrical Doherty RF power LDMOS transistor is optimized for instantaneous signal bandwidth capabilities covering the frequency range of 2496 to 2690 MHz. This part is ideally suited... | |
This 56 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690... | |
This 8.8 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2300 to 2400... | |
This 93 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 716 to 960 MHz. | |
This device is designed for use in VHF/UHF communications, VHF TV broadcast and aerospace applications as well as industrial, scientific and medical applications. The device is exceptionally rugged and exhibits... | |
This high ruggedness device is designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. It's unmatched input and... | |
This high ruggedness device is designed for use in high VSWR industrial, medical, broadcast, aerospace and mobile radio applications. It's unmatched input and output design allows for wide frequency range... | |
This high ruggedness device is designed for use in high VSWR industrial, medical, broadcast, aerospace and mobile radio applications. It's unmatched input and output design supports frequency use from 1.8... | |
This high ruggedness device is designed for use in high VSWR industrial, medical, broadcast, aerospace, and mobile radio applications. It's unmatched input and output design allows for wide frequency range... | |
This high ruggedness device, MRF1K50NR5, is designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub-GHz aerospace and mobile radio... | |
This MHTG1200HS 300 W GaN transistor is designed for industrial, scientific and medical (ISM) applications at 2450 MHz. This device is suitable for use in CW, pulse, cycling and linear... | |
This RF power device is designed for pulse applications operating at frequencies from 1200 to 1400 MHz. The device is suitable for use in pulse applications and is ideal for... | |
This RF power transistor is designed for applications operating at frequencies between 960 and 1215 MHz such as distance measuring equipment (DME), transponders and secondary radars for air traffic control. | |
This RF power transistor is designed for pulse applications operating at 1030 to 1090 MHz and can be used over the 960 to 1215 MHz band at reduced power. This... | |
This RF power transistor is designed for pulse applications operating at frequencies from 960 to 1215 MHz, such as distance measuring equipment (DME), secondary radars and high power transponders for... | |
With Littelfuse’s August 2021 notification that they have transitioned their IXFH6N100F to an end of life status, consider Microchip’s ARF461AG/BG as a direct cross and option to continue your existing... |
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