Richardson RFPD Datasheets for RF Transistors

RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors.
RF Transistors: Learn more

Product Name	Notes
RF Power Transistor -- CHZ180A-SEB	180W L-Band HPA. GaN HEMT on SiC in SEB Package. The CHZ180A-SEB is an input matched and output pre-matched packaged Gallium Nitride High Electron Mobility Transistor. It allows broadband solutions...
RF Power Transistor -- D2219UK	2½W, 10dB gain @ 1GHz. Excellent surface-mount part for hand-held applications.
RF Power Transistor -- D1028UK	300W, 13dB gain @175MHz. The leading MOSFET for high linearity transmitters.
RF Power Transistor -- D1002UK	40W, 16dB gain @ 175MHz. General purpose RF power MOSFET
RF Power Transistor -- PH1090-175L RF Power Transistor -- PH1090-350L RF Power Transistor -- PH1090-550S	Avionics Power Transistors
RF Power Transistor -- NPT25100B RF Power Transistor -- NPT25100P	Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology
RF Power Transistor -- MRFE6S9060NR1	Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common-source amplifier applications...
RF Power Transistor -- MRF141 RF Power Transistor -- MRF141G RF Power Transistor -- MRF151A	Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM...
RF Power Transistor -- MRF173	Designed for broadband commercial and military applications up to 200 MHz frequency range. The high-power, high-gain and broadband performance of this device make possible solid state transmitters for FM broadcast...
RF Power Transistor -- MRF173CQ	Designed for broadband commercial and military applications up to 200 MHz frequency range. The high-power, high-gain and broadband performance of this device makes possible solid state transmitters for FM broadcast...
RF Power Transistor -- MRF177	Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as a driver or output amplifier in push-pull configurations. Can be used in manual gain...
RF Power Transistor -- MRF175GU RF Power Transistor -- MRF175GV RF Power Transistor -- MRF176GU RF Power Transistor -- MRF176GV	Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid...
RF Power Transistor -- MRF175LU	Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz frequency range. The high power, high gain and broadband performance of each device makes...
RF Power Transistor -- MRF275L	Designed for broadband commercial and military applications using single ended circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of this device makes possible solid...
RF Power Transistor -- MW6S004NT1	Designed for Class A or Class AB base station applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications.
RF Power Transistor -- MMRF1014NT1	Designed for Class A or Class AB power amplifier applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications.
RF Power Transistor -- AFM906NT1	Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large-signal, common-source amplifier...
RF Power Transistor -- AFT05MS031GNR1 RF Power Transistor -- AFT05MS031NR1	Designed for mobile two--way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and broadband performance of these devices make them ideal for large--signal, common source...
RF Power Transistor -- AFT09MS031GNR1 RF Power Transistor -- AFT09MS031NR1	Designed for mobile two--way radio applications with frequencies from 764 to 941 MHz. The high gain, ruggedness and broadband performance of these devices make them ideal for large--signal, common source...
RF Power Transistor -- MRF148A	Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz.
RF Power Transistor -- MRF158	Designed for wideband large-signal amplifier and oscillator applications to 500 MHz.
RF Power Transistor -- MRF136Y	Designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push-pull configuration.
RF Power Transistor -- MRF136	Designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range, in single ended configuration.
RF Power Transistor -- MRF134	Designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range.
RF Power Transistor -- MRF137	Designed for wideband large-signal output and driver stages up to 400 MHz range.
RF Power Transistor -- MRF448A	Designed primarily for high voltage applications as a high power linear amplifiers from 2 to 30 MHz. Ideal for marine and base station equipment.
RF Power Transistor -- MRF154	Designed primarily for linear large-signal output stages in the 2.0-100 MHz frequency range.
RF Power Transistor -- MRF157	Designed primarily for linear large-signal output stages to 80 MHz.
RF Power Transistor -- MRF140	Designed primarily for linear large-signal output stages up to 150 MHz frequency range.
RF Power Transistor -- MRF150	Designed primarily for linear large-signal output stages up to150 MHz frequency range.
RF Power Transistor -- MRF160 RF Power Transistor -- MRF166C	Designed primarily for wideband large-signal output and driver from 30-500 MHz.
RF Power Transistor -- MRF275G	Designed primarily for wideband large-signal output and driver stages from 100 - 500 MHz.
RF Power Transistor -- MRF171A	Designed primarily for wideband large-signal output and driver stages from 30-200 MHz
RF Power Transistor -- MRF166W	Designed primarily for wideband large-signal output and driver stages to 30 - 500 MHz.
RF Power Transistor -- MRF174	Designed primarily for wideband large-signal output and driver stages up to 200 MHz frequency range.
RF Power Transistor -- NPT25015D	Gallium Nitride 28V, 23W RF Power Transistor. Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology
RF Power Transistor -- NPT1004D	Gallium Nitride 28V, 45W RF Power Transistor. Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology
RF Power Transistor -- MAGX-011086	GaN Wideband Transistor 28 V, 4 W. The MAGX-011086 GaN HEMT is a wideband transistor optimized for DC - 6 GHz operation in a user friendly package ideal for high...
RF Power Transistor -- D2216UK	Gold metallized multi-purpose silicon DMOS RF FET 15W 12.5V 500 MHz push-pull
RF Power Transistor -- AFT09MS007NT1	High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET. Designed for handheld two--way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device makes...
RF Power Transistor -- MMRF1305HSR5	High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET. RF power transistor suitable for both narrowband and broadband CW or pulse applications operating at frequencies from 1.8 to 2000 MHz, such as military...
RF Power Transistor -- MMRF1306HR5	High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET. This high ruggedness device is designed for use in high VSWR CW or pulse applications, such as HF, VHF, and low-band UHF radar and...
RF Power Transistor -- MRFE6VP61K25HR5	High Ruggedness N-Channel. Enhancement-Mode Lateral MOSFETs. These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land...
RF Power Transistor -- MRF455	In the push-pull circuit configuration it is preferred that the transistors are used as matched pairs to obtain optimum performance. The matching procedure used by MACOM consists of measuring hFE...
RF Power Transistor -- MMRF1312GSR5	MMRF1312GSR5 is designed for pulse applications operating at frequencies from 900 to 1215 MHz. The device is suitable for use in pulse applications with large duty cycles and long pulses...
RF Power Transistor -- MMRF1312HR5	MMRF1312HR5 is designed for pulse applications operating at frequencies from 900 to 1215 MHz. The device is suitable for use in pulse applications with large duty cycles and long pulses...
RF Power Transistor -- MMRF1312HSR5	MMRF1312HSR5 is designed for pulse applications operating at frequencies from 900 to 1215 MHz. The device is suitable for use in pulse applications with large duty cycles and long pulses...
RF Power Transistor -- MRFE6VP6300HSR5	N--Channel Enhancement--Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 1.8 and 600 MHz. These devices are suitable for use in high VSWR industrial, broadcast and...
RF Power Transistor -- AFT20S015GNR1	N-Channel Enhancement-Mode Lateral MOSFET. This 1.5 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 2700 MHz.
RF Power Transistor -- MMRF1020-04GNR3	N-Channel Enhancement-Mode Lateral MOSFET. This 100 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz. The...
RF Power Transistor -- AFV09P350-04NR3	N-Channel Enhancement-Mode Lateral MOSFET. This 100 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz.
RF Power Transistor -- AFT27S006NT1	N-Channel Enhancement-Mode Lateral MOSFET. This 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.
RF Power Transistor -- MMRF1004GNR1	N-Channel Enhancement-Mode Lateral MOSFETs. Designed for Class A or Class AB general purpose applications with frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation and multipurpose amplifier...
RF Power Transistor -- MMRF1007HSR5 RF Power Transistor -- MMRF1008HR5	N-Channel Enhancement-Mode Lateral MOSFETs. RF power transistors designed for applications operating at frequencies from 900 to 1215 MHz. These devices are suitable for use in defense and commercial pulse applications,...
RF Power Transistor -- DMD1028	New Product! BeO-free package, only 0.2 0C/W thermal resistance. 300W, 16dB gain @ 175MHz
RF Power Transistor -- PH1214-110M RF Power Transistor -- PH1214-12M RF Power Transistor -- PH1214-220M RF Power Transistor -- PH1214-25M RF Power Transistor -- PH1214-2M RF Power Transistor -- PH1214-55EL RF Power Transistor -- PH1214-6M RF Power Transistor -- PH1214-80M RF Power Transistor -- PH2226-110M RF Power Transistor -- PH2226-50M RF Power Transistor -- PH2729-110M RF Power Transistor -- PH2729-25M RF Power Transistor -- PH2729-65M RF Power Transistor -- PH2729-8.5M RF Power Transistor -- PH2731-20M RF Power Transistor -- PH2731-5M RF Power Transistor -- PH2731-75L RF Power Transistor -- PH3134-10M RF Power Transistor -- PH3135-20M RF Power Transistor -- PH3135-25S RF Power Transistor -- PH3135-5M RF Power Transistor -- PH3135-65M RF Power Transistor -- PH3135-90S	Radar Power Transistors
RF Power Transistor -- DRF1400	RF MOSFET performance can be severely limited by the driver selection. The DRF1400A and B are half bridge hybrids with symmetrically orientated leads so that the two can easily be...
RF Power Transistor -- MRF6V10010NR4	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET. RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device...
RF Power Transistor -- MRF6V14300HR5 RF Power Transistor -- MRF6V14300HSR5	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs. RF Power transistors designed for applications operating at frequencies between 1200 and 1400 MHz, 1% to 12% duty cycle. These devices...
RF Power Transistor -- MRF6V12500HR5 RF Power Transistor -- MRF6V12500HSR5	RF Power Field Effect Transistors; N-Channel Enhancement-Mode Lateral MOSFETs. RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in...
RF Power Transistor -- AFT05MS004NT1	RF Power LDMOS Transistor. Designed for handheld two--way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal...
RF Power Transistor -- AFV09P350-04GNR3	RF Power LDMOS Transistor. This 100 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz
RF Power Transistor -- ARF477FL	RF Power Mosfet. N-Channel Push - Pull Pair. The ARF477FL is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull...
RF Power Transistor -- MRFE6VS25LR5	RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to 2000 MHz. This device is fabricated using Freescale.s enhanced ruggedness...
RF Power Transistor -- MRF6V12250HR5 RF Power Transistor -- MRF6V12250HSR5 RF Power Transistor -- MRF6VP121KHR5	RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed applications.
RF Power Transistor -- VRF141MP	RF Power Vertical MOSFET. The VRF141 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,...
RF Power Transistor -- VRF148MP	RF Power Vertical MOSFET. The VRF148A is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,...
RF Power Transistor -- VRF150MP	RF Power Vertical MOSFET. The VRF150 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,...
RF Power Transistor -- VRF151MP	RF Power Vertical MOSFET. The VRF151 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,...
RF Power Transistor -- VRF152MP	RF Power Vertical MOSFET. The VRF152 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,...
RF Power Transistor -- VRF152	RF Power Vertical Mosfet. The VRF152 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness.
RF Power Transistor -- VRF154FLMP	RF Power Vertical MOSFET. The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,...
RF Power Transistor -- VRF157FLMP	RF Power Vertical MOSFET. The VRF157FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,...
RF Power Transistor -- VRF161	RF Power Vertical MOSFET. The VRF161 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,...
RF Power Transistor -- VRF161MP	RF Power Vertical MOSFET. The VRF161MP is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,...
RF Power Transistor -- VRF2933MP	RF Power Vertical MOSFET. The VRF2933 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,...
RF Power Transistor -- 0912GN-15E RF Power Transistor -- 0912GN-15EL RF Power Transistor -- 0912GN-50LE RF Power Transistor -- 1011GN-1200VEL RF Power Transistor -- 1011GN-250V RF Power Transistor -- 1011GN-30EL RF Power Transistor -- 1214GN-1200VG RF Power Transistor -- 1214GN-15E RF Power Transistor -- 1214GN-50E RF Power Transistor -- 1214GN-50EL RF Power Transistor -- 2729GN-250V RF Power Transistor -- 2731GN-120V RF Power Transistor -- 2N6439 RF Power Transistor -- A2V07H400-04NR3 RF Power Transistor -- A2V09H400-04SR3 RF Power Transistor -- A2V09H525-04NR6 RF Power Transistor -- AFM907NT1 RF Power Transistor -- AFV141KGSR5 RF Power Transistor -- ARF449BG RF Power Transistor -- ARF468AG RF Power Transistor -- ARF468BG RF Power Transistor -- ARF469AG RF Power Transistor -- ARF469BG RF Power Transistor -- CGH35015P RF Power Transistor -- D1001UK RF Power Transistor -- D1003UK RF Power Transistor -- D1005UK RF Power Transistor -- D1007UK RF Power Transistor -- D1008UK RF Power Transistor -- D1009UK RF Power Transistor -- D1010UK RF Power Transistor -- D1011UK RF Power Transistor -- D1011UKTR RF Power Transistor -- D1012UK RF Power Transistor -- D1013UK RF Power Transistor -- D1014UK RF Power Transistor -- D1016UK RF Power Transistor -- D1017UK RF Power Transistor -- D1018UK RF Power Transistor -- D1020UK RF Power Transistor -- D1021UK RF Power Transistor -- D1022UK RF Power Transistor -- D1023UK RF Power Transistor -- D1025UK RF Power Transistor -- D1029UK RF Power Transistor -- D1030UK RF Power Transistor -- D1034UK RF Power Transistor -- D1040UK RF Power Transistor -- D1053UK RF Power Transistor -- D1094UK RF Power Transistor -- D2001UK RF Power Transistor -- D2002UK RF Power Transistor -- D2003UK RF Power Transistor -- D2004UK RF Power Transistor -- D2005UK RF Power Transistor -- D2006UK RF Power Transistor -- D2007UK RF Power Transistor -- D2009UK RF Power Transistor -- D2012UK RF Power Transistor -- D2013UK RF Power Transistor -- D2014UK RF Power Transistor -- D2015UK RF Power Transistor -- D2019UK RF Power Transistor -- D2020UK RF Power Transistor -- D2021UK RF Power Transistor -- D2081UK.F RF Power Transistor -- D2081UK.FTR RF Power Transistor -- D2089UK RF Power Transistor -- D2201UK RF Power Transistor -- D2202UK RF Power Transistor -- D2203UK RF Power Transistor -- D2205UK RF Power Transistor -- D2207UK RF Power Transistor -- D2208UK RF Power Transistor -- D2210UK RF Power Transistor -- D2212UK RF Power Transistor -- D2213UK RF Power Transistor -- D2214UK RF Power Transistor -- D2219UKT/R RF Power Transistor -- D2220UK RF Power Transistor -- D2221UK RF Power Transistor -- D2224UK RF Power Transistor -- D2225UK RF Power Transistor -- D2229UK RF Power Transistor -- D2229UKTR RF Power Transistor -- D2230UK RF Power Transistor -- D2241UK RF Power Transistor -- D2254UK RF Power Transistor -- D2282UK.F RF Power Transistor -- D2290UK RF Power Transistor -- D2294UK RF Power Transistor -- D5001UK RF Power Transistor -- D5002UK RF Power Transistor -- D5006UK RF Power Transistor -- D5011UK RF Power Transistor -- D5017UK RF Power Transistor -- D5030UK RF Power Transistor -- DMD1020 RF Power Transistor -- DRF1211 RF Power Transistor -- DRF1410 RF Power Transistor -- DRF1510 RF Power Transistor -- DU1215S RF Power Transistor -- DU2805S RF Power Transistor -- DU2810S RF Power Transistor -- DU28120T RF Power Transistor -- DU28120V RF Power Transistor -- DU28200M RF Power Transistor -- DU2820S RF Power Transistor -- DU2840S RF Power Transistor -- DU2860T RF Power Transistor -- DU2860U RF Power Transistor -- DU2880T RF Power Transistor -- DU2880U RF Power Transistor -- DU2880V RF Power Transistor -- FH2164 RF Power Transistor -- GTRB097152FC-V1-R2 RF Power Transistor -- GTRB226002FC-V1-R2 RF Power Transistor -- ICPB1010-1-110I RF Power Transistor -- ICPB1020-1-110I RF Power Transistor -- ICPB2002-1-110I RF Power Transistor -- ICPB2005-1-110I RF Power Transistor -- LF2805A RF Power Transistor -- MAGB-103338-050S0P RF Power Transistor -- MAPC-A2004-BDTR1 RF Power Transistor -- MAPHST0045 RF Power Transistor -- MAPR-000912-500S00 RF Power Transistor -- MAPR-002729-170M00 RF Power Transistor -- MAPRST0912-350 RF Power Transistor -- MAPRST0912-50 RF Power Transistor -- MAPRST1030-1KS RF Power Transistor -- MATR-001214-XL4200 RF Power Transistor -- MATR-002735-637100 RF Power Transistor -- MRF10005 RF Power Transistor -- MRF1000MB RF Power Transistor -- MRF10031 RF Power Transistor -- MRF1004MB RF Power Transistor -- MRF10120 RF Power Transistor -- MRF10150 RF Power Transistor -- MRF10350 RF Power Transistor -- MRF10502 RF Power Transistor -- MRF1090MB RF Power Transistor -- MRF1150MB RF Power Transistor -- MRF151 RF Power Transistor -- MRF16006 RF Power Transistor -- MRF313 RF Power Transistor -- MRF314 RF Power Transistor -- MRF316 RF Power Transistor -- MRF317 RF Power Transistor -- MRF321 RF Power Transistor -- MRF323 RF Power Transistor -- MRF327 RF Power Transistor -- MRF392 RF Power Transistor -- MRF393 RF Power Transistor -- MRF421 RF Power Transistor -- MRF422 RF Power Transistor -- MRF426 RF Power Transistor -- MRF428 RF Power Transistor -- MRF429 RF Power Transistor -- MRF448 RF Power Transistor -- MRF454 RF Power Transistor -- MRF8VP13350NR5 RF Power Transistor -- MRFE6VP6300GSR5 RF Power Transistor -- MRFX1K80GNR5 RF Power Transistor -- MS1227D RF Power Transistor -- MS2248 RF Power Transistor -- MS2279 RF Power Transistor -- NPA1006 RF Power Transistor -- PH1090-15L RF Power Transistor -- PH1090-700B RF Power Transistor -- PH1090-75L RF Power Transistor -- PH1214-100EL RF Power Transistor -- PH1214-300M RF Power Transistor -- PH1214-40M RF Power Transistor -- PH2729-130M RF Power Transistor -- PXAE183708NB-V1-R2 RF Power Transistor -- UF2805B RF Power Transistor -- UF28100M RF Power Transistor -- UF28100V RF Power Transistor -- UF2810P RF Power Transistor -- UF28150J RF Power Transistor -- UF2815B RF Power Transistor -- UF2820P RF Power Transistor -- UF2840G RF Power Transistor -- UF2840P RF Power Transistor -- VRF141 RF Power Transistor -- VRF141G RF Power Transistor -- VRF151MQ RF Power Transistor -- VRF2944MP	Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the...
RF Power Transistor -- 0912GN-250V	The 0912GN-250V is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 18dB gain, 250 Watts of pulsed RF output power at 128...
RF Power Transistor -- 0912GN-300V	The 0912GN-300V is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 19dB gain, 300 Watts of pulsed RF output power at 128us...
RF Power Transistor -- 0912GN-500LV	The 0912GN-500LV is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 16dB gain, 500 Watts of pulsed RF output power at 450μs...
RF Power Transistor -- 0912GN-650V	The 0912GN-650V is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 17dB gain, 650 Watts of pulsed RF output power at 128μs...
RF Power Transistor -- 1011GN-1200V	The 1011GN-1200V is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 18.5 dB gain, 1200 Watts of pulsed RF output power at...
RF Power Transistor -- 1011GN-125E	The 1011GN-125E is an internally matched, common source, Class AB, GaN on SiC HEMT transmitter driver transistor capable of providing over 18.5 dB power gain and 125 W of pulsed...
RF Power Transistor -- 1011GN-125EL	The 1011GN-125EL is an internally matched, common source, Class AB, GaN on SiC HEMT transmitter driver transistor capable of providing over 18.5 dB power gain and 125 W of pulsed...
RF Power Transistor -- 1012GN-800V	The 1012GN-800V is an internally matched, COMMON SOURCE, class AB GaN on SiC high power transistor specifically designed for 20us, 6% duty cycle radar systems. It is capable of providing...
RF Power Transistor -- 1011GN-1600VG	The 1030/1090MHz, 50V or 52V 1011GN-1600VG is an internally matched, common source, class AB, GaN on SiC HEMT transistor capable of providing greater than 1600 Watts of pulsed output power...
RF Power Transistor -- 1214GN-120E	The 1214GN-120E is an internally matched, common source, Class AB, GaN on SiC HEMT transistor capable of providing over 17 dB typical power gain, 120 W of pulsed RF output...
RF Power Transistor -- 1214GN-400LV	The 1214GN-400LV is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 16dB gain, 400 Watts of pulsed RF output power at 4.5ms...
RF Power Transistor -- 1214GN-600VHE	The 1214GN-600VHE is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 16.9dB gain, 60% drain efficiency, 600 Watts of pulsed RF output...
RF Power Transistor -- 1214GN-700V	The 1214GN-700V is an internally matched, common-source, class-AB GaN-on-SiC HEMT transistor capable of providing over 18 dB gain, 700 W of pulsed RF output power at 300 us pulse width,...
RF Power Transistor -- 2729GN-300V	The 2729GN-300V is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor. The hermetically sealed 2729GN-300V transistor is designed for S-band pulsed surveillance radar applications and uses...
RF Power Transistor -- A5G07H800W19NR3	The A5G07H800W19 is a 112 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of...
RF Power Transistor -- A5G08H800W19NR3	The A5G08H800W19 is a 112 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of...
RF Power Transistor -- A5G19H605W19NR3	The A5G19H605W19N is an 85 W asymmetrical Doherty RF power GaN transistor designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1930...
RF Power Transistor -- A5G21H605W19NR3	The A5G21H605W19 is a 85 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of...
RF Power Transistor -- A5G26H605W19NR3	The A5G26H605W19N is an 85 W asymmetrical Doherty RF power GaN transistor designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496...
RF Power Transistor -- ARF1500	The ARF1500 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.
RF Power Transistor -- ARF1505	The ARF1505 is an RF power transistor designed for off-line 300V operation in very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40...
RF Power Transistor -- ARF1510	The ARF1510 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and...
RF Power Transistor -- ARF1511	The ARF1511 is four RF power transistor arranged in an H-Bridge confi guration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator...
RF Power Transistor -- ARF1519	The ARF1519 is an RF power transistor designed for very high power scienti fi c, commercial, medical and industrial RF power generator and amplifier applications up to 25 MHz.
RF Power Transistor -- ARF300	The ARF300 is a N-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at...
RF Power Transistor -- ARF446G	The ARF446 comprise a symmetric pair of common source RF power transistor designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz.
RF Power Transistor -- ARF447G	The ARF447 comprise a symmetric pair of common source RF power transistor designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz.
RF Power Transistor -- ARF460AG	The ARF460A comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65MHz. They have been...
RF Power Transistor -- ARF460BG	The ARF460B comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65MHz. They have been...
RF Power Transistor -- ARF463AG	The ARF463AG comprises a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. It has...
RF Power Transistor -- ARF463AP1G	The ARF463AP1 comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 100MHz. They have been...
RF Power Transistor -- ARF463BG	The ARF463BG comprises a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. It has...
RF Power Transistor -- ARF463BP1G	The ARF463BP1 comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 100MHz. They have been...
RF Power Transistor -- ARF465AG	The ARF465A comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 60 MHz.
RF Power Transistor -- ARF465BG	The ARF465B comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 60 MHz.
RF Power Transistor -- ARF466AG	The ARF466A comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 45 MHz. They have...
RF Power Transistor -- ARF466BG	The ARF466B comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 45 MHz. They have...
RF Power Transistor -- ARF466FL	The ARF466FL is a rugged high voltage RF power transistor designed for scientific, commercial, medical and industrial RF power amplifier applications up to 45 MHz. It has been optimized for...
RF Power Transistor -- ARF475FL	The ARF475FL is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and...
RF Power Transistor -- ARF476FL	The ARF476FL is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and...
RF Power Transistor -- CHK015AAQIA/20	The CHK015AaQIA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited...
RF Power Transistor -- CHK080A-SRA	The CHK080A-SRA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited...
RF Power Transistor -- CHK5010-99F/00	The CHK5010-99F is a 4W GaN on SiC High Electron Mobility Transistor (HEMT). The CHK5010-99F offers a general purpose and broadband solution for a variety of RF power applications. The...
RF Power Transistor -- CHK8013-99F	The CHK8013-99F is a 14W Gallium Nitride High Electron Mobility Transistor. This product offers a general purpose and broadband solution for a variety of RF power applications such as radar...
RF Power Transistor -- CHK8015-99F	The CHK8015-99F is a 16W Gallium Nitride on Silicon Carbide (GaN on SiC) High Electron Mobility Transistor (HEMT). This product offers a general purpose and broadband solution for a variety...
RF Power Transistor -- CHK8101-SYC/26	The CHK8101-SYC is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited...
RF Power Transistor -- CHK8101A99F	The CHK8101a99F is a 20W Gallium Nitride High Electron Mobility Transistor. This product offers a general purpose and broadband solution for a variety of RF power applications such as radar...
RF Power Transistor -- CHK8201-SYA	The CHK8201-SYA is an unmatched power bar microwave transistor, which integrates two CHK8101A-99F/00 power bars packaged together with individual access possible, that produces 45W of combined output power. The CHK8201-SYA...
RF Power Transistor -- CHK9013-99F	The CHK9013-99F is a 85W Gallium Nitride High Electron Mobility Transistor. This product offers a general purpose and broadband solution for a variety of RF power applications such as radar...
RF Power Transistor -- CHKA011ASXA/26	The CHKA011aSXA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited...
RF Power Transistor -- CHKA012A99F	The CHKA012a99F is a 140W Gallium Nitride High Electron Mobility Transistor. This product offers a general purpose and broadband solution for a variety of RF power applications such as radar...
RF Power Transistor -- CHKA012BSYA	The CHKA012bSYA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. This power bar offers general purpose and broadband solutions for a variety of RF power applications. It is...
RF Power Transistor -- CHZ180AASEB	The CHZ180AaSEB is an input matched and output pre-matched packaged Gallium Nitride High Electron Mobility Transistor. It allows broadband solutions for a variety of RF power applications in L-band. It...
RF Power Transistor -- CHZ8012-QJA/20	The CHZ8012-QJA is an S-Band Quasi-MMIC Power Amplifier based on GaN power bar and GaAs input and output matching circuits. The CHZ8012-QJA is fully matched on 50 Ohms. It can...
RF Power Transistor -- CHZ9012-QFA	The CHZ9012-QFA is an S-Band Quasi-MMIC High Power Amplifier based on GaN power bar and GaAs input and output matching circuits. It is fabricated using UMS 0.25µm GaN on SiC...
RF Power Transistor -- DC35GN-15-D3	The DC35-15-D3 is an unmatched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 18dB gain, 15 Watts of RF output power across the 30-3500 MHz...
RF Power Transistor -- DC35GN-15-Q4	The DC35GN-15-Q4 is a COMMON SOURCE, class -AB, GaN on SiC HEMT transistor capable of broadband pulsed and CW RF power applications. This transistor utilizes gold metallization, air-cavity Cu-base QFN...
RF Power Transistor -- DRF1200	The DRF1200 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and Non-Inverting. It was designed to provide the system...
RF Power Transistor -- DRF1201	The DRF1201 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and Non-Inverting. It was designed to provide the system...
RF Power Transistor -- DRF1203	The DRF1203 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and Non-Inverting. It was designed to provide the system...
RF Power Transistor -- DRF1300	The DRF1300 is a push-pull hybrid containing two high power gate drivers and two power MOSFETs. It was designed to provide the system designer increased flexibility, higher performance, and lowered...
RF Power Transistor -- DRF1301	The DRF1301 is a push-pull hybrid containing two high power gate drivers and two power MOSFETs. It was designed to provide the system designer increased flexibility, higher performance, and lowered...
RF Power Transistor -- GRF0020	The GRF0020 is a 30W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 7.0GHz on a 50V supply rail. The wide bandwidth of the GRF0020 makes it suitable...
RF Power Transistor -- GRF0020D	The GRF0020D is a 30W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 7GHz on a 50V supply rail. The wide bandwidth of the GRF0020D makes it suitable...
RF Power Transistor -- GRF0030	The GRF0030 is a 50W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 6.0GHz on a 50V supply rail. The wide bandwidth of the GRF0030 makes it suitable...
RF Power Transistor -- GRF0030D	The GRF0030D is a 50W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 6.0GHz on a 50V supply rail. The wide bandwidth of the GRF0030D makes it suitable...
RF Power Transistor -- MAGB-103340-015B0P	The MAGB-103340-015B0P is a wideband GaNHEMT D-mode amplifier designed for base stationapplications and optimized for 3.3 - 4.0 GHzmodulated signal operation. This device supportspulsed and linear operation with peak output...
RF Power Transistor -- MAGB-103740-008B0P	The MAGB-103740-008B0P is a wideband GaNHEMT D-mode amplifier designed for base stationapplications and optimized for 3.7 - 4.0 GHzmodulated signal operation. This device supportspulsed and linear operation with peak output...
RF Power Transistor -- MAGX-100027-002S0P	The MAGX-100027-002S0P is a GaN on Si HEMT D-mode transistor suitable for DC - 2.7 GHz frequency operation. The device supports both CW and pulsed operation with peak output power...
RF Power Transistor -- MAGX-100027-002STP	The MAGX-100027-002S0P is a GaN on Si HEMTD-mode transistor suitable for DC - 2.7 GHzfrequency operation. The device supports both CWand pulsed operation with peak output power levelsto 2 W...
RF Power Transistor -- MAGX-100027-100CTP	The MAGX-100027-100CTP is high power GaN on Si HEMT device optimized for DC - 2.7 GHz frequency operation. The device supports both CW and pulsed operation with peak output power...
RF Power Transistor -- MAGX-100027-300CTP	The MAGX-100027-300CTP is high power GaN on Si HEMT device optimized for DC - 2.7 GHz frequency operation. The device supports both CW and pulsed operation with peak output power...
RF Power Transistor -- MAPC-A1000-AD000 RF Power Transistor -- MAPC-A1000-ADTR1	The MAPC-A1000 is a GaN on Silicon CarbideHEMT D-mode amplifier suitable for 30 - 3000 MHzfrequency operation. The device supports both CWand pulsed operation with minimum output powerlevels of 25...
RF Power Transistor -- MAPC-A1103-ASTR1	The MAPC-A1103 is a high power GaN on Silicon Carbide HEMT D-mode amplifier suitable for DC - 2.7 GHz frequency operation. The device supports both CW and pulsed operation with...
RF Power Transistor -- MAPC-A1500-ABTR1	The MAPC-A1500 is a high power GaN on SiliconCarbide HEMT D-mode amplifier suitable for960 - 1215 MHz frequency operation. The devicesupports pulsed operation with output power levelsof 2600 W (64.1...
RF Power Transistor -- MHT1803A	The MHT1803A 300 W CW high efficiency RF power transistor is designed for consumer and commercial cooking applications operating from 1.8 to 50 MHz. Features Characterized from 30 to 50...
RF Power Transistor -- MMRF1050HR6	The MMRF1050H RF power transistor is designed for short pulse applications operating at frequencies from 850 to 950 MHz.
RF Power Transistor -- MMRF5018HSR5	The MMRF5018HSR5 is a 125 W CW RF power transistor is optimized for wideband operation up to 2700 MHz and includes input matching for extended bandwidth performance. With its high...
RF Power Transistor -- MRF300AN RF Power Transistor -- MRF300BN	The MRF300AN and MRF300BN are RF LDMOS Transistors targeting industrial scientific, and medical as well as Radio applications below 250MHz. The new TO-247 package devices feature mirror image drain and...
RF Power Transistor -- MRFE6VP5600HR5	The MRFE6VP5600HR5 is an extremely rugged 600W LDMOS transistor capable of withstanding a near 100% load mismatch of 65:1 VSWR at full CW power. These devices offer 50 volt operation,...
RF Power Transistor -- MRFE6VP5600HR6	The MRFE6VP5600HR6 is an extremely rugged 600W LDMOS transistor capable of withstanding a near 100% load mismatch of 65:1 VSWR at full CW power. These devices offer 50 volt operation,...
RF Power Transistor -- MRFE6VP5600HSR5	The MRFE6VP5600HSR5 is an extremely rugged 600W LDMOS transistor capable of withstanding a near 100% load mismatch of 65:1 VSWR at full CW power. These devices offer 50 volt operation,...
RF Power Transistor -- MRFE6VP6300HR5	The MRFE6VP6300HR5 is an extremely rugged 300W LDMOS transistor capable of withstanding a near 100% load mismatch of 65:1 VSWR at full CW power. These devices offer 50 volt operation,...
RF Power Transistor -- MRFX035HR5	The MRFX035H high ruggedness device is designed for use in high VSWR industrial, medical, broadcast, aerospace and mobile radio applications. Its unmatched input and output design supports frequency use from...
RF Power Transistor -- MRFX1K80HR5	The MRFX1K80H is based on NXP’s Xtra High Voltage LDMOS technology, designed for drain voltages up to 65V. This technology enables; fewer transistors to combine in high power systems, ease...
RF Power Transistor -- MRFX1K80NR5	The MRFX1K80N is the over-molded plastic version of MRFX1K80H and enables a 30% lower thermal resistance. It is based on NXP's new 65 V LDMOS technology that focuses on ease...
RF Power Transistor -- NPA1006A	The NPA1006A is a GaN on silicon amplifieroptimized for 20 - 1000 MHz operation. Thisamplifier has been designed for saturated and linearoperation with output levels to 12.5 W (41 dBm)assembled...
RF Power Transistor -- NPT2018	The NPT2018 GaN HEMT is a wideband transistor optimized for DC-2.5 GHz operation. This device has been designed for CW, pulsed, and linear operation with output power levels to 12W...
RF Power Transistor -- NPT2021	The NPT2021 GaN HEMT is a wideband transistor optimized for DC - 2.5 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 45 W...
RF Power Transistor -- PTAC240502FC-V1-R0	The PTAC240502FC is a 47-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2300 to 2400 MHz frequency band. Features include...
RF Power Transistor -- PTRA082808NF-V1-R5	The PTRA082808NF is a 280-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 790 to 820 MHz frequency band. Features include input and output matching,...
RF Power Transistor -- PTRA083818NF-V1-R5	The PTRA083818NF is a 275-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 733 to 805 MHz frequency band. Features include input matching, high gain...
RF Power Transistor -- PTRA093818NF-V1-R5	The PTRA093818NF is a 415-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 925 to 960 MHz frequency band. Features include input matching, high gain...
RF Power Transistor -- PTVA120252MTV1-R1K	The PTVA120252MT LDMOS FET is a 25-watt LDMOS FET designed for use in power amplifier applications in the 500 MHz to 1400 MHz frequency band. Features include high gain and...
RF Power Transistor -- PXAE213708NB-V1-R2	The PXAE213708NB is a 400-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110 to 2180 MHz frequency band. Features include input matching, high gain...
RF Power Transistor -- TA9110KMTRPBF	The TA9110K is a broadband GaN power transistor capable ofdelivering 6W CW from 30MHz to 4.0GHz frequency band. Thetransistor can be used at lower frequencies with reduced outputpower. The input...
RF Power Transistor -- TA9210DMTRPBF	The TA9210D is a broadband capable 12.5W GaN on Silicon power transistor covering 30MHz to 2.7GHz frequency band with a single match. TA9210D is usable upto 4GHz. The input and...
RF Power Transistor -- VRF150	The VRF150 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion.
RF Power Transistor -- VRF151	The VRF151 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion.
RF Power Transistor -- VRF151G	The VRF151G is designed for broadband commercial and military applications at frequencies to 175MHz. The high power, high gain, and broadband performance of this device make possible solid state transmitters...
RF Power Transistor -- VRF154FL	The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.
RF Power Transistor -- VRF157FL	The VRF157FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.
RF Power Transistor -- VRF2933	The VRF2933 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion.
RF Power Transistor -- VRF2944	The VRF2944 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion.
RF Power Transistor -- AFT20S015NR1	These 1.5 watt RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 1805 to 2690 MHz.
RF Power Transistor -- MRFE6VP61K25GSR5	These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input...
RF Power Transistor -- AFT27S012NT1	This 1.26 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.
RF Power Transistor -- A2V09H400-04NR3	This 107 W asymmetrical Doherty RF power LDMOS transistor is designedfor cellular base station applications covering the frequency range of 720 to960 MHz.
RF Power Transistor -- A3V07H600-42NR6	This 112 W asymmetrical Doherty RF power LDMOS transistor is designedfor cellular base station applications covering the frequency range of 616 to870 MHz.
RF Power Transistor -- MMRF5014HR5	This 125 W CW RF power transistor is optimized for wideband operation up to 2700 MHz and includes input matching for extended bandwidth performance. With its high gain and high...
RF Power Transistor -- A5G37H110NT4	This 13.5 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 3600 to 3800...
RF Power Transistor -- A5G35H110NT4	This 15.1 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 3300 to 3700...
RF Power Transistor -- A5G35H120NT2	This 18 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 3300 to 3700...
RF Power Transistor -- A2T08VD020NT1	This 2 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 960 MHz.
RF Power Transistor -- A5G26S004NT6	This 24 dBm RF power GaN transistor is designed for cellular base station applications covering the frequency range of 2496 to 2690 MHz.
RF Power Transistor -- A5G35S008NT6	This 27 dBm RF power GaN transistor is designed for cellular base station applications covering the frequency range of 3300 to 3800 MHz.
RF Power Transistor -- MRF24G300HSR5	This 300 W CW GaN transistor is designed for industrial, scientific and medical (ISM) applications at 2450 MHz. This device is suitable for use in CW, pulse, cycling and linear...
RF Power Transistor -- MRF8VP13350GNR3	This 350 W CW transistor is designed for industrial, scientific and medical (ISM) applications in the 700 to 1300 MHz frequency range. The transistor is capable of 350 W CW...
RF Power Transistor -- A2T09VD250NR1	This 65 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 716 to 960 MHz.
RF Power Transistor -- A5G35H055NT4	This 7.6 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 3400 to 3600...
RF Power Transistor -- MRF13750HR5 RF Power Transistor -- MRF13750HSR5	This 750 W CW transistor is designed for industrial, scientific and medical (ISM) applications in the 700 to 1300 MHz frequency range. The transistor is capable of CW or pulse...
RF Power Transistor -- A2V09H300-04NR3	This 79 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz.
RF Power Transistor -- A3G26D055NT4	This 8 W symmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 100 to 2690...
RF Power Transistor -- A5G23H065NT4	This 8.8 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2300 to 2400...
RF Power Transistor -- A3T21H456W23SR6	This 87 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 to 2200...
RF Power Transistor -- A2T09D400-23NR6	This 93 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 716 to 960 MHz.
RF Power Transistor -- A2T14H450-23NR6	This 93W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1452 to 1511 MHz.
RF Power Transistor -- MRF101AN RF Power Transistor -- MRF101BN	This device is designed for use in VHF/UHF communications, VHF TV broadcast and aerospace applications as well as industrial, scientific and medical applications. The device is exceptionally rugged and exhibits...
RF Power Transistor -- MRFE8VP8600HR5 RF Power Transistor -- MRFE8VP8600HSR5	This high power transistor is designed for use in UHF TV broadcast applications. The device has an integrated input matching network for better power distribution and is ideal for use...
RF Power Transistor -- MMRF1320GNR1	This high ruggedness device is designed for use in high VSWR defense and commercial radio communications and HF, VHF and UHF radar applications. The unmatched input and output design allows...
RF Power Transistor -- MRFE6VP61K25HR6 RF Power Transistor -- MRFE6VP61K25HSR5	This high ruggedness device is designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. It's unmatched input and...
RF Power Transistor -- MRFX600GSR5 RF Power Transistor -- MRFX600HR5	This high ruggedness device is designed for use in high VSWR industrial, medical, broadcast, aerospace and mobile radio applications. It's unmatched input and output design supports frequency use from 1.8...
RF Power Transistor -- MRFE6VP6600GNR3 RF Power Transistor -- MRFE6VP6600NR3	This high ruggedness device is designed for use in high VSWR industrial, medical, broadcast, aerospace, and mobile radio applications. It's unmatched input and output design allows for wide frequency range...
RF Power Transistor -- MRF1K50HR5	This high ruggedness device is designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub-GHz aerospace and mobile radio applications.
RF Power Transistor -- MMRF1308HR5	This high ruggedness device is designed for use in high VSWR military, aerospace and defense, industrial (including laser and plasma exciters), broadcast (analog and digital), and radio/land mobile applications. It's...
RF Power Transistor -- MMRF1310HR5 RF Power Transistor -- MMRF1310HSR5	This high ruggedness device is designed for use in high VSWR military, industrial (including laser and plasma exciters), broadcast (analog and digital), and radio/land mobile applications.
RF Power Transistor -- MRF1K50GNR5	This high ruggedness device, MRF1K50GNR5, is designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub-GHz aerospace and mobile radio...
RF Power Transistor -- MRF1K50NR5	This high ruggedness device, MRF1K50NR5, is designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub-GHz aerospace and mobile radio...
RF Power Transistor -- MMRF1314GSR5	This RF power device is designed for pulse applications operating at frequencies from 1200 to 1400 MHz. The device is suitable for use in pulse applications and is ideal for...
RF Power Transistor -- A5G35S004NT6	This RF power GaN transistor is designed for cellular base station applications covering the frequency range of 3300 to 4300 MHz.
RF Power Transistor -- AFT31150NR5	This RF power transistor is designed for applications operating at frequencies between 2700 and 3100 MHz. This device is suitable for use in pulse applications.
RF Power Transistor -- MRF6V12500GSR5	This RF power transistor is designed for applications operating at frequencies between 960 and 1215 MHz such as distance measuring equipment (DME), transponders and secondary radars for air traffic control.
RF Power Transistor -- AFV10700GSR5 RF Power Transistor -- AFV10700HR5 RF Power Transistor -- AFV10700HSR5	This RF power transistor is designed for pulse applications operating at 1030 to 1090 MHz and can be used over the 960 to 1215 MHz band at reduced power. This...
RF Power Transistor -- AFV121KGSR5 RF Power Transistor -- AFV121KHR5 RF Power Transistor -- AFV121KHSR5	This RF power transistor is designed for pulse applications operating at frequencies from 960 to 1215 MHz, such as distance measuring equipment (DME), secondary radars and high power transponders for...
RF Power Transistor -- PH1617-2	Wireless Bipolar Power Transistors
RF Power Transistor -- ARF1501	With Littelfuse’s August 2021 notification that they have transitioned their DE475-102N21A to an end of life status, consider Microchip’s ARF1501 as a direct cross and option to continue your existing...
RF Power Transistor -- ARF461AG RF Power Transistor -- ARF461BG	With Littelfuse’s August 2021 notification that they have transitioned their IXFH6N100F to an end of life status, consider Microchip’s ARF461AG/BG as a direct cross and option to continue your existing...

Other Datasheet Catalogs for Richardson RFPD