Richardson RFPD Datasheets for RF Transistors

RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors.
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Product Name	Notes
RF Power Transistor -- D1002UK	40W, 16dB gain @ 175MHz. General purpose RF power MOSFET
RF Power Transistor -- PH1090-175L	Avionics Power Transistors
RF Power Transistor -- NPT25100	Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology
RF Power Transistor -- NPT35015 RF Power Transistor -- NPTB00004	Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology
RF Power Transistor -- CG2H40035F	CG2H40035 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40035, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
RF Power Transistor -- CG2H80015D-GP4	CG2H80015D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,...
RF Power Transistor -- CG2H80045D-GP4	CG2H80045D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,...
RF Power Transistor -- CG2H80120D-GP4	CG2H80120D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,...
RF Power Transistor -- CGH21240F	CGH21240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH21240F ideal for 1.8-2.3GHz WCDMA...
RF Power Transistor -- CGH25120F	CGH25120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH25120F ideal for 2.3-2.7GHz WiMAX,...
RF Power Transistor -- CGH27015P	CGH27015P is a gallium nitride (GaN) high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for VHF, Comms, 3G,...
RF Power Transistor -- CGH27030F	CGH27030F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030F ideal for VHF, Comms,...
RF Power Transistor -- CGH27030S	CGH27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030S ideal for LTE,...
RF Power Transistor -- CGH31240F	CGH31240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH31240F ideal for 2.7-3.1GHz S-Band...
RF Power Transistor -- CGH40006P	CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
RF Power Transistor -- CGH40090PP	CGH40090PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40090PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
RF Power Transistor -- CGH40120F	CGH40120F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
RF Power Transistor -- CGH40180PP	CGH40180PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40180PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
RF Power Transistor -- CGH60008D-GP4	CGH60008D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,...
RF Power Transistor -- CGHV1F006S	CGHV1F006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L,...
RF Power Transistor -- CGHV1J025D-GP4	CGHV1J025D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 um gate length fabrication process. This GaN-on-SiC product offers...
RF Power Transistor -- CGHV40180F	CGHV40180F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40180F, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of...
RF Power Transistor -- CGHV40180P	CGHV40180P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40180P, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of...
RF Power Transistor -- CGHV40320D-GP4	CGHV40320D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,...
RF Power Transistor -- CGHV50200F	CGHV50200F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV50200F ideal for troposcatter communications,...
RF Power Transistor -- CGHV59350F	CGHV59350F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV59350F ideal for 5.2 -...
RF Power Transistor -- CGHV96050F1	CGHV96050F1 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to...
RF Power Transistor -- CGHV35120F	Cree’s CGHV35120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35120F ideal for 3.1...
RF Power Transistor -- MRF151A	Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM...
RF Power Transistor -- MRF177	Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as a driver or output amplifier in push-pull configurations. Can be used in manual gain...
RF Power Transistor -- MRF175GU	Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid...
RF Power Transistor -- MRF7P20040HR3	Designed for CDMA base station applications with frequencies from 2010 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base station modulations.
RF Power Transistor -- MRF6S27085HSR3 RF Power Transistor -- MRF6S27085HSR5	Designed for CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications. To be used in Class AB and Class C...
RF Power Transistor -- MW6S010GNR1	Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications.
RF Power Transistor -- AFM906NT1	Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large-signal, common-source amplifier...
RF Power Transistor -- AFT05MS031GNR1	Designed for mobile two--way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and broadband performance of these devices make them ideal for large--signal, common source...
RF Power Transistor -- MRF158	Designed for wideband large-signal amplifier and oscillator applications to 500 MHz.
RF Power Transistor -- MRF136	Designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range, in single ended configuration.
RF Power Transistor -- MRF154MP	Designed primarily for linear large-signal output stages in the 2.0-100 MHz frequency range.
RF Power Transistor -- MRF157MP	Designed primarily for linear large-signal output stages to 80 MHz.
RF Power Transistor -- MRF275G	Designed primarily for wideband large-signal output and driver stages from 100 - 500 MHz.
RF Power Transistor -- A5G23H110NT4	Disclaimer: Please note this is pre-release and the part is subject to change This 13.8 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring...
RF Power Transistor -- A5G38H045NT4	Disclaimer: Please note this is pre-release and the part is subject to change This 5.4 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring...
RF Power Transistor -- NPTB00025B	Gallium Nitride 28V, 25W RF Power Transistor. Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology
RF Power Transistor -- GTVA107001EC-V1	GTVA107001EC is a 700-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 960 to 1215 MHz frequency band. It features input matching, high efficiency, and thermally-enhanced...
RF Power Transistor -- AFT05MS006NT1	High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET. Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make...
RF Power Transistor -- MRF8HP21080HSR5	LDMOS RF Power Transistors; advanced high performance in-package Doherty configuration. N-Channel Enhancement-Mode Lateral MOSFETs. Designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can...
RF Power Transistor -- MMRF1312HSR5	MMRF1312HSR5 is designed for pulse applications operating at frequencies from 900 to 1215 MHz. The device is suitable for use in pulse applications with large duty cycles and long pulses...
RF Power Transistor -- MRFE6VP6300HSR5	N--Channel Enhancement--Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 1.8 and 600 MHz. These devices are suitable for use in high VSWR industrial, broadcast and...
RF Power Transistor -- MMRF1020-04GNR3	N-Channel Enhancement-Mode Lateral MOSFET. This 100 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz. The...
RF Power Transistor -- AFT18P3504S2LR6	N-Channel Enhancement-Mode Lateral MOSFET. This 63 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz.
RF Power Transistor -- MRF8S19260HR5	N-Channel Enhancement-Mode Lateral MOSFETs. Designed for CDMA and multi-carrier base station applications with frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for all...
RF Power Transistor -- MMRF1004GNR1	N-Channel Enhancement-Mode Lateral MOSFETs. Designed for Class A or Class AB general purpose applications with frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation and multipurpose amplifier...
RF Power Transistor -- PH1113-100 RF Power Transistor -- PH1214-110M RF Power Transistor -- PH1214-25M RF Power Transistor -- PH2226-110M RF Power Transistor -- PH2731-20M RF Power Transistor -- PH2931-20M RF Power Transistor -- PH3135-5M RF Power Transistor -- PH3135-90S	Radar Power Transistors
RF Power Transistor -- MRF6VP11KGHSR6	RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET. Designed primarily for pulsed wideband applications with frequencies up to 150 MHz. Device is unmatched and is suitable for use in...
RF Power Transistor -- MRF8P20160HSR5	RF Power Field Effect Transistor, N-Channel Enhancement-Mode Lateral MOSFET. Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class...
RF Power Transistor -- MRF8S21120HR5	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs. Designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB...
RF Power Transistor -- MRF6V14300HR3 RF Power Transistor -- MRF6V14300HR5	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs. RF Power transistors designed for applications operating at frequencies between 1200 and 1400 MHz, 1% to 12% duty cycle. These devices...
RF Power Transistor -- MRFE6VP61K25HS6	RF Power Field Effect Transistors. High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs. These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog...
RF Power Transistor -- MRF8S8260HR5	RF Power Field Effect Transistors. N--Channel Enhancement--Mode Lateral MOSFETs. Designed for CDMA base station applications with frequencies from 790 to 895 MHz. Can be used in Class AB and Class...
RF Power Transistor -- MRF8P8300HR5	RF Power Field Effect Transistors. N--Channel Enhancement--Mode Lateral MOSFETs. Designed for W--CDMA and LTE base station applications with frequencies from 790 to 820 MHz. Can be used in Class AB...
RF Power Transistor -- MRF8S21172HR5	RF Power Field Effect Transistors. N-Channel Enhancement - Mode Lateral MOSFETs. Designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in...
RF Power Transistor -- MRF8P23160WHR5	RF Power Field Effect Transistors. N-Channel Enhancement-Mode Lateral MOSFETs. Designed for base station applications with wide instantaneous bandwidth requirements covering frequencies from 2300 to 2400 MHz.
RF Power Transistor -- MRF5S19060NR1	RF Power Field Effect Transistors. N-Channel Enhancement-Mode Lateral MOSFETs. Designed for broadband commercial and industrial applications with frequencies from 1930 to 1990 MHz. The high gain and broadband performance of...
RF Power Transistor -- MRF8P26080HR5	RF Power Field Effect Transistors. N-Channel Enhancement-Mode Lateral MOSFETs. Designed for W-CDMA and LTE base station applications with frequencies from 2500 to 2700 MHz. Can be used in Class AB...
RF Power Transistor -- MRF6V2010GNR1	RF Power Field Effect Transistors. N-Channel Enhancement-Mode Lateral MOSFETs. Designed primarily for CW large-signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable...
RF Power Transistor -- MRF6V12500HSR5	RF Power Field Effect Transistors; N-Channel Enhancement-Mode Lateral MOSFETs. RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in...
RF Power Transistor -- A2T07H310-24SR6	RF Power LDMOS Transistor. This 47 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 716 to 960 MHz.
RF Power Transistor -- AFT20P060-4GNR3	RF Power LDMOS Transistor. This 6.3 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 2170 MHz.
RF Power Transistor -- MRFE6VP5150GNR1	RF Power LDMOS Transistor. This high ruggedness device is designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications.
RF Power Transistor -- MRFE6VS25LR5	RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to 2000 MHz. This device is fabricated using Freescale.s enhanced ruggedness...
RF Power Transistor -- MRF6V12250HSR3	RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed applications.
RF Power Transistor -- MRFE6VS25GNR1	RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to 2000 MHz. These devices are fabricated using Freescale’s enhanced ruggedness...
RF Power Transistor -- VRF161	RF Power Vertical MOSFET. The VRF161 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,...
RF Power Transistor -- VRF161MP	RF Power Vertical MOSFET. The VRF161MP is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,...
RF Power Transistor -- 0912GN-15E RF Power Transistor -- 0912GN-15EL RF Power Transistor -- 0912GN-50LE RF Power Transistor -- 1011GN-30EL RF Power Transistor -- 1214GN-1200VG RF Power Transistor -- 1214GN-15E RF Power Transistor -- 1214GN-50E RF Power Transistor -- 2729GN-250V RF Power Transistor -- 2N2857CSM RF Power Transistor -- A2V09H400-04SR3 RF Power Transistor -- A3T23H450W23SR6 RF Power Transistor -- AFT18H357-24SR6 RF Power Transistor -- ARF468AG RF Power Transistor -- ARF468BG RF Power Transistor -- ARF469AG RF Power Transistor -- CHK015AA-QIA RF Power Transistor -- CHK8015-99F RF Power Transistor -- CHK9014-99F/00 RF Power Transistor -- D1001UK RF Power Transistor -- D1008UK RF Power Transistor -- D1011UKT/R RF Power Transistor -- D1018UK RF Power Transistor -- D2001UK RF Power Transistor -- D2003UK RF Power Transistor -- D2004UK RF Power Transistor -- D2005UK RF Power Transistor -- D2012UK RF Power Transistor -- D2081UK.F RF Power Transistor -- D2089UK RF Power Transistor -- D2201UK RF Power Transistor -- D2205UK RF Power Transistor -- D2210UK RF Power Transistor -- D2213UK RF Power Transistor -- D2220UK RF Power Transistor -- D2224UK RF Power Transistor -- D2225UK RF Power Transistor -- D2290UK RF Power Transistor -- D2294UK RF Power Transistor -- D5001UK RF Power Transistor -- D5006UK RF Power Transistor -- DMD1020 RF Power Transistor -- DRF1410 RF Power Transistor -- DU2810S RF Power Transistor -- DU2880T RF Power Transistor -- GTRA412852FC-V1 RF Power Transistor -- GTRB204402FC1V2 RF Power Transistor -- GTRB226002FCVR2 RF Power Transistor -- GTRB266908FC-V1 RF Power Transistor -- MAPRST0912-350 RF Power Transistor -- MCA0802.011 RF Power Transistor -- MHT1803B RF Power Transistor -- MRF10005 RF Power Transistor -- MRF10502 RF Power Transistor -- MRF16006 RF Power Transistor -- MRF314 RF Power Transistor -- MRF317 RF Power Transistor -- MRF393 RF Power Transistor -- MRF426MP RF Power Transistor -- MRF454MP RF Power Transistor -- MRF8VP13350NR5 RF Power Transistor -- PAFT31150NR5 RF Power Transistor -- PAS1066 RF Power Transistor -- PH1090-75L RF Power Transistor -- PH1214-100EL RF Power Transistor -- PTFA041501F-V4 RF Power Transistor -- PTFA080551F-V4 RF Power Transistor -- PTRA084858NF-V1 RF Power Transistor -- PTRA094858NF-V1 RF Power Transistor -- PXAE183708NB-R2 RF Power Transistor -- SD1407 RF Power Transistor -- SRFE6VP61K25NR6 RF Power Transistor -- SRFJ150MP RF Power Transistor -- SSM2212CPZ-RL RF Power Transistor -- UF2805B RF Power Transistor -- UF28100M RF Power Transistor -- UF2810P RF Power Transistor -- VRF141G	Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the...
RF Power Transistor -- 0912GN-250V	The 0912GN-250V is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 18dB gain, 250 Watts of pulsed RF output power at 128...
RF Power Transistor -- 0912GN-300V	The 0912GN-300V is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 19dB gain, 300 Watts of pulsed RF output power at 128us...
RF Power Transistor -- 0912GN-650V	The 0912GN-650V is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 17dB gain, 650 Watts of pulsed RF output power at 128μs...
RF Power Transistor -- 1012GN-800V	The 1012GN-800V is an internally matched, COMMON SOURCE, class AB GaN on SiC high power transistor specifically designed for 20us, 6% duty cycle radar systems. It is capable of providing...
RF Power Transistor -- 1214GN-400LV	The 1214GN-400LV is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 16dB gain, 400 Watts of pulsed RF output power at 4.5ms...
RF Power Transistor -- ARF1510	The ARF1510 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and...
RF Power Transistor -- ARF446G	The ARF446 comprise a symmetric pair of common source RF power transistor designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz.
RF Power Transistor -- ARF447G	The ARF447 comprise a symmetric pair of common source RF power transistor designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz.
RF Power Transistor -- ARF449AG	The ARF449A comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 120 MHz.
RF Power Transistor -- ARF460AG	The ARF460A comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65MHz. They have been...
RF Power Transistor -- ARF460BG	The ARF460B comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65MHz. They have been...
RF Power Transistor -- ARF466FL	The ARF466FL is a rugged high voltage RF power transistor designed for scientific, commercial, medical and industrial RF power amplifier applications up to 45 MHz. It has been optimized for...
RF Power Transistor -- DC35GN-15-D3	The DC35-15-D3 is an unmatched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 18dB gain, 15 Watts of RF output power across the 30-3500 MHz...
RF Power Transistor -- DRF1200	The DRF1200 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and Non-Inverting. It was designed to provide the system...
RF Power Transistor -- DRF1201	The DRF1201 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and Non-Inverting. It was designed to provide the system...
RF Power Transistor -- DRF1300	The DRF1300 is a push-pull hybrid containing two high power gate drivers and two power MOSFETs. It was designed to provide the system designer increased flexibility, higher performance, and lowered...
RF Power Transistor -- GTRA184602FC-V1	The GTRA184602FC is a 460-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a...
RF Power Transistor -- GTRA362002FC-V1	The GTRA362002FC is a 200-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and...
RF Power Transistor -- GTRA364002FC-V1	The GTRA364002FC is a 400-watt (PSAT) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and...
RF Power Transistor -- GTVA101K42EV-V1	The GTVA101K42EV is a 1400-watt GaN on SiC high electron mobility transistor (HEMT) for use in avionics transponder applications. It is a input matched, highefficiency device in a thermally-enhanced package...
RF Power Transistor -- GTVA261701FA-V1	The GTVA261701FA is a 170-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a...
RF Power Transistor -- GTVA263202FC-V1	The GTVA263202FC is a 340-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a...
RF Power Transistor -- MAGB103340-015B	The MAGB-103340-015B0P is a wideband GaN HEMT D-mode amplifier designed for base station applications and optimized for 3.3 - 4.0 GHz modulated signal operation. This device supports pulsed and linear...
RF Power Transistor -- MAGX-100027002S	The MAGX-100027-002S0P is a GaN on Si HEMT D-mode transistor suitable for DC - 2.7 GHz frequency operation. The device supports both CW and pulsed operation with peak output power...
RF Power Transistor -- MAGX-100027100C	The MAGX-100027-100CTP is high power GaN on Si HEMT device optimized for DC - 2.7 GHz frequency operation. The device supports both CW and pulsed operation with peak output power...
RF Power Transistor -- MAGX-100027300C	The MAGX-100027-300CTP is high power GaN on Si HEMT device optimized for DC - 2.7 GHz frequency operation. The device supports both CW and pulsed operation with peak output power...
RF Power Transistor -- MRFX1K80HR5	The MRFX1K80H is based on NXP’s Xtra High Voltage LDMOS technology, designed for drain voltages up to 65V. This technology enables; fewer transistors to combine in high power systems, ease...
RF Power Transistor -- NE5500479A-A	The NE5500479A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for cellular handsets. Dies are manufactured using our NEWMOS technology (our 0.6 μm WSi...
RF Power Transistor -- NEM090603M-28	The NEM090603M-28 is an N-channel enhancement-mode lateral diffused MOS FET designed for driver or final stage in 0.8 to 1.0 GHz PA, such as, analog/digital TV-transmitter and GSM/EDGE/D-AMPS/PDC cellular base...
RF Power Transistor -- NEM090853P-28	The NEM090853P-28 is an N-channel enhancement-mode lateral MOS FET designed for 0.8 to 1.0 GHz, 90 W single-end power amplifier applications, such as, GSM/EDGE/N-CDMA cellular base station. Dies are manufactured...
RF Power Transistor -- NPT1015B	The NPT1015 GaN HEMT is a wideband transistor optimized for DC-2.5 GHz operation. This device is designed for CW, pulsed, and linear operation with output power levels to 50W (47...
RF Power Transistor -- NPT2018	The NPT2018 GaN HEMT is a wideband transistor optimized for DC-2.5 GHz operation. This device has been designed for CW, pulsed, and linear operation with output power levels to 12W...
RF Power Transistor -- NPTB00004A	The NPTB00004A GaN HEMT is a wideband transistor optimized for DC-6 GHz operation. This device has been designed for CW, pulsed, and linear operation with output power levels to 5W...
RF Power Transistor -- PD57030-E	The PD57030 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. PD57030 is designed for high gain, broad band commercial and industrial applications. PD57030 operates at 28 V...
RF Power Transistor -- PTFC262157FH-V1	The PTFC262157FH LDMOS FET is designed for use in Doherty cellular power applications in the 2620 MHz to 2690 MHz frequency band. Input and output matching have been optimized for...
RF Power Transistor -- PTFC270051M-V2	The PTFC270051M is an unmatched 5-watt LDMOS FET suitable for power amplifier applications with frequencies from 900 MHz to 2700 MHz. This LDMOS transistor offers excellent gain, efficiency and linearity...
RF Power Transistor -- PTRA084808NF-V1	The PTRA084808NF is a 550-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 734 to 821 MHz frequency band. Features include input matching, high gain...
RF Power Transistor -- PTRA087008NB-V1	The PTRA087008NB is a 650-watt LDMOS FET. It is designed for use in multi-standard cellular power amplifier applications from 755 MHz to 805 MHz. Manufactured with Wolfspeed's advanced LDMOS process,...
RF Power Transistor -- PTRA093818NF-V1	The PTRA093818NF is a 415-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 925 to 960 MHz frequency band. Features include input matching, high gain...
RF Power Transistor -- PTVA035002EV-V1	The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down...
RF Power Transistor -- PTVA082407NF-V1	The PTVA082407NF is a 240-watt LDMOS FET manufactured with Wolfspeed's 48-V LDMOS process. It is designed for use in multi-standard cellular power amplifier applications. It features a single ended design...
RF Power Transistor -- PTVA092407NF-V1	The PTVA092407NF is a 240-watt LDMOS FET manufactured with Wolfspeed's 48-V LDMOS process. It is designed for use in multi-standard cellular power amplifier applications. It features a single ended design...
RF Power Transistor -- PTVA102001EA-V1	The PTVA102001EA is a 200-watt LDMOS FET intended for use in power amplifier applications in the 960 to 1600 MHz frequency band. Features include high gain and thermally-enhanced package with...
RF Power Transistor -- PTVA120251EA-V2	The PTVA120251EA LDMOS FET is designed for use in power amplifier applications in the 500 MHz to 1400 MHz frequency band. Features include high gain and a thermally-enhanced package with...
RF Power Transistor -- PTVA123501FC-V1	The PTVA123501FC LDMOS FET is designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally enhanced package with...
RF Power Transistor -- PTVA127002EV250	The PTVA127002EV LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange.
RF Power Transistor -- PXAC182908FV-V1	The PXAC182908FV is a 240-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include...
RF Power Transistor -- PXAC241702FC-V1	The PXAC241702FC is a 28 V LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2300 to 2400 MHz frequency band. Features...
RF Power Transistor -- PXAC243502FV-V1	The PXAC243502FV LDMOS FET is a 350-watt LDMOS FET designed for use in power amplifier applications in the 2300 MHz to 2400 MHz frequency band. Features include an asymmetric design...
RF Power Transistor -- PXAC261212FC-V1	The PXAC261212FC is a 120-watt LDMOS FET with an asymmetric designed for use in multi-standard cellular power amplifier applications in the 2496 to 2690 MHz frequency band. It features dual-path...
RF Power Transistor -- PXAD184218FV-V1	The PXAD184218FV is a 420-watt (P3dB) LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features...
RF Power Transistor -- PXAE183708NB-V1	The PXAE183708NB is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching,...
RF Power Transistor -- PXFC192207FH-V3	The PXFC192207FH is a 220-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band. Features include input and output matching,...
RF Power Transistor -- PXFE211507FC-V1	The PXFE211507FC is a 170-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features include input and output matching,...
RF Power Transistor -- SD2932W	The SD2932 is a gold metalized N-channel MOS field-effect RF power transistor, intended for use in 50 V dc large signal applications up to 250 MHz.
RF Power Transistor -- SD4933MR	The SD4933MR is an N-channel MOS field-effect RF power transistor. It is intended for use in 50 V ISM applications up to 100 MHz. The SD4933MR benefits from the latest...
RF Power Transistor -- SD57045	The SD57045 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57045 is designed...
RF Power Transistor -- TA9210DMTRPBF	The TA9210D is a broadband capable 12.5W GaN on Silicon power transistor covering 30MHz to 2.7GHz frequency band with a single match. TA9210D is usable upto 4GHz. The input and...
RF Power Transistor -- VRF154FL	The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.
RF Power Transistor -- VRF2944	The VRF2944 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion.
RF Power Transistor -- WSGPA01-V1	The WSGPA01 is a GaN on SiC Discrete General Purpose Amplifier (GPA) designed for applications up to 5 GHz. The device operates from supply voltages up to 50 V and...
RF Power Transistor -- AFT20S015NR1	These 1.5 watt RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 1805 to 2690 MHz.
RF Power Transistor -- A5G37H110NT4	This 13.5 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 3600 to 3800...
RF Power Transistor -- MMRF1317HSR5	This 1300 W RF power transistor is designed for applications operating at frequencies between 1020 and 1100 MHz. This device is suitable for use in defense and commercial pulse applications,...
RF Power Transistor -- A5G26H110NT4	This 15 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690...
RF Power Transistor -- A5G35H120NT2	This 18 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 3300 to 3700...
RF Power Transistor -- A2T08VD021NT1	This 2 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 960 MHz.
RF Power Transistor -- A2G26H281-04SR3	This 50 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690...
RF Power Transistor -- MMRF1024HSR5	This 50 W asymmetrical Doherty RF power LDMOS transistor is optimized for instantaneous signal bandwidth capabilities covering the frequency range of 2496 to 2690 MHz. This part is ideally suited...
RF Power Transistor -- A3G26H501W17SR3	This 56 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690...
RF Power Transistor -- A5G23H065NT4	This 8.8 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2300 to 2400...
RF Power Transistor -- A2T09D400-23NR6	This 93 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 716 to 960 MHz.
RF Power Transistor -- MRF101BN	This device is designed for use in VHF/UHF communications, VHF TV broadcast and aerospace applications as well as industrial, scientific and medical applications. The device is exceptionally rugged and exhibits...
RF Power Transistor -- MRFE6VP61K25HR6	This high ruggedness device is designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. It's unmatched input and...
RF Power Transistor -- MRFE6VP61K25GN6 RF Power Transistor -- MRFE6VP61K25NR6	This high ruggedness device is designed for use in high VSWR industrial, medical, broadcast, aerospace and mobile radio applications. It's unmatched input and output design allows for wide frequency range...
RF Power Transistor -- MRFX600GSR5 RF Power Transistor -- MRFX600HR5	This high ruggedness device is designed for use in high VSWR industrial, medical, broadcast, aerospace and mobile radio applications. It's unmatched input and output design supports frequency use from 1.8...
RF Power Transistor -- MRFE6VP6600GNR3	This high ruggedness device is designed for use in high VSWR industrial, medical, broadcast, aerospace, and mobile radio applications. It's unmatched input and output design allows for wide frequency range...
RF Power Transistor -- MRF1K50NR5	This high ruggedness device, MRF1K50NR5, is designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub-GHz aerospace and mobile radio...
RF Power Transistor -- MHTG1200HSR3	This MHTG1200HS 300 W GaN transistor is designed for industrial, scientific and medical (ISM) applications at 2450 MHz. This device is suitable for use in CW, pulse, cycling and linear...
RF Power Transistor -- MMRF1314GSR5 RF Power Transistor -- MMRF1314HSR5	This RF power device is designed for pulse applications operating at frequencies from 1200 to 1400 MHz. The device is suitable for use in pulse applications and is ideal for...
RF Power Transistor -- MRF6V12500GSR5	This RF power transistor is designed for applications operating at frequencies between 960 and 1215 MHz such as distance measuring equipment (DME), transponders and secondary radars for air traffic control.
RF Power Transistor -- AFV10700HR5 RF Power Transistor -- AFV10700HSR5	This RF power transistor is designed for pulse applications operating at 1030 to 1090 MHz and can be used over the 960 to 1215 MHz band at reduced power. This...
RF Power Transistor -- AFV121KGSR5	This RF power transistor is designed for pulse applications operating at frequencies from 960 to 1215 MHz, such as distance measuring equipment (DME), secondary radars and high power transponders for...
RF Power Transistor -- ARF461BG	With Littelfuse’s August 2021 notification that they have transitioned their IXFH6N100F to an end of life status, consider Microchip’s ARF461AG/BG as a direct cross and option to continue your existing...

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Other Datasheet Catalogs for Richardson RFPD