Richardson RFPD Datasheets for RF Transistors

RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors.
RF Transistors: Learn more

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Product Name Notes
Advanced distributed base design high voltage, high speed NPN, Silicon Power Transistor
CG2H30070F is an internally matched gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H30070F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety...
CG2H40010F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40010F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
CG2H40010P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40010P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
CG2H40025F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40025F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
CG2H40025P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40025P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
CG2H40035 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40035, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
CG2H40045F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40045F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
CG2H40045P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40045P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
Designed for handheld two-way radio applications with frequencies from 1.8 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large-signal, common-source amplifier...
Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large-signal, common-source amplifier...
Designed for mobile two--way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and broadband performance of these devices make them ideal for large--signal, common source...
Designed for mobile two--way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and wideband performance of these devices make them ideal for large--signal, common source...
Designed for mobile two--way radio applications with frequencies from 764 to 941 MHz. The high gain, ruggedness and broadband performance of these devices make them ideal for large--signal, common source...
Designed for two-way radio applications with frequencies from 136 to941 MHz. The high gain, ruggedness and wideband performance of thisdevice make it ideal for large-signal, common-source amplifier applications inradio equipment.
For S-band pulsed radar applications, with typically over 14dB gain, the 2731GN-400V is an internally matched, common source, class AB, GaN on SiC HEMT transistor capable of delivering more than...
High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET. Designed for handheld two--way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device makes...
High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET. Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make...
High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET. Designed for mobile two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make...
HV9 2.1GHZ 230W NI780S-6
N--Channel Enhancement--Mode Lateral MOSFET. These 50 watt RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz. applications covering the...
N--Channel Enhancement--Mode Lateral MOSFET. This 50 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz.
N--Channel Enhancement--Mode Lateral MOSFET
N-Channel Enhancement-Mode Lateral MOSFET. This 1.26 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.
N-Channel Enhancement-Mode Lateral MOSFET. This 1.5 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 2700 MHz.
N-Channel Enhancement-Mode Lateral MOSFET. This 100 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz.
N-Channel Enhancement-Mode Lateral MOSFET. This 22 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range...
N-Channel Enhancement-Mode Lateral MOSFET. This 24 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range...
N-Channel Enhancement-Mode Lateral MOSFET. This 28 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2496 to 2690 MHz.
N-Channel Enhancement-Mode Lateral MOSFET. This 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.
N-Channel Enhancement-Mode Lateral MOSFET. This 30 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range...
N-Channel Enhancement-Mode Lateral MOSFET. This 32 W RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110...
N-Channel Enhancement-Mode Lateral MOSFET. This 45 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2300 to 2400 MHz.
N-Channel Enhancement-Mode Lateral MOSFET. This 45 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range...
N-Channel Enhancement-Mode Lateral MOSFET. This 50W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of...
N-Channel Enhancement-Mode Lateral MOSFET. This 63 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range...
N-Channel Enhancement-Mode Lateral MOSFET. This 63 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz.
RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET. This 32 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability...
RF Power LDMOS Transistor. Designed for handheld two--way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal...
RF Power LDMOS Transistor. Designed for mobile two-way radio applications with frequencies from 764 to 941 MHz. The high gain, ruggedness and broadband performance of this devices make it ideal...
RF Power LDMOS Transistor. N--Channel Enhancement--Mode Lateral MOSFET. This 50 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880...
RF Power LDMOS Transistor. This 100 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz
RF Power LDMOS Transistor. This 24 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range...
RF Power LDMOS Transistor. This 47 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 716 to 960 MHz.
RF Power LDMOS Transistor. This 50 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.
RF Power LDMOS Transistor. This 50 W RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110...
RF Power LDMOS Transistor. This 55 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.
RF Power LDMOS Transistor. This 6.3 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 2170 MHz.
RF Power LDMOS Transistors N−Channel Enhancement−Mode Lateral MOSFETs. These 45 watt RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the...
RF Power LDMOS Transistors. N−Channel Enhancement−Mode Lateral MOSFETs. These 56 watt asymmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 920...
RF Power Mosfet. N-Channel Push - Pull Pair. The ARF477FL is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull...
Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the...
The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR (SIT) capable of providing 1000 Watts of RF power from 406 to 450 MHz. The transistor...
The 0405SC-1500M is a Common Gate N-Channel DEPLETION MODE Class AB SILICON CARBIDE (SiC) STATIC INDUCTION TRANSISTOR (SIT) capable of providing 1500 Watts of RF power from 406 to 450...
The 0510GN-25-CP is a COMMON SOURCE, class-AB, GaN on SiC HEMT transistor amplifier for 50MHz-1GHz broadband pulsed and CW RF power applications. The transistor is housed in a Ceramic SMT...
The 0912GN-300V is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 19dB gain, 300 Watts of pulsed RF output power at 128us...
The 0912GN-500LV is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 16dB gain, 500 Watts of pulsed RF output power at 450μs...
The 0912GN-650V is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 17dB gain, 650 Watts of pulsed RF output power at 128μs...
The 1011GN-1000V is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 19 dB gain, 1000 Watts of pulsed RF output power at...
The 1011GN-1200V is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 18.5 dB gain, 1200 Watts of pulsed RF output power at...
The 1011GN-125E is an internally matched, common source, Class AB, GaN on SiC HEMT transmitter driver transistor capable of providing over 18.5 dB power gain and 125 W of pulsed...
The 1011GN-125EL is an internally matched, common source, Class AB, GaN on SiC HEMT transmitter driver transistor capable of providing over 18.5 dB power gain and 125 W of pulsed...
The 1011GN-250EL is an internally matched, common source, Class AB, GaN on SiC HEMT transistor/pallet amplifier capable of providing over 20.5 dB typical gain, 250 W of pulsed RF output...
The 1011GN-800V is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 19 dB gain, 800 Watts of pulsed RF output power at...
The 1012GN-1000V is an internally matched, common-source, class-AB, GaN-on-SiC HEMT transistor capable of providing over 19 dB gain, 1000 W of pulsed RF output power at 32 μs, and 2%...
The 1012GN-800V is an internally matched, COMMON SOURCE, class AB GaN on SiC high power transistor specifically designed for 20us, 6% duty cycle radar systems. It is capable of providing...
The 1030/1090MHz, 50V or 52V 1011GN-1600VG is an internally matched, common source, class AB, GaN on SiC HEMT transistor capable of providing greater than 1600 Watts of pulsed output power...
The 1214GN-120E is an internally matched, common source, Class AB, GaN on SiC HEMT transistor capable of providing over 17 dB typical power gain, 120 W of pulsed RF output...
The 1214GN-120EL is an internally matched, common source, Class AB, GaN on SiC HEMT transistor capable of providing over 17 dB typical power gain, 120 W of pulsed RF output...
The 1214GN-180LV is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 16.6dB gain, 180 Watts of pulsed RF output power at 3ms...
The 1214GN-280LV is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 15.5dB gain, 280 Watts of pulsed RF output power at 3ms...
The 1214GN-400LV is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 16dB gain, 400 Watts of pulsed RF output power at 4.5ms...
The 1214GN-550V is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 17dB gain, 550 Watts of pulsed RF output power at 300us...
The 1214GN-600VHE is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 16.9dB gain, 60% drain efficiency, 600 Watts of pulsed RF output...
The 1214GN-650V is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 17dB gain, 650 Watts of pulsed RF output power at 150μs...
The 1214GN-700V is an internally matched, common-source, class-AB GaN-on-SiC HEMT transistor capable of providing over 18 dB gain, 700 W of pulsed RF output power at 300 us pulse width,...
The 1315GN-700V is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 17dB gain, 700 Watts of pulsed RF output power at 150μs...
The 1416GN-120E is an internally matched, common source, Class AB, GaN on SiC HEMT transistor capable of providing over 17 dB typical power gain, 120 W of pulsed RF output...
The 1416GN-120EL is an internally matched, common source, Class AB, GaN on SiC HEMT transistor capable of providing over 17 dB typical power gain, 120 W of pulsed RF output...
The 2729GN-150V is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 15.7dB gain, 150 Watts of pulsed RF output power across the...
The 2729GN-270 is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 14dB gain, 280 Watts of pulsed RF output power at 100µs pulse width,...
The 2729GN-500V is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 14.5 dB gain, 500 Watts of pulsed RF output power across...
The 2731GN-280LV is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 14.77 dB gain, 280 Watts of pulsed RF output power at...
The 3135GN-280LV is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 13 dB gain, 280 Watts of pulsed RF output power at...
The 3135GN-400V is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT S-band transistor capable of providing over 400 Watts output power under 200 uS pulse width, 20%...
The 3942GN-120V is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 14 dB gain, 120 Watts of pulsed RF output power at...
The 5359GN-70V is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 10 dB gain, 70 Watts of pulsed RF output power at...
The ARF1500 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.
The ARF1501 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.
The ARF1505 is an RF power transistor designed for off-line 300V operation in very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40...
The ARF1510 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and...
The ARF1511 is four RF power transistor arranged in an H-Bridge confi guration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator...
The ARF1519 is an RF power transistor designed for very high power scienti fi c, commercial, medical and industrial RF power generator and amplifier applications up to 25 MHz.
The ARF300 is a N-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at...
The ARF446 comprise a symmetric pair of common source RF power transistor designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz.
The ARF447 comprise a symmetric pair of common source RF power transistor designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz.
The ARF448A comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz.
The ARF449A comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 120 MHz.
The ARF460A comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65MHz. They have been...
The ARF460B comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65MHz. They have been...
The ARF461A comprise a symmetric pair of common drain RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have...
The ARF461B comprise a symmetric pair of common drain RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have...
The ARF463AG comprises a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. It has...
The ARF463AP1 comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 100MHz. They have been...
The ARF463BG comprises a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. It has...
The ARF463BP1 comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 100MHz. They have been...
The ARF465A comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 60 MHz.
The ARF465B comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 60 MHz.
The ARF466A comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 45 MHz. They have...
The ARF466B comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 45 MHz. They have...
The ARF466FL is a rugged high voltage RF power transistor designed for scientific, commercial, medical and industrial RF power amplifier applications up to 45 MHz. It has been optimized for...
The ARF475FL is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and...
The ARF476FL is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and...
These 1.5 watt RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 1805 to 2690 MHz.
These 50 watt RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.
This 1.26 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.
This 107 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880...
This 107 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz.
This 107 W asymmetrical Doherty RF power LDMOS transistor is designedfor cellular base station applications covering the frequency range of 720 to960 MHz.
This 112 W asymmetrical Doherty RF power LDMOS transistor is designedfor cellular base station applications covering the frequency range of 616 to870 MHz.
This 125 W CW RF power transistor is optimized for wideband operation up to 2700 MHz and includes input matching for extended bandwidth performance. With its high gain and high...
This 14 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 3400 to 3600...
This 18 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1995 MHz.
This 18 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.
This 2 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 960 MHz.
This 2.5 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 400 to 2700 MHz.
This 28 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz.
This 28 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2300 to 2400 MHz.
This 28 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1880 to 2025...
This 32 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2300 to 2400 MHz.
This 32 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2496 to 2690 MHz.
This 32 W RF power GaN transistor is designed for cellular base station applications covering the frequency range of 1800 to 2200 MHz. This part is characterized and performance is...
This 32 W RF power GaN transistor is designed for cellular base station applications covering the frequency range of 3400 to 3600 MHz. This part is characterized and performance is...
This 32 W RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1995 MHz.
This 34 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690...
This 36 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.
This 36 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 to 2200...
This 38 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.
This 38 W RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 to 2200 MHz.
This 40 W RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth covering the frequency range of 3400 to 3600 MHz.
This 45 W RF power GaN transistor is designed for cellular base station applications covering the frequency range of 1800 to 2200 MHz. This part is characterized and performance is...
This 48 W RF power GaN transistor is designed for cellular base station applications covering the frequency range of 1805 to 2200 MHz. This part is characterized and performance is...
This 50 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690...
This 50 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz.
This 50 W RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1995 MHz.
This 51 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2300 to 2400...
This 54 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 850 to 960 MHz.
This 56 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690...
This 56 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880...
This 56 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 to 2200...
This 56 W RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880 MHz.
This 56 W RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 to 2200 MHz.
This 58 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1880 to 2025...
This 59 W RF power GaN transistor is designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz. This part is characterized and performance is...
This 60 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2496 to 2690 MHz.
This 63 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz.
This 63 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1995 MHz.
This 63 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.
This 63 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2110 to 2200 MHz.
This 63 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880...
This 63 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2300 to 2400...
This 63 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1995 MHz.
This 65 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.
This 65 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 716 to 960 MHz.
This 66 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2300 to 2400 MHz.
This 71 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz.
This 71 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880...
This 72 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.
This 79 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring wide instantaneous bandwidth capability covering the frequency range of 1800 to 2200 MHz.
This 79 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz.
This 79 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 716 to 960 MHz.
This 8 W symmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 100 to 2690...
This 80 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz.
This 81 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1930 to 1990...
This 87 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880...
This 87 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 to 2200...
This 89 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880...
This 93 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 716 to 960 MHz.
This 93W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1452 to 1511 MHz.
This RF power device is designed for commercial applications operating at frequencies from 1200 to 1400 MHz such as commercial L-Band radars. The device is suitable for use in pulse...
This RF power transistor is designed for applications operating at frequencies between 2700 and 3100 MHz. This device is suitable for use in pulse applications.
This RF power transistor is designed for pulse applications operating at 1030 to 1090 MHz and can be used over the 960 to 1215 MHz band at reduced power. This...
This RF power transistor is designed for pulse applications operating at frequencies from 960 to 1215 MHz, such as distance measuring equipment (DME), secondary radars and high power transponders for...

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