Richardson RFPD Datasheets for RF Transistors

RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors.
RF Transistors: Learn more

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Product Name Notes
180W L-Band HPA. GaN HEMT on SiC in SEB Package. The CHZ180A-SEB is an input matched and output pre-matched packaged Gallium Nitride High Electron Mobility Transistor. It allows broadband solutions...
2½W, 10dB gain @ 1GHz. Excellent surface-mount part for hand-held applications.
300W, 13dB gain @175MHz. The leading MOSFET for high linearity transmitters.
40W, 16dB gain @ 175MHz. General purpose RF power MOSFET
CG2H30070F is an internally matched gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H30070F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety...
CG2H40010F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40010F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
CG2H40010P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40010P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
CG2H40025F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40025F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
CG2H40025P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40025P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
CG2H40035 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40035, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
CG2H40045F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40045F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
CG2H40045P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40045P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
CG2H40120 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40120, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
CG2H80015D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,...
CG2H80030D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT), based on 28V, 0.25um GaN-on-SiC process technology. GaN has superior properties compared to silicon or gallium arsenide, including higher...
CG2H80045D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,...
CG2H80060D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,...
CG2H80120D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,...
CGH09120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH09120F ideal for MC-GSM, WCDMA...
CGH21120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH21120F ideal for 1.8-2.3 GHz...
CGH21240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH21240F ideal for 1.8-2.3GHz WCDMA...
CGH25120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH25120F ideal for 2.3-2.7GHz WiMAX,...
CGH27015F is a gallium nitride (GaN) high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015F ideal for VHF, Comms, 3G,...
CGH27015P is a gallium nitride (GaN) high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for VHF, Comms, 3G,...
CGH27030F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030F ideal for VHF, Comms,...
CGH27030P is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030P ideal for VHF, Comms,...
CGH27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030S ideal for LTE,...
CGH27060F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27060F ideal for VHF, Comms,...
CGH31240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH31240F ideal for 2.7-3.1GHz S-Band...
CGH35060P2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060P2 ideal for 3.1-3.5 GHz...
CGH35240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35240F ideal for 3.1-3.5GHz S-Band...
CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
CGH40006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006S, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
CGH40010F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40010F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
CGH40010P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40010P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
CGH40025F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40025F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
CGH40025P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40025P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
CGH40035F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40035F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
CGH40045F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40045F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
CGH40090PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40090PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
CGH40120F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
CGH40120P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
CGH40180PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40180PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
CGH55015F2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F2 ideal for C-band pulsed...
CGH55015P2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015P2 ideal for C-band pulsed...
CGH55030P2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030P2 ideal for C-band pulsed...
CGH60008D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,...
CGH60015D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,...
CGH60030D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,...
CGH60060D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,...
CGH60120D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,...
CGHV14250 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14250 ideal for 1.2 -...
CGHV14250P is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14250P ideal for 1.2 -...
CGHV14500F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500 ideal for 1.2 -...
CGHV14500P is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500P ideal for 1.2 -...
CGHV14800F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14800F ideal for 1.2 -...
CGHV1F006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L,...
CGHV1F025S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L,...
CGHV1J006D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 μm gate length fabrication process. This GaN-on-SiC product offers...
CGHV1J025D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 um gate length fabrication process. This GaN-on-SiC product offers...
CGHV1J070D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 um gate length fabrication process. This GaN-on-SiC product offers...
CGHV27015S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27015S ideal for LTE,...
CGHV27060MP is a 60W gallium nitride (GaN) high electron mobility transistor (HEMT) housed in a small plastic SMT package 4.4mm x 6.5mm. The transistor is a broadband device with no...
CGHV31500F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV31500F ideal for 2.7 -...
CGHV35060MP is a 60W input matched, gallium nitride (GaN) high electron mobility transistor (HEMT) optimized for S Band performance. The CGHV35060MP is suitable for typical bands of 2.7-3.1GHz and 3.1-3.5GHz...
CGHV35120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35120F ideal for 3.1 -...
CGHV35150F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35150F ideal for 2.9 -...
CGHV35150P is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35150P ideal for 2.9 -...
CGHV35400F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35400F ideal for 2.9 -...
CGHV37400F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV37400F ideal for 3.5 -...
CGHV40030F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L,...
CGHV40030P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L,...
CGHV40050F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40050F, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of...
CGHV40050P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40050P, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of...
CGHV40100 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40100, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of...
CGHV40100F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40100F, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of...
CGHV40180F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40180F, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of...
CGHV40180P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40180P, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of...
CGHV40200PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40200PP, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of...
CGHV40320D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,...
CGHV50200F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV50200F ideal for troposcatter communications,...
CGHV59070F is an internally matched gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV59070F, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety...
CGHV59070P is an internally matched gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV59070P, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety...
CGHV59350F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV59350F ideal for 5.2 -...
CGHV60040D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,...
CGHV60075D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,...
CGHV60170D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,...
CGHV96050F1 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to...
CGHV96050F2 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to...
CGHV96100F2 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to...
CGHV96130F is a gallium nitride (GaN) High Electron Mobility Transistor(HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FEToffers excellent power added efficiency in comparison to other technologies.
Designed for Class A or Class AB power amplifier applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications.
Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large-signal, common-source amplifier...
Designed for mobile two--way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and broadband performance of these devices make them ideal for large--signal, common source...
Designed for mobile two--way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and wideband performance of these devices make them ideal for large--signal, common source...
Designed for mobile two--way radio applications with frequencies from 764 to 941 MHz. The high gain, ruggedness and broadband performance of these devices make them ideal for large--signal, common source...
Designed for two-way radio applications with frequencies from 136 to941 MHz. The high gain, ruggedness and wideband performance of thisdevice make it ideal for large-signal, common-source amplifier applications inradio equipment.
Designed for wideband defense, industrial and commercial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device is ideal for large-signal, common-source amplifier applications...
Disclaimer: Please note this is pre-release and the part is subject to change This 13.8 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring...
Disclaimer: Please note this is pre-release and the part is subject to change This 5.4 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring...
GaN Wideband Transistor 28 V, 4 W. The MAGX-011086 GaN HEMT is a wideband transistor optimized for DC - 6 GHz operation in a user friendly package ideal for high...
Gold metallized multi-purpose silicon DMOS RF FET 15W 12.5V 500 MHz push-pull
GTVA107001EC is a 700-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 960 to 1215 MHz frequency band. It features input matching, high efficiency, and thermally-enhanced...
GTVA126001EC is a 600-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 1200 to 1400 MHz frequency band. It features input matching, high efficiency, and thermally-enhanced...
High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET. Designed for handheld two--way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device makes...
High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET. Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make...
High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET. Designed for mobile two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make...
High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET. RF power transistor suitable for both narrowband and broadband CW or pulse applications operating at frequencies from 1.8 to 2000 MHz, such as military...
High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET. This high ruggedness device is designed for use in high VSWR CW or pulse applications, such as HF, VHF, and low-band UHF radar and...
MMRF1312GSR5 is designed for pulse applications operating at frequencies from 900 to 1215 MHz. The device is suitable for use in pulse applications with large duty cycles and long pulses...
MMRF1312HR5 is designed for pulse applications operating at frequencies from 900 to 1215 MHz. The device is suitable for use in pulse applications with large duty cycles and long pulses...
MMRF1312HSR5 is designed for pulse applications operating at frequencies from 900 to 1215 MHz. The device is suitable for use in pulse applications with large duty cycles and long pulses...
N-Channel Enhancement-Mode Lateral MOSFET. This 1.26 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.
N-Channel Enhancement-Mode Lateral MOSFET. This 1.5 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 2700 MHz.
N-Channel Enhancement-Mode Lateral MOSFET. This 100 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz. The...
N-Channel Enhancement-Mode Lateral MOSFET. This 100 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz.
N-Channel Enhancement-Mode Lateral MOSFET. This 24 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range...
N-Channel Enhancement-Mode Lateral MOSFET. This 28 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2496 to 2690 MHz.
N-Channel Enhancement-Mode Lateral MOSFET. This 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.
N-Channel Enhancement-Mode Lateral MOSFET. This 30 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range...
N-Channel Enhancement-Mode Lateral MOSFET. This 63 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz.
N-Channel Enhancement-Mode Lateral MOSFETs. Designed for Class A or Class AB general purpose applications with frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation and multipurpose amplifier...
N-Channel Enhancement-Mode Lateral MOSFETs. Designed for pulse and CW wideband applications with frequencies up to 500 MHz. Devices are unmatched and are suitable for use in communications, radar and industrial...
N-Channel Enhancement-Mode Lateral MOSFETs. RF power transistors designed for applications operating at frequencies from 900 to 1215 MHz. These devices are suitable for use in defense and commercial pulse applications,...
New Product! BeO-free package, only 0.2 0C/W thermal resistance. 300W, 16dB gain @ 175MHz
RF MOSFET performance can be severely limited by the driver selection. The DRF1400A and B are half bridge hybrids with symmetrically orientated leads so that the two can easily be...
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs. Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To...
RF Power LDMOS Transistor. Designed for handheld two--way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal...
RF Power LDMOS Transistor. Designed for mobile two-way radio applications with frequencies from 764 to 941 MHz. The high gain, ruggedness and broadband performance of this devices make it ideal...
RF Power LDMOS Transistor. This 100 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz
RF Power LDMOS Transistor. This 47 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 716 to 960 MHz.
RF Power LDMOS Transistor. This 6.3 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 2170 MHz.
RF Power LDMOS Transistor. This high ruggedness device is designed for use in high VSWR military, aerospace and defense, radar and radio communications applications. It is an unmatched input and...
RF Power LDMOS Transistors. N−Channel Enhancement−Mode Lateral MOSFETs. These 56 watt asymmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 920...
RF Power Mosfet. N-Channel Push - Pull Pair. The ARF477FL is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull...
RF power transistor designed for applications operating at frequencies between 1200 and 1400 MHz, 1% to 12% duty cycle. This device is suitable for use in pulse applications, such as...
RF power transistor designed for applications operating at frequencies from 900 to 1215 MHz. This device is suitable for use in defense and commercial pulse applications, such as IFF and...
Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the...
The 0912GN-250V is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 18dB gain, 250 Watts of pulsed RF output power at 128...
The 0912GN-300V is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 19dB gain, 300 Watts of pulsed RF output power at 128us...
The 0912GN-500LV is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 16dB gain, 500 Watts of pulsed RF output power at 450μs...
The 0912GN-650V is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 17dB gain, 650 Watts of pulsed RF output power at 128μs...
The 1011GN-1200V is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 18.5 dB gain, 1200 Watts of pulsed RF output power at...
The 1011GN-125E is an internally matched, common source, Class AB, GaN on SiC HEMT transmitter driver transistor capable of providing over 18.5 dB power gain and 125 W of pulsed...
The 1011GN-125EL is an internally matched, common source, Class AB, GaN on SiC HEMT transmitter driver transistor capable of providing over 18.5 dB power gain and 125 W of pulsed...
The 1012GN-800V is an internally matched, COMMON SOURCE, class AB GaN on SiC high power transistor specifically designed for 20us, 6% duty cycle radar systems. It is capable of providing...
The 1030/1090MHz, 50V or 52V 1011GN-1600VG is an internally matched, common source, class AB, GaN on SiC HEMT transistor capable of providing greater than 1600 Watts of pulsed output power...
The 1214GN-120E is an internally matched, common source, Class AB, GaN on SiC HEMT transistor capable of providing over 17 dB typical power gain, 120 W of pulsed RF output...
The 1214GN-400LV is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 16dB gain, 400 Watts of pulsed RF output power at 4.5ms...
The 1214GN-600VHE is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 16.9dB gain, 60% drain efficiency, 600 Watts of pulsed RF output...
The 1214GN-700V is an internally matched, common-source, class-AB GaN-on-SiC HEMT transistor capable of providing over 18 dB gain, 700 W of pulsed RF output power at 300 us pulse width,...
The 2729GN-300V is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor. The hermetically sealed 2729GN-300V transistor is designed for S-band pulsed surveillance radar applications and uses...
The ARF1500 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.
The ARF1505 is an RF power transistor designed for off-line 300V operation in very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40...
The ARF1510 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and...
The ARF1511 is four RF power transistor arranged in an H-Bridge confi guration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator...
The ARF1519 is an RF power transistor designed for very high power scienti fi c, commercial, medical and industrial RF power generator and amplifier applications up to 25 MHz.
The ARF300 is a N-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at...
The ARF446 comprise a symmetric pair of common source RF power transistor designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz.
The ARF447 comprise a symmetric pair of common source RF power transistor designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz.
The ARF448A comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz.
The ARF449A comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 120 MHz.
The ARF460A comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65MHz. They have been...
The ARF460B comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65MHz. They have been...
The ARF463AG comprises a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. It has...
The ARF463AP1 comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 100MHz. They have been...
The ARF463BG comprises a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. It has...
The ARF463BP1 comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 100MHz. They have been...
The ARF465A comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 60 MHz.
The ARF465B comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 60 MHz.
The ARF466A comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 45 MHz. They have...
The ARF466B comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 45 MHz. They have...
The ARF466FL is a rugged high voltage RF power transistor designed for scientific, commercial, medical and industrial RF power amplifier applications up to 45 MHz. It has been optimized for...
The ARF475FL is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and...
The ARF476FL is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and...
The CGHV27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) which offers high efficiency, high gain and wide bandwidth capabilities. The CGHV27030S GaN HEMT devices are ideal...
The CHK015AaQIA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited...
The CHK080A-SRA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited...
The CHK5010-99F is a 4W GaN on SiC High Electron Mobility Transistor (HEMT). The CHK5010-99F offers a general purpose and broadband solution for a variety of RF power applications. The...
The CHK8013-99F is a 14W Gallium Nitride High Electron Mobility Transistor. This product offers a general purpose and broadband solution for a variety of RF power applications such as radar...
The CHK8015-99F is a 16W Gallium Nitride on Silicon Carbide (GaN on SiC) High Electron Mobility Transistor (HEMT). This product offers a general purpose and broadband solution for a variety...
The CHK9013-99F is a 85W Gallium Nitride High Electron Mobility Transistor. This product offers a general purpose and broadband solution for a variety of RF power applications such as radar...
The CHK9014-99F is a 55W Gallium Nitride High Electron Mobility Transistor. This product offers a general purpose and broadband solution for a variety of RF power applications such as radar...
The CHKA011aSXA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited...
The CHKA012bSYA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. This power bar offers general purpose and broadband solutions for a variety of RF power applications. It is...
The CHZ015A-QEG is an input matched packaged Gallium Nitride High Electron Mobility Transistor. It allows broadband solutions for a variety of RF power applications in L-band. The circuit is well...
The CHZ8012-QJA is an S-Band Quasi-MMIC Power Amplifier based on GaN power bar and GaAs input and output matching circuits. The CHZ8012-QJA is fully matched on 50 Ohms. It can...
The CHZ9012-QFA is an S-Band Quasi-MMIC High Power Amplifier based on GaN power bar and GaAs input and output matching circuits. It is fabricated using UMS 0.25µm GaN on SiC...
The DC35-15-D3 is an unmatched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 18dB gain, 15 Watts of RF output power across the 30-3500 MHz...
The DC35GN-15-Q4 is a COMMON SOURCE, class -AB, GaN on SiC HEMT transistor capable of broadband pulsed and CW RF power applications. This transistor utilizes gold metallization, air-cavity Cu-base QFN...
The DRF1200 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and Non-Inverting. It was designed to provide the system...
The DRF1201 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and Non-Inverting. It was designed to provide the system...
The DRF1203 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and Non-Inverting. It was designed to provide the system...
The DRF1300 is a push-pull hybrid containing two high power gate drivers and two power MOSFETs. It was designed to provide the system designer increased flexibility, higher performance, and lowered...
The DRF1301 is a push-pull hybrid containing two high power gate drivers and two power MOSFETs. It was designed to provide the system designer increased flexibility, higher performance, and lowered...
The GTRA184602FC is a 460-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a...
The GTRA262802FC is a 250-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency,...
The GTRA263902FC is a 370-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a...
The GTRA362002FC is a 200-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and...
The GTRA362802FC is a 280-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and...
The GTRA364002FC is a 400-watt (PSAT) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and...
The GTRA374902FC is a 450-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a...
The GTRA384802FC is a 400-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input and output matching, high efficiency,...
The GTRB097152FC-V1 is a 900-watt (P4dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features high efficiency, and a thermally-enhanced...
The GTRB264318FC is a 400-watt (P3dB) GaN on Sic high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features internal matching, high efficiency, and a...
The GTRB267008FC-V1 is a 620-watt (P4dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in Doherty cellular power amplifier applications. It features high linearized efficiency across 2496...
The GTRB384608FC-V1 is a 440-watt (P3dB), GaN on SiC high electron mobility transistor (HEMT) designed for use in frequency band n78 cellular amplifiers applications. Featuring an Asymmetric Doherty Design, the...
The GTVA101K42EV is a 1400-watt GaN on SiC high electron mobility transistor (HEMT) for use in avionics transponder applications. It is a input matched, highefficiency device in a thermally-enhanced package...
The GTVA104001FA is a 400-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 960 to 1215 MHz frequency band. It features input matching, high efficiency, and...
The GTVA123501FA is a 350-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 1200 to 1400 MHz frequency band. It features input matching, high efficiency, and...
The GTVA212701FA is a 270-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 2110 to 2200 MHz frequency band. It features input matching, high efficiency, and...
The GTVA220701FA is a 70-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a...
The GTVA261701FA is a 170-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a...
The GTVA261802FC is a 170-watt GaN on SiC high electron mobility transistor for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package...
The GTVA262701FA is a 270-watt GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced...
The GTVA262711FA is a 300-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a...
The GTVA263202FC is a 340-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a...
The GTVA311801FA is a 180-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 2700 to 3100 MHz frequency band. It features input matching, high efficiency, and...
The GTVA355001EC is a 500-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 2900 to 3500 MHz frequency band. It features input and output matching, high...
The ICPB1005 is fabricated using GaN on SiC technology with an optimized field plate to deliver highest efficiency and power from DC to 14 GHz. The ICPB1005 provides in excess...
The MAGB-103340-015B0P is a wideband GaNHEMT D-mode amplifier designed for base stationapplications and optimized for 3.3 - 4.0 GHzmodulated signal operation. This device supportspulsed and linear operation with peak output...
The MAGB-103740-008B0P is a wideband GaNHEMT D-mode amplifier designed for base stationapplications and optimized for 3.7 - 4.0 GHzmodulated signal operation. This device supportspulsed and linear operation with peak output...
The MAGX-100027-002S0P is a GaN on Si HEMT D-mode transistor suitable for DC - 2.7 GHz frequency operation. The device supports both CW and pulsed operation with peak output power...
The MAGX-100027-002S0P is a GaN on Si HEMTD-mode transistor suitable for DC - 2.7 GHzfrequency operation. The device supports both CWand pulsed operation with peak output power levelsto 2 W...
The MAGX-100027-015S0P is a high power GaN on Silicon HEMT D-mode transistor suitable for DC - 2.7 GHz frequency operation. The device supports both CW and pulsed operation with peak...
The MAGX-100027-050C0P is a high power GaN on Silicon HEMT D-mode amplifier optimized for DC - 2700 MHz frequency operation. The device supports both CW and pulsed operation with peak...
The MAGX-100027-050CTP is a high power GaN on Silicon HEMT D-mode amplifier optimized for DC - 2700 MHz frequency operation. The device supports both CW and pulsed operation with peak...
The MAGX-100027-100C0P is high power GaN onSi HEMT device optimized for DC - 2.7 GHzfrequency operation. The device supports both CWand pulsed operation with peak output power levelsof 100 W...
The MAGX-100027-100CTP is high power GaN on Si HEMT device optimized for DC - 2.7 GHz frequency operation. The device supports both CW and pulsed operation with peak output power...
The MAGX-100027-300C0P is high power GaN onSi HEMT device optimized for DC - 2.7 GHzfrequency operation. The device supports both CWand pulsed operation with peak output power levelsof 300 W...
The MAGX-100027-300CTP is high power GaN on Si HEMT device optimized for DC - 2.7 GHz frequency operation. The device supports both CW and pulsed operation with peak output power...
The MAPC-A1000 is a GaN on Silicon CarbideHEMT D-mode amplifier suitable for 30 - 3000 MHzfrequency operation. The device supports both CWand pulsed operation with minimum output powerlevels of 25...
The MAPC-A1100 is a high power GaN on SiliconCarbide HEMT D-mode amplifier suitable forDC - 3.5 GHz frequency operation. The devicesupports both CW and pulsed operation with outputpower levels of...
The MAPC-A1103 is a high power GaN on Silicon Carbide HEMT D-mode amplifier suitable for DC - 2.7 GHz frequency operation. The device supports both CW and pulsed operation with...
The MAPC-A1103 is a high power GaN on SiliconCarbide HEMT D-mode amplifier suitable forDC - 2.7 GHz frequency operation. The devicesupports both CW and pulsed operation with outputpower levels of...
The MAPC-A1500 is a high power GaN on SiliconCarbide HEMT D-mode amplifier suitable for960 - 1215 MHz frequency operation. The devicesupports pulsed operation with output power levelsof 2600 W (64.1...
The MAPC-A1501 is a high power GaN on SiliconCarbide HEMT D-mode amplifier suitable for960 - 1215 MHz frequency operation. The devicesupports pulsed operation with output power levelsof 1300 W (61.1...
The MDSGN-750ELMV is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 18.5 dB gain, 750 Watts of pulsed RF output power at...
The MHT1803A 300 W CW high efficiency RF power transistor is designed for consumer and commercial cooking applications operating from 1.8 to 50 MHz. Features Characterized from 30 to 50...
The MMRF1050H RF power transistor is designed for short pulse applications operating at frequencies from 850 to 950 MHz.
These 1.5 watt RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 1805 to 2690 MHz.
These 50 watt RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.
This 1.26 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.
This 100 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz. The transistor is also suitable...
This 107 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880...
This 107 W asymmetrical Doherty RF power LDMOS transistor is designedfor cellular base station applications covering the frequency range of 720 to960 MHz.
This 112 W asymmetrical Doherty RF power LDMOS transistor is designedfor cellular base station applications covering the frequency range of 616 to870 MHz.
This 13.5 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 3600 to 3800...
This 14 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 3400 to 3600...
This 15 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690...
This 15.1 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 3300 to 3700...
This 18 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 3300 to 3700...
This 18 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1995 MHz.
This 18 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.
This 2 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 960 MHz.
This 2.5 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 400 to 2700 MHz.
This 24 dBm RF power GaN transistor is designed for cellular base station applications covering the frequency range of 2496 to 2690 MHz.
This 27 dBm RF power GaN transistor is designed for cellular base station applications covering the frequency range of 2496 to 2690 MHz.
This 27 dBm RF power GaN transistor is designed for cellular base station applications covering the frequency range of 3300 to 3800 MHz.
This 28 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz.
This 28 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2300 to 2400 MHz.
This 32 W RF power GaN transistor is designed for cellular base station applications covering the frequency range of 3400 to 3600 MHz. This part is characterized and performance is...
This 34 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690...
This 36 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.
This 38 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.
This 40 W RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth covering the frequency range of 3400 to 3600 MHz.
This 45 W RF power GaN transistor is designed for cellular base station applications covering the frequency range of 1800 to 2200 MHz. This part is characterized and performance is...
This 48 W RF power GaN transistor is designed for cellular base station applications covering the frequency range of 1805 to 2200 MHz. This part is characterized and performance is...
This 50 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690...
This 50 W asymmetrical Doherty RF power LDMOS transistor is optimized for instantaneous signal bandwidth capabilities covering the frequency range of 2496 to 2690 MHz. This part is ideally suited...
This 50 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz.
This 51 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2300 to 2400...
This 56 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690...
This 56 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 to 2200...
This 59 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690...
This 59 W RF power GaN transistor is designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz. This part is characterized and performance is...
This 63 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.
This 63 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880...
This 63 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2300 to 2400...
This 63 W asymmetrical Doherty RF power LDMOS transistor is optimized for instantaneous signal bandwidth capabilities covering the frequency range of 2110 to 2170 MHz. This part is ideally suited...
This 65 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.
This 65 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 716 to 960 MHz.
This 66 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2300 to 2400 MHz.
This 66W asymmetrical Doherty RF power LDMOS transistor is optimized for instantaneous signal bandwidth capabilities covering the frequency range of 2300 to 2400 MHz. This part is ideally suited for...
This 7.6 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 3400 to 3600...
This 71 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880...
This 79 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring wide instantaneous bandwidth capability covering the frequency range of 1800 to 2200 MHz.
This 79 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz.
This 8 W symmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 100 to 2690...
This 8.8 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2300 to 2400...
This 80 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz.
This 81 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1930 to 1990...
This 87 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880...
This 87 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 to 2200...
This 93 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 716 to 960 MHz.
This 93W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1452 to 1511 MHz.
This high ruggedness device is designed for use in high VSWR military, aerospace and defense, industrial (including laser and plasma exciters), broadcast (analog and digital), and radio/land mobile applications. It's...
This high ruggedness device is designed for use in high VSWR military, industrial (including laser and plasma exciters), broadcast (analog and digital), and radio/land mobile applications.
This MHTG1200HS 300 W GaN transistor is designed for industrial, scientific and medical (ISM) applications at 2450 MHz. This device is suitable for use in CW, pulse, cycling and linear...
This RF power device is designed for commercial applications operating at frequencies from 1200 to 1400 MHz such as commercial L-Band radars. The device is suitable for use in pulse...
This RF power device is designed for pulse applications operating at frequencies from 1200 to 1400 MHz. The device is suitable for use in pulse applications and is ideal for...
This RF power GaN transistor is designed for cellular base station applications covering the frequency range of 3300 to 4300 MHz.
This RF power transistor is designed for applications operating at frequencies between 2700 and 3100 MHz. This device is suitable for use in pulse applications.
This RF power transistor is designed for pulse applications operating at 1030 to 1090 MHz and can be used over the 960 to 1215 MHz band at reduced power. This...
This RF power transistor is designed for pulse applications operating at frequencies from 960 to 1215 MHz, such as distance measuring equipment (DME), secondary radars and high power transponders for...
With Littelfuse’s August 2021 notification that they have transitioned their DE475-102N21A to an end of life status, consider Microchip’s ARF1501 as a direct cross and option to continue your existing...
With Littelfuse’s August 2021 notification that they have transitioned their IXFH6N100F to an end of life status, consider Microchip’s ARF461AG/BG as a direct cross and option to continue your existing...
Wolfspeed’s CGHV31500F1 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency and high gain for the 2.7 - 3.1 GHz S-Band radar band. The...
Wolfspeed’s CGHV35400F1 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency and high gain for the 2.9 - 3.5 GHz S-Band radar band. The...
Wolfspeed's CGHV38375F is a packaged, 400 W HPA matched to 50 ohms at both input andoutput ports. The CGHV38375F operates from 2.75 - 3.75 GHz providing coverage over theentire S-Band...

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