Richardson RFPD Datasheets for RF Transistors
RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors.
RF Transistors: Learn more
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| Product Name | Notes |
|---|---|
| 2½W, 10dB gain @ 1GHz. Excellent surface-mount part for hand-held applications. | |
| 300W, 13dB gain @175MHz. The leading MOSFET for high linearity transmitters. | |
| 40W, 16dB gain @ 175MHz. General purpose RF power MOSFET | |
| Disclaimer: Please note this is pre-release and the part is subject to change This 13.8 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring... | |
| Disclaimer: Please note this is pre-release and the part is subject to change This 5.4 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring... | |
| A high power RF Amplifier module with this device is available: 1203/BBM3K5ANQ 1208/BBM3K5OKO 1117/BBM3K5KEL 1119/BBM3K5KHM 1164/BBM3Q6AHM | |
| AVIONICS-190W-TRANSI STOR | |
| AVIONICS-20W-TRANSIS TOR | |
| AVIONICS-70W-TRANSIS TOR | |
| CG2H30070F is an internally matched gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H30070F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety... | |
| CG2H40010F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40010F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of... | |
| CG2H40010P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40010P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of... | |
| CG2H40025F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40025F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of... | |
| CG2H40025P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40025P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of... | |
| CG2H40035 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40035, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of... | |
| CG2H40045F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40045F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of... | |
| CG2H40045P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40045P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of... | |
| CG2H40120 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40120, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of... | |
| CG2H80015D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,... | |
| CG2H80030D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT), based on 28V, 0.25um GaN-on-SiC process technology. GaN has superior properties compared to silicon or gallium arsenide, including higher... | |
| CG2H80045D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,... | |
| CG2H80060D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,... | |
| CG2H80120D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,... | |
| CGH09120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH09120F ideal for MC-GSM, WCDMA... | |
| CGH21120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH21120F ideal for 1.8-2.3 GHz... | |
| CGH21240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH21240F ideal for 1.8-2.3GHz WCDMA... | |
| CGH25120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH25120F ideal for 2.3-2.7GHz WiMAX,... | |
| CGH27015F is a gallium nitride (GaN) high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015F ideal for VHF, Comms, 3G,... | |
| CGH27015P is a gallium nitride (GaN) high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for VHF, Comms, 3G,... | |
| CGH27030F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030F ideal for VHF, Comms,... | |
| CGH27030P is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030P ideal for VHF, Comms,... | |
| CGH27060F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27060F ideal for VHF, Comms,... | |
| CGH31240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH31240F ideal for 2.7-3.1GHz S-Band... | |
| CGH35060F2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F2 ideal for 3.1-3.5 GHz... | |
| CGH35060P2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060P2 ideal for 3.1-3.5 GHz... | |
| CGH35240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35240F ideal for 3.1-3.5GHz S-Band... | |
| CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of... | |
| CGH40006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006S, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of... | |
| CGH40010F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40010F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of... | |
| CGH40010P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40010P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of... | |
| CGH40025F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40025F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of... | |
| CGH40025P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40025P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of... | |
| CGH40035F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40035F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of... | |
| CGH40045F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40045F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of... | |
| CGH40090PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40090PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of... | |
| CGH40120F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of... | |
| CGH40120P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of... | |
| CGH40180PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40180PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of... | |
| CGH55015F2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F2 ideal for C-band pulsed... | |
| CGH55030P2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030P2 ideal for C-band pulsed... | |
| CGH60008D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,... | |
| CGH60015D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,... | |
| CGH60030D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,... | |
| CGH60060D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,... | |
| CGH60120D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,... | |
| CGHV14250 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14250 ideal for 1.2 -... | |
| CGHV14250P is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14250P ideal for 1.2 -... | |
| CGHV14500F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500 ideal for 1.2 -... | |
| CGHV14500P is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500P ideal for 1.2 -... | |
| CGHV14800F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14800F ideal for 1.2 -... | |
| CGHV1F006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L,... | |
| CGHV1F025S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L,... | |
| CGHV1J006D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 μm gate length fabrication process. This GaN-on-SiC product offers... | |
| CGHV1J025D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 um gate length fabrication process. This GaN-on-SiC product offers... | |
| CGHV1J070D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 um gate length fabrication process. This GaN-on-SiC product offers... | |
| CGHV27015S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27015S ideal for LTE,... | |
| CGHV27060MP is a 60W gallium nitride (GaN) high electron mobility transistor (HEMT) housed in a small plastic SMT package 4.4mm x 6.5mm. The transistor is a broadband device with no... | |
| CGHV31500F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV31500F ideal for 2.7 -... | |
| CGHV31500F1 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency and high gain for the 2.7 - 3.1 GHz S-Band radar band. The device... | |
| CGHV35060MP is a 60W input matched, gallium nitride (GaN) high electron mobility transistor (HEMT) optimized for S Band performance. The CGHV35060MP is suitable for typical bands of 2.7-3.1GHz and 3.1-3.5GHz... | |
| CGHV35120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35120F ideal for 3.1 -... | |
| CGHV35150F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35150F ideal for 2.9 -... | |
| CGHV35150P is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35150P ideal for 2.9 -... | |
| CGHV35400F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35400F ideal for 2.9 -... | |
| CGHV35400F1 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency and high gain for the 2.9 - 3.5 GHz S-Band radar band. The device... | |
| CGHV37400F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV37400F ideal for 3.5 -... | |
| CGHV38375F is a packaged, 400 W HPA matched to 50 ohms at both input andoutput ports. The CGHV38375F operates from 2.75 - 3.75 GHz providing coverage over theentire S-Band radar... | |
| CGHV40030F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L,... | |
| CGHV40030P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L,... | |
| CGHV40050F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40050F, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of... | |
| CGHV40050P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40050P, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of... | |
| CGHV40100 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40100, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of... | |
| CGHV40100F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40100F, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of... | |
| CGHV40180F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40180F, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of... | |
| CGHV40180P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40180P, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of... | |
| CGHV40200PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40200PP, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of... | |
| CGHV40320D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,... | |
| CGHV50200F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV50200F ideal for troposcatter communications,... | |
| CGHV59070F is an internally matched gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV59070F, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety... | |
| CGHV59070P is an internally matched gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV59070P, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety... | |
| CGHV59350F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV59350F ideal for 5.2 -... | |
| CGHV60040D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,... | |
| CGHV60075D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,... | |
| CGHV60170D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,... | |
| CGHV96050F1 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to... | |
| CGHV96050F2 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to... | |
| CGHV96100F2 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to... | |
| CGHV96130F is a gallium nitride (GaN) High Electron Mobility Transistor(HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FEToffers excellent power added efficiency in comparison to other technologies. | |
| Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large-signal, common-source amplifier... | |
| Designed for mobile two--way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and broadband performance of these devices make them ideal for large--signal, common source... | |
| Designed for mobile two--way radio applications with frequencies from 764 to 941 MHz. The high gain, ruggedness and broadband performance of these devices make them ideal for large--signal, common source... | |
| Gold metallized multi-purpose silicon DMOS RF FET 15W 12.5V 500 MHz push-pull | |
| GTVA107001EC is a 700-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 960 to 1215 MHz frequency band. It features input matching, high efficiency, and thermally-enhanced... | |
| GTVA126001EC is a 600-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 1200 to 1400 MHz frequency band. It features input matching, high efficiency, and thermally-enhanced... | |
| High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET. Designed for handheld two--way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device makes... | |
| L-BAND-AVIONICS-2400 W TRANSISTOR | |
| L-BAND-AVIONICS-5000 W TRANSISTOR | |
| N-Channel Enhancement-Mode Lateral MOSFET. This 1.5 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 2700 MHz. | |
| N-Channel Enhancement-Mode Lateral MOSFET. This 100 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz. | |
| N-Channel Enhancement-Mode Lateral MOSFET. This 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz. | |
| New Product! BeO-free package, only 0.2 0C/W thermal resistance. 300W, 16dB gain @ 175MHz | |
| RF MOSFET performance can be severely limited by the driver selection. The DRF1400A and B are half bridge hybrids with symmetrically orientated leads so that the two can easily be... | |
| RF Power LDMOS Transistor. Designed for handheld two--way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal... | |
| RF Power LDMOS Transistor. This 100 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz | |
| RF Power Mosfet. N-Channel Push - Pull Pair. The ARF477FL is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull... | |
| Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the... | |
| The 0912GN-250V is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 18dB gain, 250 Watts of pulsed RF output power at 128... | |
| The 0912GN-300V is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 19dB gain, 300 Watts of pulsed RF output power at 128us... | |
| The 0912GN-500LV is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 16dB gain, 500 Watts of pulsed RF output power at 450μs... | |
| The 0912GN-650V is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 17dB gain, 650 Watts of pulsed RF output power at 128μs... | |
| The 1011GN-1200V is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 18.5 dB gain, 1200 Watts of pulsed RF output power at... | |
| The 1011GN-125E is an internally matched, common source, Class AB, GaN on SiC HEMT transmitter driver transistor capable of providing over 18.5 dB power gain and 125 W of pulsed... | |
| The 1011GN-125EL is an internally matched, common source, Class AB, GaN on SiC HEMT transmitter driver transistor capable of providing over 18.5 dB power gain and 125 W of pulsed... | |
| The 1012GN-800V is an internally matched, COMMON SOURCE, class AB GaN on SiC high power transistor specifically designed for 20us, 6% duty cycle radar systems. It is capable of providing... | |
| The 1030/1090MHz, 50V or 52V 1011GN-1600VG is an internally matched, common source, class AB, GaN on SiC HEMT transistor capable of providing greater than 1600 Watts of pulsed output power... | |
| The 1214GN-120E is an internally matched, common source, Class AB, GaN on SiC HEMT transistor capable of providing over 17 dB typical power gain, 120 W of pulsed RF output... | |
| The 1214GN-400LV is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 16dB gain, 400 Watts of pulsed RF output power at 4.5ms... | |
| The 1214GN-600VHE is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 16.9dB gain, 60% drain efficiency, 600 Watts of pulsed RF output... | |
| The 1214GN-700V is an internally matched, common-source, class-AB GaN-on-SiC HEMT transistor capable of providing over 18 dB gain, 700 W of pulsed RF output power at 300 us pulse width,... | |
| The 2729GN-300V is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor. The hermetically sealed 2729GN-300V transistor is designed for S-band pulsed surveillance radar applications and uses... | |
| The A5G07H800W19 is a 112 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of... | |
| The A5G08H800W19 is a 112 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of... | |
| The A5G18H610W19N is an 85 W asymmetrical Doherty RF power GaN transistor designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805... | |
| The A5G19H605W19N is an 85 W asymmetrical Doherty RF power GaN transistor designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1930... | |
| The A5G21H605W19 is a 85 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of... | |
| The A5G26H605W19N is an 85 W asymmetrical Doherty RF power GaN transistor designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496... | |
| The ARF1500 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz. | |
| The ARF1505 is an RF power transistor designed for off-line 300V operation in very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40... | |
| The ARF1510 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and... | |
| The ARF1511 is four RF power transistor arranged in an H-Bridge confi guration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator... | |
| The ARF1519 is an RF power transistor designed for very high power scienti fi c, commercial, medical and industrial RF power generator and amplifier applications up to 25 MHz. | |
| The ARF300 is a N-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at... | |
| The ARF446 comprise a symmetric pair of common source RF power transistor designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. | |
| The ARF447 comprise a symmetric pair of common source RF power transistor designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. | |
| The ARF460A comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65MHz. They have been... | |
| The ARF460B comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65MHz. They have been... | |
| The ARF463AG comprises a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. It has... | |
| The ARF463AP1 comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 100MHz. They have been... | |
| The ARF463BG comprises a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. It has... | |
| The ARF463BP1 comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 100MHz. They have been... | |
| The ARF465A comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 60 MHz. | |
| The ARF465B comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 60 MHz. | |
| The ARF466A comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 45 MHz. They have... | |
| The ARF466B comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 45 MHz. They have... | |
| The ARF466FL is a rugged high voltage RF power transistor designed for scientific, commercial, medical and industrial RF power amplifier applications up to 45 MHz. It has been optimized for... | |
| The ARF475FL is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and... | |
| The ARF476FL is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and... | |
| The CGHV27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) which offers high efficiency, high gain and wide bandwidth capabilities. The CGHV27030S GaN HEMT devices are ideal... | |
| The CHK015AaQIA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited... | |
| The CHK5010-99F is a 4W GaN on SiC High Electron Mobility Transistor (HEMT). The CHK5010-99F offers a general purpose and broadband solution for a variety of RF power applications. The... | |
| The CHK8013-99F is a 14W Gallium Nitride High Electron Mobility Transistor. This product offers a general purpose and broadband solution for a variety of RF power applications such as radar... | |
| The CHK8015-99F is a 16W Gallium Nitride on Silicon Carbide (GaN on SiC) High Electron Mobility Transistor (HEMT). This product offers a general purpose and broadband solution for a variety... | |
| The CHK8101-SYC is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited... | |
| The CHK8101a99F is a 20W Gallium Nitride High Electron Mobility Transistor. This product offers a general purpose and broadband solution for a variety of RF power applications such as radar... | |
| The CHK8201-SYA is an unmatched power bar microwave transistor, which integrates two CHK8101A-99F/00 power bars packaged together with individual access possible, that produces 45W of combined output power. The CHK8201-SYA... | |
| The CHK9013-99F is a 85W Gallium Nitride High Electron Mobility Transistor. This product offers a general purpose and broadband solution for a variety of RF power applications such as radar... | |
| The CHK9014-99F is a 55W Gallium Nitride High Electron Mobility Transistor. This product offers a general purpose and broadband solution for a variety of RF power applications such as radar... | |
| The CHKA011aSXA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited... | |
| The CHKA012a99F is a 140W Gallium Nitride High Electron Mobility Transistor. This product offers a general purpose and broadband solution for a variety of RF power applications such as radar... | |
| The CHKA012bSYA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. This power bar offers general purpose and broadband solutions for a variety of RF power applications. It is... | |
| The CHZ015A-QEG is an input matched packaged Gallium Nitride High Electron Mobility Transistor. It allows broadband solutions for a variety of RF power applications in L-band. The circuit is well... | |
| The CHZ180AaSEB is an input matched and output pre-matched packaged Gallium Nitride High Electron Mobility Transistor. It allows broadband solutions for a variety of RF power applications in L-band. It... | |
| The CHZ8012-QJA is an S-Band Quasi-MMIC Power Amplifier based on GaN power bar and GaAs input and output matching circuits. The CHZ8012-QJA is fully matched on 50 Ohms. It can... | |
| The CHZ9012-QFA is an S-Band Quasi-MMIC High Power Amplifier based on GaN power bar and GaAs input and output matching circuits. It is fabricated using UMS 0.25µm GaN on SiC... | |
| The DC35-15-D3 is an unmatched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 18dB gain, 15 Watts of RF output power across the 30-3500 MHz... | |
| The DC35GN-15-Q4 is a COMMON SOURCE, class -AB, GaN on SiC HEMT transistor capable of broadband pulsed and CW RF power applications. This transistor utilizes gold metallization, air-cavity Cu-base QFN... | |
| The DRF1200 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and Non-Inverting. It was designed to provide the system... | |
| The DRF1201 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and Non-Inverting. It was designed to provide the system... | |
| The DRF1203 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and Non-Inverting. It was designed to provide the system... | |
| The DRF1300 is a push-pull hybrid containing two high power gate drivers and two power MOSFETs. It was designed to provide the system designer increased flexibility, higher performance, and lowered... | |
| The DRF1301 is a push-pull hybrid containing two high power gate drivers and two power MOSFETs. It was designed to provide the system designer increased flexibility, higher performance, and lowered... | |
| The GRF0020 is a 30W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 7.0GHz on a 50V supply rail. The wide bandwidth of the GRF0020 makes it suitable... | |
| The GRF0020D is a 30W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 7GHz on a 50V supply rail. The wide bandwidth of the GRF0020D makes it suitable... | |
| The GRF0030 is a 50W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 6.0GHz on a 50V supply rail. The wide bandwidth of the GRF0030 makes it suitable... | |
| The GRF0030D is a 50W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 6.0GHz on a 50V supply rail. The wide bandwidth of the GRF0030D makes it suitable... | |
| The GTRA184602FC is a 460-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a... | |
| The GTRA262802FC is a 250-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency,... | |
| The GTRA263902FC is a 370-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a... | |
| The GTRA362002FC is a 200-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and... | |
| The GTRA362802FC is a 280-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and... | |
| The GTRA364002FC is a 400-watt (PSAT) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and... | |
| The GTRA374902FC is a 450-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a... | |
| The GTRA384802FC is a 400-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input and output matching, high efficiency,... | |
| The GTRB097152FC-V1 is a 900-watt (P4dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features high efficiency, and a thermally-enhanced... | |
| The GTRB264318FC is a 400-watt (P3dB) GaN on Sic high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features internal matching, high efficiency, and a... | |
| The GTRB267008FC-V1 is a 620-watt (P4dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in Doherty cellular power amplifier applications. It features high linearized efficiency across 2496... | |
| The GTRB384608FC-V1 is a 440-watt (P3dB), GaN on SiC high electron mobility transistor (HEMT) designed for use in frequency band n78 cellular amplifiers applications. Featuring an Asymmetric Doherty Design, the... | |
| The GTVA101K42EV is a 1400-watt GaN on SiC high electron mobility transistor (HEMT) for use in avionics transponder applications. It is a input matched, highefficiency device in a thermally-enhanced package... | |
| The GTVA104001FA is a 400-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 960 to 1215 MHz frequency band. It features input matching, high efficiency, and... | |
| The GTVA212701FA is a 270-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 2110 to 2200 MHz frequency band. It features input matching, high efficiency, and... | |
| The GTVA220701FA is a 70-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a... | |
| The GTVA261701FA is a 170-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a... | |
| The GTVA261802FC is a 170-watt GaN on SiC high electron mobility transistor for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package... | |
| The GTVA262701FA is a 270-watt GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced... | |
| The GTVA262711FA is a 300-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a... | |
| The GTVA263202FC is a 340-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a... | |
| The MDS800 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems at 1090 MHz, with the pulse width and duty required for MODE-S applications. The... | |
| The MS2213 is a silicon NPN bipolar device specifically designed for JTIDS pulsed power applications from 960-1215 MHz. Gold metallization and emitter ballasting assure high reliability under Class C amplifier... | |
| The TPR 700 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for... | |
| These 1.5 watt RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 1805 to 2690 MHz. | |
| This 1.26 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz. | |
| This 107 W asymmetrical Doherty RF power LDMOS transistor is designedfor cellular base station applications covering the frequency range of 720 to960 MHz. | |
| This 112 W asymmetrical Doherty RF power LDMOS transistor is designedfor cellular base station applications covering the frequency range of 616 to870 MHz. | |
| This 13.5 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 3600 to 3800... | |
| This 15 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690... | |
| This 15.1 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 3300 to 3700... | |
| This 18 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 3300 to 3700... | |
| This 2 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 960 MHz. | |
| This 24 dBm RF power GaN transistor is designed for cellular base station applications covering the frequency range of 2496 to 2690 MHz. | |
| This 27 dBm RF power GaN transistor is designed for cellular base station applications covering the frequency range of 2496 to 2690 MHz. | |
| This 27 dBm RF power GaN transistor is designed for cellular base station applications covering the frequency range of 3300 to 3800 MHz. | |
| This 65 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 716 to 960 MHz. | |
| This 7.6 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 3400 to 3600... | |
| This 71 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 to 2200... | |
| This 79 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz. | |
| This 8 W symmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 100 to 2690... | |
| This 8.8 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2300 to 2400... | |
| This 87 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 to 2200... | |
| This 93 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 716 to 960 MHz. | |
| This 93W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1452 to 1511 MHz. | |
| This RF power GaN transistor is designed for cellular base station applications covering the frequency range of 3300 to 4300 MHz. | |
| This RF power transistor is designed for applications operating at frequencies between 2700 and 3100 MHz. This device is suitable for use in pulse applications. | |
| This RF power transistor is designed for pulse applications operating at 1030 to 1090 MHz and can be used over the 960 to 1215 MHz band at reduced power. This... | |
| This RF power transistor is designed for pulse applications operating at frequencies from 960 to 1215 MHz, such as distance measuring equipment (DME), secondary radars and high power transponders for... | |
| TRANSISTOR-AVIONICS- 800W | |
| With Littelfuse’s August 2021 notification that they have transitioned their DE475-102N21A to an end of life status, consider Microchip’s ARF1501 as a direct cross and option to continue your existing... | |
| With Littelfuse’s August 2021 notification that they have transitioned their IXFH6N100F to an end of life status, consider Microchip’s ARF461AG/BG as a direct cross and option to continue your existing... |
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