Richardson RFPD Datasheets for RF Transistors

RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors.
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Product Name	Notes
RF Power Transistor -- BUL54A	Advanced distributed base design high voltage, high speed NPN, Silicon Power Transistor
RF Power Transistor -- CG2H30070F	CG2H30070F is an internally matched gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H30070F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety...
RF Power Transistor -- CG2H40010F	CG2H40010F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40010F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
RF Power Transistor -- CG2H40010P	CG2H40010P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40010P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
RF Power Transistor -- CG2H40025F	CG2H40025F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40025F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
RF Power Transistor -- CG2H40025P	CG2H40025P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40025P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
RF Power Transistor -- CG2H40035F RF Power Transistor -- CG2H40035P	CG2H40035 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40035, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
RF Power Transistor -- CG2H40045F	CG2H40045F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40045F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
RF Power Transistor -- CG2H40045P	CG2H40045P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40045P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
RF Power Transistor -- AFT05MS003NT1	Designed for handheld two-way radio applications with frequencies from 1.8 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large-signal, common-source amplifier...
RF Power Transistor -- AFM906NT1	Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large-signal, common-source amplifier...
RF Power Transistor -- AFT05MS031GNR1 RF Power Transistor -- AFT05MS031NR1	Designed for mobile two--way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and broadband performance of these devices make them ideal for large--signal, common source...
RF Power Transistor -- AFT05MP075GNR1 RF Power Transistor -- AFT05MP075NR1	Designed for mobile two--way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and wideband performance of these devices make them ideal for large--signal, common source...
RF Power Transistor -- AFT09MS031GNR1 RF Power Transistor -- AFT09MS031NR1	Designed for mobile two--way radio applications with frequencies from 764 to 941 MHz. The high gain, ruggedness and broadband performance of these devices make them ideal for large--signal, common source...
RF Power Transistor -- A3T09S100NR1	Designed for two-way radio applications with frequencies from 136 to941 MHz. The high gain, ruggedness and wideband performance of thisdevice make it ideal for large-signal, common-source amplifier applications inradio equipment.
RF Power Transistor -- 2731GN-400V	For S-band pulsed radar applications, with typically over 14dB gain, the 2731GN-400V is an internally matched, common source, class AB, GaN on SiC HEMT transistor capable of delivering more than...
RF Power Transistor -- AFT09MS007NT1	High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET. Designed for handheld two--way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device makes...
RF Power Transistor -- AFT05MS006NT1	High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET. Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make...
RF Power Transistor -- AFT09MS015NT1	High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET. Designed for mobile two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make...
RF Power Transistor -- AFT21S230SR5	HV9 2.1GHZ 230W NI780S-6
RF Power Transistor -- AFT21S230SR3	N--Channel Enhancement--Mode Lateral MOSFET. These 50 watt RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz. applications covering the...
RF Power Transistor -- AFT18S230SR3	N--Channel Enhancement--Mode Lateral MOSFET. This 50 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz.
RF Power Transistor -- AFT20P060-4NR3	N--Channel Enhancement--Mode Lateral MOSFET
RF Power Transistor -- AFT27S010NT1	N-Channel Enhancement-Mode Lateral MOSFET. This 1.26 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.
RF Power Transistor -- AFT20S015GNR1	N-Channel Enhancement-Mode Lateral MOSFET. This 1.5 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 2700 MHz.
RF Power Transistor -- AFV09P350-04NR3	N-Channel Enhancement-Mode Lateral MOSFET. This 100 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz.
RF Power Transistor -- AFT26P100-4WGSR	N-Channel Enhancement-Mode Lateral MOSFET. This 22 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range...
RF Power Transistor -- AFT20P140-4WNR3	N-Channel Enhancement-Mode Lateral MOSFET. This 24 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range...
RF Power Transistor -- A2T26H160-24SR3	N-Channel Enhancement-Mode Lateral MOSFET. This 28 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2496 to 2690 MHz.
RF Power Transistor -- AFT27S006NT1	N-Channel Enhancement-Mode Lateral MOSFET. This 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.
RF Power Transistor -- A2T07D160W04SR3	N-Channel Enhancement-Mode Lateral MOSFET. This 30 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range...
RF Power Transistor -- AFT21S140W02GS3 RF Power Transistor -- AFT21S140W02SR3	N-Channel Enhancement-Mode Lateral MOSFET. This 32 W RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110...
RF Power Transistor -- AFT23H2004S2LR6	N-Channel Enhancement-Mode Lateral MOSFET. This 45 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2300 to 2400 MHz.
RF Power Transistor -- AFT26H200W03SR6	N-Channel Enhancement-Mode Lateral MOSFET. This 45 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range...
RF Power Transistor -- AFT26H250-24SR6	N-Channel Enhancement-Mode Lateral MOSFET. This 50W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of...
RF Power Transistor -- AFT21H350W03SR6 RF Power Transistor -- AFT21H350W04GSR	N-Channel Enhancement-Mode Lateral MOSFET. This 63 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range...
RF Power Transistor -- AFT18P3504S2LR6	N-Channel Enhancement-Mode Lateral MOSFET. This 63 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz.
RF Power Transistor -- AFT26H160-4S4R3	RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET. This 32 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability...
RF Power Transistor -- AFT05MS004NT1	RF Power LDMOS Transistor. Designed for handheld two--way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal...
RF Power Transistor -- AFT09MP055GNR1	RF Power LDMOS Transistor. Designed for mobile two-way radio applications with frequencies from 764 to 941 MHz. The high gain, ruggedness and broadband performance of this devices make it ideal...
RF Power Transistor -- AFT18S230SR5	RF Power LDMOS Transistor. N--Channel Enhancement--Mode Lateral MOSFET. This 50 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880...
RF Power Transistor -- AFV09P350-04GNR	RF Power LDMOS Transistor. This 100 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz
RF Power Transistor -- AFT20P1404WGNR3	RF Power LDMOS Transistor. This 24 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range...
RF Power Transistor -- A2T07H310-24SR6	RF Power LDMOS Transistor. This 47 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 716 to 960 MHz.
RF Power Transistor -- AFT21S230-12SR3	RF Power LDMOS Transistor. This 50 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.
RF Power Transistor -- AFT21S220W02SR3	RF Power LDMOS Transistor. This 50 W RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110...
RF Power Transistor -- AFT21S240-12SR3	RF Power LDMOS Transistor. This 55 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.
RF Power Transistor -- AFT20P060-4GNR3	RF Power LDMOS Transistor. This 6.3 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 2170 MHz.
RF Power Transistor -- AFT23S160W02SR3	RF Power LDMOS Transistors N−Channel Enhancement−Mode Lateral MOSFETs. These 45 watt RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the...
RF Power Transistor -- AFT09H310-03SR6 RF Power Transistor -- AFT09H310-04GSR	RF Power LDMOS Transistors. N−Channel Enhancement−Mode Lateral MOSFETs. These 56 watt asymmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 920...
RF Power Transistor -- ARF477FL	RF Power Mosfet. N-Channel Push - Pull Pair. The ARF477FL is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull...
RF Power Transistor -- 0912GN-100LV RF Power Transistor -- 0912GN-120E RF Power Transistor -- 0912GN-120EL RF Power Transistor -- 0912GN-15E RF Power Transistor -- 0912GN-15EL RF Power Transistor -- 0912GN-50LE RF Power Transistor -- 0912GN-50LEL RF Power Transistor -- 1011GN-100V RF Power Transistor -- 1011GN-30E RF Power Transistor -- 1011GN-30EL RF Power Transistor -- 1014GN-100E RF Power Transistor -- 1014GN-100EL RF Power Transistor -- 1214GN-15E RF Power Transistor -- 1214GN-15EL RF Power Transistor -- 1214GN-50E RF Power Transistor -- 1214GN-50EL RF Power Transistor -- 1416GN-600V RF Power Transistor -- 2729GN-270V RF Power Transistor -- 2731GN-120V RF Power Transistor -- 2931-10MQGM RF Power Transistor -- 2N2857CSM RF Power Transistor -- 2N5913 RF Power Transistor -- 2N6439 RF Power Transistor -- 2N6439/SD RF Power Transistor -- 2N6439MP RF Power Transistor -- 3135GN-120V RF Power Transistor -- 3135GN-170 RF Power Transistor -- 3135GN-200V RF Power Transistor -- 4450GN-110V RF Power Transistor -- 5359GN-120V RF Power Transistor -- 64054H RF Power Transistor -- 64073 RF Power Transistor -- A2G26H280-04SR3 RF Power Transistor -- A2T18H455W23NR6 RF Power Transistor -- A2T18S165-12SR3 RF Power Transistor -- A2T18S260-12SR3 RF Power Transistor -- A2T21H450W19SR6 RF Power Transistor -- A2V07H400-04NR3 RF Power Transistor -- A2V09H400-04SR3 RF Power Transistor -- A2V09H525-04NR6 RF Power Transistor -- AFIC31025GNR1 RF Power Transistor -- AFM907NT1 RF Power Transistor -- AFT18H357-24SR6 RF Power Transistor -- AFT26HW050SR3 RF Power Transistor -- AFV141KGSR5 RF Power Transistor -- ARF449BG RF Power Transistor -- ARF468AG RF Power Transistor -- ARF468BG RF Power Transistor -- ARF469AG RF Power Transistor -- ARF469BG RF Power Transistor -- ARF479 RF Power Transistor -- BFX85	Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the...
RF Power Transistor -- 0405SC-1000M	The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR (SIT) capable of providing 1000 Watts of RF power from 406 to 450 MHz. The transistor...
RF Power Transistor -- 0405SC-1500M	The 0405SC-1500M is a Common Gate N-Channel DEPLETION MODE Class AB SILICON CARBIDE (SiC) STATIC INDUCTION TRANSISTOR (SIT) capable of providing 1500 Watts of RF power from 406 to 450...
RF Power Transistor -- 0510GN-25-CP	The 0510GN-25-CP is a COMMON SOURCE, class-AB, GaN on SiC HEMT transistor amplifier for 50MHz-1GHz broadband pulsed and CW RF power applications. The transistor is housed in a Ceramic SMT...
RF Power Transistor -- 0912GN-300V	The 0912GN-300V is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 19dB gain, 300 Watts of pulsed RF output power at 128us...
RF Power Transistor -- 0912GN-500LV	The 0912GN-500LV is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 16dB gain, 500 Watts of pulsed RF output power at 450μs...
RF Power Transistor -- 0912GN-650V	The 0912GN-650V is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 17dB gain, 650 Watts of pulsed RF output power at 128μs...
RF Power Transistor -- 1011GN-1000V	The 1011GN-1000V is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 19 dB gain, 1000 Watts of pulsed RF output power at...
RF Power Transistor -- 1011GN-1200V	The 1011GN-1200V is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 18.5 dB gain, 1200 Watts of pulsed RF output power at...
RF Power Transistor -- 1011GN-125E	The 1011GN-125E is an internally matched, common source, Class AB, GaN on SiC HEMT transmitter driver transistor capable of providing over 18.5 dB power gain and 125 W of pulsed...
RF Power Transistor -- 1011GN-125EL	The 1011GN-125EL is an internally matched, common source, Class AB, GaN on SiC HEMT transmitter driver transistor capable of providing over 18.5 dB power gain and 125 W of pulsed...
RF Power Transistor -- 1011GN-250EL	The 1011GN-250EL is an internally matched, common source, Class AB, GaN on SiC HEMT transistor/pallet amplifier capable of providing over 20.5 dB typical gain, 250 W of pulsed RF output...
RF Power Transistor -- 1011GN-800V	The 1011GN-800V is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 19 dB gain, 800 Watts of pulsed RF output power at...
RF Power Transistor -- 1012GN-1000V	The 1012GN-1000V is an internally matched, common-source, class-AB, GaN-on-SiC HEMT transistor capable of providing over 19 dB gain, 1000 W of pulsed RF output power at 32 μs, and 2%...
RF Power Transistor -- 1012GN-800V	The 1012GN-800V is an internally matched, COMMON SOURCE, class AB GaN on SiC high power transistor specifically designed for 20us, 6% duty cycle radar systems. It is capable of providing...
RF Power Transistor -- 1011GN-1600VG	The 1030/1090MHz, 50V or 52V 1011GN-1600VG is an internally matched, common source, class AB, GaN on SiC HEMT transistor capable of providing greater than 1600 Watts of pulsed output power...
RF Power Transistor -- 1214GN-120E	The 1214GN-120E is an internally matched, common source, Class AB, GaN on SiC HEMT transistor capable of providing over 17 dB typical power gain, 120 W of pulsed RF output...
RF Power Transistor -- 1214GN-120EL	The 1214GN-120EL is an internally matched, common source, Class AB, GaN on SiC HEMT transistor capable of providing over 17 dB typical power gain, 120 W of pulsed RF output...
RF Power Transistor -- 1214GN-180LV	The 1214GN-180LV is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 16.6dB gain, 180 Watts of pulsed RF output power at 3ms...
RF Power Transistor -- 1214GN-280LV	The 1214GN-280LV is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 15.5dB gain, 280 Watts of pulsed RF output power at 3ms...
RF Power Transistor -- 1214GN-400LV	The 1214GN-400LV is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 16dB gain, 400 Watts of pulsed RF output power at 4.5ms...
RF Power Transistor -- 1214GN-550V	The 1214GN-550V is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 17dB gain, 550 Watts of pulsed RF output power at 300us...
RF Power Transistor -- 1214GN-600VHE	The 1214GN-600VHE is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 16.9dB gain, 60% drain efficiency, 600 Watts of pulsed RF output...
RF Power Transistor -- 1214GN-650V	The 1214GN-650V is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 17dB gain, 650 Watts of pulsed RF output power at 150μs...
RF Power Transistor -- 1214GN-700V	The 1214GN-700V is an internally matched, common-source, class-AB GaN-on-SiC HEMT transistor capable of providing over 18 dB gain, 700 W of pulsed RF output power at 300 us pulse width,...
RF Power Transistor -- 1315GN-700V	The 1315GN-700V is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 17dB gain, 700 Watts of pulsed RF output power at 150μs...
RF Power Transistor -- 1416GN-120E	The 1416GN-120E is an internally matched, common source, Class AB, GaN on SiC HEMT transistor capable of providing over 17 dB typical power gain, 120 W of pulsed RF output...
RF Power Transistor -- 1416GN-120EL	The 1416GN-120EL is an internally matched, common source, Class AB, GaN on SiC HEMT transistor capable of providing over 17 dB typical power gain, 120 W of pulsed RF output...
RF Power Transistor -- 2729GN-150V	The 2729GN-150V is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 15.7dB gain, 150 Watts of pulsed RF output power across the...
RF Power Transistor -- 2729GN-270	The 2729GN-270 is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 14dB gain, 280 Watts of pulsed RF output power at 100µs pulse width,...
RF Power Transistor -- 2729GN-500V	The 2729GN-500V is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 14.5 dB gain, 500 Watts of pulsed RF output power across...
RF Power Transistor -- 2731GN-280LV	The 2731GN-280LV is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 14.77 dB gain, 280 Watts of pulsed RF output power at...
RF Power Transistor -- 3135GN-280LV	The 3135GN-280LV is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 13 dB gain, 280 Watts of pulsed RF output power at...
RF Power Transistor -- 3135GN-400V	The 3135GN-400V is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT S-band transistor capable of providing over 400 Watts output power under 200 uS pulse width, 20%...
RF Power Transistor -- 3942GN-120V	The 3942GN-120V is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 14 dB gain, 120 Watts of pulsed RF output power at...
RF Power Transistor -- 5359GN-70V	The 5359GN-70V is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 10 dB gain, 70 Watts of pulsed RF output power at...
RF Power Transistor -- ARF1500	The ARF1500 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.
RF Power Transistor -- ARF1501	The ARF1501 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.
RF Power Transistor -- ARF1505	The ARF1505 is an RF power transistor designed for off-line 300V operation in very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40...
RF Power Transistor -- ARF1510	The ARF1510 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and...
RF Power Transistor -- ARF1511	The ARF1511 is four RF power transistor arranged in an H-Bridge confi guration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator...
RF Power Transistor -- ARF1519G	The ARF1519 is an RF power transistor designed for very high power scienti fi c, commercial, medical and industrial RF power generator and amplifier applications up to 25 MHz.
RF Power Transistor -- ARF300	The ARF300 is a N-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at...
RF Power Transistor -- ARF446G	The ARF446 comprise a symmetric pair of common source RF power transistor designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz.
RF Power Transistor -- ARF447G	The ARF447 comprise a symmetric pair of common source RF power transistor designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz.
RF Power Transistor -- ARF448AG	The ARF448A comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz.
RF Power Transistor -- ARF449AG	The ARF449A comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 120 MHz.
RF Power Transistor -- ARF460AG	The ARF460A comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65MHz. They have been...
RF Power Transistor -- ARF460BG	The ARF460B comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65MHz. They have been...
RF Power Transistor -- ARF461AG	The ARF461A comprise a symmetric pair of common drain RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have...
RF Power Transistor -- ARF461BG	The ARF461B comprise a symmetric pair of common drain RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have...
RF Power Transistor -- ARF463AG	The ARF463AG comprises a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. It has...
RF Power Transistor -- ARF463AP1G	The ARF463AP1 comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 100MHz. They have been...
RF Power Transistor -- ARF463BG	The ARF463BG comprises a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. It has...
RF Power Transistor -- ARF463BP1G	The ARF463BP1 comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 100MHz. They have been...
RF Power Transistor -- ARF465AG	The ARF465A comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 60 MHz.
RF Power Transistor -- ARF465BG	The ARF465B comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 60 MHz.
RF Power Transistor -- ARF466AG	The ARF466A comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 45 MHz. They have...
RF Power Transistor -- ARF466BG	The ARF466B comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 45 MHz. They have...
RF Power Transistor -- ARF466FL	The ARF466FL is a rugged high voltage RF power transistor designed for scientific, commercial, medical and industrial RF power amplifier applications up to 45 MHz. It has been optimized for...
RF Power Transistor -- ARF475FL	The ARF475FL is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and...
RF Power Transistor -- ARF476FL	The ARF476FL is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and...
RF Power Transistor -- AFT20S015NR1	These 1.5 watt RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 1805 to 2690 MHz.
RF Power Transistor -- AFT21S232SR3	These 50 watt RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.
RF Power Transistor -- AFT27S012NT1	This 1.26 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.
RF Power Transistor -- A3G18H500-04SR3	This 107 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880...
RF Power Transistor -- A3V09H521-24SR6	This 107 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz.
RF Power Transistor -- A2V09H400-04NR3	This 107 W asymmetrical Doherty RF power LDMOS transistor is designedfor cellular base station applications covering the frequency range of 720 to960 MHz.
RF Power Transistor -- A3V07H600-42NR6	This 112 W asymmetrical Doherty RF power LDMOS transistor is designedfor cellular base station applications covering the frequency range of 616 to870 MHz.
RF Power Transistor -- AFG24S100HR5	This 125 W CW RF power transistor is optimized for wideband operation up to 2700 MHz and includes input matching for extended bandwidth performance. With its high gain and high...
RF Power Transistor -- A3G35H100-04SR3	This 14 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 3400 to 3600...
RF Power Transistor -- A2T18H100-25SR3	This 18 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1995 MHz.
RF Power Transistor -- A2T21H100-25SR3	This 18 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.
RF Power Transistor -- A2T08VD020NT1 RF Power Transistor -- A2T08VD021NT1	This 2 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 960 MHz.
RF Power Transistor -- A2T27S020GNR1 RF Power Transistor -- A2T27S020NR1	This 2.5 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 400 to 2700 MHz.
RF Power Transistor -- A2T18H160-24SR3	This 28 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz.
RF Power Transistor -- A2T23H160-24SR3	This 28 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2300 to 2400 MHz.
RF Power Transistor -- A2T20H160W04NR3	This 28 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1880 to 2025...
RF Power Transistor -- AFT23H160-25SR3	This 32 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2300 to 2400 MHz.
RF Power Transistor -- A2T26H165-24SR3	This 32 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2496 to 2690 MHz.
RF Power Transistor -- A2G22S160-01SR3	This 32 W RF power GaN transistor is designed for cellular base station applications covering the frequency range of 1800 to 2200 MHz. This part is characterized and performance is...
RF Power Transistor -- A2G35S160-01SR3	This 32 W RF power GaN transistor is designed for cellular base station applications covering the frequency range of 3400 to 3600 MHz. This part is characterized and performance is...
RF Power Transistor -- A2T18S160W31GS3	This 32 W RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1995 MHz.
RF Power Transistor -- A3G26H200W17SR3	This 34 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690...
RF Power Transistor -- A2T21H140-24SR3	This 36 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.
RF Power Transistor -- A2T21H141W24SR3	This 36 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 to 2200...
RF Power Transistor -- A2T21S160-12SR3	This 38 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.
RF Power Transistor -- A2T21S161W12SR3	This 38 W RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 to 2200 MHz.
RF Power Transistor -- A2G35S200-01SR3	This 40 W RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth covering the frequency range of 3400 to 3600 MHz.
RF Power Transistor -- A3G20S250-01SR3	This 45 W RF power GaN transistor is designed for cellular base station applications covering the frequency range of 1800 to 2200 MHz. This part is characterized and performance is...
RF Power Transistor -- A2G22S251-01SR3	This 48 W RF power GaN transistor is designed for cellular base station applications covering the frequency range of 1805 to 2200 MHz. This part is characterized and performance is...
RF Power Transistor -- A2G26H281-04SR3	This 50 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690...
RF Power Transistor -- AFT18S230-12NR3	This 50 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz.
RF Power Transistor -- AFT18S260W31GS3 RF Power Transistor -- AFT18S260W31SR3	This 50 W RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1995 MHz.
RF Power Transistor -- A2T23H200W23SR6	This 51 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2300 to 2400...
RF Power Transistor -- AFT09S220-02NR3	This 54 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 850 to 960 MHz.
RF Power Transistor -- A3G26H501W17SR3	This 56 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690...
RF Power Transistor -- A3T18H408W24SR3	This 56 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880...
RF Power Transistor -- A3T21H360W23SR6	This 56 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 to 2200...
RF Power Transistor -- A2T18S262W12NR3	This 56 W RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880 MHz.
RF Power Transistor -- A2T21S260W12NR3	This 56 W RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 to 2200 MHz.
RF Power Transistor -- A2T20H330W24SR6	This 58 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1880 to 2025...
RF Power Transistor -- A3G20S350-01SR3	This 59 W RF power GaN transistor is designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz. This part is characterized and performance is...
RF Power Transistor -- A2T26H300-24SR6	This 60 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2496 to 2690 MHz.
RF Power Transistor -- AFT18H357-24NR6	This 63 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz.
RF Power Transistor -- AFT18H356-24SR6	This 63 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1995 MHz.
RF Power Transistor -- A2T21H360-24SR6	This 63 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.
RF Power Transistor -- A2T21H360-23NR6	This 63 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2110 to 2200 MHz.
RF Power Transistor -- A3T18H360W23SR6	This 63 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880...
RF Power Transistor -- A3T23H300W23SR6	This 63 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2300 to 2400...
RF Power Transistor -- AFT18S290-13SR3	This 63 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1995 MHz.
RF Power Transistor -- A2T21S260-12SR3	This 65 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.
RF Power Transistor -- A2T09VD250NR1	This 65 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 716 to 960 MHz.
RF Power Transistor -- A2T23H300-24SR6	This 66 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2300 to 2400 MHz.
RF Power Transistor -- A2T18H410-24SR6	This 71 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz.
RF Power Transistor -- A3T18H400W23SR6	This 71 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880...
RF Power Transistor -- A2T21H410-24SR6	This 72 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.
RF Power Transistor -- A3G22H400-04SR3	This 79 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring wide instantaneous bandwidth capability covering the frequency range of 1800 to 2200 MHz.
RF Power Transistor -- A2V09H300-04NR3	This 79 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz.
RF Power Transistor -- A2T09VD300NR1	This 79 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 716 to 960 MHz.
RF Power Transistor -- A3G26D055NT4	This 8 W symmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 100 to 2690...
RF Power Transistor -- AFT09S282NR3	This 80 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz.
RF Power Transistor -- A3T19H455W23SR6	This 81 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1930 to 1990...
RF Power Transistor -- A3T18H455W23SR6	This 87 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880...
RF Power Transistor -- A3T21H450W23SR6 RF Power Transistor -- A3T21H455W23SR6 RF Power Transistor -- A3T21H456W23SR6	This 87 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 to 2200...
RF Power Transistor -- A2T18H450W19SR6	This 89 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880...
RF Power Transistor -- A2T09D400-23NR6	This 93 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 716 to 960 MHz.
RF Power Transistor -- A2T14H450-23NR6	This 93W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1452 to 1511 MHz.
RF Power Transistor -- AFV141KHR5	This RF power device is designed for commercial applications operating at frequencies from 1200 to 1400 MHz such as commercial L-Band radars. The device is suitable for use in pulse...
RF Power Transistor -- AFT31150NR5	This RF power transistor is designed for applications operating at frequencies between 2700 and 3100 MHz. This device is suitable for use in pulse applications.
RF Power Transistor -- AFV10700GSR5 RF Power Transistor -- AFV10700HR5 RF Power Transistor -- AFV10700HSR5	This RF power transistor is designed for pulse applications operating at 1030 to 1090 MHz and can be used over the 960 to 1215 MHz band at reduced power. This...
RF Power Transistor -- AFV121KGSR5 RF Power Transistor -- AFV121KHR5 RF Power Transistor -- AFV121KHSR5	This RF power transistor is designed for pulse applications operating at frequencies from 960 to 1215 MHz, such as distance measuring equipment (DME), secondary radars and high power transponders for...

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Other Datasheet Catalogs for Richardson RFPD