Microchip Technology, Inc. RF & MW LNA MMA044AA

Description
The MMA044AA is a gallium arsenide (GaAs) pseudomorphic high-electron mobility transistor (pHEMT) monolithic microwave integrated circuit (MMIC) low-noise wideband amplifier die that operates between 6 GHz and 18 GHz. The MMA044AA die provides 21 dB of small signal gain, 1.7 dB noise figure, and output IP3 of 30 dBm, while requiring only 102 mA from a 4 V supply. The P1dB output power of 17 dBm enables the LNA to function as an LO driver for balanced, in-phase quadrature (I/Q), or image reject mixers. The MMA044AA amplifier also features RF ports that are DC blocked and internally matched to 50 Ω, which allows for easy integration into multi-chip modules (MCMs).
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Description
The MMA044AA is a gallium arsenide (GaAs) pseudomorphic high-electron mobility transistor (pHEMT) monolithic microwave integrated circuit (MMIC) low-noise wideband amplifier die that operates between 6 GHz and 18 GHz. The MMA044AA die provides 21 dB of small signal gain, 1.7 dB noise figure, and output IP3 of 30 dBm, while requiring only 102 mA from a 4 V supply. The P1dB output power of 17 dBm enables the LNA to function as an LO driver for balanced, in-phase quadrature (I/Q), or image reject mixers. The MMA044AA amplifier also features RF ports that are DC blocked and internally matched to 50 Ω, which allows for easy integration into multi-chip modules (MCMs).
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Suppliers

Company
Product
Description
Supplier Links
RF & MW LNA - MMA044AA - Richardson RFPD
Downers Grove, IL, United States
RF & MW LNA
MMA044AA
RF & MW LNA MMA044AA
The MMA044AA is a gallium arsenide (GaAs) pseudomorphic high-electron mobility transistor (pHEMT) monolithic microwave integrated circuit (MMIC) low-noise wideband amplifier die that operates between 6 GHz and 18 GHz. The MMA044AA die provides 21 dB of small signal gain, 1.7 dB noise figure, and output IP3 of 30 dBm, while requiring only 102 mA from a 4 V supply. The P1dB output power of 17 dBm enables the LNA to function as an LO driver for balanced, in-phase quadrature (I/Q), or image reject mixers. The MMA044AA amplifier also features RF ports that are DC blocked and internally matched to 50 Ω, which allows for easy integration into multi-chip modules (MCMs).

The MMA044AA is a gallium arsenide (GaAs) pseudomorphic high-electron mobility transistor (pHEMT) monolithic microwave integrated circuit (MMIC) low-noise wideband amplifier die that operates between 6 GHz and 18 GHz. The MMA044AA die provides 21 dB of small signal gain, 1.7 dB noise figure, and output IP3 of 30 dBm, while requiring only 102 mA from a 4 V supply. The P1dB output power of 17 dBm enables the LNA to function as an LO driver for balanced, in-phase quadrature (I/Q), or image reject mixers. The MMA044AA amplifier also features RF ports that are DC blocked and internally matched to 50 Ω, which allows for easy integration into multi-chip modules (MCMs).

Supplier's Site
Futian, China
RF and Wireless - RF Amplifiers
MMA044AA
RF and Wireless - RF Amplifiers MMA044AA
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Supplier's Site

Technical Specifications

  Richardson RFPD Shenzhen Shengyu Electronics Technology Limited
Product Category RF Amplifiers RF Amplifiers
Product Number MMA044AA MMA044AA
Product Name RF & MW LNA RF and Wireless - RF Amplifiers
Amplifier Type Low Noise Amplifier
Frequency Range 6000 to 18000 MHz 6000 to 18000 MHz
Maximum Gain 21 dB 21.4 dB
Output Power 17 dBm
Noise Figure 1.7 dB
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