Richardson RFPD Datasheets for RF Diodes
RF diodes are designed to handle high-power radio frequency (RF) signals in stereo amplifiers, radio transmitters, television monitors, and other RF or microwave devices.
RF Diodes: Learn more
| Product Name | Notes |
|---|---|
| DME, DMF, DMJ Series: Silicon Beam-Lead Schottky Mixer Diodes—Singles, Pairs and Quads Bondable and Packaged Chips | |
| DSG9500-000: Planar Beam Lead PIN Diode | |
| Dual Diode - Connected (Anti-Parallel) Configuration: MACOM's MA4E1317 single, MA4E1318 anti-parallel pair, MA4E1319-1 reverse tee, MA4E1319-2 series tee and MA4E2160 unconnected anti-parallel pair are gallium arsenide flip chip Schottky barrier... | |
| Dual Diode - Connected (Anti-Parallel) Configuration: MACOM's MA4E2037 single, MA4E2039 anti-parallel pair and MA4E2040 series tee are gallium arsenide beam lead Schottky barrier diodes. These devices are fabricated on OMCVD... | |
| Dual Diode - Connected (Anti-Parallel) Configuration: The MA4E2508 SURMOUNT™ Anti-Parallel Diode Series are Silicon Low, Medium, & High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC)... | |
| Dual Diode - Reverse Series Pair (Reverse Tee) Configuration: MACOM's MA4E1317 single, MA4E1318 anti-parallel pair, MA4E1319-1 reverse tee, MA4E1319-2 series tee and MA4E2160 unconnected anti-parallel pair are gallium arsenide flip... | |
| Dual Diode - Reverse Series Pair (Reverse Tee) Configuration: The MA4E2054 series are low barrier n-type silicon Schottky diodes assembled in low cost surface mount plastic packages. They are designed... | |
| Dual Diode - Reverse Series Pair (Reverse Tee) Configuration: The MA4E2200 series are Silicon zero bias P-type detector diodes assembled in low cost surface mount plastic packages. They are designed... | |
| Dual Diode - Reverse Series Pair (Reverse Tee) Configuration: The MA4E2513L-1289 SURMOUNT™ Diodes are Silicon Low Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC... | |
| Dual Diode - Series Pair (Tee) Configuration: The MA4E1317 single, MA4E1318 anti-parallel pair, MA4E1319-1 reverse tee, MA4E1319-2 series tee and MA4E2160 unconnected anti-parallel pair are gallium arsenide flip chip Schottky... | |
| Dual Diode - Series Pair (Tee) Configuration: The MA4E1338 series is a silicon medium barrier Schottky diode suitable for use in mixer, detector and limiter circuits. These diodes are also... | |
| Dual Diode - Series Pair (Tee) Configuration: The MA4E1339 series is a silicon medium barrier Schottky diode suitable for use in mixer, detector and limiter circuits. These diodes are also... | |
| Dual Diode - Series Pair (Tee) Configuration: The MA4E1340 series is a silicon medium barrier schottky diode suitable for use in mixer, detector and limiter circuits. These diodes are also... | |
| Dual Diode - Series Pair (Tee) Configuration: The MA4E2040 series tee are gallium arsenide beam lead Schottky barrier diodes. These devices are fabricated on OMCVD epitaxial wafers using a process... | |
| Dual Diode - Series Pair (Tee) Configuration: The MA4E2054 series are low barrier n-type silicon Schottky diodes assembled in low cost surface mount plastic packages. They are designed for use... | |
| Dual Diode - Series Pair (Tee) Configuration: The MA4E2200 series are Silicon zero bias P-type detector diodes assembled in low cost surface mount plastic packages. They are designed for usage... | |
| Dual Diode - Series Pair (Tee) Configuration: The MA4E2514 SURMOUNT™ Diode Tee Series are Silicon Low, and Medium Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC)... | |
| Mesa Beam Lead PIN Diode | |
| Quad Diode Cross-Over Configuration: The MA4E2544L-1282 Series SurMount™ Low Barrier, Silicon Schottky Cross-Over Quad Diodes are fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of... | |
| Quad Diode Ring Configuration: The MA4E2532-1113 Series SURMOUNT™ Low and Medium Barrier, Silicon Schottky Ring Quad Diodes are fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits... | |
| Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the... | |
| Silicon Beamless Schottky Diodes—Pairs and Quads | |
| Silicon Beamless Schottky Diodes-Pairs and Quads | |
| Silicon Limiter Diodes, Packaged and Bondable Chips | |
| Silicon PIN Diode Chips | |
| Silicon Schottky Barrier Diodes: Packaged, Bondable Chips and Beam-Leads | |
| Silicon Schottky Diode Chip | |
| Silicon Schottky Diode Chips | |
| Single Diode Configuration: Gallium Arsenide PIN diodes offer improved performance characteristics over silicon in many microwave semiconductor applications These benefits result from the intrinsic semiconductor properties of GaAs. Its inherent... | |
| Single Diode Configuration: MA4AGBLP912 is an Aluminum-Gallium- Arsenide anode enhanced, beam lead PIN diode. AlGaAs anodes, which utilize MACOM's patent pending hetero-junction technology, produce less diode On resistance than conventional... | |
| Single Diode Configuration: MA4AGP907 and MA4AGFCP910 are Aluminum Gallium Arsenide (AlGaAs) flip-chip PIN diodes. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity... | |
| Single Diode Configuration: MA4FCP Series consists of Silicon Flip Chip PIN diodes fabricated with MACOM's patented HMIC process. This diode is fabricated on epitaxial wafers using a process designed for... | |
| Single Diode Configuration: MA4FCP200 series is a silicon flip chip PIN diode fabricated with MACOM's patented HMICO process. This diode is fabricated on epitaxial wafers using a process designed for... | |
| Single Diode Configuration: MA4GP907 is a Gallium Arsenide Flip-Chip PIN diode. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low... | |
| Single Diode Configuration: MACOM offers a comprehensive line of low capacitance, planar and mesa, silicon PIN diode chips which use ceramic glass and silicon nitride passivation technology. The Silicon PIN... | |
| Single Diode Configuration: MACOM offers four families of low cost surface mount gallium arsenide tuning varactors. All families have silicon nitride protected junctions for low leakage current and high reliability. | |
| Single Diode Configuration: MACOM produces a series of silicon PIN limiter diodes with small and medium I-region lengths which are specifically designed for high signal applications. The devices are designed... | |
| Single Diode Configuration: MACOM's MA46H120 series is a gallium arsenide flip chip hyper abrupt varactor diode. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high... | |
| Single Diode Configuration: MACOM's MA4AGP907 and MA4AGFCP910 are Aluminum Gallium Arsenide (AlGaAs) flip-chip PIN diode. The device is fabricated on OMCVD epitaxial wafers using a process designed for high device... | |
| Single Diode Configuration: MACOM's MA4E1317 single, MA4E1318 anti-parallel pair, MA4E1319-1 reverse tee, MA4E1319-2 series tee and MA4E2160 unconnected anti-parallel pair are gallium arsenide flip chip Schottky barrier diodes. These devices... | |
| Single Diode Configuration: MACOM's MA4E2037 single, MA4E2039 anti-parallel pair and MA4E2040 series tee are gallium arsenide beam lead Schottky barrier diodes. These devices are fabricated on OMCVD epitaxial wafers using... | |
| Single Diode Configuration: MACOM's series of low and medium power glass PIN diodes are specifically designed for use in switches, duplexers, electrically tuned digital filters AGC attenuators, TR switches and... | |
| Single Diode Configuration: The diodes have low noise figure through 26 GHz. Low Barrier diodes for minimum LO drive. Stripline and microstrip mixers from 100 MHz Upconverters. | |
| Single Diode Configuration: The MA44781 is a silicon PIN diodes in surface mount packages. There are two sets of two PIN diode pairs constructed in opposing configurations. The package is... | |
| Single Diode Configuration: The MA45300 series of silicon abrupt junction tuning varactors has been designed to obtain the highest Q possible. All diodes in this series have a high density... | |
| Single Diode Configuration: The MA46450, MA46470 and MA46410 series of tuning varactors are hyperabrupt junction Gallium Arsenide diodes featuring constant gamma 1.0 (MA46450 series), 1.25 (MA46470 series) or 1.5 (MA46410... | |
| Single Diode Configuration: The MA46580, MA46585 and MA46H130 series of beam lead constant gamma tuning varactors are hyperabrupt junction gallium arsenide diodes with a constant gamma of 1.0 or 1.25. | |
| Single Diode Configuration: The MA46600 series of microwave tuning varactors is a family of abrupt junction gallium arsenide devices featuring Q factors in excess of 8000. This series is specifically... | |
| Single Diode Configuration: The MA4E1339 series is a silicon medium barrier Schottky diode suitable for use in mixer, detector and limiter circuits. These diodes are also usable in anti-parallel, shunt... | |
| Single Diode Configuration: The MA4E1340 series is a silicon medium barrier schottky diode suitable for use in mixer, detector and limiter circuits. These diodes are also suitable for usage in... | |
| Single Diode Configuration: The MA4E2054 series are low barrier n-type silicon Schottky diodes assembled in low cost surface mount plastic packages. They are designed for use as high performance mixer... | |
| Single Diode Configuration: The MA4E2054L-1261 diode is a low barrier, n-type, silicon Schottky device. It is useful as a high performance mixer or detector diode at frequencies from VHF through... | |
| Single Diode Configuration: The MA4E2200 series are Silicon zero bias P-type detector diodes assembled in low cost surface mount plastic packages. They are designed for usage in a wide variety... | |
| Single Diode Configuration: The MA4E2501L-1290 SurMount™ Diodes are Silicon Low Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which... | |
| Single Diode Configuration: The MA4E2502 SURMOUNT™ Series Diodes are Silicon Low, Medium, and High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist... | |
| Single Diode Configuration: This family of low capacitance Schottky diodes is designed to give superior performance in video detectors and power monitors from 100 MHz through 40 GHz. They have... | |
| Single Diode Configuration: This family of Zero Bias Detector (ZBD) diodes is designed for use in video detectors and power monitors eliminating the need to provide external DC Bias to... | |
| Single Diode Configuration: This series of M/ACOM semiconductor products is hermetically sealed strip-line package PIN diode designed to drop into a 50 ohm strip-line circuit without external matching. The MA47200... | |
| Single Diode Configuration: This Zero Bias Detector (ZBD) diode is suitable for use in microstrip or stripline detector circuits. The 4 mil diameter gold pad and sturdy construction allow you... | |
| Skyworks beam-lead silicon Schottky barrier mixer diodes are designed for applications through 40 GHz. The beam-lead design reduces the problem of bonding to the very small area characteristic of low... | |
| Skyworks CLA series of silicon limiter diodes provides passive receiver protection over a wide range of frequencies from 100 MHz to over 30 GHz. These devices use Skyworks well-established silicon... | |
| Surface Mount Limiter Diode | |
| The first is attenuators where current consumption is the most important design consideration. The second application for this series of diodes is in switches where low capacitance is the driving... | |
| The GC4700 series diodes are specially processed PIN diodes designed for use in passive or active limiters at frequencies through Ku band. Thirteen categories of devices are offered for flexibility... | |
| The high power PIN diode series is available in surface mount stud and insulated stud packages. These PIN diode chips utilize high resistivity material and an intrinsic float zone process... | |
| The HSMP-489x series products feature ultra low parasitic inductance. These products are specifically designed for use at frequencies which are much higher than the upper limit for conventional PIN diodes. | |
| The MA44700 series of Step Recovery diodes is designed for use in low power multipliers with output frequencies of up to 5 GHz. These Step Recovery diodes generate harmonics by... | |
| The MA4E2054 series are low barrier n-type silicon Schottky diodes assembled in low cost surface mount plastic packages. They are designed for use as high performance mixer and detector diodes. | |
| This series of Skyworks GaAs Schottky barrier flip-chip diodes produces excellent high frequency performance up to millimeter wave ranges in a mechanically robust, small form factor. These diodes are comprised... | |
| This silicon diode is packaged in a hermetic axial lead glass package. Various uses include detecting, mixing and switching at low power levels. It is suitable for commercial switching along... | |
| This SMT limiting diode driver element consists of a specially processed Schottky diode packaged in a convenient, low-cost plastic outline suitable for standard or co-planar microstrip circuits. Featuring lowloss, low... | |
| With high isolation, low loss, and low distortion characteristics, this Microsemi Power PIN diode is perfect for the high power switching applications where size and power handling capability are critical. | |
| Zero Bias Silicon Schottky Barrier Detector Diodes |
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