Richardson RFPD Datasheets for RF Amplifiers
RF amplifiers are devices that accept a varying input signal and produce an output signal that varies in the same way, but with larger amplitude.
RF Amplifiers: Learn more
| Product Name | Notes |
|---|---|
| Amplifier, CATV Return Path Differential 5 - 300 MHz. The MAAM-011156 is a GaAs single stage differential amplifier assembled in a lead-free 3 mm 16-lead PQFN plastic package. This amplifier... | |
| Broadband CATV Amplifier 50 - 1000 MHz. M/A-COM’s MAAM-007807 CATV amplifier is a GaAs MMIC which exhibits low distortion in a miniature lead-free surface mount package. The MAAM-007807 employs a... | |
| Differential CATV Variable Gain Amplifier 5 - 300 MHz. The MAAM-011186 is an integrated 2 stage differential amplifier with embedded digital step attenuator (DSA) assembled in a lead-free 7 mm... | |
| GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 0.3-20 GHz. The HMC1049LP 5E is a GaAs MMIC Low Noise Amplifier which operates between 0.3 and 20 GHz. This LNA provides 15 dB... | |
| ICONICRF’s ICP1044P is a 3 stage MMIC power amplifier in a 6x6mm QFN package, fabricated using GaN on SiC technology. ICP1044P operates from 7.9-11GHz delivering 30W of output power, with... | |
| ICP1543 is a 3 stage MMIC broadband high power amplifier fabricated using GaN on SiC technology. The ICP1543 achieves 43dBm of saturated output power over 12 to 18 GHz in... | |
| ICP2840 is a Balanced Ka Band MMIC power amplifier achieving 39dBm of saturated output power in CW operation. Fabricated using on GaN SiC technology, ICP2840 operates from 27.5 to 31... | |
| MAAM-007724 is a GaAs PHEMT MMIC amplifier in a lead-free 4 mm 20-lead PQFN package. The MMIC design is configured as a pair of cascade PHEMT amplifiers for broadband performance. | |
| MAAM-007796 is a GaAs PHEMT MMIC amplifier in a lead-free 4 mm 20-lead PQFN package. The Amplifier is designed to meet the high gain, high linearity and low noise requirements... | |
| MAAM-011238-DIE is an easy-to-use, wideband amplifier that operates from 100 kHz to 67.5 GHz. The amplifier provides 14 dB gain, 4.5 dB noise figure and 20 dBm of P3dB output... | |
| MAAM-011286-DIE is an easy-to-use, wideband amplifier that operates from 30 kHz to 44 GHz. The amplifier provides 16 dB gain, 22 dBm output power and 5.3 dB noise figure. It... | |
| MAAM26100 is a GaAs MMIC two stage high efficiency power amplifier. The MAAM26100 is a fully monolithic design which eliminates the need for external circuitry in 50-ohm systems. The MAAM26100... | |
| MAAM26100-B1 is a GaAs MMIC two stage high efficiency power amplifier in a small, lead-free, 7-lead ceramic package. The MAAM26100-B1 is a fully monolithic design which eliminates the need for... | |
| MAAM26100-P1 is a GaAs MMIC two stage high efficiency power amplifier in a lead-free high performance bolt down ceramic package. The MAAM26100-P1 is a fully monolithic design which eliminates the... | |
| MACOM designs, manufactures, and supports a wide variety of amplifiers for RF, microwave, and millimeter wave applications. We make broadband amplifiers, driver amplifiers, gain blocks, low noise amplifiers, and power... | |
| MACOM’s MAAM02350-A2 is a wide band, MMIC amplifier housed in a small, lead-free, 8-lead ceramic package. It includes two integrated gain stages and employs resistive feedback to obtain flat gain... | |
| MACOM’s MAAM28000 is a wide band, MMIC amplifier. It includes two distributed gain stages to obtain flat gain and a good, 50-ohm input and output impedance match over a very... | |
| MACOM's MAAM-008644 is a GaAs PHEMT MMIC amplifier in a lead-free 4 mm 20-lead PQFN package. The Amplifier is designed to meet the high gain, high linearity and low noise... | |
| MACOM's MAAM-009100 CATV amplifier is a GaAs MMIC which exhibits low distortion in a lead-free miniature surface mount plastic package. The MAAM-009100 employs a monolithic single stage design featuring a... | |
| MACOM's MAAM12000-A1 is a wide band, low noise, MMIC amplifier housed in a lead-free, small 8-lead ceramic package. It includes two integrated gain stages and employs series inductive feedback to... | |
| MACOM's MAAM28000-A1 is a wide band, MMIC amplifier housed in a small, lead-free, 8-lead ceramic package. It includes two distributed gain stages to obtain flat gain and a good, 50-ohm... | |
| MACOM's MAAM37000 die is a wide-band, low noise, MMIC amplifier. It includes two integrated gain stages and employs series inductive feedback to obtain excellent noise figure and a good 50-ohm,... | |
| MACOM's MAAM37000-A1 is a wide-band, low noise, MMIC amplifier housed in a small, lead-free, 8-lead ceramic package. It includes two integrated gain stages and employs series inductive feedback to obtain... | |
| Medium Power Amplifier, 71-86 GHz. The MAAM-011167 is a bare die power amplifier that operates from 71 - 86 GHz. The amplifier provides 18 dB small signal gain. The input... | |
| Microchip ICP1040P is a 2 stage MMIC power amplifier in 6mm package, fabricated using GaN on SiC technology. ICP1040P operates from 7.9-11GHz with 41dBm output power, 40% typical PAE and... | |
| Microchip’s ICP0349P is a 2 stage power amplifier, 50 ohm matched with integrated DC blocking capacitors packaged in a plastic QFN. Fabricated on a 0.25um GaN on SiC process, The... | |
| Miniature Broadband Gain Stage. MACOM Technology's MAAL-009120 broadband gain stage is a GaAs MMIC amplifier in a lead-free SC70-6LD (SOT-363) surface mount plastic package. The MAAL-009120 employs a monolithic 1-stage... | |
| Optical Node RF Amplifier 50 - 1000 MHz. The MAAM-010333 provides high gain, low noise and low distortion amplification for optical node applications. The MAAM-010333 is fabricated using M/A-COM Technology... | |
| RF Driver Amplifier; 250-4000 MHz. MACOM's MAAM-009560 RF driver amplifier is a GaAs MMIC which exhibits exceptional linearity performance over a >20 dB dynamic range, as well as featuring high... | |
| Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the... | |
| The A515 RF amplifier is a discrete hybrid design, which uses thin film manufacture process for accurate performance and high reliability. This 2 stage bipolar transistor feedback amplifier design displays... | |
| The HMC-ALH244 is a two stage GaAs MMIC HEMT Low Noise Amplifier die which operates between 24 and 40 GHz. The amplifier provides 12 dB of gain, a noise figure... | |
| The HMC-C004 is a GaAs MMIC PHEMT Distributed Driver Amplifier in a miniature, hermetic module with replaceable SMA connectors which operates between 10 MHz and 20 GHz. The self-biased amplifier... | |
| The HMC-C024 is a GaAs MMIC PHEMT Distributed Driver Amplifier in a miniature, hermetic module with replaceable SMA connectors which operates between 10 MHz and 20 GHz. The amplifier provides... | |
| The HMC-C026 is a GaAs MMIC pHEMT Distributed Power Amplifier in a miniature, hermetic module with replaceable SMA connectors which operates between 2 and 20 GHz. The amplifier provides 31... | |
| The HMC-C048 is a GaAs MMIC pHEMT Low Noise Amplifier in a miniature, hermetic module which operates between 5 and 9 GHz. This high dynamic range low noise amplifier module... | |
| The HMC-C072 is a GaAs HBT Ultra Low Noise Amplifier in a miniature, hermetic module designed to operate between 6 and 12 GHz. This high dynamic range amplifier module provides... | |
| The HMC-C088 is a Successive Detection Log Video Amplifier (SDLVA) which operates from 1 to 20 GHz. The HMC-C088 provides a logging range of 59 dB. This product comes standard... | |
| The HMC1049SCPZ-EP is a Gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), low noise amplifier (LNA) that operates between 0.3 GHz and 20 GHz. This LNA provides 14 dB of... | |
| The HMC1099PM5E is a gallium nitride (GaN), broadband power amplifier that delivers 10 W (40 dBm) with up to 60% power added efficiency (PAE) across an instantaneous bandwidth of 0.01... | |
| The HMC1114PM5E is a gallium nitride (GaN), broadband power amplifier delivering >10 W (up to 42 dBm) typical with up to 55% power added efficiency (PAE) across an instantaneous bandwidth... | |
| The HMC1126ACEZ is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), low noise amplifier that operates from 400 MHz to 52 GHz. The HMC1126ACEZ provides 12 dB of... | |
| The HMC1132PM5E is a four-stage, gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC) power amplifier. The device operates from 27 GHz to 32 GHz,... | |
| The HMC392A is a GaAs MMIC Low Noise Amplifier die which operates between 3.5 and 7.0 GHz. The amplifier provides 17.2 dB of gain, 1.7 dB noise figure, and 32.5... | |
| The HMC392ALC4 is a GaAs MMIC Low Noise Amplifier which operates between 3.5 and 8.0 GHz. Housed in a leadless 4x4 mm SMT package, this amplifier provides 17 dB of... | |
| The HMC5805ALS6 is a GaAs pHEMT MMIC Distributed Power Amplifier which operates between DC and 40 GHz. The amplifier provides 11.5 dB of gain, 29 dBm output IP3 and +24... | |
| The HMC625BLP5E is a digitally controlled variable gain amplifier which operates from DC to 5 GHz, and can be programmed to provide anywhere from 13.5 dB attenuation, to 18 dB... | |
| The HMC637BPM5E is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), cascode distributed power amplifier. The device is self biased in normal operation... | |
| The HMC753LP4E is a GaAs MMIC Low Noise Wideband Amplifier housed in a leadless 4x4 mm plastic surface mount package. The amplifier operates between 1 and 11 GHz, providing up... | |
| The HMC7950 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC). The HMC7950 is a wideband low noise amplifier that operates between 2... | |
| The HMC797A is a GaAs MMIC pHEMT Distributed Power Amplifier which operates between DC and 22 GHz. The amplifier provides 15 dB of gain, +29 dBm of output power at... | |
| The HMC797APM5E is a GaAs MMIC pHEMT Distributed Power Amplifier which operates between DC and 22 GHz. The amplifier provides 13.5 dB of gain, 39 dBm output IP3 and +28... | |
| The HMC8120 is an integrated E-band, gallium arsenide (GaAs), pseudomorphic (pHEMT), monolithic microwave integrated circuit (MMIC), variable gain amplifier and/or driver amplifier that operates from 71 GHz to 76 GHz. | |
| The HMC8121 is an integrated E-band, gallium arsenide (GaAs), pseudomorphic (pHEMT), monolithic microwave integrated circuit (MMIC), variable gain amplifier and/or driver amplifier that operates from 81 GHz to 86 GHz. | |
| The HMC8205BF10 is a gallium nitride (GaN) broadband power amplifier delivering 45.5 dBm (35 W) with 38% power added efficiency (PAE) across an instantaneous bandwidth of 300 MHz to 6... | |
| The HMC8325 is an integrated E-band gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), low noise amplifier (LNA) chip that operates from 71 GHz to 86 GHz. The HMC8325 provides... | |
| The HMC8402 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), low noise amplifier which operates between 2 GHz and 30 GHz. The... | |
| The HMC8410 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 0.01 GHz to 10 GHz. | |
| The HMC8411LP2FE is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 0.01 GHz to 10 GHz. | |
| The HMC8411TCPZ-EP is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 0.01 GHz to 10 GHz. | |
| The HMC8412 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 0.4 GHz to 11 GHz. | |
| The HMC8412CHIPS is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise amplifier that operates from 0.4 GHz to 10 GHz. The... | |
| The HMC8412TCPZ-EP is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise, wideband amplifier that operates from 0.4 GHz to 11 GHz. | |
| The HMC8413 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 0.01 GHz to 9 GHz. | |
| The HMC8415LP6GE is a gallium nitride (GaN), power amplifier, delivering 40 W (46 dBm) with more than 37.5% power added efficiency (PAE) across a bandwidth of 9 GHz to 10.5... | |
| The HMC8500PM5E is a gallium nitride (GaN), broadband power amplifier delivering 10 W (40 dBm), typical, with up to 55% power added efficiency (PAE) across an instantaneous bandwidth of 0.01... | |
| The HMC907APM5E is a GaAs MMIC pHEMT Distributed Power Amplifier which operates between 0.2 and 22 GHz. This self-biased power amplifier provides 14 dB of gain, +40 dBm output IP3... | |
| The HMC930A is a gallium arsenide (GaAs), pseudomorphic, high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from dc to 40 GHz. The HMC930A... | |
| The HMC943APM5E is a four stage, gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), >1.5 W power amplifier that operates between 24 GHz to... | |
| The HMC994A is a GaAs MMIC pHEMT Distributed Power Amplifier which operates between DC and 30 GHz. The amplifier provides 14 dB of gain, +39 dBm output IP3 and +28... | |
| The HMC998A is a GaAs MMIC pHEMT Distributed Power Amplifier die which operates between DC and 22 GHz. The amplifier provides 14.5 dB of gain, 43 dBm output IP3 and... | |
| The ICP1044 is a three stage MMIC power amplifier in bare die form, fabricated using GaN-on-SiC technology. ICP1044 operates from 7.9 to 11GHz with 44 dBm output power, 35% typical... | |
| The ICP1240 is a three stage MMIC power amplifier in bare die form, fabricated using GaN-on-SiC technology. ICP1240 operates from 6-18GHz with 41dBm output power, >16% PAE and 23dB typical... | |
| The ICP1639-1-110I is a three stage GaAs power amplifier MMIC with an operating frequency 14.5-17.5GHz. The PA has a pulsed saturated output power of 39dBm and a gain of 20dB. | |
| The LA17 limiting amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This design uses a Schottky diode limiter circuit at... | |
| The LA7 limiting amplifier is a discrete hybrid design, which used thin film manufacturing processes for accurate performance and high reliability. This design uses a Schottky diode limiter circuit at... | |
| The MAAL-011129 is an easy-to-use three stage low noise amplifier with high gain and broadband 50 Ω match. It is designed for operation from 18 to 31.5 GHz and housed... | |
| The MAAL-011139 is an RF amplifier assembled in a SOT-89 plastic package. In a 75 Ohm CATV application, the amplifier provides 21.5 dB of flat gain while biased from 3... | |
| The MAAL-011141 is an easy to use, wideband low noise distributed amplifier die. It operates from DC to 28 GHz and provides 17.5 dB of linear gain, 16 dBm of... | |
| The MAAL-011141-DIE is an easy to use, wideband low noise distributed amplifier die. It operates from DC to 28 GHz and provides 17 dB of linear gain, 16 dBm of... | |
| The MAAL-011151-DIE is an easy to use, wideband low noise distributed amplifier die. It operates from 2 to 18 GHz and provides 17 dB of linear gain, 16 dBm of... | |
| The MAAL-011181 is a wideband distributed low noise amplifier with an operating frequency range of 9 kHz to 20 GHz. This LNA typically has a 2.5 dB noise figure, 15... | |
| The MAAL-011181-DIE is a wideband distributed low noise amplifier with an operating frequency range of 9 kHz to 20 GHz. This LNA has a typical 2.5 dB noise figure, 15... | |
| The MAAL-011182 is a wideband distributed low noise amplifier with an operating frequency range of 2 to 20 GHz. This LNA has a 1.5 dB typical noise figure at 14... | |
| The MAAL-011182-DIE is a wideband distributed low noise amplifier with an operating frequency range of 2 to 20 GHz. This LNA has a 2.5 dB typical noise figure, 15 dB... | |
| The MAAL-011188 is a compact surface mount, highly integrated 2-stage low noise amplifier (LNA). This LNA is designed for operation from 1 to 6 GHz and is housed in a... | |
| The MAAL-011204 is a high dynamic range, single stage MMIC LNA. With external matching networks it exhibits excellent low noise performance, low input impedance and high gain characteristics suitable for... | |
| The MAAM-008863 provides high gain, low noise and low distortion amplification of the downstream CATV signal in fiber-to-the-home (FTTH) applications. This device is ideally suited for interfacing with the RF... | |
| The MAAM-010144 is a GaAs MESFET MMIC amplifier in a lead-free TSSOP-16LD exposed paddle package. The MMIC design is configured as a pair of cascode MESFET amplifiers for broadband performance. | |
| The MAAM-010239 is a GaAs pHEMT MMIC amplifier in a lead-free 4mm 20-lead PQFN package. The amplifier is designed to meet the high gain, high linearity and low noise requirements... | |
| The MAAM-010373 CATV amplifier is a GaAs MMIC that exhibits low distortion and high gain in a leadfree surface mount package. The MAAM-010373 employs a monolithic single stage design featuring... | |
| The MAAM-010399 is an integrated 3 stage differential amplifier with embedded voltage variable attenuator. This part is intended as the output amplifier in a downstream Edge QAM RF modulator. The... | |
| The MAAM-011109-DIE is an easy-to-use, wideband amplifier that operates from DC - 50 GHz. This device features 15 dB gain and +20 dBm of output power. Matching is 50 Ω | |
| The MAAM-011169 is a GaAs MMIC amplifier configured as two stages of differential amplifiers for broadband performance. It is optimized for very low distortion and noise figure in a 75... | |
| The MAAM-011206 is a versatile, DC - 15 GHz, Darlington amplifier, with 13.5 dB typical gain and 18 dBm of output power. The input and output are fully matched to... | |
| The MAAM-011240 is high gain, high linearity and low noise differential RF amplifier assembled in a SOIC-8EP plastic package. This amplifier provides 17 dB of flat gain with very low... | |
| The MAAM-011251 is an RF amplifier assembled in a SOT-89 plastic package. This amplifier provides 15 dB of flat gain in both forward and reverse path applications. This amplifier provides... | |
| The MAAM-011300 is an RF amplifier assembled ina SOT-89 plastic package. This amplifier provides17.5 dB of ultra flat gain while biased at either 5 or 8volts. The amplifier provides excellent... | |
| The MAAM-011324 is a wideband high linearity driver amplifier packaged in a compact 3 mm 16-Lead QFN package. This driver amplifier provides 17 dB gain and 26 dBm OP1dB with... | |
| The MAAM02350 is a wide band, MMIC amplifier. It includes two integrated gain stages and employs resistive feedBack to obtain flat gain and a good, 50 ohm input, and output... | |
| The PA512 0.5 watt RF power amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance an high reliability. This 2 stage GaAs FET transistor... |
| << Prev | Next >> |