Richardson RFPD Datasheets for RF Amplifiers
RF amplifiers are devices that accept a varying input signal and produce an output signal that varies in the same way, but with larger amplitude.
RF Amplifiers: Learn more
| Product Name | Notes |
|---|---|
| 0.5-20GHz Driver GaAs Monolithic Microwave IC. The CHA4220-98F is a distributed driver amplifier which operates between 0.5 and 20GHz. It is designed for a wide range of applications such as... | |
| 10-16GHz Medium Power Amplifier GaAs Monolithic Microwave IC. The CHA5266-99F is a three stage monolithic GaAs Medium Power Amplifier that produces 23dB linear gain and 36dBm OIP3. It is designed... | |
| 15W X Band High Power Amplifier. The CHA8610-99F is a two stage High Power Amplifier operating between 8.5 and 11 GHz and providing typically 15W of saturated output power and... | |
| 17-24GHz Medium Power Amplifier. The CHA4253aQQG is a four stage monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The... | |
| 2-8 GHz High Power Amplifier GaAs Monolithic Microwave IC. The CHA6015-99F is a HPA that provides typically 37.5 dBm output power on the frequency band 2-8 GHz. The circuit is... | |
| 21.2-23.6 GHz Power Amplifier. The CHA6356-QXG is a three stage monolithic GaAs high power circuit producing 2 Watt output power. It integrates a power detector and allows gain control. ESD... | |
| 28-33 GHz HPA 2W. GaAs Monolithic Microwave IC. The CHA6558-99F is a monolithic four stages GaAs high power amplifier, designed for Ka-Band applications. The circuit is dedicated to telecommunication and... | |
| 8-12 GHz High Power Amplifier GaAs Monolithic Microwave IC. The CHA6005-QEG is a high power amplifier monolithic circuit, which integrates two stages and produces 31.5dBm output power associated to a... | |
| 8-12GHz Driver Amplifier. The CHA6105 is a monolithic three-stage medium power amplifier designed for X-band applications. The driver provides typically 31.5dBm output power at saturation and is suitable for systems... | |
| 8-12GHz High Power Amplifier | |
| C Band High Power Amplifier GaAs Monolithic Microwave IC. CHA8012-99F is a monolithic two-stage GaAs High Power Amplifier (HPA) designed for C band applications. The HPA provides typically 12W of... | |
| CMP2560025D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown... | |
| CMPA0060002F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown... | |
| CMPA0060002F1 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown... | |
| CMPA0060025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown... | |
| CMPA0060025F1 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage,... | |
| CMPA0527005F is packaged gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). This device is matched to 50 ohms at the input and unmatched at... | |
| CMPA0560008S is a 10W packaged MMIC HPA utilizing high performance, 0.15um GaN on SiC production process. The CMPA0560008S operates from 0.45-6 GHz and supports a variety of RF applications such... | |
| CMPA0760020F is a 25W package MMIC HPA utilizing high performance, 0.15um GaN on SiC production process. The CMPA0760020F operates from 0.7-6 GHz and supports military communications and electronic warfare along... | |
| CMPA1C1D060D is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT) based monolithic-microwave integrated circuit (MMIC) on a silicon carbide substrate; using a 0.25-μm gate-length fabrication process. GaN-on-SiC has superior properties compared... | |
| CMPA1C1D080F is a packaged, 90 W HPA utilizing high performance, 0.25um GaN on SiC production process. With a 12.75 - 13.25 GHz operating frequency range targeting satellite communications, the CMPA1C1D080F... | |
| CMPA1D1E025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate, using a 0.25 um gate length fabrication... | |
| CMPA1D1J001S is a 1W package MMIC HPA utilizing high performance, 0.15um GaN on SiC production process. The CMPA1D1J001S operates from 12.7-18 GHz and supports both radar and communication applications within... | |
| CMPA1F1H060 MMIC HPA family supports up to 80 W utilizing high performance, 0.15um GaN on SiC production process. The product family operates from 15.4-17.7 GHz and supports both defense and... | |
| CMPA1H1J050F is a 60W package MMIC HPA utilizing high performance, 0.15um GaN on SiC production process. The CMPA1H1J050F operates from 17.3- 18.4 GHz and supports Direct Broadcast Satellite communications. The... | |
| CMPA2060035F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown... | |
| CMPA2560025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown... | |
| CMPA2735015S is a gallium nitride (GaN) High Electron Mobility Transistor(HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superiorproperties compared to silicon or gallium arsenide, including higher breakdownvoltage, higher saturated... | |
| CMPA2735030S is a gallium nitride (GaN) High Electron MobilityTransistor (HEMT) based monolithic microwave integrated circuit(MMIC). GaN has superior properties compared to silicon or galliumarsenide, including higher breakdown voltage, higher saturated... | |
| CMPA2735075F1 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown... | |
| CMPA2738060F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown... | |
| CMPA5259025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) designed specifically for high efficiency, high gain, and wide bandwidth capabilities, which makes... | |
| CMPA5259025S is a gallium-nitride (GaN) HEMT-based monolithic microwaveintegrated circuit (MMIC). GaN has superior properties compared to silicon or galliumarsenide allowing the technology to offer greater power density and wider bandwidthscompared... | |
| CMPA5259050D1 is a 60W MMIC HPA utilizing high performance, 0.15um GaN on SiC production process. The CMPA5259050D1 operates from 5.0-5.9 GHz and supports both defense and commercial-related radar applications. The... | |
| CMPA5259050F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) designed specifically for high efficiency, high gain, and wide bandwidth capabilities, which makes CMPA5259050F ideal for 5.2 - 5.9... | |
| CMPA5259050S is a gallium nitride (GaN) High Electron Mobility Transistor(HEMT) based monolithic microwave integrated circuit (MMIC). This MMICcontains a two-stage reactively matched amplifier design approach enablinghigh power and power added... | |
| CMPA5259100S is a 100W package MMIC HPA utilizing high performance, 50V GaN on SiC production process. The CMPA5259100S operates from 5.0-5.9 GHz and supports both defense and commercial-related radar applications. | |
| CMPA5585030F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown... | |
| CMPA601C025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate, using a 0.25 μm gate length fabrication... | |
| CMPA601J025 is a 25 W MMIC HPA utilizing high performance, 0.15um GaN on SiC production process. The CMPA601J025 family operates from 6 – 18 GHz and supports a variety of... | |
| CMPA801B030F1 is a packaged, 35 W HPA utilizing high performance, 0.15um GaN on SiC production process. The CMPA801B030F1 operates from 8-12 GHz and targets pulsed radar systems supporting both defense... | |
| CMPA801B030S is a packaged, 40W HPA utilizing high performance, 0.15um GaN on SiC production process. The CMPA801B030S operates from 7.9-11.0 GHz and targets pulsed radar systems supporting both defense and... | |
| CMPA851A005S is a 4.5 W package MMIC HPA utilizing high performance, 0.15um GaN on SiC production process. The CMPA851A005S operates from 8.5-10.5 GHz and supports both defense and commercial-related radar... | |
| CMPA851A012S supports 20 W utilizing high performance, 0.15um GaN on SiC production process. The product family operates from 8.5 – 10 GHz and supports both defense and commercial-related radar applications. | |
| CMPA851A025S is a 40 W, packaged MMIC HPA utilizing high performance, 0.15um GaN on SiC production process. The CMPA851A025S operates from 8.5 – 10.5 GHz and supports both defense and... | |
| CMPA851A050 MMIC HPA family supports up to 80 W utilizing high performance, 0.15um GaN on SiC production process. The product family operates from 8.5-10.5 GHz and supports both defense and... | |
| CMPA901A020S is a packaged, 20W HPA utilizing high performance, 0.15um GaN on SiC production process. The CMPA901A020S operates from 9-10 GHz and targets pulsed radar applications such as marine weather... | |
| CMPA9396025S is a GaN MMIC designed specifically from 9.3-9.6GHz to be compact and provide high-efficiency, which makes it ideal for marineradar amplifier applications. The MMIC delivers 25W at 100usec pulse... | |
| GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 0.3-20 GHz. The HMC1049LP 5E is a GaAs MMIC Low Noise Amplifier which operates between 0.3 and 20 GHz. This LNA provides 15 dB... | |
| GRF2011 is a broadband gain block with low noise figure and industry leading linearity designed for small cell, wireless infrastructure and other high performance applications. It exhibits outstanding broadband NF,... | |
| GRF2013W is a broadband gain block with low noise figure and high linearity designed for small cell, wireless infrastructure and other high performance applications. It exhibits outstanding broadband NF, linearity... | |
| GRF2042 is a broadband gain block with bypass for small cell, wireless infrastructure and other high performance applications. It exhibits flat gain and outstanding NF and linearity over 400 to... | |
| GRF2043 is a broadband gain block with bypass for small cell, wireless infrastructure and other high performance applications. It exhibits flat gain and outstanding NF and linearity over 400 to... | |
| GRF2051 is an ultra-low noise amplifier designed for wireless infrastructure and other high performance RF applications requiring the absolute lowest possible NF, high gain and outstanding linearity. Broadband external matches... | |
| GRF2052 is an ultra-low noise amplifier designed for wireless infrastructure and other high performance RF applications requiring the absolute lowest possible NF, high gain and outstanding linearity. Broadband external matches... | |
| GRF2074 is a broadband, linear, ultra-low noise amplifier designed for small cell, wireless infrastructure and other high performance RF applications requiring ultra-low NF, high gain and linearity. The standard tune... | |
| GRF2083 is a broadband, linear, ultra-low noise amplifier designed for small cell, wireless infrastructure and other high performance RF applications requiring ultra-low NF, high gain and linearity. The device features... | |
| GRF2093 offers industry leading NF and gain performance and can be tuned over a wide range of frequencies from roughly 1.0 to 6.0 GHz. Including evaluation board losses, the NF... | |
| GRF2093-W offers industry leading NF and gain performance and can be tuned over a wide range of frequencies from roughly 1.0 to 6.0 GHz. GRF2093-W is part of Guerrilla RF’s... | |
| GRF2101 is an ultra-low noise amplifier (LNA) designed for IEEE 802.11a/n/ac/p applications (5.1 GHz to 5.925 GHz). Over this band, the device exhibits outstanding evaluation board noise figure (NF) of... | |
| GRF2106 is a low cost, high gain LNA designed for a wide range of applications up to 4.2 GHz. The device is operated from a supply voltage (Vdd) range of... | |
| GRF2133W is a broadband linear gain block featuring ultra-high gain and sub 0.85 dB noise figure for small cell, cellular booster, wireless infrastructure and other high performance applications. Configured as... | |
| GRF2140 is a low noise amplifier (LNA) with bypass designed for high-performance WLAN/ISM and other applications up to 3.8 GHz. The LNA is operated from a single positive supply of... | |
| GRF2171 is an ultra-high gain, ultra-low noise amplifier that can be tuned over a wide range of frequencies. Flexible biasing allows the device to be configured for a wide range... | |
| GRF2201 is a low-cost, linear LNA designed for demanding 2.4 GHz WLAN and ISM band applications. The device is operated from a supply voltage (Vdd) range of 2.7 to 5.0... | |
| GRF2243 is a low noise amplifier (LNA) with low loss by-pass which requires only a single control input. It is designed for high performance applications up to 5.0 GHz. With... | |
| GRF2373 can serve as a low current, high gain LNA or linear driver tunable over 100 to 3800 MHz. It exhibits outstanding gain and NF with a typical bias condition... | |
| GRF2374 is a low noise amplifier (LNA) with bypass de-signed for high-performance WLAN/ISM and other applications up to 3.8 GHz. The device is ideal for low power, cost sensitive bypass... | |
| GRF2501W is an ultra-low noise amplifier (LNA) designed for IEEE 802.11a/n/ac/p applications in the 5 GHz band and up to 9 GHz with appropriate matching. The LNA is operated from... | |
| GRF2543 is an ultra-low noise amplifier (LNA) with by-pass designed for IEEE 802.11a/n/ac/p applications over 5.1 GHz to 5.925 GHz. The device exhibits out-standing noise figure, linearity and gain to... | |
| GRF3016 is a broadband gain block designed for applications up to 10.0 GHz exhibiting flat gain over the band. This resistively biased device employs an external resistor in series with... | |
| GRF4014-W is a broadband low-noise, linear driver designed for SDARS, small cell, wireless infrastructure and other high performance applications. With simple external matching, it exhibits outstanding broadband NF, linearity and... | |
| GRF4042 is a low noise amplifier (LNA) with low loss bypass designed for high performance applications up to 2.7 GHz. Guerrilla Armor™ technology provides exceptional off-state isolation in the presence... | |
| GRF4142 is a low noise amplifier (LNA) with low loss bypass which requires only a single control input. It is designed for high performance applications up to 3.8 GHz. With... | |
| GRF5010 is a high linearity PA with ultra-low noise figure (NF). The primary tune for this device covers 1.7 to 3.8 GHz and it achieves outstanding P1dB, IP3 and NF... | |
| GRF5040 is a high linearity PA with ultra-low noise figure (NF). The primary tune for this device covers 1.7 to 2.7 GHz and it achieves outstanding P1dB, IP3 and NF... | |
| GRF5504 is a high efficiency PA that delivers up to 3.5 Watts at Psat with Vcc at 5.0 volts and a low Iccq of 120 mA. PAE at Psat is... | |
| GRF5506 is a linear power amplifier optimized to deliver excellent P1dB, ACLR and IM3 performance over the 660 to 720 MHz band. | |
| GRF5507 is a linear power amplifier optimized to deliver excellent P1dB, ACLR and IM3 performance over the 700 to 800 MHz band. | |
| GRF5508 is a linear power amplifier optimized to deliver excellent P1dB, ACLR and IM3 performance over the 800 to 900 MHz band. | |
| GRF5509 is a high efficiency PA that delivers 4 Watts OP1dB with Psat approaching 5 watts with Vcc at 5.0 volts and an Iccq of 125 mA. PAE at Psat... | |
| GRF5517 is a linear power amplifier optimized to deliver excellent P1dB, ACLR and IM3 performance over the 1700 to 1800 MHz band. | |
| GRF5518 is a linear power amplifier optimized to deliver excellent P1dB, ACLR and IM3 performance over the 1800 to 1910 MHz band. | |
| Guerrilla RF offers a new AEC-Q100 Class 2 qualified broadband linear gain block with low noise figure and industry-leading linearity. The GRF2012-W is operated from a supply voltage of 2.7... | |
| Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the... | |
| The CHA3666-QAG is a two-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air... | |
| The CHA3688aQDG is a three-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard P-HEMT process: 0.25µm gate length, via holes through the substrate, air... | |
| The CHA3689 is a three-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard P-HEMT process: 0.25µm gate length, via holes through the substrate,... | |
| The CHA3801-99F is an L-Band LNA monolithic circuit including an active bias network. Furthermore a protection network is included in order to allow high input power survivability The circuit is... | |
| The CHA3801-QDG is an L-Band LNA monolithic circuit including an active bias network. Furthermore a protection network is included in order to allow high input power survivability. It is designed... | |
| The CHA4102-QEG is a variable gain amplifier monolithic circuit, which integrates 6 bit digital attenuator and a 2 stage driver amplifier that produces 20dB gain, an output power of 23.5dBm... | |
| The CHA4105-99F is a monolithic two-state driver amplifier delivering 24dBM output power @ 1dB gain compression in the 2-4 GHz frequency range. It is designed for a wide range of... | |
| The CHA4105-QDG is a monolithic two-stage driver amplifier delivering 24dBm output power @ 1dB gain compression in the range 2-4GHz. It is designed for a wide range of applications, from... | |
| The CHA4107-QDG is a monolithic two-stage GaAs medium power amplifier designed for C-band applications. The MPA provides typically 25.5 dBm output power associated to 30% power added efficiency at 1dB... | |
| The CHA4220-QGG is a distributed Driver Amplifier that operates between 0.1 and 20 GHz. It is designed for a wide range of applications, such as electronics warfare, X and Ku... | |
| The CHA4252-QKB is a three-stage Medium Power Amplifier in the 17.2 to 21.3GHz frequency band. This MPA typically provides 25dBm output power associated to 30% of Power Added Efficiency. The... | |
| The CHA4262-QDG is a three-stage GaAs Medium Power Amplifier operating between 17GHz and 22GHz. This amplifier provides 23dBm saturated output power with 37% Power Added Efficiency and 20dBm Output Power... | |
| The CHA4314-98F is a two stage monolithic Medium Power Amplifier circuit. It is designed for a wide range of applications: Radar, electronic Warfare, PtP radios, Test & Measurement and General... | |
| The CHA4350-QDG is a three stage monolithic medium power amplifier circuit. It is well suited for a wide range of applications from defense to commercial communication systems. This circuit is... | |
| The CHA4395-QDG is a three-stage GaAs Medium Power Amplifier operating between 21GHz and 27GHz. This amplifier provides 23dBm maximum output power with 15% Power Added Efficiency and 21dBm Output Power... | |
| The CHA4396-QDG is a three-stage GaAs Medium Power Amplifier operating between 24 GHz and 30 GHz. This amplifier provides 22dBm maximum Output Power with 17% of Power Added Efficiency and... | |
| The CHA4861-QGG is a variable gain broadband four stage monolithic amplifier. It is designed for a wide range of application, typically commercial communication systems. | |
| The CHA5012 chip is a monolithic two stage medium power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through the... | |
| The CHA5266-QDG is a three stage monolithic GaAs medium power amplifier. It is designed for a wide range of applicaions, from professional to commercial communcation systems. | |
| The CHA5350-99F is a four stage monolithic MPA that typically provides an output power of 26.5dBm at 1dB gain compression associated to a high IP3 output of 34 dBm | |
| The CHA5618-99F is a monolithic GaN Driver Amplifier in the frequency band 6-18GHz with a control interface for speed switching. This driver provides 28dBm of Output Power. The circuit exhibits... | |
| The CHA5659-98F is a four stage monolithic GaAs High Power Amplifier producing 1.3 Watt output power. It is highly linear, with possible gain control and integrates a power detector. ESD... | |
| The CHA6094-QKB is a GaN packaged monolithic Power Amplifier operating in the 35-42.5 GHz frequency range. Typical saturated Output power is 33dBm and small signal gain is 26dB. It is... | |
| The CHA6095-QKB is a GaN packaged monolithic Power Amplifier operating in the 35-42.5 GHz frequency range. Typical saturated Output power is 36dBm and small signal gain is 25dB. It is... | |
| The CHA6194-QXG is a four stage monolithic GaAs high power circuit producing 1.2 Watt output power. It is highly linear with possible gain control and integrates a power detector. ESD... | |
| The CHA6262-99F is a three-stage GaN High Power Amplifier operating in the frequency band 17.3-21.5GHz. This HPA typically provides 4W output power associated to 36% of Power Added Efficiency. The... | |
| The CHA6282-QCB is a three-stage GaN High Power Amplifier in the frequency band 17.3-21.5GHz. This HPA typically provides 4W output power associated to 28% of Power Added Efficiency. The circuit... | |
| The CHA6357-98F is a bare die three-stage GaN Power Amplifier operating between 27GHz and 31GHz. This amplifier typically provides 5W of saturated Output Power associated to 23% and 24dB of... | |
| The CHA6362-QXG is a three stage monolithic GaAs high power circuit producing 2.5 Watt output power. It integrates a power detector and allows gain control. ESD protections are included. It... | |
| The CHA6653-98F is a four stages monolithic GaAs High Power Amplifier producing 1.8 Watt output power. It is highly linear, with gain control capability and integrates a power detector. ESD... | |
| The CHA6653-QXG is a four stage monolithic GaAs high power circuit producing 1.8 Watt output power. It is highly linear, with possible gain control and integrates a power detector. ESD... | |
| The CHA6682-98F is a three stage High Power Amplifier operating between 24 and 27.5GHz with integrated power detectors that provides 5W of saturated output power with 32% of Power Added... | |
| The CHA6682-98F is a three stage High Power Amplifier with integrated power detector and ESD protection. The CHA6682-98F operates between 24 and 27.5 GHz and provides 5W of saturated output... | |
| The CHA6710-99F is a two stage Medium Power Amplifier operating between 8 and 12.75GHz. It typically provides 5W of saturated output power and 36% of power added efficiency. It is... | |
| The CHA6710-FAB is a GaN based 5W X-Band (8 to 12.75GHz) Medium Power Amplifier in hermetic metal ceramic package and is intended for use in space applications. | |
| The CHA6735-QKB is a packaged monolithic High Power Amplifier exhibiting 4W output power and 22% of Power Added Efficiency over 27-31 GHz bandwidth. It is well suited for VSAT, SatCom... | |
| The CHA7060-QAB is a two stages monolithic GaN High Power Amplifier, reaching 12 Watt output power over 5.6-8.5GHz bandwidth. It offers high linearity performance with 30dB of Gain and an... | |
| The CHA7063-QCB/20 is a GaN monolithic Power Amplifier operating over 12.7-20 GHz providing typically 5W saturated output power with 17% of Power Added Efficiency. This amplifier exhibits 30 dBm linear... | |
| The CHA7215 is a monolithic three-stage GaAs high power amplifier designed for X band applications. The HPA provides typically 9W output power associated to 36% power added efficiency at 4dBc... | |
| The CHA7250-QAB is a two stage monolithic GaN on SiC Power Amplifier exhibiting 10W saturated output power over 10-12.75GHz frequency range. It features 37% Power Added Efficiency and a linear... | |
| The CHA7452-99F is a four stage High Power Amplifier operating between 35.5 and 40.5 GHz and providing typically 9W of saturated output power and 24 % of power added efficiency. | |
| The CHA7455-99F is a four-stage High Power Amplifier operating between 39.5 and 42.5 GHz and providing more than 8W of saturated output power and 24% of power added efficiency. The... | |
| The CHA7618-99F is a three-stage GaN High Power Amplifier in the frequency band 5.5-18GHz. This HPA typically provides 10W of Output Power associated to 20% of Power Added Efficiency. The... | |
| The CHA8054-99F is a two stage High Power Amplifier operating between 7.7 and 8.6GHz and typically providing 20W of saturated output power and 50% of Power Added Efficiency. It is... | |
| The CHA8100 chip is a monolithic two stage high power amplifier designed for X band applications. The HPA provides typically 11W output power, 40% power added efficiency and a high... | |
| The CHA8107-QCB is a two-stage GaN High Power Amplifier for the 4.5 – 6.8GHz frequency band. This HPA operates with a drain voltage from 14V to 24V. Depending on the... | |
| The CHA8212-99F is a three-stage GaN High Power Amplifier in the frequency band 8.5-11.5GHz. This HPA typically provides 25W of output power associated to 36% of Power Added Efficiency. The... | |
| The CHA8254-99F is a three-stage GaN Doherty Power Amplifier in the frequency band 17.3-20.3GHz. This DPA typically provides 10W of output power associated to 31% of Power Added Efficiency. Thanks... | |
| The CHA8262-99F is a three stage monolithic GaN High Power Amplifier reaching 12W Output Power over 27.5-31.5GHz bandwidth. It offers high linearity performances and reaches more than 25% of Power... | |
| The CHA8265-98F is a 3-stage high power amplifier operating between 27.5 and 31GHz and providing typically 25W of saturated output power associated to 30% of Power Added Efficiency at 25V... | |
| The CHA8282-99F is a three-stage GaN High Power Amplifier in the frequency band 27.5-31GHz. This HPA typically provides 10W output power associated to 33% of Power Added Efficiency. The circuit... | |
| The CHA8312-99F is a two-stage GaN High Power Amplifier in the frequency band 8-12GHz. This HPA typically provides 17W of output power associated to 50% of Power Added Efficiency. The... | |
| The CHA8352-99F is a two-stage GaN High Power Amplifier in the frequency band 10.7-12.75GHz. This HPA typically provides 20W of output power associated to 45% of Power Added Efficiency. The... | |
| The CHA8362-99F is a three stage High Power Amplifier operating between 26.5 and 31GHz and providing typically 25W of saturated output power associated to 30% of power added efficiency. The... | |
| The CHA8611-99F is a two stage High Power Amplifier operating between 8.5 and 11GHz and providing typically 18W of saturated output power and 43% of power added efficiency. The circuit... | |
| The CHA8612-QDB is a two stage High Power Amplifier operating between 7.9 and 11GHz and providing typically 18W of saturated output power and 40% of Power Added Efficiency. It is... | |
| The CHA8618-99F is a monolithic GaN High Power Amplifier in the frequency band 6-18GHz with a control interface for fast switching. This power amplifier provides 42.5 dBm of saturated output... | |
| The CHA8710-QDB is a two stage High Power Amplifier operating between 8.5 and 10.5GHz and providing typically 25W of saturated output power and 41% of power added efficiency. It is... | |
| The CHA8710a99F is a two stage High Power Amplifier operating between 8.5 and 10.5GHz and providing typically 25W of saturated output power and 44% of power added efficiency. The circuit... | |
| The CMPA1E1F060 MMIC HPA family supports up to 60 W utilizing The high performance, 0.15um GaN on SiC production process. The product family operates from 13.4 - 15.5 GHz and... | |
| The CMPA2935150S is a high power two-stage MMIC housed in a QFN package allowing for compact module designs and easy assembly. The device is capable of 150W of pulsed output... | |
| The CMPA901A035F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate. The semiconductor offers 35 Watts of... | |
| The CMPA901A035F1 is a gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate. The device provides 35 watts of output power across the band from... | |
| The ERZ-LNA-0002-0600-27 -5.5 is a Low Noise Amplifier providing a gain of 27 dB with a noise figure of 5.5 dB. The compact size and modularity makes it ideal for... | |
| The ERZ-LNA-0100-4000-30 -5 is a Low Noise Amplifier providing a gain of 30 dB with a noise figure of 5 dB. The compact size and modularity makes it ideal for... | |
| The ERZ-LNA-0100-4000-45 -5 is a Low Noise Amplifier providing a gain of 45 dB with a noise figure of 5 dB. The compact size and modularity makes it ideal for... | |
| The ERZ-LNA-0200-1800-18 -4 is a Low Noise Amplifier providing a gain of 20 dB with a noise figure of 3 dB. The compact size and modularity makes it ideal for... | |
| The ERZ-LNA-0200-1800-30 -2 is a Low Noise Amplifier providing a gain of 30 dB with a noise figure of 2 dB. The compact size and modularity makes it ideal for... | |
| The ERZ-LNA-0200-5000-22 -6 is a Low Noise Amplifier providing a gain of 22 dB with a noise figure of 5 dB. The compact size and modularity makes it ideal for... | |
| The ERZ-LNA-0550-1800-40 -4 is a Low Noise Amplifier providing a gain of 40 dB with a noise figure of 4 dB. The compact size and modularity makes it ideal for... | |
| The ERZ-LNA-0600-1200-35 -3 is a Low Noise Amplifier providing a gain of 35 dB with a noise figure of 2 dB. The compact size and modularity makes it ideal for... | |
| The ERZ-LNA-1700-2400-25 -2.5 is a K Band Low Noise Amplifier providing a gain of 26 dB and a noise figure of 2.5 dB. The compact size and modularity makes it... | |
| The ERZ-LNA-1770-2200-40 -1.5 is a Low Noise Amplifier providing a gain of 39 dB with a noise figure of 1.3 dB. The compact size and modularity makes it ideal for... | |
| The ERZ-LNA-1800-4200-24 -6 is a Low Noise Amplifier providing a gain of 24 dB with a noise figure of 5 dB. The compact size and modularity makes it ideal for... | |
| The ERZ-LNA-2600-4000-30 -2.5 is a Ka Band Low Noise Amplifier providing a gain higher than 30 dB and a low noise figure of 2.5 dB. The compact size and modularity... | |
| The ERZ-LNA-2600-4000-50 -2.5 is a Low Noise Amplifier providing a gain of 50 dB with a noise figure of 2.5 dB. The compact size and modularity makes it ideal for... | |
| The GRF2003 is a broadband, low noise linear gain block designed for small cell, wireless infrastructure and other high performance RF applications. A single match will offer strong RF performance... | |
| The GRF2004 is a broadband, low noise linear gain block designed for small cell, wireless infrastructure and other high performance RF applications. A single match will offer strong RF performance... | |
| The GRF2012 is a broadband gain block with low noise figure and industry leading linearity designed for small cell, wireless infrastructure and other high performance applications. It exhibits outstanding broadband... | |
| The GRF2013 is a broadband gain block with low noise figure and high linearity designed for small cell, wireless infrastructure and other high performance applications. It exhibits outstanding broadband NF,... | |
| The GRF2014 is a broadband, linear gain block designed for small cell, wireless infrastructure and other high performance applications. It exhibits outstanding broadband linearity and return losses over 700 to... | |
| The GRF2070 is a broadband, linear, ultra-low noise amplifier designed for small cell, wireless infrastructure and other high performance RF applications requiring ultra-low NF, high gain and linearity. Configured as... | |
| The GRF2071 is a broadband, linear, ultra-low noise amplifier designed for small cell, wireless infrastructure and other high performance RF applications requiring ultra-low NF, high gain and linearity. Configured as... | |
| The GRF2072 is a broadband, linear, ultra-low noise amplifier designed for small cell, wireless infrastructure and other high performance RF applications requiring ultra-low NF, high gain and linearity. Configured as... | |
| The GRF2073 is a broadband, linear, ultra-low noise amplifier designed for small cell, wireless infrastructure and other high performance RF applications requiring ultra-low NF, high gain and linearity. Configured as... | |
| The GRF2080 is a broadband, linear, ultra-low noise amplifier designed for small cell, wireless infrastructure and other high performance RF applications requiring ultra-low NF, high gain and linearity. | |
| The GRF2081 is a broadband, linear, ultra-low noise amplifier designed for small cell, wireless infrastructure and other high performance RF applications requiring the absolute lowest possible NF, high gain and... | |
| The GRF2105 is a broadband, ultra-low noise linear amplifier designed for small cell, wireless infrastructure and other high performance RF applications. The standard tune exhibits outstanding NF and linearity, return... | |
| The GRF2105W is a broadband, ultra-low noise linear amplifier designed for small cell, wireless infrastructure and other high performance RF applications. The standard tune exhibits outstanding noise figure (NF), linearity,... | |
| The GRF2110 is a broadband, ultra-low noise linear amplifier designed for WiFi 6/6E, small cell, wireless infrastructure and other high performance RF applications up to 8 GHz. The standard tune... | |
| The GRF2111 is a broadband, ultra-low noise linear amplifierdesigned for X-Band and other high-performance RF applications upto 12 GHz. The standard tune exhibits outstanding noise figure (NF), linearity, return loss... | |
| The GRF2115 is a broadband, linear, high frequency gain block designed for use in small cell, wireless infrastructure, instrumentation, and other high performance RF applications requiring low noise figure (NF),... | |
| The GRF2116 is a broadband, linear, high frequency gain block designed for use in small cell, wireless infrastructure, instrumentation, and other high performance RF applications requiring low noise figure (NF),... | |
| The GRF2117 is a broadband, linear, high frequency low noise amplifier/gain block designed for use in C-Band, X-Band, K-Band and other high performance RF applications requiring low noise figure (NF),... | |
| The GRF2133 is a broadband linear gain block featuring ultra-high gain and sub 0.85 dB noise figure for small cell, cellular booster, wireless infrastructure and other high performance applications. Configured... | |
| The GRF2501 is an ultra-low noise amplifier (LNA) de-signed for IEEE 802.11a/n/ac/p applications (5.1 GHz to 5.925 GHz). Over this band, the device exhibits out-standing de-embedded noise figure (NF) of... | |
| The GRF2505 is a broadband, ultra-low noise, linear am-plifier offering the highest levels of performance for demanding 802.11ac and wireless backhaul LNA and PA driver applications. This amplifier exhibits outstanding... | |
| The GRF2541 is an ultra-low noise amplifier (LNA) with bypass designed for IEEE 802.11a/n/ac/p applications in the 5GHz band (5.1 GHz to 5.925 GHz). The device exhibits outstanding de-embedded noise... | |
| The GRF2584 is a two-stage GaAs pHEMT low noise amplifier targeting high-performance wireless infrastructure applications. The device can be tuned to operate over narrow or wide bandwidths over a range... | |
| The GRF2710 is a high gain, low noise, linear amplifier designed for high performance 8.0 to 13.0 GHz X-band applications. Over this frequency range, it exhibits excellent gain and compression... | |
| The GRF3012 is a broadband gain block designed for RF applications from near DC through X-Band. This resistively biased device employs an external resistor in series with VCC to set... | |
| The GRF3042 is a broadband low noise gain block designed for applications in the 0.05 to 13.0 GHz spectrum, exhibiting a typical low noise figure (NF) of 3.5 dB along... | |
| The GRF3044 is a broadband low noise gain block designed for applications up to 11.0 GHz, exhibiting a typical low noise figure (NF) of 1.8 dB along with high gain. | |
| The GRF4001 is a broadband low noise gain block designed for small cell, wireless infrastructure and other high performance applications. It exhibits outstanding broadband NF, linearity and return losses over... | |
| The GRF4002 is a broadband low noise gain block designed for small cell, wireless infrastructure and other high performance applications. It exhibits outstanding broadband NF, linearity and return losses over... | |
| The GRF4003 is a broadband low noise gain block designed for small cell, wireless infrastructure and other high performance applications. It exhibits outstanding broadband NF, linearity and return losses over... | |
| The GRF4004 is a broadband low noise gain block designed for small cell, wireless infrastructure and other high performance applications. With simple external matching, it exhibits outstanding broadband NF, linearity... | |
| The GRF4005 is a broadband low noise gain block designed for small cell, wireless infrastructure and other high performance applications. With simple external matching, it exhibits outstanding broadband NF, linearity... | |
| The GRF5020 is a high linearity PA with ultra-low noise figure (NF). Wideband tunes deliver excellent P1dB, IP3 and NF over the various bands. The device can be tuned to... | |
| The GRF5109 is a high linearity PA /Linear Driver with low noise figure (NF). It delivers excellent P1dB, IP3 and NF over a wide range of frequencies with fractional bandwidths... | |
| The GRF5110 is a high linearity PA /Linear Driver with low noise figure (NF). It delivers excellent P1dB, IP3 and NF over a wide range of frequencies with fractional bandwidths... | |
| The GRF5112 is a GaAs pHEMT Power Amplifier that can be tuned to deliver excellent ACLR and OIP3 performance over the 100 to 2700 MHz band. Its exceptional native linearity... | |
| The GRF5115 is a high linearity PA /Linear Driver with low noise figure (NF). It delivers excellent P1dB of almost 2 watts, IP3 and NF and is tunable from 100... | |
| The GRF5226 is a high-gain, three-stage driver amplifier targeting 2.3 to 2.7 GHz wireless infrastructure applications. The device delivers up to 29.8 dBm of OP1dB, 37 dBm of OIP3, and... | |
| The GRF5236 is a high-gain, three-stage driver amplifier targeting 3.3 to 4.2 GHz wireless infrastructure applications. The device delivers upto 30.2 dBm of OP1dB, 33.2 dBm of OIP3, and a... | |
| The GRF5511 is a high linearity PA/Linear Driver with low noise figure (NF). It delivers excellent P1dB, IP3 and NF over a wide range of frequencies with fractional bandwidths >15%... | |
| The GRF5519 is a high gain, two-stage InGaP HBT power amplifier designed to deliver excellent P1dB, ACLR and IM3 performance over the 1920 to 2000 MHz band. Its exceptional native... | |
| The GRF5521 is a high gain, two-stage InGaP HBT power amplifier designed to deliver excellent P1dB, ACLR and IM3 performance the 2110 to 2170 MHz band. Its exceptional native linearity... | |
| The GRF5536 is a high gain, two-stage InGaP HBT power amplifier designed to deliver excellent P1dB, ACLR and IM3 performance over the standard 3.3 to 3.8 GHz band. Its exceptional... | |
| The GRF5603 is a high gain, two-stage InGaP HBT power amplifier designed for 865 to 928 MHz RFID applications. | |
| The GRF5605 is a high gain, two-stage InGaP HBT Power Amplifier designed to deliver excellent P1dB, ACLR and IM3 performance over the 617 to 652 MHz band. Its exceptional native... | |
| The GRF5608 is a high gain, two-stage InGaP HBT Power Amplifier designed to deliver excellent P1dB, ACLR and IM3 performance over the 746 to 830 MHz band. Its exceptional native... | |
| The GRF5610 is a high gain, two-stage InGaP HBT Power Amplifier designed to deliver excellent P1dB, ACLR and IM3 performance over the 865 to 928 MHz band. Its exceptional native... | |
| The GRF5847 is a PA module achieving 35+ dBm saturated output power from 4.4 to 5.2 GHz with power added efficiency greater than 50%. Due to its high native linearity,... | |
| The GRF5857 is a PA module achieving 35+ dBm saturated output power from 5.2 to 6 GHz with power added efficiency greater than 50%. Due to its high native linearity,... | |
| The HMC1022ACHIPS is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from dc to 48 GHz. The amplifier... | |
| The HMC1040LP3CE is a self-biased GaAs MMIC Low Noise Amplifier housed in a leadless 3x3 mm plastic surface mount package. The amplifier operates between 24 and 43.5 GHz, delivering 23... | |
| The HMC1049SCPZ-EP is a Gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), low noise amplifier (LNA) that operates between 0.3 GHz and 20 GHz. This LNA provides 14 dB of... | |
| The HMC1099PM5E is a gallium nitride (GaN), broadband power amplifier that delivers 10 W (40 dBm) with up to 60% power added efficiency (PAE) across an instantaneous bandwidth of 0.01... | |
| The HMC1114PM5E is a gallium nitride (GaN), broadband power amplifier delivering >10 W (up to 42 dBm) typical with up to 55% power added efficiency (PAE) across an instantaneous bandwidth... | |
| The HMC1126ACEZ is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), low noise amplifier that operates from 400 MHz to 52 GHz. The HMC1126ACEZ provides 12 dB of... | |
| The HMC1132PM5E is a four-stage, gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC) power amplifier. The device operates from 27 GHz to 32 GHz,... | |
| The HMC392A is a GaAs MMIC Low Noise Amplifier die which operates between 3.5 and 7.0 GHz. The amplifier provides 17.2 dB of gain, 1.7 dB noise figure, and 32.5... | |
| The HMC392ALC4 is a GaAs MMIC Low Noise Amplifier which operates between 3.5 and 8.0 GHz. Housed in a leadless 4x4 mm SMT package, this amplifier provides 17 dB of... | |
| UMS develops a monolithic four-stage GaAs high power amplifier designed for wideband applications. The MPA provides typically 25dBm of output power associated to 20% of power added efficiency at 1dB... | |
| X Band HBT Driver Amplifier. The CHA5014 chip is a monolithic two-stage medium power amplifier designed for X band applications. Moreover this amplifier is relevant for systems that require an... | |
| X-band High Power Amplifier, GaAs Monolithic Microwave IC. The CHA7115 is a monolithic three-stage GaAs high power amplifier designed for X-band applications. The HPA provides typically 8W output power associated... | |
| X-band Medium Power Amplifier. GaAs Monolithic IC. The CHA5115-QDG is a monolithic two-stage GaAs medium power amplifier designed for X-band applications. The MPA provides typically 28dBm output power associated to... | |
| X-band Medium Power Amplifier. The CHA5115-99F is a monolithic two-stage GaAs medium power amplifier designed for X-band applications. The MPA provides typically 29dBm output power associated to 39% power added... |
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