Littelfuse, Inc. Datasheets for Transistors
Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
Transistors: Learn more
| Product Name | Notes |
|---|---|
| 350mA/200mA to 2.3A/1.9A sink/source Output Current Capabilities | |
| As opposed to the enhancement-mode MOSFETs, these depletion-mode devices operate in a ‘normally-on’ mode, requiring zero turn-on voltage at the gate terminal. With blocking voltages up to 1700V and low... | |
| Compact and powerful solution with X2PT igbts for either boost or brake chopper applications | |
| Depletion mode MOSFETs, unlike the regular enhancement type MOSFETs, require a negative gate bias to turn off. Consequently they remain on at or above zero gate bias voltage but otherwise... | |
| Designed using the proprietary thin-wafer XPT™ technology and state-of-the-art IGBT process, these devices display qualities such as reduced thermal resistance, low tail current, low energy loss, and high-speed switching capability. | |
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Power Semiconductors & Control ICs - IGBTs - XPT - Series: Trench - IXXK100N75B4H1 -- IXXK100N75B4H1
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Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art 4th generation (GenX4™) Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and... |
| Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art 5th generation (GenX5™) Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and... | |
| Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. | |
| Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability... | |
| Enhancement Mode | |
| Floating high-side driver enables bootstrap operation to 600V | |
| Industrial grade, single switch SiC mosfets built in a TO268 high voltage package with extra clearance and creepage for harsh, dirty industrial environmental conditions. | |
| IXTY2P50PA is an AEC-Q101 qualified and PPAP available, -500 V, -2 A, PolarTM P-channel enhancement mode power MOSFET in TO-252 (DPAK) package. The P-channel MOSFET is manufactured using the Polar... | |
| Littelfuse 1700V, 750mOhm Silicon Carbide (SiC) MOSFET bring SiC fast switching and energy saving performance to the 1700V voltage range, focusing on auxiliary power supplies. The MOSFET is available in... | |
| Littelfuse SiC MOSFETs are available in 14A, 18A, 25A, 50A and 70A nominal current rating. They are available in TO-247-4L package with a Kelvin source connection. Not only does the... | |
| Littelfuse Silicon Carbide (SiC) MOSFET LSIC1MO120E0080 1200 V come in ratings of 1200 V, 80 mOhm in a TO-247-3L package. Optimized for high frequency, high-efficiency applications Extremely low gate charge... | |
| Littelfuse Silicon Carbide (SiC) MOSFET LSIC1MO120E0120 1200 V come in ratings of 1200 V, 120 mOhm in a TO-247-3L package. Optimized for high frequency, high-efficiency applications Extremely low gate charge... | |
| Littelfuse Silicon Carbide (SiC) MOSFET LSIC1MO120E0160 1200 V come in ratings of 1200 V, 160 mOhm in a TO-247-3L package. Optimized for high frequency, high-efficiency applications Extremely low gate charge... | |
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Power Semiconductors & Control ICs - IGBTs - XPT - Series: Planar - IXYK100N65B3D1 -- IXYK100N65B3D1
Power Semiconductors & Control ICs - IGBTs - XPT - Series: Planar - IXYN100N65B3D1 -- IXYN100N65B3D1
Power Semiconductors & Control ICs - IGBTs - XPT - Series: Planar - IXYN120N65B3D1 -- IXYN120N65B3D1
Power Semiconductors & Control ICs - IGBTs - XPT - Series: Planar - IXYN120N65C3D1 -- IXYN120N65C3D1
Power Semiconductors & Control ICs - IGBTs - XPT - Series: Planar - IXYP10N65C3D1M -- IXYP10N65C3D1M
Power Semiconductors & Control ICs - IGBTs - XPT - Series: Planar - IXYP15N65C3D1M -- IXYP15N65C3D1M
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Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low... |
| Our new 1700V, 750mOhm Silicon Carbide (SiC) MOSFETs are presented in TO-263-7L package. The separated source pin reduces significantly the parasitic source inductance path to the driver, which helps improve... | |
| Our Surface Mount Power Device (SMPD) packaging technology is an expansion of the ISOPLUS™ package portfolio to include modules that can be assembled in standard surface mount (SMD) soldering processes... | |
| Polar™ P-Channel MOSFETS are fabricated using our Polar technology platform, which significantly reduces the on-state resistance (RDSon) by 30% and gate charge (Qg) by 40% in comparison to legacy counterparts,... | |
| Polar™ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to... | |
| Polar3™ Standard Power MOSFETs are suitable for a wide variety of power switching systems, including high-voltage power supplies, capacitor discharge circuits, pulse circuits, laser and x-ray generation systems, high-voltage automated... | |
| Power Semiconductors & Control ICs - Power Modules - IGBT Modules - Boost Choppers - Series: Boost Configuration XPT IGBT - MIXA225RF1200TSF | |
| Power Semiconductors & Control ICs - Power Modules - IGBT Modules - Buck Choppers - Series: Buck Configuration XPT IGBT - MIXA150Q1200VA | |
| Power Semiconductors & Control ICs - Power Modules - IGBT Modules - Phase Leg - Series: Phase Leg XPT IGBT - MIXA225PF1200TSF | |
| Power Semiconductors & Control ICs - Power Modules - IGBT Modules - Phase Leg - Series: Phase Leg XPT IGBT - MIXA300PF1200TSF | |
| Power Semiconductors & Control ICs - Power Modules - IGBT Modules - Phase Leg - Series: Phase Leg XPT IGBT - MIXA450PF1200TSF | |
| Power Semiconductors & Control ICs - Power Modules - IGBT Modules - Three-Phase Bridges - IGBT Modules - Series: Six Pack X2PT IGBT Module - MIXG120W1200TEH | |
| Power Semiconductors & Control ICs - Power Modules - IGBT Modules - Three-Phase Bridges - IGBT Modules - Series: Six Pack X2PT IGBT Module - MIXG180W1200PTEH | |
| Power Semiconductors & Control ICs - Power Modules - IGBT Modules - Three-Phase Bridges - IGBT Modules - Series: Six Pack X2PT IGBT Module - MIXG180W1200TEH | |
| Power Semiconductors & Control ICs - Power Modules - IGBT Modules - Three-Phase Bridges - IGBT Modules - Series: Six Pack X2PT IGBT Module - MIXG240W1200PZTEH | |
| Power Semiconductors & Control ICs - Power Modules - IGBT Modules - Three-Phase Bridges - IGBT Modules - Series: Six Pack X2PT IGBT Module - MIXG240W1200TEH | |
| Power Semiconductors & Control ICs - Power Modules - IGBT Modules - Three-Phase Bridges - IGBT Modules - Series: Six Pack XPT IGBT Module - MIXA100W1200TEH | |
| Power Semiconductors & Control ICs - Power Modules - IGBT Modules - Three-Phase Bridges - IGBT Modules - Series: Six Pack XPT IGBT Module - MIXA150W1200TEH | |
| Power Semiconductors & Control ICs - Power Modules - IGBT Modules - Three-Phase Bridges - IGBT Modules - Series: Six Pack XPT IGBT Module - MIXA30W1200TED | |
| Power Semiconductors & Control ICs - Power Modules - IGBT Modules - Three-Phase Bridges - IGBT Modules - Series: Six Pack XPT IGBT Module - MIXA40W1200TED | |
| Power Semiconductors & Control ICs - Power Modules - IGBT Modules - Three-Phase Bridges - IGBT Modules - Series: Six Pack XPT IGBT Module - MIXA80W1200PTEH | |
| Power Semiconductors & Control ICs - Power Modules - IGBT Modules - Three-Phase Bridges - IGBT Modules - Series: Six Pack XPT IGBT Module - MIXA80W1200TED | |
| Power Semiconductors & Control ICs - Power Modules - IGBT Modules - Three-Phase Bridges - IGBT Modules - Series: Six Pack XPT IGBT Module - MIXA80W1200TEH | |
| Rugged XPT igbts with fast switching SONIC diodes for high commutation robustness for switched reluctance motor drives or step up and step down converters. | |
| Single Package Driver for 3-Phase Motor Control and Power Inverters | |
| SMPD Package:DCB based isolated package improves thermal resistance and power handling capabilityIsolation voltage 2500V AC (RMS), 1 minuteLow drain-to-tab stray capacitanceOptimized package with separate driver source pinAdvanced topside cooled packaging... | |
| Tailored specifically for applications requiring Power MOSFETs to operate in their current saturation regions, these unique devices feature low thermal resistances, high power density, and extended Forward Bias Safe Operating... | |
| The boost configuration offers a compact and powerfull solution with 2nd generation X2PT igbts for either boost or brake chopper applications. | |
| The boost configuration offers a compact and powerfull solution with Trench igbts for either boost or brake chopper applications. | |
| The build in boost configuration offers a compact solution either in boost (PFC) or brake applications and in combination with buck series a solution for switched reluctance motor drives. | |
| The Converter + Brake + Inverter series utilizes rugged input rectifier diodes and short circuit rated XPT igbts in combination with fast switching SONIC free wheeling diodes. | |
| The High Voltage series of N-Channel Standard MOSFETs are suitable for a wide variety of power switching systems, including high-voltage power supplies, capacitor discharge circuits, pulse circuits, and current regulators. | |
| The Very High Voltage series of N-Channel Standard MOSFETs are specifically designed to address demanding, fast-switching power conversion applications requiring very high blocking voltages up to 4.5kV. Thanks to the... | |
| These devices are developed using a charge compensation principle and proprietary process technology, resulting in Power MOSFETs with significantly reduced resistance RDS(on) and gate charge Qg. A low on-state resistance... | |
| These devices are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600 Amperes (Tc=@25oC). The combined high current ratings of these... | |
| These Power MOSFETs based on Super Junction technology feature the lowest RDS(on) in 600V-800V class MOSFETs. Internal DCB isolation simplifies assembly and reduces thermal resistance from junction to heat sink. | |
| This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil driver applications. Primary use includes Ignition, Direct Fuel... | |
| This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel... | |
| This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil driver applications. Primary uses include Ignition, Direct Fuel... | |
| This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel... | |
| Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating... | |
| Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved... | |
| Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs | |
| Utilizing XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, these 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance, low losses,... | |
| Utilizing XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, these up to 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance,... | |
| Weighing only 8g, the SMPD package is much lighter (typically by 50%) than comparable conventional power modules, thereby enabling lower weight power systems. Due to its compact and ultra-low profile... | |
| When Power MOSFETs are used in the linear-mode operation, as opposed to their conventional switch-mode one, they are required to endure substantially high thermal and electrical stresses due to the... |
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