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Littelfuse, Inc. Datasheets for Transistors

Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
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Product Name Notes
1200V, 160mΩ, 19.5A 1200 V SiC MOSFET Phase-leg in SMPD
3-Phase Half-Bridge Gate Driver ICs Features: Single Package Driver for 3-Phase Motor Control and Power Inverters Three floating high-side drivers in bootstrap operation to 600V 350mA/200mA and 600mA/290mA sink/source Output...
As a pioneer of Press-Pack IGBT technology, we are able to offer a range of class leading devices with voltage ratings of 1.7kV (900V DC link), 2.5kV (1.25kV DC link),...
Designed using the proprietary thin-wafer XPT™ technology and state-of-the-art IGBT process, these devices display qualities such as reduced thermal resistance, low tail current, low energy loss, and high-speed switching capability.
Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art 5th generation (GenX5™) Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and...
Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities.
Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities.These...
Features: MOSFET Low RDS(ON) and QG Fast Switching Robust Design Avalanche Rated HiPerDynFRED High Performance Dynamic Fast Recovery Diode Consisting of series connected diodes Enhanced dynamic behavior for high frequency...
Half-Bridge Gate Driver ICs Features: 350mA/200mA to 2.3A/1.9A sink/source Output Current Capabilities Floating high-side driver enables bootstrap operation to 600V Wide 10V to 20V VCC operating voltage range Undervoltage Lockout...
High-Side and Low-Side Gate Driver ICs Features: Floating high-side driver enables bootstrap operation to 600V 600mA/290mA to 4.5/4.5A sink/source Output Current Capabilities Wide 10V to 20V VCC operating voltage range...
Industrial grade, single switch SiC mosfets built in a TO268 high voltage package with extra clearance and creepage for harsh, dirty industrial environmental conditions.
Littelfuse 1700V, 750mOhm Silicon Carbide (SiC) MOSFET bring SiC fast switching and energy saving performance to the 1700V voltage range, focusing on auxiliary power supplies. The MOSFET is available in...
Littelfuse SiC MOSFETs are available in 14A, 18A, 25A, 50A and 70A nominal current rating. They are available in TO-247-4L package with a Kelvin source connection. Not only does the...
Littelfuse Silicon Carbide (SiC) MOSFET LSIC1MO120E0080 1200 V come in ratings of 1200 V, 80 mOhm in a TO-247-3L package. Features: Optimized for high frequency, high-efficiency applications Extremely low gate...
Littelfuse Silicon Carbide (SiC) MOSFET LSIC1MO120E0120 1200 V come in ratings of 1200 V, 120 mOhm in a TO-247-3L package. Features: Optimized for high frequency, high-efficiency applications Extremely low gate...
Littelfuse Silicon Carbide (SiC) MOSFET LSIC1MO120E0160 1200 V come in ratings of 1200 V, 160 mOhm in a TO-247-3L package. Features: Optimized for high frequency, high-efficiency applications Extremely low gate...
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low...
Modules with built in rugged, short circuit rated XPT igbts and fast switching SONIC free wheeling diodes for high commutation robustness in phase leg configuration designed for motor drive inverter.
Our new 1700V, 750mOhm Silicon Carbide (SiC) MOSFETs are presented in TO-263-7L package. The separated source pin reduces significantly the parasitic source inductance path to the driver, which helps improve...
Our Surface Mount Power Device (SMPD) packaging technology is an expansion of the ISOPLUS™ package portfolio to include modules that can be assembled in standard surface mount (SMD) soldering processes...
Rugged XPT igbts with fast switching SONIC diodes for high commutation robustness for switched reluctance motor drives or step up and step down converters.
The boost configuration offers a compact and powerfull solution with 2nd generation X2PT igbts for either boost or brake chopper applications.
The boost configuration offers a compact and powerfull solution with Trench igbts for either boost or brake chopper applications.
The build in boost configuration offers a compact solution either in boost (PFC) or brake applications and in combination with buck series a solution for switched reluctance motor drives.
The Converter + Brake + Inverter series utilizes rugged input rectifier diodes and short circuit rated Trench igbts in combination with fast switching SONIC free wheeling diodes.
The Converter + Brake + Inverter series utilizes rugged input rectifier diodes and short circuit rated XPT igbts in combination with fast switching SONIC free wheeling diodes.
The integrated buck functionality offers a compact solution for power step down converters and in combination with modules in boost configuration for switched reluctance motor drives.
The Littelfuse Silicon Carbide (SiC) MOSFET LSIC1MO170E1000 is rated at 1700 V, 1 Ohm in a TO-247-3L package. Features: Optimized for high-frequency, high-efficiency applications Extremely low gate charge and output...
The PFC Mosfet modlue series offers a rugged input rectifier bridge and a Mosfet with a fast diode in boost (PFC) configuration.
The SixPack series utilizes rugged and short circuit 2nd generation X2PT igbts and fast switching SONIC diodes for motor drive inverters or active front end rectifieres.Some types offer in the...
The SixPack series utilizes rugged and short circuit XPT igbts and fast switching SONIC diodes for motor drive inverters or active front end rectifieres.
These Mosfets module series offers a SixPack configuration with fast swtching Trench Mosfets with low Rdson and rugged freewheeling body diode
These Power MOSFETs based on Super Junction technology feature the lowest RDS(on) in 600V-800V class MOSFETs. Internal DCB isolation simplifies assembly and reduces thermal resistance from junction to heat sink.
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil driver applications. Primary use includes Ignition, Direct Fuel...
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil driver applications. Primary uses include Ignition, Direct Fuel...
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel...
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include motorbike ignition, Direct...
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil driver applications. Primary uses include Ignition, Direct Fuel...
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel...
Utilizing XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, these 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance, low losses,...
Utilizing XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, these up to 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance,...
Weighing only 8g, the SMPD package is much lighter (typically by 50%) than comparable conventional power modules, thereby enabling lower weight power systems. Due to its compact and ultra-low profile...

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