The IXYH40N120B4 is a 1200V, 40A IGBT designed for switching applications between 5 and 30 kHz, featuring optimized switching losses and a positive thermal coefficient of Vce(sat) to enable parallel operation. It is packaged in a TO-247 case with a thermal resistance of 0.22 °C/W from junction to case. Rated for continuous collector current of 40 A at 110°C and peak pulse current of 250 A at 25°C, it operates with a gate-emitter voltage range of ±20 V continuous and ±30 V transient. The device meets international standard package requirements and is rated for junction and storage temperatures from −55°C to 175°C. It supports clamped inductive switching with a RBSOA of 80 A at 150°C and 15 V gate drive.
Utilizing XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, these 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance, low losses, high current densities and low gate charge requirement. A positive collector-to-emitter
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXYH40N120B4 |
| Product Name | Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs |
| VCES | 1200 volts |
