The IXXH60N65C4 is a 650V XPT trench IGBT in a TO-247 package, designed for switching applications between 20 and 60 kHz. It has a continuous collector current rating of 60 A at 110°C and a peak collector current of 260 A at 25°C for 1 ms. The device features a collector-emitter saturation voltage of 2.4 V at 60 A and 15 V gate-emitter voltage, and a thermal resistance from junction to case of 0.28 °C/W. It supports a maximum junction temperature of 175°C and includes a square reverse bias safe operating area (RBSOA) and a 10 μs short-circuit safe operating area. The IGBT is rated for a gate-emitter voltage of ±20 V continuous and ±30 V transient, and meets RoHS standards. It is suited for power inverters, motor drives, UPS, SMPS, PFC circuits, battery chargers, welding machines, and lamp ballasts.
Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10µs Short Circuit Safe Operating Area (SCSOA).These IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) and with 650V breakdown voltage, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXXH60N65C4 |
| Product Name | Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs |
| VCES | 650 volts |
