Littelfuse, Inc. 1700V - 4500V XPT™ (eXtreme-light Punch Through) IGBTs IXYH25N250CHV

Description
Designed using the proprietary thin-wafer XPT™ technology and state-of-the-art IGBT process, these devices display qualities such as reduced thermal resistance, low tail current, low energy loss, and high-speed switching capability. Thanks to the positive temperature coefficient of their on-state voltage, these high-voltage IGBTs can be used in parallel, which provides cost-effective solutions compared to series-connected, lower-voltage devices. Consequently, this results in reduction in the associated gate drive circuitry, simplicity in design, and improvement in the reliability of the overall system. The optional co-packed fast recovery diodes have low reverse recovery time and are optimized to produce smooth switching waveforms and significantly lower electromagnetic interference (EMI). Advantages: Higher efficiency Elimination of multiple series-connected devices Increased reliability of power systems Thin wafer XPT™ technology Low on-state voltages VCE(sat) Co-packed fast recovery diodes Positive temperature coefficient of VCE(sat) International standard size high-voltage packages
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Description
Designed using the proprietary thin-wafer XPT™ technology and state-of-the-art IGBT process, these devices display qualities such as reduced thermal resistance, low tail current, low energy loss, and high-speed switching capability. Thanks to the positive temperature coefficient of their on-state voltage, these high-voltage IGBTs can be used in parallel, which provides cost-effective solutions compared to series-connected, lower-voltage devices. Consequently, this results in reduction in the associated gate drive circuitry, simplicity in design, and improvement in the reliability of the overall system. The optional co-packed fast recovery diodes have low reverse recovery time and are optimized to produce smooth switching waveforms and significantly lower electromagnetic interference (EMI). Advantages: Higher efficiency Elimination of multiple series-connected devices Increased reliability of power systems Thin wafer XPT™ technology Low on-state voltages VCE(sat) Co-packed fast recovery diodes Positive temperature coefficient of VCE(sat) International standard size high-voltage packages
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Datasheet
Datasheet Summary
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The IXYH25N250CHV is a 2500 V, 25 A XPTtm IGBT in a TO-247HV package, designed for high-voltage switching applications such as switch-mode power supplies, UPS systems, and capacitor discharge circuits. It has a maximum collector-emitter voltage of 2500 V, a continuous collector current of 25 A at 110°C, and a peak collector current of 235 A for 1 ms. The device exhibits a low saturation voltage of 3.4 to 4.0 V at 25°C and 4.7 V at 150°C with a gate-emitter voltage of 15 V. Thermal resistance from junction to case is 0.21 °C/W in the TO-247HV package. It operates with a junction temperature range of -55°C to 175°C and meets RoHS standards. The package is designed for high blocking voltage and low gate drive requirements.

Datasheet Summary
Powered by GS/AI

The IXYH25N250CHV is a 2500 V, 25 A XPTtm IGBT in a TO-247HV package, designed for high-voltage switching applications such as switch-mode power supplies, UPS systems, and capacitor discharge circuits. It has a maximum collector-emitter voltage of 2500 V, a continuous collector current of 25 A at 110°C, and a peak collector current of 235 A for 1 ms. The device exhibits a low saturation voltage of 3.4 to 4.0 V at 25°C and 4.7 V at 150°C with a gate-emitter voltage of 15 V. Thermal resistance from junction to case is 0.21 °C/W in the TO-247HV package. It operates with a junction temperature range of -55°C to 175°C and meets RoHS standards. The package is designed for high blocking voltage and low gate drive requirements.

Suppliers

Company
Product
Description
Supplier Links
1700V - 4500V XPT™ (eXtreme-light Punch Through) IGBTs - IXYH25N250CHV - Littelfuse, Inc.
Rosemont, IL, United States
1700V - 4500V XPT™ (eXtreme-light Punch Through) IGBTs
IXYH25N250CHV
1700V - 4500V XPT™ (eXtreme-light Punch Through) IGBTs IXYH25N250CHV
Designed using the proprietary thin-wafer XPT™ technology and state-of-the-art IGBT process, these devices display qualities such as reduced thermal resistance, low tail current, low energy loss, and high-speed switching capability. Thanks to the positive temperature coefficient of their on-state voltage, these high-voltage IGBTs can be used in parallel, which provides cost-effective solutions compared to series-connected, lower-voltage devices. Consequently, this results in reduction in the associated gate drive circuitry, simplicity in design, and improvement in the reliability of the overall system. The optional co-packed fast recovery diodes have low reverse recovery time and are optimized to produce smooth switching waveforms and significantly lower electromagnetic interference (EMI). Advantages: Higher efficiency Elimination of multiple series-connected devices Increased reliability of power systems Thin wafer XPT™ technology Low on-state voltages VCE(sat) Co-packed fast recovery diodes Positive temperature coefficient of VCE(sat) International standard size high-voltage packages

Designed using the proprietary thin-wafer XPT™ technology and state-of-the-art IGBT process, these devices display qualities such as reduced thermal resistance, low tail current, low energy loss, and high-speed switching capability. Thanks to the positive temperature coefficient of their on-state voltage, these high-voltage IGBTs can be used in parallel, which provides cost-effective solutions compared to series-connected, lower-voltage devices. Consequently, this results in reduction in the associated gate drive circuitry, simplicity in design, and improvement in the reliability of the overall system. The optional co-packed fast recovery diodes have low reverse recovery time and are optimized to produce smooth switching waveforms and significantly lower electromagnetic interference (EMI). Advantages: Higher efficiency Elimination of multiple series-connected devices Increased reliability of power systems Thin wafer XPT™ technology Low on-state voltages VCE(sat) Co-packed fast recovery diodes Positive temperature coefficient of VCE(sat) International standard size high-voltage packages

Supplier's Site Datasheet
IGBTs - 1464255 - RS Components, Ltd.
Corby, Northants, United Kingdom
IGBTs
1464255
IGBTs 1464255
XPT IGBT 25A 2500V TO247

XPT IGBT 25A 2500V TO247

Supplier's Site
IGBTs - 1464357 - RS Components, Ltd.
Corby, Northants, United Kingdom
IGBTs
1464357
IGBTs 1464357
XPT IGBT 25A 2500V TO247

XPT IGBT 25A 2500V TO247

Supplier's Site
Transistor, Igbt, 2.5Kv, 95A, To-247Hv; Continuous Collector Current Littelfuse - 03AH2038 - Newark, An Avnet Company
Chicago, IL, United States
Transistor, Igbt, 2.5Kv, 95A, To-247Hv; Continuous Collector Current Littelfuse
03AH2038
Transistor, Igbt, 2.5Kv, 95A, To-247Hv; Continuous Collector Current Littelfuse 03AH2038
TRANSISTOR, IGBT, 2.5KV, 95A, TO-247HV; Continuous Collector Current:95A; Collector Emitter Saturation Voltage:3.4V; Power Dissipation:937W; Collector Emitter Voltage Max:2.5kV; No. of Pins:3Pins; Operating Temperature Max:175°C RoHS Compliant: Yes

TRANSISTOR, IGBT, 2.5KV, 95A, TO-247HV; Continuous Collector Current:95A; Collector Emitter Saturation Voltage:3.4V; Power Dissipation:937W; Collector Emitter Voltage Max:2.5kV; No. of Pins:3Pins; Operating Temperature Max:175°C RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. RS Components, Ltd. Newark, An Avnet Company
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number IXYH25N250CHV 1464255 03AH2038
Product Name 1700V - 4500V XPT™ (eXtreme-light Punch Through) IGBTs IGBTs Transistor, Igbt, 2.5Kv, 95A, To-247Hv; Continuous Collector Current Littelfuse
VCES 2500 volts
VCE(on) 4 volts
IC(max) 95 amps
Package Type TO-247; TO-247HV To247hv TO-3; TO-247
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