The IXYT30N65C3H1HV is a 650V IGBT designed for 20-60kHz switching applications, featuring a TO-268HV package. It has a continuous collector current rating of 30A at 110°C and a peak collector current of 118A for 1ms. The device exhibits a collector-emitter saturation voltage of 2.35V to 2.70V at 30A and 15V gate-emitter voltage, with a turn-on time of 42ns and turn-off time of 75ns at 25°C. It includes an anti-parallel sonic diode with a forward voltage of 2.5V at 30A and a reverse recovery time of 120ns at 150°C. The IGBT is avalanche-rated, has a square RBSOA, and supports short-circuit operation for 8μs. Thermal resistance from junction to case is 0.55°C/W. Operating junction temperature ranges from -55°C to 175°C.
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXYT30N65C3H1HV |
| Product Name | 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs |
| VCES | 650 volts |
