The IXYN100N65B3D1 is a 650V IGBT with a 100A continuous collector current rating at 110°C, designed for switching applications in the 10-30 kHz range. It is housed in a SOT-227B miniBLOC package, weighing 30 g, and includes an anti-parallel fr diode. The device has a maximum collector-emitter voltage of 650 V, a gate-emitter voltage rating of ±20 V continuous and ±30 V transient, and a short-circuit withstand time of 8 μs. It features square RBSOA, 2500 V~ isolation voltage, and a mounting torque of 1.5 Nm. Thermal resistance from junction to case is 0.25 °C/W for the IGBT and 0.40 °C/W for the diode. Its collector-emitter saturation voltage is 1.85 V at 70 A and 15 V gate drive. Maximum junction temperature is 175°C.
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXYN100N65B3D1 |
| Product Name | Power Semiconductors & Control ICs - IGBTs - XPT - Series: Planar - IXYN100N65B3D1 |
| VCES | 650 volts |
