IGBT MODULE 1200V 290A 1050W D3
IGBT MODULE, DUAL NPN, 1.2KV, 290A; Continuous Collector Current:290A; Collector Emitter Saturation Voltage:1.7V; Power Dissipation:1.05kW; Operating Temperature Max:125°C; IGBT Termination:Stud; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes
IGBT Modules 1200V 200A Dual
| Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | MG12200D-BN2MM | 31Y2586 | MG12200D-BN2MM |
| Product Name | Discrete Semiconductor Products - Transistors - IGBTs | Igbt Module, Dual Npn, 1.2Kv, 290A; Continuous Collector Current Littelfuse | IGBT Modules |
| Packing Method | Bulk; Bulk |
