The IXYX110N120A4 is a 1200V XPT Trench IGBT designed for high-power switching applications up to 5 kHz, featuring a PLUS247 package and a thermal resistance of 0.11 °C/W junction-to-case. It supports a continuous collector current of 110 A at 110 °C and a peak pulse current of 900 A, with a collector-emitter saturation voltage of 1.45 to 1.80 V at 110 A and 15 V gate drive. The device has a positive thermal coefficient for Vce(sat), enabling reliable paralleling, and meets international standard package requirements. It is qualified for operation from -55 °C to 175 °C junction temperature and is suitable for inverters, UPS, motor drives, SMPS, PFC circuits, battery chargers, welding machines, lamp ballasts, and inrush current protection.
Utilizing XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, these up to 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance, low losses, high current densities and low gate charge requirement. A positive collector-to-emitter
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXYX110N120A4 |
| Product Name | Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs |
| VCES | 1200 volts |
