The IXYN110N120C4H1 is a 1200V, 110A XPT Gen4 IGBT with an anti-parallel sonic diode, designed for 20-50 kHz switching in applications such as inverters, motor drives, and SMPS. It is packaged in a miniBLOC (SOT-227B) case with a baseplate, measuring 31.50-31.88 mm in length and 37.80-38.23 mm in height. The device has a collector-emitter saturation voltage of 2.40 V at 110 A and 25℃, a gate charge of 330 nC, and a maximum junction temperature of 175℃. It provides 2500 VAC isolation and a thermal resistance from junction to case of 0.18 °C/W. The IGBT features a positive thermal coefficient of V₌E(sat) and high surge current capability up to 760 A.
Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. These IGBTs have breakdown voltage from 650V till 1200V, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXYN110N120C4H1 |
| Product Name | Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs |
| VCES | 1200 volts |
