The IXYP20N120B4 is a 1200V, 20A continuous IGBT in a TO-220 package, optimized for switching frequencies between 5 kHz and 30 kHz. It has a maximum collector-emitter voltage of 1200 V, a collector current rating of 20 A at 110°C, and a peak collector current of 130 A for 1 ms. The saturated collector-emitter voltage is 2.10 V at 25°C and 20 A gate drive, with a positive temperature coefficient. Thermal resistance from junction to case is 0.50 °C/W. The device is rated for junction temperatures from -55°C to 175°C and meets international standard package requirements. It is suited for power inverters, UPS, motor drives, SMPS, battery chargers, and welding machines.
Utilizing XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, these 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance, low losses, high current densities and low gate charge requirement. A positive collector-to-emitter
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXYP20N120B4 |
| Product Name | Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs |
| VCES | 1200 volts |
