Littelfuse, Inc. 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXXH30N60B3D1

Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
  • 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs - IXXH30N60B3D1 - Littelfuse, Inc.
    Littelfuse, Inc.
Request a Quote
Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The IXXH30N60B3D1 is a 600V IGBT with an integrated ultra-fast anti-parallel diode, designed for switching applications between 5 and 30 kHz. It is packaged in a TO-247 AD case, weighs 6 grams, and is rated for junction temperatures from -55°C to 175°C. The device has a continuous collector current of 30 A at 110°C and a maximum pulsed collector current of 115 A. The collector-to-emitter saturation voltage is 1.85 V at 25°C and 24 A gate current, and the short-circuit withstand time is 10 µs under specified clamped inductive load conditions. It features a square RBSOA, avalanche capability, and a thermal resistance from junction to case of 0.55 °C/W. The device is qualified with an international standard package and supports high power density applications including motor drives, UPS, and PFC circuits.

Datasheet Summary
Powered by GS/AI

The IXXH30N60B3D1 is a 600V IGBT with an integrated ultra-fast anti-parallel diode, designed for switching applications between 5 and 30 kHz. It is packaged in a TO-247 AD case, weighs 6 grams, and is rated for junction temperatures from -55°C to 175°C. The device has a continuous collector current of 30 A at 110°C and a maximum pulsed collector current of 115 A. The collector-to-emitter saturation voltage is 1.85 V at 25°C and 24 A gate current, and the short-circuit withstand time is 10 µs under specified clamped inductive load conditions. It features a square RBSOA, avalanche capability, and a thermal resistance from junction to case of 0.55 °C/W. The device is qualified with an international standard package and supports high power density applications including motor drives, UPS, and PFC circuits.

Suppliers

Company
Product
Description
Supplier Links
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs - IXXH30N60B3D1 - Littelfuse, Inc.
Littelfuse, Inc.
Rosemont, IL, United States
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
IXXH30N60B3D1
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXXH30N60B3D1
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Supplier's Site Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
IGBT Transistor
279-IXXH30N60B3D1
IGBT Transistor 279-IXXH30N60B3D1
Insulated Gate Bipolar Transistor, Product overview: IXXH30N60B3D1 from Littelfuse is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IXXH30N60B3D1 can be used for catalog matching and distributor lookup.

Insulated Gate Bipolar Transistor, Product overview: IXXH30N60B3D1 from Littelfuse is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IXXH30N60B3D1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
LCSC Electronics Technology (HK) Limited
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> IGBTs
IXXH30N60B3D1
Triode/MOS Tube/Transistor >> IGBTs IXXH30N60B3D1
270W 60A 600V TO-247-3 IGBTs ROHS

270W 60A 600V TO-247-3 IGBTs ROHS

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD. LCSC Electronics Technology (HK) Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number IXXH30N60B3D1 279-IXXH30N60B3D1 IXXH30N60B3D1
Product Name 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IGBT Transistor Triode/MOS Tube/Transistor >> IGBTs
VCES 600 volts 600 volts
VCE(on) 1.85 volts
IC(max) 60 amps
Unlock Full Specs
to access all available technical data