The IXYA48N65A5 is a 650 V, 48 A Gen5 XPT™ IGBT in a TO-263-2L package, designed for switching applications up to 5 kHz. It features a collector-emitter saturation voltage of 1.40 V at 30 A and 15 V gate drive, a thermal resistance junction-to-case of 0.46 °C/W, and a maximum junction temperature of 175 °C. The device has a square reverse-biased safe operating area and supports a pulsed collector current of 236 A. Its gate-emitter threshold voltage ranges from 3.7 to 5.8 V, with a gate-emitter leakage current of up to 100 nA. The package dimensions are specified with a body width of 8.38 to 9.40 mm and a height of 14.61 to 15.88 mm. The part meets RoHS standards and is qualified for industrial use with no explicit automotive or military certifications stated.
Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art 5th generation (GenX5™) Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities.These IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) and with 650V breakdown voltage, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXYA48N65A5 |
| Product Name | Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs |
| VCES | 650 volts |
