Littelfuse, Inc. Ignition IGBT, N-Channel, 20 A, 450 V LGB8245TI

Description
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or whatever high voltage and high current switching is required. End Products: Automotive Ideal for Coil-on-Plug and Driver-on-Coil Applications Gate-Emitter ESD Protection Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load. Integrated ESD Diode Protection Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Optional Gate Resistor (RG) and Gate-Emitter Resistor (RGE)
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Description
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or whatever high voltage and high current switching is required. End Products: Automotive Ideal for Coil-on-Plug and Driver-on-Coil Applications Gate-Emitter ESD Protection Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load. Integrated ESD Diode Protection Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Optional Gate Resistor (RG) and Gate-Emitter Resistor (RGE)
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Datasheet
Datasheet Summary
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The LGB8245TI is a 450 V, 20 A N-channel ignition IGBT in a D2PAK package, designed for high-voltage, high-current switching applications such as ignition systems and direct fuel injection. It features a continuous collector current rating of 20 A, a peak pulsed current of 50 A, and a collector-emitter saturation voltage of up to 2.00 V at 15 A and 4.0 V gate-emitter voltage. The device has a thermal resistance junction-to-case of 1.0 °C/W and operates over a temperature range of -55 °C to +175 °C. It is AEC-Q101 qualified and includes ESD protection with an 8.0 kV human body model rating. The gate-emitter voltage is limited to ±15 V, and it supports low threshold voltage operation for direct logic-level interfacing.

Datasheet Summary
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The LGB8245TI is a 450 V, 20 A N-channel ignition IGBT in a D2PAK package, designed for high-voltage, high-current switching applications such as ignition systems and direct fuel injection. It features a continuous collector current rating of 20 A, a peak pulsed current of 50 A, and a collector-emitter saturation voltage of up to 2.00 V at 15 A and 4.0 V gate-emitter voltage. The device has a thermal resistance junction-to-case of 1.0 °C/W and operates over a temperature range of -55 °C to +175 °C. It is AEC-Q101 qualified and includes ESD protection with an 8.0 kV human body model rating. The gate-emitter voltage is limited to ±15 V, and it supports low threshold voltage operation for direct logic-level interfacing.

Suppliers

Company
Product
Description
Supplier Links
Ignition IGBT, N-Channel, 20 A, 450 V - LGB8245TI - Littelfuse, Inc.
Rosemont, IL, United States
Ignition IGBT, N-Channel, 20 A, 450 V
LGB8245TI
Ignition IGBT, N-Channel, 20 A, 450 V LGB8245TI
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or whatever high voltage and high current switching is required. End Products: Automotive Ideal for Coil-on-Plug and Driver-on-Coil Applications Gate-Emitter ESD Protection Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load. Integrated ESD Diode Protection Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Optional Gate Resistor (RG) and Gate-Emitter Resistor (RGE)

This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or whatever high voltage and high current switching is required. End Products: Automotive Ideal for Coil-on-Plug and Driver-on-Coil Applications Gate-Emitter ESD Protection Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load. Integrated ESD Diode Protection Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Optional Gate Resistor (RG) and Gate-Emitter Resistor (RGE)

Supplier's Site Datasheet
Single IGBTs - 18-LGB8245TITR-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
18-LGB8245TITR-ND
Single IGBTs 18-LGB8245TITR-ND
IGBT

IGBT

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Technical Specifications

  Littelfuse, Inc. DigiKey
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number LGB8245TI 18-LGB8245TITR-ND
Product Name Ignition IGBT, N-Channel, 20 A, 450 V Single IGBTs
VCE(on) 1.1 volts
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