Littelfuse, Inc. 1700V - 4500V XPT™ (eXtreme-light Punch Through) IGBTs IXYH30N450HV

Description
Designed using the proprietary thin-wafer XPT™ technology and state-of-the-art IGBT process, these devices display qualities such as reduced thermal resistance, low tail current, low energy loss, and high-speed switching capability. Thanks to the positive temperature coefficient of their on-state voltage, these high-voltage IGBTs can be used in parallel, which provides cost-effective solutions compared to series-connected, lower-voltage devices. Consequently, this results in reduction in the associated gate drive circuitry, simplicity in design, and improvement in the reliability of the overall system. The optional co-packed fast recovery diodes have low reverse recovery time and are optimized to produce smooth switching waveforms and significantly lower electromagnetic interference (EMI). Advantages: Higher efficiency Elimination of multiple series-connected devices Increased reliability of power systems Thin wafer XPT™ technology Low on-state voltages VCE(sat) Co-packed fast recovery diodes Positive temperature coefficient of VCE(sat) International standard size high-voltage packages
Request a Quote Datasheet
Description
Designed using the proprietary thin-wafer XPT™ technology and state-of-the-art IGBT process, these devices display qualities such as reduced thermal resistance, low tail current, low energy loss, and high-speed switching capability. Thanks to the positive temperature coefficient of their on-state voltage, these high-voltage IGBTs can be used in parallel, which provides cost-effective solutions compared to series-connected, lower-voltage devices. Consequently, this results in reduction in the associated gate drive circuitry, simplicity in design, and improvement in the reliability of the overall system. The optional co-packed fast recovery diodes have low reverse recovery time and are optimized to produce smooth switching waveforms and significantly lower electromagnetic interference (EMI). Advantages: Higher efficiency Elimination of multiple series-connected devices Increased reliability of power systems Thin wafer XPT™ technology Low on-state voltages VCE(sat) Co-packed fast recovery diodes Positive temperature coefficient of VCE(sat) International standard size high-voltage packages
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
1700V - 4500V XPT™ (eXtreme-light Punch Through) IGBTs - IXYH30N450HV - Littelfuse, Inc.
Rosemont, IL, United States
1700V - 4500V XPT™ (eXtreme-light Punch Through) IGBTs
IXYH30N450HV
1700V - 4500V XPT™ (eXtreme-light Punch Through) IGBTs IXYH30N450HV
Designed using the proprietary thin-wafer XPT™ technology and state-of-the-art IGBT process, these devices display qualities such as reduced thermal resistance, low tail current, low energy loss, and high-speed switching capability. Thanks to the positive temperature coefficient of their on-state voltage, these high-voltage IGBTs can be used in parallel, which provides cost-effective solutions compared to series-connected, lower-voltage devices. Consequently, this results in reduction in the associated gate drive circuitry, simplicity in design, and improvement in the reliability of the overall system. The optional co-packed fast recovery diodes have low reverse recovery time and are optimized to produce smooth switching waveforms and significantly lower electromagnetic interference (EMI). Advantages: Higher efficiency Elimination of multiple series-connected devices Increased reliability of power systems Thin wafer XPT™ technology Low on-state voltages VCE(sat) Co-packed fast recovery diodes Positive temperature coefficient of VCE(sat) International standard size high-voltage packages

Designed using the proprietary thin-wafer XPT™ technology and state-of-the-art IGBT process, these devices display qualities such as reduced thermal resistance, low tail current, low energy loss, and high-speed switching capability. Thanks to the positive temperature coefficient of their on-state voltage, these high-voltage IGBTs can be used in parallel, which provides cost-effective solutions compared to series-connected, lower-voltage devices. Consequently, this results in reduction in the associated gate drive circuitry, simplicity in design, and improvement in the reliability of the overall system. The optional co-packed fast recovery diodes have low reverse recovery time and are optimized to produce smooth switching waveforms and significantly lower electromagnetic interference (EMI). Advantages: Higher efficiency Elimination of multiple series-connected devices Increased reliability of power systems Thin wafer XPT™ technology Low on-state voltages VCE(sat) Co-packed fast recovery diodes Positive temperature coefficient of VCE(sat) International standard size high-voltage packages

Supplier's Site Datasheet
Singapore
900V 165A 830000mW IGBT Transistor
279-IXYH30N450HV
900V 165A 830000mW IGBT Transistor 279-IXYH30N450HV
Trans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247 Product overview: IXYH30N450HV from Littelfuse is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 900V, 165A, 830000mW. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 900V, 165A, 830000mW. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IXYH30N450HV can be used for catalog matching and distributor lookup.

Trans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247 Product overview: IXYH30N450HV from Littelfuse is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 900V, 165A, 830000mW. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 900V, 165A, 830000mW. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IXYH30N450HV can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Igbt, 4.5Kv, 60A, 150Deg C, 430W; Continuous Collector Current Littelfuse - 03AH2045 - Newark, An Avnet Company
Chicago, IL, United States
Igbt, 4.5Kv, 60A, 150Deg C, 430W; Continuous Collector Current Littelfuse
03AH2045
Igbt, 4.5Kv, 60A, 150Deg C, 430W; Continuous Collector Current Littelfuse 03AH2045
IGBT, 4.5KV, 60A, 150DEG C, 430W; Continuous Collector Current:60A; Collector Emitter Saturation Voltage:3.2V; Power Dissipation:430W; Collector Emitter Voltage Max:4.5kV; No. of Pins:3Pins; Operating Temperature Max:150°C RoHS Compliant: Yes

IGBT, 4.5KV, 60A, 150DEG C, 430W; Continuous Collector Current:60A; Collector Emitter Saturation Voltage:3.2V; Power Dissipation:430W; Collector Emitter Voltage Max:4.5kV; No. of Pins:3Pins; Operating Temperature Max:150°C RoHS Compliant: Yes

Supplier's Site Datasheet
Transistor, 4.5Kv, 60A, To-247Hv Rohs Compliant Littelfuse - 29AK0504 - Newark, An Avnet Company
Chicago, IL, United States
Transistor, 4.5Kv, 60A, To-247Hv Rohs Compliant Littelfuse
29AK0504
Transistor, 4.5Kv, 60A, To-247Hv Rohs Compliant Littelfuse 29AK0504
TRANSISTOR, 4.5KV, 60A, TO-247HV ROHS COMPLIANT: YES

TRANSISTOR, 4.5KV, 60A, TO-247HV ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company Newark, An Avnet Company
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Transistors
Product Number IXYH30N450HV 279-IXYH30N450HV 03AH2045 29AK0504
Product Name 1700V - 4500V XPT™ (eXtreme-light Punch Through) IGBTs 900V 165A 830000mW IGBT Transistor Igbt, 4.5Kv, 60A, 150Deg C, 430W; Continuous Collector Current Littelfuse Transistor, 4.5Kv, 60A, To-247Hv Rohs Compliant Littelfuse
VCES 4500 volts
VCE(on) 3.9 volts
IC(max) 60 amps
Package Type TO-247; TO-247HV TO-3 TO-3; TO-247
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