Littelfuse, Inc. 100V - 1700V N-Channel Depletion Mode Power MOSFETs IXTY1R6N100D2

Description
As opposed to the enhancement-mode MOSFETs, these depletion-mode devices operate in a ‘normally-on’ mode, requiring zero turn-on voltage at the gate terminal. With blocking voltages up to 1700V and low drain-to-source resistances they provide simplified control and reduced power dissipation in systems that are continuously “on” (emergency or burglar alarms, for instance). Normally on operation Linear mode tolerant Low RDS(on) Useable body diode Internal standard packages UL 94 V-0 Flammability qualified (molding epoxies)
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Description
As opposed to the enhancement-mode MOSFETs, these depletion-mode devices operate in a ‘normally-on’ mode, requiring zero turn-on voltage at the gate terminal. With blocking voltages up to 1700V and low drain-to-source resistances they provide simplified control and reduced power dissipation in systems that are continuously “on” (emergency or burglar alarms, for instance). Normally on operation Linear mode tolerant Low RDS(on) Useable body diode Internal standard packages UL 94 V-0 Flammability qualified (molding epoxies)
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Datasheet
Datasheet Summary
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The IXTY1R6N100D2 is a normally-on N-channel depletion mode MOSFET designed for applications requiring simplified gate control and continuous conduction, such as audio amplifiers, start-up circuits, and protection circuits. It is packaged in a TO-252 format, weighing 0.35 g, with a maximum drain-source voltage of 1000 V, a continuous drain current of 1.6 A, and a drain-source on-resistance of 10 Ω. The device operates with a junction temperature range of -55 °C to 150 °C and a maximum lead temperature for soldering of 260 °C for 10 seconds. Molding compounds meet UL 94 V-0 flammability classification. Thermal resistance from junction to case is 1.25 °C/W. Gate-source voltage limits are ±20 V continuous and ±30 V transient. The intrinsic source-drain diode has a forward voltage of 0.8 to 1.3 V at 1.6 A and a maximum repetitive peak reverse current of 9.96 A.

Datasheet Summary
Powered by GS/AI

The IXTY1R6N100D2 is a normally-on N-channel depletion mode MOSFET designed for applications requiring simplified gate control and continuous conduction, such as audio amplifiers, start-up circuits, and protection circuits. It is packaged in a TO-252 format, weighing 0.35 g, with a maximum drain-source voltage of 1000 V, a continuous drain current of 1.6 A, and a drain-source on-resistance of 10 Ω. The device operates with a junction temperature range of -55 °C to 150 °C and a maximum lead temperature for soldering of 260 °C for 10 seconds. Molding compounds meet UL 94 V-0 flammability classification. Thermal resistance from junction to case is 1.25 °C/W. Gate-source voltage limits are ±20 V continuous and ±30 V transient. The intrinsic source-drain diode has a forward voltage of 0.8 to 1.3 V at 1.6 A and a maximum repetitive peak reverse current of 9.96 A.

Suppliers

Company
Product
Description
Supplier Links
100V - 1700V N-Channel Depletion Mode Power MOSFETs - IXTY1R6N100D2 - Littelfuse, Inc.
Rosemont, IL, United States
100V - 1700V N-Channel Depletion Mode Power MOSFETs
IXTY1R6N100D2
100V - 1700V N-Channel Depletion Mode Power MOSFETs IXTY1R6N100D2
As opposed to the enhancement-mode MOSFETs, these depletion-mode devices operate in a ‘normally-on’ mode, requiring zero turn-on voltage at the gate terminal. With blocking voltages up to 1700V and low drain-to-source resistances they provide simplified control and reduced power dissipation in systems that are continuously “on” (emergency or burglar alarms, for instance). Normally on operation Linear mode tolerant Low RDS(on) Useable body diode Internal standard packages UL 94 V-0 Flammability qualified (molding epoxies)

As opposed to the enhancement-mode MOSFETs, these depletion-mode devices operate in a ‘normally-on’ mode, requiring zero turn-on voltage at the gate terminal. With blocking voltages up to 1700V and low drain-to-source resistances they provide simplified control and reduced power dissipation in systems that are continuously “on” (emergency or burglar alarms, for instance). Normally on operation Linear mode tolerant Low RDS(on) Useable body diode Internal standard packages UL 94 V-0 Flammability qualified (molding epoxies)

Supplier's Site Datasheet
Singapore, Singapore
N-Channel 100V 1.6A MOSFET Transistor
278-IXTY1R6N100D2
N-Channel 100V 1.6A MOSFET Transistor 278-IXTY1R6N100D2
N-Channel MOSFET, 100V, 1.6A, TO-247 Product overview: IXTY1R6N100D2 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100V, 1.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 1.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTY1R6N100D2 can be used for catalog matching and distributor lookup.

N-Channel MOSFET, 100V, 1.6A, TO-247 Product overview: IXTY1R6N100D2 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100V, 1.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 1.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTY1R6N100D2 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTY1R6N100D2 278-IXTY1R6N100D2
Product Name 100V - 1700V N-Channel Depletion Mode Power MOSFETs N-Channel 100V 1.6A MOSFET Transistor
Polarity N-Channel
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