Littelfuse, Inc. 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXXX200N60B3

Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
Datasheet
Datasheet Summary
Powered by GS/AI

The IXXX200N60B3 is a 600V IGBT designed for 10-30kHz switching applications in power inverters, motor drives, UPS, PFC circuits, and welding machines. It is packaged in a PLUS247 case with dimensions of 20.80 to 21.34 mm in length, 15.75 to 16.13 mm in width, and 4.83 to 5.21 mm in height. The device has a continuous collector current rating of 200A at 110°C and a maximum collector-emitter voltage of 600V. The collector-emitter saturation voltage is 1.70V at 25°C and 1.58V at 150°C with 100A collector current and 15V gate-emitter voltage. Thermal resistance from junction to case is 0.092°C/W. The device is avalanche rated, has a square reverse-bias safe operating area, and supports short-circuit operation for up to 10μs. It meets RoHS standards and is certified for operation from -55°C to 175°C junction temperature.

Datasheet Summary
Powered by GS/AI

The IXXX200N60B3 is a 600V IGBT designed for 10-30kHz switching applications in power inverters, motor drives, UPS, PFC circuits, and welding machines. It is packaged in a PLUS247 case with dimensions of 20.80 to 21.34 mm in length, 15.75 to 16.13 mm in width, and 4.83 to 5.21 mm in height. The device has a continuous collector current rating of 200A at 110°C and a maximum collector-emitter voltage of 600V. The collector-emitter saturation voltage is 1.70V at 25°C and 1.58V at 150°C with 100A collector current and 15V gate-emitter voltage. Thermal resistance from junction to case is 0.092°C/W. The device is avalanche rated, has a square reverse-bias safe operating area, and supports short-circuit operation for up to 10μs. It meets RoHS standards and is certified for operation from -55°C to 175°C junction temperature.

Suppliers

Company
Product
Description
Supplier Links
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs - IXXX200N60B3 - Littelfuse, Inc.
Rosemont, IL, United States
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
IXXX200N60B3
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXXX200N60B3
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IXXX200N60B3
Product Name 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
VCES 600 volts
Unlock Full Specs
to access all available technical data