Littelfuse, Inc. 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXYH50N120C3D1

Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
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Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
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Datasheet
Datasheet Summary
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The IXYH50N120C3D1 is a 1200V XPT IGBT with an integrated ultra-fast anti-parallel diode, packaged in a TO-247 AD case. It is rated for a continuous collector current of 50A at 100°C, with a VCE(sat) of 3.5V at 50A and 15V gate-emitter voltage, increasing to 4.2V at 150°C junction temperature. The device features a square RBSOA, a positive thermal coefficient of VCE(sat), and a maximum junction temperature of 150°C. Thermal resistance from junction to case is 0.20°C/W for the IGBT and 0.90°C/W for the diode. Switching losses are optimized for 20-50 kHz applications, with turn-off delay time of 133 ns and fall time of 43 ns at 50A, 15V, 25°C. The part conforms to international standard packaging and is rated for operation from -55°C to 150°C. Mounting torque is specified at 1.13 Nm (10 lb.in.).

Datasheet Summary
Powered by GS/AI

The IXYH50N120C3D1 is a 1200V XPT IGBT with an integrated ultra-fast anti-parallel diode, packaged in a TO-247 AD case. It is rated for a continuous collector current of 50A at 100°C, with a VCE(sat) of 3.5V at 50A and 15V gate-emitter voltage, increasing to 4.2V at 150°C junction temperature. The device features a square RBSOA, a positive thermal coefficient of VCE(sat), and a maximum junction temperature of 150°C. Thermal resistance from junction to case is 0.20°C/W for the IGBT and 0.90°C/W for the diode. Switching losses are optimized for 20-50 kHz applications, with turn-off delay time of 133 ns and fall time of 43 ns at 50A, 15V, 25°C. The part conforms to international standard packaging and is rated for operation from -55°C to 150°C. Mounting torque is specified at 1.13 Nm (10 lb.in.).

Suppliers

Company
Product
Description
Supplier Links
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs - IXYH50N120C3D1 - Littelfuse, Inc.
Rosemont, IL, United States
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
IXYH50N120C3D1
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXYH50N120C3D1
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Supplier's Site Datasheet
Singapore, Singapore
IGBT Transistor
279-IXYH50N120C3D1
IGBT Transistor 279-IXYH50N120C3D1
Insulated Gate Bipolar Transistor, Product overview: IXYH50N120C3D1 from Littelfuse is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IXYH50N120C3D1 can be used for catalog matching and distributor lookup.

Insulated Gate Bipolar Transistor, Product overview: IXYH50N120C3D1 from Littelfuse is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IXYH50N120C3D1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number IXYH50N120C3D1 279-IXYH50N120C3D1
Product Name 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IGBT Transistor
VCES 1200 volts
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